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    2N3142 Search Results

    2N3142 Datasheets (10)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2N3142
    Motorola Motorola Semiconductor Datasheet Library Scan PDF 80.01KB 1
    2N3142
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 82.23KB 1
    2N3142
    Unknown Basic Transistor and Cross Reference Specification Scan PDF 48.52KB 1
    2N3142
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 158.02KB 1
    2N3142
    Unknown GE Transistor Specifications Scan PDF 37.79KB 1
    2N3142
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 86.44KB 1
    2N3142
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 124.26KB 1
    2N3142
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 84.96KB 1
    2N3142
    Semitronics Silicon Power Transistors Scan PDF 296.46KB 4
    2N3142
    Silicon Transistor Industrial Grade Power Transistors Scan PDF 71.32KB 1

    2N3142 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    b0349

    Abstract: B0817 1/transistor b0349 to-53 2N3577 blx10 diode 300U 2S078 B0379 b0371
    Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 >= 20 SOT5512 SOT5512 SOT5912 B0377-25 2S01083 2S0975 B0321 B0321 ~g~~~ 25 30 2S01779 2N3138 2N3140 2N3142 2N3144 BOY11 BOY11 2S012A ~~~1~8U 35 40 BSS15 2N5320 NS06178 2N6179 S2N4150 S2N4150-1 BOB29-10 BOB29-6


    Original
    bc441-5b0377-102n55982s078+15nsou052n671692gu0592pu05b0377-162s078-111b0349b08171/transistor b0349to-532n3577blx10diode 300ub0379b0371 PDF

    2N3017

    Contextual Info: SILICON NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type 2N2812 2N2813 2N2814 2N2815 2N2816 2N2817 2N2818 2N2819 2N2821 2N2822 2N2823 2N2824 2N2825 2N2858 2N2859 2N2877 2N2878 2N2879 2N2880 2N2881 2N2882 2N2892 2N2893 2N2911 2N2983 2N2984


    OCR Scan
    2n28122n28132n28142n2815+72n28162n28172n28182n28192n28212n28222n3017 PDF

    2S721

    Abstract: bdy11 TO53 to-53 TO5-3 KT932A SDT5913
    Contextual Info: POWER SILICON TRANSISTORS Item Number Part Number Manufacturer Type Ic Max A V(BR)CE on hFE fT ICBO Max Max k>N Max ON) Min (Hz) (A) (s) PD r (CE)Mt Max (Ohms) Toper Max (°C) Package Style Devices 20 Watts r More, (Cont'd) . . . .5 . . . .10 . . . .15 .


    Original
    st4502s0132n23832s721+82s7232n3138bdy11to53to-53to5-3kt932asdt5913 PDF

    Transistors 2n551

    Abstract: Heat Sink to-39 2N1904 2N5068 2N2995 2N3916 2N3599 2N2951 2N3142 2N3444
    Contextual Info: INTEX/ SEflITRÔNICS CORP j e m i E T o 27E D • MôblEHb GD0D2Ö? S discrete devices SEMICONDUCTORS n Sem itronics Corp. 7 ^ - * 2 .7 - silicon transistors cont’d - T - 3 3 O - 0 silicon power transistors rn * Polarity Power Dissipation @ 25°C Watts


    OCR Scan
    2n3392n339a2n3402n340a+162n3412n341a2n3422n342a2n3432n343atransistors 2n551heat sink to-392n19042n50682n29952n39162n35992n29512n31422n3444 PDF

    RCA SK CROSS-REFERENCE

    Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
    Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered


    OCR Scan
    rca sk cross-referencecd40032n2505tf408+61n4465250pa1202n3017pt 3570 trw rfpa189semicon volume 1 PDF

    Thyristor Xo 602 MA

    Abstract: 5A/1/Thyristor Xo 602 MA ah 90360 1N126 2N339 2N3201 transistor bf 175 germanium transistor epitaxial mesa 2N241
    Contextual Info: GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS GENERAL ELECTRIC THYRISTOR AND DIODE CONDENSED SPECIFICATIONS This chapter is primarily devoted to condensed specifications of General Electric’s thyristors, thyristor assemblies, trigger devices, and


    OCR Scan
    thyristor xo 602 ma5a/1/thyristor xo 602 maah 903601n126+62n3392n3201transistor bf 175germanium transistorepitaxial mesa2n241 PDF

    2N3920

    Abstract: 2N648 2N2004 2N2995 2N2202 2N2860 TO11 2N2228 2N29SA 2n4307
    Contextual Info: £ ^ I jemitronicr hot line discrete devices TOLL FREE NUMBER 800-777-3960 silicon transistors cont-d silicon small signal transistors choppers Type Polarity Power Dissipation @ 25°C mw tlFE @ lc Tj (°C) BVcbo (volts) HILL (volts) Vet (SAT @ lc (Min.)


    OCR Scan
    2n9412n9422n9432n944+162n9452n9462n16762n16772n19172n19182n39202n6482n20042n29952n22022n2860to112n22282n29sa2n4307 PDF

    transistor c2060

    Abstract: Transistor Shortform Datasheet & Cross References 1N4465 C1906 transistor Germanium itt 3N58 IN939 MC1230F 2N3866 MOTOROLA C943 transistor
    Contextual Info: Data Book Updating Service I Table of Contents How to Use the Data Book I > INTRODUCTION Complete I N . . . INDEX numerical index o f all ElA-registered device types, with major electrical specifications 2N . . . & 3N . . . INDEX Complete numerical index of all ElA-registered device types,


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    an-134transistor c2060transistor shortform datasheet & cross references1n4465+7c1906 transistorgermanium itt3n58in939mc1230f2n3866 motorolac943 transistor PDF

    y51 h 120c

    Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
    Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK


    OCR Scan
    500ma240mwfy51 h 120cbd124+8kt368bfq59silec semiconductorsbd214al103afy18bd192mm1711 PDF

    NPN 200 VOLTS 20 Amps POWER TRANSISTOR

    Abstract: 2N3021 2n3223 2N3589 NPN 20 Amps POWER TRANSISTOR to63 MT27 NPN 90 Amps POWER TRANSISTOR to63 2N3025 2NXXXX TO63 package
    Contextual Info: r ^ 3 *t3 SILICON TRANSISTOR C O R P _ 8 8 0 0 0 7 9 2 DE lflES40ea O O O O T T S b flfl NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type Polarity lcMax Amps VCECKSUS) Volts Package Type Polarity . ^ 33^77 lc Max Amps VCEO(SUS)


    OCR Scan
    fles40earr33t772n28122n2813+162n28142n28152n28162n28172n28182n2819npn 200 volts 20 amps power transistor2n30212n32232n3589npn 20 amps power transistor to63mt27npn 90 amps power transistor to632n30252nxxxxto63 package PDF

    2NS404

    Abstract: Transistors 2n551 2N1018 2N1478 2N1620 2N551 2N2951 2N3920 2N3444 2N2204
    Contextual Info: jo m itr o n ic r discrete devices s e m ic o n d u c t o r s S em itronics Corp. silicon transistors cont'd silicon power transistors Power Dissipation @ 25°C Watts h FE @ lc BVc e (volts) (°C) BVcbo (volts) fC) |A) (Cl (Al (C) 150 200 150 200 150 55


    OCR Scan
    2n3382n339a2n3402n340a+162n3412n341a2n3422n342a2n3432n343a2ns404transistors 2n5512n10182n14782n16202n5512n29512n39202n34442n2204 PDF