2N1016D Search Results

Contextual Info: 2N1016B, 2N1016C, 2N1016D Qualified Levels: JAN NPN Silicon High-Power Transistor Available on commercial versions Qualified per MIL-PRF-19500/102 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage. Important: For the latest information, visit our website http://www.microsemi.com.

transistor kc 2026

Abstract: 2N10160 2N1016C 2N1016B 2N1016D 2n1019
Contextual Info: MIL-S-19500/102A 29 December 1966 ' SUPERSEDING M L -S -19500/102 ÌNAVYÌ 19 July 19 62 See 6.2 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE. TRANSISTORS. NPN. SILICON. HIGH-POWER TYPES 2N1016B, 2N1016C, AND 2N1016D im a specm caaon is mandatory lor use py au L>eparimenta and Agencies of the Deôartment of Defense,

2N1016B

Abstract: 2N1016D 2N1016C transistor kc 2026 102A MC 3041 2N1016 kc 2026
Contextual Info: MIL SP E C S IC|ODDOiaS OODObTl 4 |~ M IL-S-19500/102A 29 December 1966 ' SUPERSEDING M IL -S-19500/102 NAVY 19 July 1962 (See 6 .2) MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTORS, NPN, SILICON, HIGH-POWER TYPES 2N1016B, 2N1016C, AND 2N1016D This specification is mandatory for u se by a ll Depart­

393A

Abstract: 2N3768 2N1716 207C 2N1722 180D 2N3868
Contextual Info: 2N TYPE 2N389 2N424 2N1016B 2N1016C 2N1016D 2N1047A 2N1048A 2N1049A 2N1050A 2N1479 2N1480 2N1481 2N1482 2N1483 2N1484 2N1485 2N1486 2N1487 2N1488 2N1489 2N1490 2N1714 2N1715 2N1716 2N1717 2N1722 2N1724 2N2015 2N2016 2N3418 2N3419 2N3420 2N3421 2N3439 2N3440

2n1016

Abstract: 2n1016c
Contextual Info: 2N1016B, 2N1016C, 2N1016D Qualified Levels: JAN NPN Silicon High-Power Transistor Available on commercial versions Qualified per MIL-PRF-19500/102 DESCRIPTION This family of high-frequency, epitaxial planar transistors feature low saturation voltage. Important: For the latest information, visit our website http://www.microsemi.com.

2N1015

Abstract: 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B
Contextual Info: POWER TRANSISTORS *•* PT TYPE NO. TO-82 m MAXIMUM RATINGS 25*C BVcbo BVctt» BVebo le V V V A Watts hft MIN MÀX le A * Va V _ Sat Test Voltages Conditions le fa I ebo Va V« V A ma V A 2N1015 150 30 30 25 7.5 10 2 4 1.5 2 2 .3 20 2N1015A 150 60 60 25 7.5

2N1016

Abstract: 2N2772 2N2771 2N1015 2N1016D 2N2227 TO82 2N2228 2N1016B 2N3430
Contextual Info: • 4 ñ b c1 E m 3 D D G D 4 3 ‘ì DbD discrete devices JEmitronicr hot line TOLL FREE NUMBER 800-777-3960 silicon transistors silicon power transistors HIGH S.O.A. NPN POWER TRANSISTORS 6 - 2 0 Amperes JEDEC/TYPE 151 153 152 154 2N1015, A, B, C, D 2N1016,

2N1384

Abstract: 2N993 2N1516 2N1151 2N1378 2N1034 2N1036 2N1150 2N1037 2N1046
Contextual Info: D Ì G I T R O N E L E C T R O N I C CO RP 3bE D WM T W Ë DGE -p.'J 7 2flMHt.07 O G O O O D B Page MQITKON ELECTRONIC” CORP 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 Fax JDHN J. S C H W A R T Z ENGINEERING DIGITRON ELECTRONICS, CORP

2n1016

Abstract: 2n2739
Contextual Info: POW ER TRANSISTORS PT TYPE NO. MAXIMUM RATINGS le B V cbo B V ceo B V ebo V A V V Watts < 25°C hFE MIN MAX ì> V CE le V A Test Sat Voltages Conditions Ib le V CE V be A A V V Iebo ma 2N1015 150 30 30 25 7.5 10 2 4 1.5 2 2 .3 20 2N1015A 150 60 60 25 7.5

2N1016

Abstract: 2N1015C STA3265 2N2229 2N1015 2N1015A 2N1015B 2N1015D 2N1015E STA9760
Contextual Info: Silicon power transistors NPN TO-61 isolated collector (contad) lc | M A X ) Il FE IC/VCE VcEO(SUS| (Min-Max Tvp e# (Volts) @ A/V) STA9760 10-200 10/4 225 STA9761 300 10-200@ 8/4 10-200@5/4 STA 9762 350 VCE|S*T| @ Ic/Ib (V <a A/A) 2@ 10/1 2 @ 8 /.8

2n1016

Contextual Info: , Line. <~>E.ml-L-ona.u.cko'i u-^i 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. TELEPHONE: 973 376-2922 (212)227-6005 FAX: (973) 376-8960 NPN POWER TRANSISTROS 2N1015/2N1016 Inches . Mm. iymbo A 08 d 0D 0D, <t>0, e e, H Min. Max. .560 .060 .170 12.70

2n189

Abstract: 2N1136b 2N420 B1151 EQUIVALENT 2SA114 OC59 2T312 2T203 SFT125 2N1152
Contextual Info: INTERNATIONAL TRANSISTOR SUBSTITUTION GUIDEBOOK by KEATS A. PULLEN. Jr., Eng. D. Member of the Scientific Staff, Ballistic Research Laboratories, Aberdeen Proving G rounds Adjunct Professor of Electrical Engineering, Drexel Institute of Technology Author of: Conductance Design of Active Circuits

2N2772

Abstract: TO82 2N2232 2N3475 2n2227 2n3471 2n2228 2n1016 2N2226 2N1050C
Contextual Info: discrete devices JEmitronicr hot line TO LL FREE NUMBER 800-777-3960 silicon transistors silicon power transistors HIGH S.O.A. NPN POWER TRANSISTORS 6 - 2 0 Amperes JE D E C /T Y P E 151 153 152 154 2N1015, A, B, C, D 2N1016, A, B, C, D 2N3429-32 163 164 PEAK CURRENT

2N1015

Abstract: 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N2753
Contextual Info: 8365700 SOLID POWER CORP SOLID 95C 0 0 1 2 0 POWER CORP TS D ö3hS70G -p-3 3 ^0/ 000D12D POW ER TRANSISTORS PT TYPE NO. W atts TO-82 hFE M A X IM U M R A TIN G S @ Ic 25°C B V cbo B V ceo B V ebo V V , V A @ M IN M AX Ic A V CE V Sat Voltages VCE V be V V

2N2227

Abstract: 2N2228 2N2772 2N1016 152-06 2N3431 154-04 TO82 2N3430 2N2229
Contextual Info: A Hi-Reliability Semiconductor Manufacturer Home Distributors Employment Information Military Product Products Quality Quote Request Value Added E-mail home | help | email Alloy Transistors HIGH S.O.A. NPN POWER TRANSISTORS 6-20 AMPERES 2N1015, 2N1016, 2N3429-32

RCA H 541

Abstract: 2T312 2N2654 AS218 transistor gex 74a diode germanium 1n283 K3004 TFK diode ac132 TI-483
Contextual Info: $ 1.50 Cat. No. SSH-6 /U*A TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York SIXTH EDITION FIRST PRINTING — FEBRUARY, 1965 TRANSISTOR SUBSTITUTION HANDBOOK

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

2N3920

Abstract: 2N648 2N2004 2N2995 2N2202 2N2860 TO11 2N2228 2N29SA 2n4307
Contextual Info: £ ^ I jemitronicr hot line discrete devices TOLL FREE NUMBER 800-777-3960 silicon transistors cont-d silicon small signal transistors choppers Type Polarity Power Dissipation @ 25°C mw tlFE @ lc Tj (°C) BVcbo (volts) HILL (volts) Vet (SAT @ lc (Min.)

transistor c2060

Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

TO82 TRANSISTOR

Abstract: TO82 2N2227
Contextual Info: ^ ^ ^ 2 5 4022 CIL ICON T R A N S I S T O R C O RP öö NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS „ . 6 Ô D 00791 7"j 3 3 V / 3 " DE | ù 25MQSa 00007=11 M J ' ^ T g ^ T p f Polarity leMax Amps VCECHSUS Volts 2N1015 2N1015A 2N1015B 2N1015C

delco

Abstract: 2n1100 delco Elcoma transitron solitron 2n1036 2N1103 2N1074 2N1076 2N1077
Contextual Info: DISCONTINUED PART NUMBERS Part Number Manufacturer Manufacturer Delco Elecs PPC Product 2N1012 Generallnst 2N1013 2N1014 2N1015 Franel Corp PPC Product 2N1015A Franel Corp PPC Product Semitronics 2N1015B Franel Corp PPC Product 2N1015C Elec Trans Gnrl Trans

2N2222A 338

Abstract: TFK 949 2N1167 halbleiter index transistor ad161 BSY19 al103 ac128 TFK 404 Tfk 931
Contextual Info: Towers' International Transistor Selector Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U p date One London: NEW YORK