2N2911 Search Results

2N3017

Contextual Info: SILICON NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type 2N2812 2N2813 2N2814 2N2815 2N2816 2N2817 2N2818 2N2819 2N2821 2N2822 2N2823 2N2824 2N2825 2N2858 2N2859 2N2877 2N2878 2N2879 2N2880 2N2881 2N2882 2N2892 2N2893 2N2911 2N2983 2N2984

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

pnp 900v

Abstract: SRSP5014 L3045 2N5415 2N1480 2N1481 2N1482 2N2911 2N5784 2N5786
Contextual Info: Silicon power transistors NPN TO-5 = 1.0 to 3.5A fT = 1.0 to 40 MHz V ce o is u s = 4 0 to 9 0 0 V I if e Type# PNP Comple­ VcEO SUS) ment (Volts) @ Ic/VcE (Min-Max @ A /V ) VcE(SAT) @ Ic / I b (V @ A/A) Vbe @ Ic/VcE (V @ A/V) Pd @ ( lie Cob fr Te = 25°C

2N2035

Abstract: 2N2033 2N1479 2N2034 2n1117 2N1116 2N1480 2N1481 2N1482 2N1700
Contextual Info: 8365700 S O L ID POWER CORP 95C 0 0 0 9 8 SOLID POWER CORP T5 D 'T>~$r&-0/ Dlf| fl3L.5700 DODODTfl 4 POW ER TR A N SISTO R S V Sat Test Voltages Conditions Ic Ib I ebo V ce V be A A ma V V 6 5.0 4.0 .5 .05 100 .2 .02 100 PT TYPE NO. 2N1116 TO-5 M AXIM UM RATINGS

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2N2753

Abstract: S1482 JAN2N1480 jantx 2N2771 2N2034 jan2n1482 2N2580M 2n2110
Contextual Info: IN D EX Type No. 2N389 2N389A 2N424 2N424A 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B 2N1016C 2M 016D 2N1016E 2N1016F 2N1047 2N1047A 2N1047B 2N1048 2N1048A 2N1048B 2N1049 2N1049A 2N1049B 2N1050 2N1050A 2N1050B 2N1067 2N1068

2N2035

Abstract: 2n1117 2n1700 2N1701 2N1116 2N1479 2N1480 2N1481 2N1482 2N2033
Contextual Info: POWER TRANSISTORS TYPE NO. TO-5 PT MAXIMUM RATINGS @ 25°C 135351Î3S531135?31 le V V V A Watts , «bV a Ic hre MIN MAX Sat Voltages V ce Vk A V V V Test Conditions Ic IB I ebo A A ma 2N1116 .6 60 60 6 .8 40 150 .5 6 5.0 4.0 .5 .05 "Töo 2N1117 .6 60 60 6

AP1085

Abstract: 2N2033 AP1089 2N2034 2N1701 2N2034A 2N2035 2N2304 2N2828 2N2829
Contextual Info: A P I E L E C T R ON I C S I NC 00^3592 A P I 2b ELECTRONICS dF | DDMBSTE D OO DS n INC □ V^T^S^-ÒS 26C 00219 C O L L E C T O R C U R R E N T = 2 A M P S P N P T Y P E S - C O N T IN U E D D evice No C ase A P I 090 A P I 105 A P I 106 A P I 107 T O -66

2N2033

Abstract: 2N1116 2N1117 2N1479 2N1480 2N1481 2N1482 2N1700 2N2034 2N2858
Contextual Info: POWER TRANSISTORS TYPE NO. TO-5 PT MAXIMUM RATINGS @ 25°C 135351Ì3S531135?31 le V V V A Watts , hre MIN MAX «ì> le Va A V Sat Voltages Test Conditions V ce Vk le lB I ebo V V A A ma 2N1116 .6 60 60 6 .8 40 150 .5 6 5.0 4.0 .5 .05 "Too 2N1117 .6 60 60 6

2N2304

Abstract: 2N2858 2N1479 2n1117 2N2308 2N1116 2N1480 2N1481 2N1482 2N1700
Contextual Info: P I ELECTRONICS INC blE D • □OHBS'lE 000027b bbl ■ AMC 7-Jl-OZ" POWER TRANSISTORS w TO-5 TO-8 4 TYPE NO. PT @ 25°C Watts MAXIMUM RATINGS Ic B V cb o B V ceo B V ebo V A V V hFE Sat Voltages 8 MIN MAX Ic A V V V V be V ce V ce Test Conditions Ib lEBO

2SK847

Abstract: 2N3305 2SK734 2N2807A 2N2970 2n2968 2n2709 2SK733 2N2971 2SK794
Contextual Info: STI Type: 2SK696 Notes: Breakdown Voltage: 1000 Continuous Current: 3 RDS on Ohm: 4.0 Trans Conductance Mhos: 1.2 Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID: Case Style: TO-247

LG color tv Circuit Diagram schematics

Abstract: free transistor equivalent book 2sc NPN TRANSISTORS LIST ACCORDING TO CURRENT, VOLTAG RCA SK CROSS-REFERENCE KIA 4318 transistor cs 9012 Til 322A sx3704 diode d.a.t.a. book 1N1007
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

2N2035

Abstract: AP1085 ap1089 2N2033 IC AP1029 2N1701 2N2034 2N2034A 2N2304 2N2828
Contextual Info: A P I E L E C T R ON I C S I NC 00^3592 A P I 2b ELECTRONICS dF | DDMBSTE D OO DS n INC □ V^T^S^-ÒS 26C 00219 C O L L E C T O R C U R R E N T = 2 A M P S P N P T Y P E S - C O N T IN U E D D evice No C ase A P I 090 A P I 105 A P I 106 A P I 107 T O -66

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

2n1701

Abstract: 2N2035
Contextual Info: POWER TRANSISTORS TYPE NO TO-5 PT MAXIMUM RATINGS @ 25°C •ü'ÆÜl f:fKT51 l:WT51 Ic A V V V Watts 2N1116 .6 60 60 2N1117 60 60 2N1479 .6 5.0 60 40 2N1480 5.0 100 55 2N1481 5.0 60 2N1482 5.0 2N1700 6 I Hfe , A V V ce V VB£ V Ic MIN MAX Sat Voltages <iD

NPN 200 VOLTS 20 Amps POWER TRANSISTOR

Abstract: 2N3021 2n3223 2N3589 NPN 20 Amps POWER TRANSISTOR to63 MT27 NPN 90 Amps POWER TRANSISTOR to63 2N3025 2NXXXX TO63 package
Contextual Info: r ^ 3 *t3 SILICON TRANSISTOR C O R P _ 8 8 0 0 0 7 9 2 DE lflES40ea O O O O T T S b flfl NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type Polarity lcMax Amps VCECKSUS) Volts Package Type Polarity . ^ 33^77 lc Max Amps VCEO(SUS)

Contextual Info: POWER TRANSISTORS TYPE NO. TO-5 PT MAXIMUM RATINGS @ 25°C 135351Ì3S531135?31 le V V V A Watts , hre MIN MAX «ì> le Va A V Sat Voltages Test Conditions V ce Vk le lB I ebo V V A A ma 2N1116 .6 60 60 6 .8 40 150 .5 6 5.0 4.0 .5 .05 "Too 2N1117 .6 60 60 6

Contextual Info: A P I ELECTRONICS INC 00^3592 A P I St ELECTRONICS d ËT| INC Q0M35T5 0000211 0 Q-~f^33-0 26C 00219 COLLECTOR CURRENT = 2 AMPS PN P TYPES - CONTINUED Device No C ase VCBO Volts AP1090 AP1105 AP1106 AP1107 TO -66 TO -4 6 TO -5 TO -66 125 140 140 140 VCEO sus)

1N6227

Abstract: silec GG 84 1n623 2G300 chn 543 IC HXJ 2038 1N52398 IN5240 1n48 zener diode
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: POWER TRANSISTORS # TO-5 PT TYPE NO. 2N1116 MAXIMUM RATINCS B V cbo B V ceo B V ïb o le V V A V Watts hFE @ 25°C .6 60 60 6 .8 MIN MAX 150 40 Sat Voltages Test Conditions le Ib A A D le V CE A V Va V V be V .5 5.0 4.0 .5 .05 100 .2 .02 100 6 Iebo ma 2N1117