KT808AM
Abstract: 2SD867Y KT808a BDX51 2N3076 kt808 7F54 2SC1343 2sd339 BD245C
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 35 40 45 50 55 60 65 70 >= -80 BDS12 SDT7473 2N4070 2N6232 SDT7140 SDT7140 SDT7140 SDT7B03 SDT7B03 SDT7B03 2SC3568L 2N5289 PT2986 2SC3568K 2N2227 2N3471 2N2231 2N3475 S2N5541-4 S2N5541-5 S2N5542-4
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o-247ot-186o-111t0-61+10kt808am2sd867ykt808abdx512n3076kt8087f542sc13432sd339bd245c
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KT808AM
Abstract: KT808a kt808 2N3426 2N3076 solitron 2N3455 siemens SID 3 2N3414 GE 2n3400 2N3432
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 35 40 45 50 55 60 65 70 >= -80 BDS12 SDT7473 2N4070 2N6232 SDT7140 SDT7140 SDT7140 SDT7B03 SDT7B03 SDT7B03 2SC3568L 2N5289 PT2986 2SC3568K 2N2227 2N3471 2N2231 2N3475 S2N5541-4 S2N5541-5 S2N5542-4
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2n3495s2n34962n34972n3498+142n34992n35002n35012n3502kt808amkt808akt8082n34262n3076solitron 2n3455siemens sid 32n3414 ge2n34002n3432
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Contextual Info: POWER DARLINGTONS TYPE NO. PT MAXIMUM RATINGS @ 25'C BV cbo B V ceo BVebo Ic V V Watts V A Ic VCE A V Sat Test Voltages Conditions VCE Ib V be Ic I ebo V V A A ma hFE MIN MAX 2N2226 150 50 50 15 10 250 2000 4 6 3.5 4 9 .15 30 2N2227 150 100 100 15 10 250 2000 4
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2n22262n22272n22282n2229+62n22302n22312n34770q43sctwx-510-224-6582o-114
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2N3480
Abstract: 2N3399 TP3565 transitron pa6013 LOW-POWER SILICON NPN 2n4956 2SC644 S 2n3400 2SC712
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 V BR CEO hFE Ie Max A V(BR)CEO 5 Manufacturer fT (Hz) 132 135 135 135 135 144 144 150 150 150 A8T3392 2N3395 TP3565 2N4286 2SC712 MPS3565 MPS3565 2SC1849 2SC1849
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e01702ljc500pmmbc1009f5tec9013h+14hse1302n4956pn3565a8t33922n33952n34802n3399tp3565transitronpa6013low-power silicon npn2sc644 s2n34002sc712
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2u 62 diode
Abstract: KT808A diode 2U 81 kt808am 2N3076 2SD867Y kt808
Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V (BR)CEO (V) PD Max hFE *T ON) Min (Hz) Max toN Max (A) (8) ICBO r (CE)Mt Toper Max (Ohms) Max (°C) Package Style Devices 20 Watts or More, (Cont'd) . . . .5 . .10 . . .15 . -20
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sdt3208sdt7140bdt95bdt96+72u 62 diodekt808adiode 2u 81kt808am2n30762sd867ykt808
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2N1016
Abstract: 2N2772 2N2771 2N1015 2N1016D 2N2227 TO82 2N2228 2N1016B 2N3430
Contextual Info: • 4 ñ b c1 E m 3 D D G D 4 3 ‘ì DbD discrete devices JEmitronicr hot line TOLL FREE NUMBER 800-777-3960 silicon transistors silicon power transistors HIGH S.O.A. NPN POWER TRANSISTORS 6 - 2 0 Amperes JEDEC/TYPE 151 153 152 154 2N1015, A, B, C, D 2N1016,
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ddgd43t2n10152n10162n3429-32+122n1015a2n1016a2n3429152-to-822n27722n27712n1016d2n2227to822n22282n1016b2n3430
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2N3017
Contextual Info: SILICON NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type 2N2812 2N2813 2N2814 2N2815 2N2816 2N2817 2N2818 2N2819 2N2821 2N2822 2N2823 2N2824 2N2825 2N2858 2N2859 2N2877 2N2878 2N2879 2N2880 2N2881 2N2882 2N2892 2N2893 2N2911 2N2983 2N2984
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2n28122n28132n28142n2815+72n28162n28172n28182n28192n28212n28222n3017
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2N2228
Contextual Info: POWER DARLINGTONS TYPE NO. PT MAXIMUM RATINGS @ 25°C BVcbo BVcto BVebo le V Watts V V A hIFE MIN MAX & le VCE A V % Sat Test Voltages Conditions V ce V be le Ib I ebo V V A A ma 2N2226 150 50 50 15 10 250 2000 4 6 3.5 4 9 .15 30 2N2227 150 100 100 15 10 250 2000 4
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2n22262n22272n22282n2229+62n22302n22312n22322n22332n34702n3471
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westinghouse transistors
Abstract: westinghouse power transistor westinghouse semiconductor WESTINGHOUSE transistor WESTINGHOUSE ELECTRIC 2N2228 westinghouse 2N3470 2N3470-73 2N2226
Contextual Info: 13 O e : rn m x H 'ZL n ! ! i Page 1 S ilico n P ow er T ra n s is to rs U ltra-H igh G ain J E D E C T y p e s 2N2226-33 2N3470-77 Wesîinghouse -J IM vO O IM 10 Amperes, 150 Watts Collector-to-Emitter Voltage 50 to 200 Volts Ap p licatio n Therm al C h a ra cteristics
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tcss752n22262n34702n2226-29/2n3470-73+132n2230-33/2n3474-7724unf-2athreads2n2226-3375dio-h_2n3470-77westinghouse transistorswestinghouse power transistorwestinghouse semiconductorwestinghouse transistorwestinghouse electric2n2228westinghouse2n3470-73
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2N2772
Abstract: TO82 2N2232 2N3475 2n2227 2n3471 2n2228 2n1016 2N2226 2N1050C
Contextual Info: discrete devices JEmitronicr hot line TO LL FREE NUMBER 800-777-3960 silicon transistors silicon power transistors HIGH S.O.A. NPN POWER TRANSISTORS 6 - 2 0 Amperes JE D E C /T Y P E 151 153 152 154 2N1015, A, B, C, D 2N1016, A, B, C, D 2N3429-32 163 164 PEAK CURRENT
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2n10152n1015a2n10162n1016a+132n34292n3429-32mt-52mt-332n2772to822n22322n34752n22272n34712n22282n22262n1050c
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2N2228
Abstract: 2N2226 2N2227 2N2229 2N2230 2N2231 2N2232 2N2233 2N3470 2N3471
Contextual Info: A P I ELECTRONICS INC 004 3 5 ^ 2 L.1E I GDDD3G1 bM7 • APIC POWER DARLINGTONS TYPE NO. PT @ 25°C Watts MAXIMUM RATINGS B V cbo B V ceo B V ebo Ic V V V A Sat Voltages <$.t> hFE Ic VCE V ce V be MIN MAX A V V V Test Conditions Ib Ic I ebo A A ma 2N2226
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2n22262n22272n22282n2229+62n22302n22312n22322n22332n34702n3471
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2N2228
Abstract: 2N2227 2N2229 2N3471 2N2232 2N2231 SOLID POWER CORP BVCEO 2000 PT 10000 2N2226
Contextual Info: SOLI» POWER CORP TS »F|fi3t,S70a 0000 1 5 3 |~ ~ T'33-6I POW ER DARLINGTONS TYPE NO. PT MAXIMUM RATINGS @ 25°C BVcao BV ceo BV ebo le V Watts V V A hIFE @ MIN MAX le A VCE V Sat Voltages V ce V be V V Test Conditions Ib le Iebo A A ma 2N2226 150 50 50 15
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2n22262n22272n22282n2229+92n22302n22312n22322n22332n34702n3471solid power corpbvceo 2000pt 10000
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2N3406
Abstract: optron 2N3459 rca 40397 2sc711 BC109C MOTOROLA api 560 transitron 2N3436 motorola 2SC631
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 65 70 75 80 85 90 95 704 V BR CEO hFE V} V(BR)CEO 5 Manufacturer HSE415 2SC870 2SC538 2SC539 A5T3391 A5T3391A A8T3391 A8T3391A MPS3391A MPS3391A 1 2SC368 BSY90 BSY90 TBC338A 2N3391
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hse4152sc8702sc5382sc539+15a5t3391a5t3391aa8t3391a8t3391amps3391a2n3406optron2n3459rca 403972sc711bc109c motorolaapi 560transitron2n3436 motorola2sc631
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2N4148
Abstract: 2N3638 transistor 2N3638 Transistor 2n3005 2N2706 2N3731 2n4146 transistor 2n2706 2N4250 2N4147
Contextual Info: DIGITRON ELECTRONIC CORP 3bE D SfiMStrO? 0□ □ □ □ □ S DGE Page #5 DIQITRON ELECTRONIC” 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 Fax J O H N J. S C H W A R T Z ENGINEERING D I G I T R O N E LE C TR ON IC S , CORP.
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2n2419a2n30012n37302n4002+152n41402n42992n24832n30022n37312n40032n41482n3638 transistor2n3638transistor 2n30052n27062n4146transistor 2n27062n42502n4147
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RCA SK CROSS-REFERENCE
Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered
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rca sk cross-referencecd40032n2505tf408+61n4465250pa1202n3017pt 3570 trw rfpa189semicon volume 1
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transistor c2060
Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,
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an-134transistor c2060transistor shortform datasheet & cross references1n4465+7c1906 transistorgermanium itt3n58in939mc1230f2n3866 motorolac943 transistor
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y51 h 120c
Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK
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500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711
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2N2228
Abstract: 2N2229 to-53 2N3472 2N2226 2N2227 2N2230 2N2231 2N2232 2N2233
Contextual Info: POWER DARLINGTONS TYPE NO. PT MAXIMUM RATINGS @ 25'C BV cbo B V ceo BVebo Ic V V Watts V A Ic VCE A V Sat Test Voltages Conditions VCE Ib V be Ic I ebo V V A A ma hFE MIN MAX 2N2226 150 50 50 15 10 250 2000 4 6 3.5 4 9 .15 30 2N2227 150 100 100 15 10 250 2000 4
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2n22262n22272n22282n2229+82n22302n22312n22322n2233twx-510-224-6582000d431to-532n3472
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SIEMENS 5SN
Abstract: 2N3406 UNITRODE DIODE 240 39 sot-89 2n3400 2N3483 2N3436 motorola
Contextual Info: POWER SILICON PNP Item Number Part Number I C 15 20 25 35 45 55 60 65 320 300 300 300 400 80M 70M 70M 70M KSA931 2N3468 2S8733 2N6094 8CX69-10 2S8956 8CX69-16 8CX69-25 MPS6651 MPS6651 Samsung See Index NEC Corp JA See Index Siemens Akt Matsushita Siemens Akt
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o-126o-126var2s85492s8527+122s85282s81217ksa9312n34682s8733siemens 5sn2n3406unitrode diode 24039 sot-892n34002n34832n3436 motorola
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2N2227
Abstract: 2N2228 2883 to-53 TYPE 224 2N2226 2N2229 2N2230 2N2231 2N2232
Contextual Info: POWER DARLINGTONS TYPE NO. PT MAXIMUM RATINGS @ 25'C BV cbo B V ceo BVebo Ic V V Watts V A Ic VCE A V Sat Test Voltages Conditions VCE Ib V be Ic I ebo V V A A ma hFE MIN MAX ? 2N2226 150 50 50 15 10 250 2000 4 6 3.5 4 9 .15 30 2N2227 150 100 100 15 10 250 2000 4
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2n22262n22272n22282n2229+92n22302n22312n22322n2233twx-510-224-6582ioh151-2883to-53type 224
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NPN 200 VOLTS 20 Amps POWER TRANSISTOR
Abstract: 2N3021 2n3223 2N3589 NPN 20 Amps POWER TRANSISTOR to63 MT27 NPN 90 Amps POWER TRANSISTOR to63 2N3025 2NXXXX TO63 package
Contextual Info: r ^ 3 *t3 SILICON TRANSISTOR C O R P _ 8 8 0 0 0 7 9 2 DE lflES40ea O O O O T T S b flfl NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type Polarity lcMax Amps VCECKSUS) Volts Package Type Polarity . ^ 33^77 lc Max Amps VCEO(SUS)
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fles40earr33t772n28122n2813+162n28142n28152n28162n28172n28182n2819npn 200 volts 20 amps power transistor2n30212n32232n3589npn 20 amps power transistor to63mt27npn 90 amps power transistor to632n30252nxxxxto63 package
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2N2228
Abstract: 2N2227
Contextual Info: POWER DARLINGTONS TYPE NO. PT M AXIMUM RATINGS @ le 25°C BV cbo BV ceo BV ebo V V V A Watts MIN MAX B 1 le V« A V Sat Voltages VCE V be V V h« Test Conditions le Is ItBO A A ma 2N2226 150 50 50 15 10 250 2000 4 6 3.5 4 9 .15 30 2N2227 150 100 100 15 10
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2n22262n22272n22282n2229+62n22302n22312n22322n22332n34702n3471
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2N4211
Abstract: 2N1514 2N2753 2n3054 2N2338 2N2580 2N5928 2N3472 2N2227 2N2228
Contextual Info: Table 1 A B C D E F G H I 1 163-04 1748-0630 1768-0610 2N1015 2N2015 2N2739 2N3743 2N4002 2N6046 2 163-06 1748-0810 1768-0620 2N1015A 2N2016 2N2740 2N3771 2N4003 2N6047 3 163-08 1748-0820 1768-0630 2N1015B 2N2109 2N2741 2N3772 2N4210 2N6048 4 163-10 1748-0830 1768-0810 2N1015C 2N2110
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2n10152n20152n27392n3743+162n40022n60462n1015a2n20162n27402n37712n42112n15142n27532n30542n23382n25802n59282n34722n22272n2228
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2N2764
Abstract: 2N2119 2N2126 16420 2N6062 2N4211 2N2823 2N2763 16-430 2N2117
Contextual Info: BIG IDEAS IN BIG POWER • PowerTech Replacement Parts Are Available For The Following Part Numbers: PART # 2N1936 2N1937 2N2109 2N2110 2N2111 2N2112 2N2113 2N2114 2N2116 2N2117 2N2118 2N2119 2N2123 2N2124 2N2125 2N2126 2N2130 2N2131 2N2132 2N2133 2N2757 2N2758
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2n19362n19372n21092n2110+152n21112n21122n21132n21142n21162n21172n27642n21192n2126164202n60622n42112n28232n276316-430
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