2N2035 Search Results

2N2035

Abstract: power BJT
Contextual Info: 2N2035 Si NPN Power BJT 8.00 Transistors Transistors Bipolar Si NPN. 1 of 2 Home Part Number: 2N2035 Online Store 2N2035 Diodes Si NPN Po w er BJ T Transistors Enter code INTER3 at checkout.* Integrated Circuits

B0935

Abstract: 2s0880 je181 to127 2SC1983 Sanken 2S0762 B0177 to-53 MJE31A GS2013 G
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 25 30 35 40 45 50 >= 2.5 A, 2N389 2N1470 BOT29A BOT29A BOT29AF B0177 2N1079 2N1080 2N3418S 2N2033 2N2034 2N2035 2N2036 2N2828 2N2829 2N1886 R4922 B0116 2N3418 BOT31AF BOT31AF MJE31A 2N4232 2N4232A 042C7

2N2090

Abstract: 2N2095A 2N2022 2N2040 Emihus 2N2020 2n2063 2n2038 2N2082 2N2003
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 15 20 >= 30 Solitron PPC Product PPC Product Solitron Solitron PPC Product Sid St Dvcs Sid St Dvcs Sid St Dvcs Sid St Dvcs g~:~:g~ ~:~~: ~~: KSP1151 KSP1171 SOT7A07 SOT7A07 SOT7A07 SOT7607 SOT7607 SOn607

2N2035

Abstract: 2N2033 2N1479 2N2034 2n1117 2N1116 2N1480 2N1481 2N1482 2N1700
Contextual Info: 8365700 S O L ID POWER CORP 95C 0 0 0 9 8 SOLID POWER CORP T5 D 'T>~$r&-0/ Dlf| fl3L.5700 DODODTfl 4 POW ER TR A N SISTO R S V Sat Test Voltages Conditions Ic Ib I ebo V ce V be A A ma V V 6 5.0 4.0 .5 .05 100 .2 .02 100 PT TYPE NO. 2N1116 TO-5 M AXIM UM RATINGS

2N1384

Abstract: 2N993 2N1516 2N1151 2N1378 2N1034 2N1036 2N1150 2N1037 2N1046
Contextual Info: D Ì G I T R O N E L E C T R O N I C CO RP 3bE D WM T W Ë DGE -p.'J 7 2flMHt.07 O G O O O D B Page MQITKON ELECTRONIC” CORP 110 Hillside Avenue • Springfield, New Jersey 07081 • 201-379-9016 • 201-379-9019 Fax JDHN J. S C H W A R T Z ENGINEERING DIGITRON ELECTRONICS, CORP

AL102 ATES

Abstract: 2N2222A mps KR206 AD149 TIS58 TIS88 SFT353 2N2431 2N4265 BFY29
Contextual Info: SECOND BOOK OF TRAISKTIR EQUIVALENTS AIR SPIRTITOTER IT I.I.OMMI BERNARD BABANI publishing LTD The Grampians Shepherds Bush Road London W67NF England. Although every care Is taken with the preparation of this book, the publishers will not be responsible

2N2753

Abstract: S1482 JAN2N1480 jantx 2N2771 2N2034 jan2n1482 2N2580M 2n2110
Contextual Info: IN D EX Type No. 2N389 2N389A 2N424 2N424A 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B 2N1016C 2M 016D 2N1016E 2N1016F 2N1047 2N1047A 2N1047B 2N1048 2N1048A 2N1048B 2N1049 2N1049A 2N1049B 2N1050 2N1050A 2N1050B 2N1067 2N1068

2N2063A

Abstract: 2N2082 Emihus 2n2007 esr bc63 2N2019 2N2097A 2n2114 2n2079 2n2102 motorola
Contextual Info: LOW-POWER SILICON NPN Item Number Part Number 10 BC141-S BFW24 BC637 BFS61 2N489S BFX34 C266 C26S 2N1890 2N871 ~~rt:~OS 1S 20 BC44S BC44S-18 BC44S-S 2SC69 MPS-AOS MPS-AOS MPS-AOS PMBTASS ~~:0~~55 -2S 30 2N2060A 2N2060B 2N2SS2 2N2SS2A 2N2980 2N2980 2N2980 BFX99

aeg diode Si 61 L

Abstract: aeg diodes D6 SGS Transistors BC23B SILICONIX U315 MZ306 BY126 bcv59 ac128 2N3680
Contextual Info: Semiconductor Data Book Semiconductor Data Book Characteristics of approx. 10 000 Transistors, FETs, UJTs, Diodes, Rectifiers, Optical Semiconductors, Triacs and SCRs, Compiled by A. M. Ball Head of Physics, Teign School Newnes Technical Books Newnes Technical Books

transistor 2N4

Abstract: ST25C transistor 2N407 transistor 2SA114 TFK 808 transistor 2sc124 SF1222 GE2 TRANSISTOR TFK 877 TFK 748
Contextual Info: $ 1.50 2 -H 2 1 $ % Cat. No. SSH-5 ^TRANSISTOR SUBSTITUTION HANDBOOK by The Howard W. Sams Engineering Staff HOWARD W. SAMS & CO., INC. THE BOBBS-MERRILL COMPANY, INC. Indianapolis • New York i FIFTH EDITION FIRST PRINTING — JANUARY, 1964 FIRST EDITION

2N2035

Abstract: 2n1117 2n1700 2N1701 2N1116 2N1479 2N1480 2N1481 2N1482 2N2033
Contextual Info: POWER TRANSISTORS TYPE NO. TO-5 PT MAXIMUM RATINGS @ 25°C 135351Î3S531135?31 le V V V A Watts , «bV a Ic hre MIN MAX Sat Voltages V ce Vk A V V V Test Conditions Ic IB I ebo A A ma 2N1116 .6 60 60 6 .8 40 150 .5 6 5.0 4.0 .5 .05 "Töo 2N1117 .6 60 60 6

AP1085

Abstract: 2N2033 AP1089 2N2034 2N1701 2N2034A 2N2035 2N2304 2N2828 2N2829
Contextual Info: A P I E L E C T R ON I C S I NC 00^3592 A P I 2b ELECTRONICS dF | DDMBSTE D OO DS n INC □ V^T^S^-ÒS 26C 00219 C O L L E C T O R C U R R E N T = 2 A M P S P N P T Y P E S - C O N T IN U E D D evice No C ase A P I 090 A P I 105 A P I 106 A P I 107 T O -66

2N2033

Abstract: 2N1116 2N1117 2N1479 2N1480 2N1481 2N1482 2N1700 2N2034 2N2858
Contextual Info: POWER TRANSISTORS TYPE NO. TO-5 PT MAXIMUM RATINGS @ 25°C 135351Ì3S531135?31 le V V V A Watts , hre MIN MAX «ì> le Va A V Sat Voltages Test Conditions V ce Vk le lB I ebo V V A A ma 2N1116 .6 60 60 6 .8 40 150 .5 6 5.0 4.0 .5 .05 "Too 2N1117 .6 60 60 6

Transistors 2n551

Abstract: Heat Sink to-39 2N1904 2N5068 2N2995 2N3916 2N3599 2N2951 2N3142 2N3444
Contextual Info: INTEX/ SEflITRÔNICS CORP j e m i E T o 27E D • MôblEHb GD0D2Ö? S discrete devices SEMICONDUCTORS n Sem itronics Corp. 7 ^ - * 2 .7 - silicon transistors cont’d - T - 3 3 O - 0 silicon power transistors rn * Polarity Power Dissipation @ 25°C Watts

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

2N2035

Abstract: AP1085 ap1089 2N2033 IC AP1029 2N1701 2N2034 2N2034A 2N2304 2N2828
Contextual Info: A P I E L E C T R ON I C S I NC 00^3592 A P I 2b ELECTRONICS dF | DDMBSTE D OO DS n INC □ V^T^S^-ÒS 26C 00219 C O L L E C T O R C U R R E N T = 2 A M P S P N P T Y P E S - C O N T IN U E D D evice No C ase A P I 090 A P I 105 A P I 106 A P I 107 T O -66

Thyristor Xo 602 MA

Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and

2N2222A mps

Abstract: 2N512AB 2n2222 mps 1N1096 1N589 1n4007 - 2n4001 2N698 SCR 1N233A 1N20461 2N3304
Contextual Info: ¿S c iscre:e devices ^ ! jemitronicr hot line TOLL FREE NUMBER 800-777-3960 alpha-numeric index Type 1N34A 1N35 1N36 1N38.A.B 1N40 1N42 1N44/ 1N51 1N52,A 1N54,A 1N55AB 1N56,A 1N57,A 1N58.A 1N60.A 1N61 1N62 1N63,A 1N65 1N66.A 1N67.A 1N68.A 1N69,A 1N70,A 1N71

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

2N2035

Contextual Info: HOME | CATALOG | CART |EXPRESS CHECKOUT | PARTS WATCH | NEW ITEMS |RFQ| l l Enter Your Part # Home Online Store ¡ Diode s ¡ Transistors ¡ Inte grate d C ircuits ¡ O ptoe le ctronics ¡ Thyristors l Products ¡ Se arch for Parts ¡ R e que st a Q uote ¡ Te st House s

2n1701

Abstract: 2N2035
Contextual Info: POWER TRANSISTORS TYPE NO TO-5 PT MAXIMUM RATINGS @ 25°C •ü'ÆÜl f:fKT51 l:WT51 Ic A V V V Watts 2N1116 .6 60 60 2N1117 60 60 2N1479 .6 5.0 60 40 2N1480 5.0 100 55 2N1481 5.0 60 2N1482 5.0 2N1700 6 I Hfe , A V V ce V VB£ V Ic MIN MAX Sat Voltages <iD

TO82 TRANSISTOR

Abstract: TO82 2N2227
Contextual Info: ^ ^ ^ 2 5 4022 CIL ICON T R A N S I S T O R C O RP öö NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS „ . 6 Ô D 00791 7"j 3 3 V / 3 " DE | ù 25MQSa 00007=11 M J ' ^ T g ^ T p f Polarity leMax Amps VCECHSUS Volts 2N1015 2N1015A 2N1015B 2N1015C

Contextual Info: POWER TRANSISTORS TYPE NO. TO-5 PT MAXIMUM RATINGS @ 25°C 135351Ì3S531135?31 le V V V A Watts , hre MIN MAX «ì> le Va A V Sat Voltages Test Conditions V ce Vk le lB I ebo V V A A ma 2N1116 .6 60 60 6 .8 40 150 .5 6 5.0 4.0 .5 .05 "Too 2N1117 .6 60 60 6