TO53 Search Results

2N1015

Abstract: 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B
Contextual Info: POWER TRANSISTORS *•* PT TYPE NO. TO-82 m MAXIMUM RATINGS 25*C BVcbo BVctt» BVebo le V V V A Watts hft MIN MÀX le A * Va V _ Sat Test Voltages Conditions le fa I ebo Va V« V A ma V A 2N1015 150 30 30 25 7.5 10 2 4 1.5 2 2 .3 20 2N1015A 150 60 60 25 7.5

2N424

Abstract: 2N1722 2N389 to-53 2N389A 2N5067 2N5068 2N5630 2N5631 2N5632
Contextual Info: POWER TRANSISTORS PT TYPE NO. MAXIMUM RATINGS @ 25°C BVcbo BVcto BVebo Ic Watts V V V A hre @ MIN MAX Ic A Va V Sat Voltages V a V« V V Test Conditions Ib Ic I ebo A A ma 2N5067 88 40 40 5 5 20 80 1 2 .4 1.2 1.0 .1 1 2N5068 88 60 60 5 5 20 80 1 2 .4 1.2

Contextual Info: POWER DARLINGTONS TYPE NO. PT MAXIMUM RATINGS @ 25'C BV cbo B V ceo BVebo Ic V V Watts V A Ic VCE A V Sat Test Voltages Conditions VCE Ib V be Ic I ebo V V A A ma hFE MIN MAX 2N2226 150 50 50 15 10 250 2000 4 6 3.5 4 9 .15 30 2N2227 150 100 100 15 10 250 2000 4

Contextual Info: The documentation and process conversion measures necessary to comply with this revision shall be completed by 6 March 2013. INCH-POUND MIL-PRF-19500/262G 6 December 2013 SUPERSEDING MIL-S-19500/262F 19 February 1969 PERFORMANCE SPECIFICATION SHEET SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, HIGH-POWER

SW-355

Abstract: BC 584
Contextual Info: H/A-COM/ MICROELECTRONICS bTE » • SbME103 Q0ÛD7D1 7TD «I1ACO GaAs DPDT Switch DC-2 GHz SW-355 TO-5-3 Features • Fast Switching Speed, 10 ns Typical • Ultra Low DC Power Consumption • Low Insertion Loss Guaranteed Specifications1 -55°ct0+85°o

SW203

Abstract: TO53 to-53 SW201
Contextual Info: GaAs SPDT Switch DC-2 GHz SW-201/203 ● ● ● V 2.00 TO-5-3 Features Fast Switching Speed, 6 ns Typical Ultra Low DC Power Consumption Low Loss SW-201 , Terminated (SW-203) Guaranteed Specifications * (From -55°C to +85°C) Frequency Range Model Number

BMH161

Abstract: F57518 F57515 TO8 package
Contextual Info: VOLTAGE CONTROLLED OSCILLATORS Thin film VOLTAGE CONTROLLED OSCILLATORS THIN FILM F57, TO5 & TF5 SERIES Features Operating characteristics • Frequency range: 100 to 5600 MHz • Hermetic package • Temperature range: - 40 to + 100° C Applications Ordering information

LB 11899

Abstract: DS21352 DS21352L DS21352LN DS21552 DS21552L DS21552LN TR54016 TCS 4199
Contextual Info: 3.3V DS21352 and 5V DS21552 T1 Single Chip Transceivers SCT www.dalsemi.com FEATURES § § § § § § § § § § § § § § § § Complete DS1/ISDN–PRI/J1 transceiver functionality Long and Short haul LIU Crystal–less jitter attenuator Generates DSX–1 and CSU line build outs

2N3017

Contextual Info: SILICON NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type 2N2812 2N2813 2N2814 2N2815 2N2816 2N2817 2N2818 2N2819 2N2821 2N2822 2N2823 2N2824 2N2825 2N2858 2N2859 2N2877 2N2878 2N2879 2N2880 2N2881 2N2882 2N2892 2N2893 2N2911 2N2983 2N2984

CX486

Abstract: 83C206 82C596 386D taga7 cyrix DX2 Cyrix 486 dx2 OT502 BIOS source code 386 3118D
Contextual Info: p yp: v « *1 X X PRELIMINARY CY82C597 - 386/486 Green Chip Set Features • 60-Pin single chip PQFP • Supports PC/AT compatible systems at 25/33/40/50 • Supports AMD, Cyrix level 1 w rite-back CPU • W rite-Back/W rite-Through cache with 32KB/64KB/128KB/256KB/512KB/1 MB cache size

SW-203

Abstract: SW203
Contextual Info: 1* •1 MODELS SW-201 /203 GaAs SPDT SWITCH DC-3 GHz Fast Switching Speed, 6ns Typical Ultra Low DC Power Consumption Low Loss SW-201 , Terminated (SW-203) Guaranteed Specifications * (From - 5 5 ° C to + 8 5 ° C ) Frequency Range Model Number Insertion Loss

2n1478

Abstract: 2N2204 2N3916 2N1899 2N2202 2N4244 2N1018 2N2951 to-53 2N1886
Contextual Info: jo m itr o n ic r discrete devices s e m ic o n d u c t o r s S em itronics Corp. silicon transistors cont'd silicon power transistors Power Dissipation @ 2 5°C W atts h FE @ lc BVc e (volts) (°C ) BVcbo (volts) fC) |A) (Cl (Al (C) 150 200 150 200 150

40411 transistor

Abstract: transistor 40411 TO-59 Package npn 40411 sdn6253 2N6571 SDN6251 2NXXXX MJ480 jedec Package TO-39
Contextual Info: 880 0 0 79 8 8 2 5 4 0 2 2 S IL IC O N TRANSISTOR CORP. NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued flö Polarity lc Max Amps 2N6465 2N6466 2N6468 2N6469 2N6470 NPN NPN PNP PNP NPN 4.0 4.0 4.0 15.0 15.0 110 130 130 50 50 TO-66 TO-66 TO-66

2SB5950

Abstract: B0540C to-53 2SB595-0 B0242c 2N3186 2N3198
Contextual Info: POWER SILICON PNP Item Number Part Number I C} 5 -10 20 2SB1270 2SB9200 2SA1293 2N5005 2N5153 2N5153S 2N5609 2N5617 See Index NthAmerSemi Semelab SGS-Ates NthAmerSemi NEC Corp JA See Index Matsushita Matsushita Matsushita ~emel~ ToshibaCorp Sanyo Elect Sanyo Elect

2N1620

Abstract: 2N1211 N5069 2N1886 2N2032 2N5631 JANTX 2N389 2N389A 2N5067 2N5068
Contextual Info: POWER TRANSISTORS PT TYPE NO. MAXIMUM RATINGS @ 25°C BVcbo BVcto BVebo Ic Watts V V V A hre @ MIN MAX Ic A Va V Sat Voltages V a V« V V Test Conditions Ib Ic I ebo A A ma 2N5067 88 40 40 5 5 20 80 1 2 .4 1.2 1.0 .1 1 2N5068 88 60 60 5 5 20 80 1 2 .4 1.2

2N1212

Abstract: 2N2101 2N1208 to-53 transistor 2n1208 2N1209 2N1616 2N1616A 2N1617 2N1617A
Contextual Info: POWER TRANSISTORS Sat Test Voltages Conditions « ! » a r a i * 7 7 * hTM msm mrm l i r a y v V A A A ma FT TYPE NO. 2N1047 TO-57 , MAXIMUM RATINGS <feCm* • i-i’n o i A w & ? V •• y " V 80 6 40 80 .5 h* . mW 12 36 .5 10 7.5 6.0 .5 .250 2N1048 40 120

TM 1343 transformer

Abstract: eel 19-b KAE V2 Pulse Transformer for electric fence RLink arm jtag DS21352 DS21352L DS21352LN DS2152 DS21552
Contextual Info: PRELIMINARY 3.3V DS21352 and 5V DS21552 T1 Single Chip Transceivers SCT DALLAS SEMICONDUCTOR FEATURES • • • • • • • • • • • • • • • • • Complete DS1/ISDN-PRI/J1 transceiver functionality Long and Short haul LIU Crystal-less jitter attenuator

B0933

Abstract: 2SC7900 2SD234Y 2S0234 2sc3386 2S0255 B0241A b0131 5000N 2S0234Y
Contextual Info: POWER SILICON NPN Item Number Part Number I C 5 10 - 15 20 25 30 35 40 45 -50 55 60 65 70 75 80 -85 -90 >= -2~ 2S0130 2S0130R 2N3507 KT817B 2SC10S0 2SC10S1 2SC830 2S0234G 2S0234 2S0234R 100234 2S0234G-R 2S0130Y 2S02340 2S0234G-0 2S0130BL 2SC3386 2SC338SL

BC177 NPN transistor

Abstract: BC377 2S026 transistor 200mhz 100w 2n930 TRANSISTOR bc177b IC202 to-53
Contextual Info: Search Results Part number search for devices beginning "2N918A" Datasheets are downloaded as Acrobat PDF files. Semelab Home Bipolar Products PRODUCT Polarity Package VCEO IC cont HFE(min) HFE(max) @ VCE/IC FT PD 2N918ACSM NPN LCC1 15V 0.003A 20 - 1/3m 600MHz

Contextual Info: Biffi PRODUCT PACKAGING SPECIFICATIONS PACKAGING OF AXIAL LEAD DIODES, SURFACE MOUNT DEVICES AND TRANSISTORS TAPE AND REEL PACKAGING OUTLINE itflfJf "‘MMölWn|}ä;>:i;’î COMPONENT SPACE each 5KP 10.0 52.4 320 500 5W 5.0 52.4 320 3,000 178/330 3,000/10,000

Contextual Info: O K I Semiconductor MSC2321 B-xxYSI 8/DS18 524,288-Word by 36-Bit DRAM Module: Fast Page Mode DESCRIPTION The O KI M SC 2321B-xxY S18/D S18 is a fully decoded 524,288-w ord x 36-bit CM OS Dynamic Random Access M em ory M odule composed of sixteen 1-Mb DRAM s in SOJ MSM514256B packages and eight

la 4440 amplifier circuit diagram 300 watt

Abstract: la 4440 amplifier circuit diagram 300 watt diode LT 7229 2sd323 YM 7137 3D DA 3807 pdf transistor inverter welder 4 schematic 2N5630 THYRISTOR br 403 1N3492
Contextual Info: Alphanumeric Index Power Transistor Selector Guide Power Transistor Cross Reference Power Transistor Data Sheets Thyristor Selector Guide Thyristor Cross Reference Thyristor Data Sheets Leadforms, Hardware, and Mounting Techniques R ectifier and Zener Diode

2n2301

Abstract: 2N4001 diode d880 2N3051 2N2B31 2N125 Ti D880 NPN 2N70j transistor d880 2N1815
Contextual Info: . GENERAL DIODE CORP d T J 3 f l b T 72 0 Sb GD OOB D 4 ö | 7 - - 2-*? ~ D SILICON P L A N A R TRANSISTO RS — S M A L L SIG N A L VI TYPE 2N72» 2N727 2N8E9 2N869A 2N92S 300 •300 360 360 300 2N929A 2N930 2N930A 2N1S72 2N1573 NPN NPN NPN NPN NPN • 2N1S74

SPC-401

Abstract: SPC-402 SPC-410 SPC-411 SPC-413 SPC-423 SPC-425
Contextual Info: HIGH VOLTAGE TRANSISTORS Ff TYPE NO. SPC-401 SPC-402 SPC-410 ¿PC-411 ¿PC-413 ¿PC-423 ¿Pt-423/V S^C-424 SPC-425 ! !IIIB 1 k <1 # 1 Vero it Vôo too V « fcrt fc 25*C MAX S us MA WÎN MAX V MA y MA V*ttj A i V m 100 100 80 100 75 100 100 1ÔÔ 100 2.0 3.5