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    2N10 Search Results

    2N10 Result Highlights (4)

    Part ECAD Model Manufacturer Description Download Buy
    RJMG1V812N101ER
    Amphenol Communications Solutions RJMG, Input output Connectors, 1x1,1G V/T with LEDs PDF
    LQB18NNR22N10B
    Murata Manufacturing Co Ltd General Purpose Inductor, 0.22uH, 30%, 1 Element, Ferrite-Core, Reflow soldering,, 1608/0603 PDF
    LQB18NNR22N10D
    Murata Manufacturing Co Ltd General Purpose Inductor, 0.22uH, 30%, 1 Element, Ferrite-Core, Reflow soldering,, 1608/0603 PDF
    XRCGB32M768F2N10R0
    Murata Manufacturing Co Ltd Parallel - Fundamental Quartz Crystal, 32.768MHz Nom PDF

    2N10 Datasheets (500)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2N-10
    Inmet ATTENUATOR Scan PDF 317.43KB 1
    2N10
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 37.63KB 1
    2N100
    Motorola Motorola Semiconductor Datasheet Library Scan PDF 55.73KB 1
    2N100
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 83.44KB 1
    2N100
    Unknown Discontinued Transistor Data Book 1975 Scan PDF 173.92KB 2
    2N100
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 89.52KB 1
    2N100
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 37.63KB 1
    2N100
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 80.42KB 1
    2N100
    Unknown GE Transistor Specifications Scan PDF 38.16KB 1
    2N100
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 136.16KB 1
    2N1000
    Motorola Motorola Semiconductor Datasheet Library Scan PDF 81.34KB 1
    2N1000
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 88.94KB 1
    2N1000
    Unknown Vintage Transistor Datasheets Scan PDF 50.91KB 1
    2N1000
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 93.23KB 1
    2N1000
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 37.63KB 1
    2N1000
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 85.84KB 1
    2N1000
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 164.55KB 1
    2N1000
    Unknown GE Transistor Specifications Scan PDF 36.64KB 1
    2N1000
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 151.88KB 1
    2N1003
    Motorola Motorola Semiconductor Datasheet Library Scan PDF 81.34KB 1
    ...
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    2N10 Price and Stock

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    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Verical 2N1054 347 189
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    • 10000 $1.68
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    Rochester Electronics 2N1054 347 1
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    • 100 $1.59
    • 1000 $1.42
    • 10000 $1.34
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    TDK Corporation MLZ2012N100LTD25

    - Tape and Reel (Alt: MLZ2012N100LTD25)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas MLZ2012N100LTD25 Tape & Reel 30,000 15 Weeks 2,000
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    Avnet Abacus MLZ2012N100LTD25 14,000 19 Weeks 2,000
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    TDK Corporation B65812N1012D1

    B65812 Coil Former With GFR Thermosetting Plastic 12-Pin - Bulk (Alt: B65812N1012D001)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas B65812N1012D1 Bulk 12,800 29 Weeks 200
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    • 1000 $0.97
    • 10000 $0.67
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    Qnity Laird TYS50202R2N-10

    - Tape and Reel (Alt: TYS50202R2N-10)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas TYS50202R2N-10 Tape & Reel 12,500 13 Weeks, 3 Days 2,500
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    Infineon Technologies AG BGSA149M2N10E6327XTSA1

    - Tape and Reel (Alt: BGSA149M2N10E6327XTSA1)
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Avnet Americas BGSA149M2N10E6327XTSA1 Tape & Reel 12,000 16 Weeks 12,000
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    2N10 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N1015

    Abstract: 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B
    Contextual Info: POWER TRANSISTORS *•* PT TYPE NO. TO-82 m MAXIMUM RATINGS 25*C BVcbo BVctt» BVebo le V V V A Watts hft MIN MÀX le A * Va V _ Sat Test Voltages Conditions le fa I ebo Va V« V A ma V A 2N1015 150 30 30 25 7.5 10 2 4 1.5 2 2 .3 20 2N1015A 150 60 60 25 7.5


    OCR Scan
    2n10152n1015a2n1015b2n1015c+62n1015d2n1015e2n1015f2n10162n1016a2n1016b PDF

    Contextual Info: $ E - tfn ? n z lì£ ]J A rm s [jg p ^ ^ ,( Q ]V rm s A C 'J L '— m D 2N101LF D 2N 101LG D 2N 201LF D 2N 201LG « (C R * * v < r t * D 2N201LF18 D 2 N 2 0 1 LG 1 8 « fè N O . (BittPJO) U L : E69031 CSA : LR48894 T'U V : R75168/R85137 I i : ( i i i )


    OCR Scan
    2n101lf101lg201lf201lg+62n201lf18e69031lr48894r75168/r85137d2n20ilfi8d2n20ilgi8 PDF

    2N1378

    Abstract: 2N1924 2N2374 2N1373 2N526 2N508A 2N525 2N1274 2N1305 2N2001
    Contextual Info: GERMANIUM PNPSMALL SIGNAL TRANSISTORS Type ycBo V Max YFWO V Max Vc, V Max Vc, V 2N465 2N466 2N467 2N508 2N508A 2N522 2N524 2N525 2N526 2N527 2N580 2N581 2N650 2N651 2N652 2N653 2N654 2N655 2N658 2N659 2N660 2N661 2N662 2N1057 2N1097 2N1098 2N1144 2N1145


    OCR Scan
    2n4652n4662n4672n508+132n508a2n5222n5242n5252n5262n5272n13782n19242n23742n13732n12742n13052n2001 PDF

    2N2560

    Abstract: MT27 2N2553 2N1041 MT28 2N1043 2n1040 2N1042
    Contextual Info: ermanium power transistors 142 PNP ALLOY TRANSISTORS 1 Amp BREAKDOWN VOLTAGES CUTOFF CURRENT hFE' TYPE NUMBER CASE SIZE VCB VCE VEB VCE Ic (A) Min. Max. 2N1038 2N1039 2N1040 2N1041 2N2552 2N2553 2N2554 2N2555 2N2556 2N2557 2N2558 2N2559 TO-5 TO-5 TO-5 TO-5


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    2n10382n10392n10402n1041+112n25522n25532n25542n25552n25562n25572n2560mt27mt282n10432n1042 PDF

    2N1011

    Abstract: 2N1159 2N251a 2N1136 2N1537 N1137 Germanium power
    Contextual Info: germanium power transistors 147 See Pg. 147 for outline drawing PNP ALLOY TRANSISTORS 3.0 Amp BREAKDOWN VOLTAGES CUTOFF CURRENT hFE TYPE NUMBER V eB VeE VEB VeE Ie (A) Min. Max. V eB rnA 2N250A 2N251A 2N637 2N637A 2N637B 2N638 2N638A 2N638B 2N1011 2N1136


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    2n250a2n251a2n6372n637a+102n637b2n6382n638a2n638b2n10112n11362n11592n1537n1137germanium power PDF

    2N1069

    Abstract: 2N3233 2N3235 2N3236 2N3238 2N3239 2N1070 2N230 2N3232 2N3240
    Contextual Info: POWER TRANSISTORS 'n , -•i ‘ 7 TYPE NO. f’T I t • 2N1069 50 w ., : •• r, , Sat ■ ■-c J . . j v » > V '‘ .-.so« , . v :i! \ Test Corrliîions In A A ll! 10 50 1.5 4 3 4.5 1.5 .3 .100 10 50 1.5 4 1 4.5 1.5 .3 .100 6 15 45 1.5 4 3


    OCR Scan
    2n10692n10702n14872n1488+122n14892n14902n17022n23052n32322n32332n32352n32362n32382n32392n2302n3240 PDF

    2N1016

    Abstract: 2N2772 2N2771 2N1015 2N1016D 2N2227 TO82 2N2228 2N1016B 2N3430
    Contextual Info: • 4 ñ b c1 E m 3 D D G D 4 3 ‘ì DbD discrete devices JEmitronicr hot line TOLL FREE NUMBER 800-777-3960 silicon transistors silicon power transistors HIGH S.O.A. NPN POWER TRANSISTORS 6 - 2 0 Amperes JEDEC/TYPE 151 153 152 154 2N1015, A, B, C, D 2N1016,


    OCR Scan
    ddgd43t2n10152n10162n3429-32+122n1015a2n1016a2n3429152-to-822n27722n27712n1016d2n2227to822n22282n1016b2n3430 PDF

    2N1038

    Abstract: 2n2553 2N1040 2N1041 2n1039 2N2552 2N2557 ti 2N2553 2N2556 2N1036
    Contextual Info: TYPES 2N1038, 2N1039, 2N1040, 2N1041 • 2N2552, 2N2553, 2N2554, 2N2555 • 2N2556, 2N2557, 2N2558, 2N2559 P-N-P ALLOY-JUNCTION GERMANIUM MEDIUM-POWER TRANSISTORS M3 I 5s :0B Zssp Guaranteed 4 0 -, 60 -. 8 0 -, or lOO-VOLT UNITS 20 WATTS AT 259C CASE TEMPERATURE


    OCR Scan
    2n10382n10392n10402n1041+82n25522n25532n25542n25552n25562n2557ti 2n25532n1036 PDF

    2N1047

    Abstract: SOLID POWER CORP 2n1768 2N104 2N176 2N1050A 2n1769 2N1047B 2N1048 2N1048B
    Contextual Info: 8 3 6 5 7 0 0 S O L I D PO WE R C O R P 95C 0 0 1 1 6 SOLID POWER CORP T5 D "T"^3 Û f DE | fl3bS7DD DDDDllb 2 P O W E R T R A N S IS T O R S PT 2N1047 TO-57 40 aS hFE MAXIM UM RATINGS @ Ic 25°C BVcbo BV ceo BV ebo V V V A Watts TYPE NO. Ic A MIN MAX V CE


    OCR Scan
    2n10472n10482n10492n1050+122n1047a2n1048af2n1049at2n1050a2n1047b2n1048bsolid power corp2n17682n1042n1762n1050a2n1769 PDF

    6ae diode

    Abstract: 2NS773 2SC971 b0173 KT807AM KT934A KT934 MRF8003 kt807 MSP100
    Contextual Info: POWER SILICON NPN Item Number Part Number I C S 10 20 2N10S0 2N1613A 2NS914 PT8890 PT8871 PT8871A MRF402 MRF402 ~~~~~~ 2S 30 2NS687 2NS688 2N2234 2N2234 2N2234 2NS710 2N6206 2N6206 ~~~~g~ 35 40 2N1092 MRF8003 2SC971 2N6202 2N6202 2N6202 2NS773 TIP61 ~g~~~~:~


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    trs701sssrs7014srs7s04srss014+14msp1002ns9222n44292n44282n10476ae diode2ns7732sc971b0173kt807amkt934akt934mrf8003kt807 PDF

    PA6015A

    Abstract: 2n2570 KT3101A-2 BF250 SG119 2N1269 2SC1071 2S078 LOW-POWER SILICON NPN PA6015
    Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 2Nl199A 2N770 2N770 2N3511 2N918 2N1268 2N1271 2N1139 2N728 FMMT2369 2N2~t U 15 20 2N1006 2Nl199 PN5131 PN5131 PN5131 2N476 2N1417 2N1663 2N5131 ~~~~~ 25 30 2N771 MPS5131 MPS5131 AST5220 2N5220 BF250 04024 A5T5219


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    2nl199a2n7702n35112n918+152n12682n12712n11392n728fmmt2369pa6015a2n2570kt3101a-2bf250sg1192n12692sc10712s078low-power silicon npnpa6015 PDF

    2N1212

    Abstract: 2N2101 2N1208 to-53 transistor 2n1208 2N1209 2N1616 2N1616A 2N1617 2N1617A
    Contextual Info: POWER TRANSISTORS Sat Test Voltages Conditions « ! » a r a i * 7 7 * hTM msm mrm l i r a y v V A A A ma FT TYPE NO. 2N1047 TO-57 , MAXIMUM RATINGS <feCm* • i-i’n o i A w & ? V •• y " V 80 6 40 80 .5 h* . mW 12 36 .5 10 7.5 6.0 .5 .250 2N1048 40 120


    OCR Scan
    2n12082n12092n12122n1616+82n1616a2n16172n1617a2n16182n17242n2101to-53transistor 2n1208 PDF

    Contextual Info: 2N1016B, 2N1016C, 2N1016D Qualified Levels: JAN NPN Silicon High-Power Transistor Available on commercial versions Qualified per MIL-PRF-19500/102 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage. Important: For the latest information, visit our website http://www.microsemi.com.


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    2n1016b2n1016c2n1016dmil-prf-19500/102+22n1016high-reliabilit32 PDF

    2n1016

    Abstract: 2n2739
    Contextual Info: POW ER TRANSISTORS PT TYPE NO. MAXIMUM RATINGS le B V cbo B V ceo B V ebo V A V V Watts < 25°C hFE MIN MAX ì> V CE le V A Test Sat Voltages Conditions Ib le V CE V be A A V V Iebo ma 2N1015 150 30 30 25 7.5 10 2 4 1.5 2 2 .3 20 2N1015A 150 60 60 25 7.5


    OCR Scan
    2n10152n1015a2n1015b2n1015c+72n1015d2n1015e2n1015f2n10162n1016a2n1016b2n2739 PDF

    Contextual Info: 2N1058 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)20ã V(BR)CBO (V) I(C) Max. (A)50m Absolute Max. Power Diss. (W)50m Maximum Operating Temp (øC)75õ I(CBO) Max. (A)50u» @V(CBO) (V) (Test Condition)18 h(FE) Min. Current gain. h(FE) Max. Current gain.


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    2n1058 PDF

    Contextual Info: 2N102 Transistors Ge NPN Power BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)25 I(C) Max. (A)1.5 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)70’ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    2n102code3-12 PDF

    Contextual Info: 2N107 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V) V(BR)CBO (V)12 I(C) Max. (A)10m Absolute Max. Power Diss. (W)50m Maximum Operating Temp (øC)60õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)5.0 h(FE) Min. Current gain. h(FE) Max. Current gain.


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    2n107 PDF

    Contextual Info: 2N1048C Transistors Si NPN Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)120 I(C) Max. (A)1.0 Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V)1.0 @I(C) (A) (Test Condition)500m


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    2n1048cfreq12m PDF

    Contextual Info: 2N1008A Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)40 V(BR)CBO (V)40 I(C) Max. (A)300m Absolute Max. Power Diss. (W)400m# Maximum Operating Temp (øC)85þ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)25 h(FE) Min. Current gain. h(FE) Max. Current gain.


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    2n1008a PDF

    Contextual Info: 2N1098 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)16 V(BR)CBO (V) I(C) Max. (A)100m Absolute Max. Power Diss. (W)140m Maximum Operating Temp (øC)100õ I(CBO) Max. (A)16u @V(CBO) (V) (Test Condition) h(FE) Min. Current gain.25 h(FE) Max. Current gain.


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    2n1098 PDF

    2N1000

    Contextual Info: 2N1000 Transistors Ge NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)25 V(BR)CBO (V)40 I(C) Max. (A) Absolute Max. Power Diss. (W)150m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)15u @V(CBO) (V) (Test Condition)40 h(FE) Min. Current gain.40 h(FE) Max. Current gain.


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    2n1000 PDF

    Contextual Info: 2N1037 Transistors Si PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)35 V(BR)CBO (V)50 I(C) Max. (A)50m Absolute Max. Power Diss. (W)250m Maximum Operating Temp (øC)160þ I(CBO) Max. (A)1.0u @V(CBO) (V) (Test Condition)30 V(CE)sat Max. (V).50 @I(C) (A) (Test Condition)8.0m


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    2n1037freq150k PDF

    Contextual Info: 2N1082 Transistors Si NPN Lo-Pwr BJT Military/High-RelN V BR CEO (V)25â V(BR)CBO (V)25 I(C) Max. (A)50m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)200þ I(CBO) Max. (A)500n @V(CBO) (V) (Test Condition)25 V(CE)sat Max. (V) @I(C) (A) (Test Condition)


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    2n1082 PDF

    Contextual Info: 2N1097 Transistors Ge PNP Lo-Pwr BJT Military/High-RelN V BR CEO (V)18ã V(BR)CBO (V)18 I(C) Max. (A)200m Absolute Max. Power Diss. (W)200m Maximum Operating Temp (øC)100þ I(CBO) Max. (A)16u @V(CBO) (V) (Test Condition)16 h(FE) Min. Current gain.34 h(FE) Max. Current gain.90


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    2n1097 PDF