2N638 Search Results

transistor A05

Abstract: 2N6388 npn darlington 2N6386 2N6387 2N6666 2N6667 2N6668 Complementary Darlington Audio Power Amplifier 079V
Contextual Info: ÏÏÏ 38 75081 dF | 3 fl? S D Û l Q Q l7E 4fl 7 G E S OL ID S T A T E Darlington Power Transistor» 01E 17248 D T - 3 3 - Z 1 _ ._ 2N6386, 2N6387, 2N6388 File Number 10-Ampere N-P-N Darlington

2N3683

Abstract: 2N6385 shockley diode 2N6383 2N6384
Contextual Info: 2N6383 2N6384 2N6385 NPN SILICON POWER DARLINGTON TRANSISTOR Central TM Semiconductor Corp. DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N3683 SERIES types are NPN Silicon Power Darlington Transistors designed for power amplifier applications. MARKING: FULL PART NUMBER

2N6387

Abstract: 1N5825 2N6388 MSD6100
Contextual Info: MOTOROLA Order this document by 2N6387/D SEMICONDUCTOR TECHNICAL DATA 2N6387 2N6388* Plastic Medium-Power Silicon Transistors *Motorola Preferred Device . . . designed for general–purpose amplifier and low–speed switching applications. DARLINGTON 8 AND 10 AMPERE

40872

Abstract: 40594 40636 300W TRANSISTOR AUDIO AMPLIFIER 2N2102 2N4036 2N5492 2N5495 2N6103 2N6111
Contextual Info: POWER TRANSISTOR TYPES FOR AUD IO -FREQ U ENC Y Power Output 16Q 6 .5 16 4n 18 45 Output Transistors 8Ì2 Imped. Circuit P -N -P 40980 (2N 6111) True Comp. 40816 (2N 5495) (2N 6269) 40817 (2N 6111) - Comp. Darlington BDX 33 2N6386 BDX 34 TA8201 - True Comp.

2N1011

Abstract: 2N1159 2N251a 2N1136 2N1537 N1137 Germanium power
Contextual Info: germanium power transistors 147 See Pg. 147 for outline drawing PNP ALLOY TRANSISTORS 3.0 Amp BREAKDOWN VOLTAGES CUTOFF CURRENT hFE TYPE NUMBER V eB VeE VEB VeE Ie (A) Min. Max. V eB rnA 2N250A 2N251A 2N637 2N637A 2N637B 2N638 2N638A 2N638B 2N1011 2N1136

40632

Abstract: 300W TRANSISTOR AUDIO AMPLIFIER npn 40872 40636 40872 transistor TA8326 120w audio power amplifier 2n3055 audio output circuit 2N5415 2N6320
Contextual Info: POWER TRANSISTOR TYPES FOR AUDIO-FREQUENCY LINEAR AMPLIFIERS 16Q 6 .5 16 Power Output 4n 8Ì2 Imped. 18 45 Output Transistors Circuit P-N-P 40979 (2N6292) 40980 (2N6111) - True Comp. 40816 (2N5495) (2N6269) 40817 (2N6111) - Comp. Darlington BDX 33 2N6386

Contextual Info: 2N6388 SILICON NPN POWER DARLINGTON TRANSISTOR • STMicroelectronics PREFERRED SALESTYPE . NPN DARLINGTON . HIGH CURRENT CAPABILITY . INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The device is a silicon epitaxial-base NPN power transistor in monolithic Darlington configuration

Contextual Info: • o o 2 t i 3 EH ü ■ SCS-THOMSON IW fô m i « ! S G S - THOMSON ^ T - 3 3 * z ° i 2N6386 2N6387/2N6388 30E ]> POWER DARLINGTON TRANSISTORS D E S C R IP T IO N The 2N6386, 2N6387 and 2N6388 are silicon epi­ taxial-base NPN transistors in monolithic Darling­

Contextual Info: MCC
  omponents 21201 Itasca Street Chatsworth    !"# $ %    !"# 2N6388 Features • NPN Darlington Power Transistor This device is designed for general purpose amplifier and low-speed switching applications.

N6337

Abstract: n633 MOTOROLA 6-38-7
Contextual Info: MOTOROLA Order this document SEMICONDUCTOR TECHNICAL DATA 2N6387/D 2N6387 2N 6388* Plastic Medium-Power Silicon Transistors ’ M otorola Preferred Device . . . designed for general-purpose amplifier and low -speed switching applications. • • • •

2N6387

Abstract: 2N6387-D 1N5825 2N6388 MSD6100
Contextual Info: ON Semiconductor 2N6387 2N6388* Plastic Medium-Power Silicon Transistors *ON Semiconductor Preferred Device . . . designed for general–purpose amplifier and low–speed switching applications. DARLINGTON 8 AND 10 AMPERE NPN SILICON POWER TRANSISTORS 60–80 VOLTS

2n6385

Contextual Info: 2N6385 10 A N-P-N Darlington Power Transistor. 80 V. 100 W. Gain Of 1000 At 5 A. 3. Page 1 of 2 Enter Your Part # Home Part Number: 2N6385 Online Store 2N6385 Diodes 10 A N -P-N Darlington Power Transistor. 80 V. 100 W. Transistors Gain Of 1000 At 5 A. Integrated Circuits

Contextual Info: 2N6385SMD05 MECHANICAL DATA Dimensions in mm inches SILICON POWER NPN DARLINGTON TRANSISTOR 7.54 (0.296) 0.76 (0.030) min. 2.41 (0.095) 3.175 (0.125) Max. 2.41 (0.095) 3.05 (0.120) 3 10.16 (0.400) 5.72 (.225) 0.76 (0.030) min. 1 FEATURES • High Gain Darlington Performance

2n6386

Contextual Info: ÏÏÏ 38 75 081 dF | 3fl? S D Û l QQl 7E4f l G E SO L I D S T A T E Darlington Power Transistor» 01E 17248 D T - 3 3 - Z 1 _ ._ 2N6386, 2N6387, 2N6388 File Number 10-Ampere N-P-N Darlington

Contextual Info: 2N6387, 2N6388 Plastic Medium-Power Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features http://onsemi.com • High DC Current Gain − hFE = 2500 Typ @ IC = 4.0 Adc • Collector−Emitter Sustaining Voltage − @ 100 mAdc

f327

Abstract: TA8349 TA8348 2N6384 2N6385 shockley diode 2N6383 2N6383 RCA 2N6385 RCA GA-14
Contextual Info: 3875081 G E SOLID STATE 01 3Ö7S0Ö1 0G17243 Û Darlington Power Transistors File Number 609 2N6383, 2N6384, 2N6385 10-Ampere N-P-N Darlington Power Transistors 40-60-80 Volts, 100 Watts Gain of 1000 at 5 A TERMINAL DESIGNATIONS c {FLANGE I Features: • Operates fro m 1C w ith o u t p redriver

Contextual Info: File Num ber 610 2N6386, 2N6387, 2N6388 10-Ampere N-P-N Darlington Power Transistors TERMINAL DESIGNATIONS 40-60-80 Volts, 65 Watts Gain of 1000 at 5 A 2N6387, 2N6388 Gain of 1000 at 3 A (2N6386) I! o Features: t • Operates from 1C without predriver :

2N6387

Abstract: 2N6388 1N5825 2N6387G 2N6388G MSD6100
Contextual Info: 2N6387, 2N6388 2N6388 is a Preferred Device Plastic Medium−Power Silicon Transistors These devices are designed for general−purpose amplifier and low−speed switching applications. Features http://onsemi.com • High DC Current Gain − hFE = 2500 Typ @ IC = 4.0 Adc

2N6385

Abstract: 2N6383 shockley diode 2N6384
Contextual Info: Inchange Semiconductor Product Specification 2N6383 2N6384 2N6385 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6648/6649/6650 ・DARLINGTON ・High DC current gain APPLICATIONS ・Designed for low and medium frequency

mj2955 TO-220

Abstract: 2N3055 TO-220 MJ2955 BDX54S BDX18 2N3055 TO-3 4116-4 bdw21 BDX88b crimson 5110
Contextual Info: CRIMSON SEM IC ONDUC TO R INC d F | asm C H b 2514096 CRIMSON SEMICONDUCTOR 99D 00 33 4 INC D 7 EPITAXIAL BASE - TO -220 continued I ' j " NPN PNP TIP121 TIP122 TIP130 TIP131 TIP132 2N6121 2N6122 2N6123 2N6288 2N6290 2N6292 2N6386 2N6387 2N6388 2N6486 2N6487

2N6385

Contextual Info: 2N6385 SILICON NPN-DARLINGTON POWER TRANSISTOR DESCRIPTION: The ASI 2N6385 is Designed for General Purpose Amplifier and Switching Applications. PACKAGE STYLE TO- 3 MAXIMUM RATINGS Ie 15 A Vce 8O V p d is s 1OO W @ Te " 25 0C Tj -65 0C to +2OO 0C Tst g -65 0C to +2OO 0C

Contextual Info: MCC
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# TM Micro Commercial Components 2N6388 Features • NPN Darlington Power Transistor This device is designed for general purpose amplifier and low-speed

2N6388 AT MICROELECTRONICS

Abstract: 2N6387 2N6388 NPN POWER DARLINGTON TRANSISTORS
Contextual Info: 2N6387 2N6388 SILICO NPN POWER DARLINGTON TRANSISTORS • ■ ■ ■ 2N6388 IS SGS-THOMSON PREFERRED SALESTYPE NPN DARLINGTON HIGH CURRENT CAPABILITY INTEGRATED ANTIPARALLEL COLLECTOR-EMITTER DIODE DESCRIPTION The 2N6387 and 2N6388 are silicon epitaxial-base NPN power transistor in monolithic

2N6388

Abstract: 2N6387
Contextual Info: ON Semiconductor 2N6387 2N6388* Plastic Medium−Power Silicon Transistors *ON Semiconductor Preferred Device . . . designed for general−purpose amplifier and low−speed switching applications. DARLINGTON 8 AND 10 AMPERE NPN SILICON POWER TRANSISTORS