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2N6468 Datasheets (15)

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Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2N6468	Central Semiconductor	Leaded Power Transistor General Purpose - Pol=PNP / Pkg=TO66 / Vceo=130 / Ic=4 / Hfe=15-150 / fT(Hz)=5M / Pwr(W)=23	Original	PDF	50.39KB	1
2N6468	Semelab	Bipolar PNP Device in a Hermetically Sealed TO66 Metal Package - Pol=PNP / Pkg=TO66 / Vceo=130 / Ic=4 / Hfe=15-150 / fT(Hz)=5M / Pwr(W)=23	Original	PDF	10.62KB	1
2N6468	API Electronics	Short form transistor data	Short Form	PDF	91.91KB	1
2N6468	General Electric	Silicon P-N-P medium-power transistor. -130V, 40W. - Pol=PNP / Pkg=TO66 / Vceo=130 / Ic=4 / Hfe=15-150 / fT(Hz)=5M / Pwr(W)=23	Scan	PDF	185.16KB	4
2N6468	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF	44.48KB	1
2N6468	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF	116.58KB	1
2N6468	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF	90.02KB	1
2N6468	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	82.21KB	1
2N6468	Unknown	Basic Transistor and Cross Reference Specification	Scan	PDF	56.14KB	1
2N6468	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	166.41KB	1
2N6468	Unknown	Transistor Replacements	Scan	PDF	86.57KB	1
2N6468	Unknown	Historical semiconductor price guide (US$ - 1998). From our catalog scanning project.	Historical	PDF	33.99KB	1
2N6468	Unknown	Shortform IC and Component Datasheets (Plus Cross Reference Data)	Short Form	PDF	92.13KB	1
2N6468	PPC Products	Transistor Short Form Data	Scan	PDF	202.26KB	1

2N6468	RCA Solid State	Power Transistor Directory 1976	Scan	PDF	53.2KB	1

2N6468 Price and Stock

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Central Semiconductor Corp


Central Semiconductor Corp 2N6468 TIN/LEAD Transistor GP BJT PNP 120V 2-Pin TO-66 Sleeve (Alt: 2N6468 TIN/LEAD)
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2N6468 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
2N6465 Abstract: npn 100v 1.5a 2N6466 2N6467 2N6468 2N646 v130100 Contextual Info: Inchange Semiconductor Product Specification 2N6465 2N6466 Silicon NPN Power Transistors DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Complement to type 2N6467 2N6468 APPLICATIONS ・For use in audio amplifier applications PINNING see Fig.2	Original	2n6465 2n6466 2n6467 2n6468 +3npn 100v 1.5a 2n646 v130100	PDF
40411 transistor Abstract: transistor 40411 TO-59 Package npn 40411 sdn6253 2N6571 SDN6251 2NXXXX MJ480 jedec Package TO-39 Contextual Info: 880 0 0 79 8 8 2 5 4 0 2 2 S IL IC O N TRANSISTOR CORP. NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued flö Polarity lc Max Amps 2N6465 2N6466 2N6468 2N6469 2N6470 NPN NPN PNP PNP NPN 4.0 4.0 4.0 15.0 15.0 110 130 130 50 50 TO-66 TO-66 TO-66	OCR Scan	2n6465 2n6466 2n6468 2n6469 +162n6470 2n6471 2n6472 2n6495 2n6496 2n6500 40411 transistor transistor 40411 to-59 package npn 40411 sdn6253 2n6571 sdn6251 2nxxxx mj480 jedec package to-39	PDF
2N6468 Contextual Info: 2N6468 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a	Original	2n6468 o213aa 1-aug-02	PDF
2N6468 Abstract: TA8709 Contextual Info: File N um ber HARRIS 888 SENICOND 2N6467, 2N6468 SECTOR SLE T> Silicon P-N-P Medium-Power Transistors 4302571 0 0 4 0 S57 M'ÎS M Ê H A S TERMINAL DESIGNATIONS General-Purpose Types for Switching Application Features: • Low saturation voltages ■ Maximum-safe-area-of-operation curves	OCR Scan	2n6467 2n6468 o-213aa ta8710 +1ta8709	PDF
2N6465 Abstract: 2N6467 2N6466 2N6468 Contextual Info: SavantIC Semiconductor Product Specification 2N6465 2N6466 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·Excellent safe operating area ·Complement to type 2N6467 2N6468 APPLICATIONS ·For use in audio amplifier applications PINNING see Fig.2	Original	2n6465 2n6466 2n6467 2n6468	PDF
LB 11911 Abstract: 1SS99 TA8709 ta8710 C984 Z-636 2N6467 2N6468 T0-213AA TO213AA Contextual Info: _ QÎ 3875081 G E SOLID STATE dT 01E , • File N um b er \|3 ö 7S0 ö 1 17441 D 0017441 1 ~ S '? General-Purpose Power Transistors 388 2N6467, 2N6468 Silicon P-N-P « Medium-Power Transistors	OCR Scan	2n6467 2n6468 t0-213aa rca-2n6467 +92n6468aare o-213aa ta8710 ta8709 lb 11911 1ss99 c984 z-636 to213aa	PDF
2N6465 Abstract: 2N6467 2N6466 2N6468 Contextual Info: Inchange Semiconductor Product Specification 2N6467 2N6468 Silicon PNP Power Transistors DESCRIPTION ・With TO-66 package ・Excellent safe operating area ・Complement to type 2N6465 2N6466 APPLICATIONS ・For use in audio amplifier applications PINNING see Fig.2	Original	2n6467 2n6468 2n6465 2n6466 +1-130v	PDF
b0944 Abstract: b0946 SM2177 RCA1C13 rca1c04 to-53 2n3191 2SA1120 Motorola 2N6297 2N3183 Contextual Info: POWER SILICON PNP Item Part Number Number I C 5 10 - >= 20 2S81095M MJE253 2S8860 RCA1C04 2S81095L 2S81168 2S81216 2S81095K ~~~~~ 25 30 RCA1C13 SK3626 2N6468 2N6476 SM2177 NA62U NA62W 80S18 BDS19 I(C) 35 40 50 2SA1357Y 80944 B0944 B0944F MJD210 MJD21 0-1	Original	mje703t 2n6297 2s81102 2s8908 +14s1237 mje254 ot3729 ot3757 b0944 b0946 sm2177 rca1c13 rca1c04 to-53 2n3191 2sa1120 motorola 2n6297 2n3183	PDF
Contextual Info: 2N6468 Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar PNP Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar PNP Device in a	Original	2n6468 o213aa 30-jul-02	PDF
Contextual Info: 2N6468 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)120 V(BR)CBO (V)130 I(C) Max. (A)4.0 Absolute Max. Power Diss. (W)23 Maximum Operating Temp (øC)200õ I(CBO) Max. (A)1.0m° @V(CBO) (V) (Test Condition)60 V(CE)sat Max. (V)4.0 @I(C) (A) (Test Condition)4.0	Original	2n6468	PDF
2N6467 Abstract: 2N6465 2N6468 2N6466 Contextual Info: SavantIC Semiconductor Product Specification 2N6467 2N6468 Silicon PNP Power Transistors DESCRIPTION •With TO-66 package ·Excellent safe operating area ·Complement to type 2N6465 2N6466 APPLICATIONS ·For use in audio amplifier applications PINNING see Fig.2	Original	2n6467 2n6468 2n6465 2n6466 +2-110v -130v	PDF
92CS-2GS66 Abstract: P6019 TA8709 2N6467 Contextual Info: File N u m be r 2N6467, 2N6468 888 Silicon P-N-P Medium-Power Transistors TERMINAL DESIGNATIONS F L A N G E ! G eneral-Purpose Types for Sw itching Application Features: • Low saturation voltages ■ M axim um -safe-area-of-operation curves JEDEC TO-213AA	OCR Scan	2n6467 2n6468 o-213aa ta8710 +4ta8709 92cs-26969 92cs-2gs66 p6019	PDF
Contextual Info: I SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeNo 2N6423 2N6424 2N6425 2N6425A 2N6436 2N6437 2N6438 2N6448 2N6461 2N6462 2N6463 2N6464 2N6465 2N6466 2N6467 2N6468 2N6469 2N6496 2N6500 2N6511 2N6512 2N6513 2N6514 2N6534 2N6535 2N6536 2N6537 2N6542	OCR Scan	2n6423 2n6424 2n6425 2n6425a +62n6436 2n6437 2n6438 2n6448 2n6461 2n6462	PDF
2N5415 Abstract: 2N3055 RCA 2N3054 transistor BUX66C rca 2n3055 RCA 40250 2N3439 2N3440 rca transistor 508 2N6079 Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . . f r to 2 0 M H z . . . P y to 1 7 5 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N]	OCR Scan	tq-66 42x42 130x130 2n6177 +122n3439 2n5415 2n358s 2n6213 2n6079 2n3055 rca 2n3054 transistor bux66c rca 2n3055 rca 40250 2n3440 rca transistor 508	PDF

TRIAC 97A6 Abstract: S0805BH 13003 TRANSISTOR TO220 equivalent triacs bt 804 600v Triac bt 808 600C Diode SOT-23 marking 15d zener diode 1N PH 48 6Bs smd transistor Z0409MF equivalent BT 808 600C Contextual Info: Central Semiconductor Corp. Represented iSIGNTBOHICS B y: TORONTO I Regan Road, Unit 13, Bram pton, O ntario L7A 1B8 Tel: 905-846-1100 Fax:905-846-7116 E -m a il: d e s ig n tr< a id ire c t.c o m OTTAW A 21 Pine Bluff Trail, Stittsville, O ntario K2S 1E1	OCR Scan	od-80 od-323 ot-23 ot-89 +13ot-143 ot-223 ot-323 triac 97a6 s0805bh 13003 transistor to220 equivalent triacs bt 804 600v triac bt 808 600c diode sot-23 marking 15d zener diode 1n ph 48 6bs smd transistor z0409mf equivalent bt 808 600c	PDF
2N5657 equivalent Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.	Original	2n5655 2n5656 2n5657 tip73b +14tip74 tip74a tip74b tip75 tip75a tip75b 2n5657 equivalent 2sa1046 bu326 bu108 bu100 2sc2331 y tip47 419 2n3792 application notes	PDF
MJE494 Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS	Original	bd157 bd158 bd159 tip73b +16tip74 tip74a tip74b tip75 tip75a tip75b mje494 2sc1419 bd 804 2sd675 mje104 bd581 bd135 curves mj1000 dts-4041 2n5037	PDF
2SD669 equivalent Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc	Original	2n6609 2n3773 2n6667 2n6668 +13220ab 2n6387 2n6388 2sd669 equivalent bd801 bdy29 equivalent bu108 2sc2080 2sd436 2n6021 bd345 tip122 d-pak package 2sd544	PDF
2SC495 Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink	Original	mjf6107 2n6107 e69369 tip73b +16tip74 tip74a tip74b tip75 tip75a tip75b 2sc495 nsp41a bu108 transistor bd614 motorola 2sa663 bd4122 bd661 mj1000 nsp2100 d45vh4 similar	PDF
"Tektronix 475" Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,	Original	48/bux bux48 bux48a ampere32 +16tip73b tip74 tip74a tip74b tip75 tip75a tektronix 475 equivalent 2n6488 tip42c equivalent bu108 motorola darlington power transistor motorola 266 to-204aa transistor d45h11 equivalent replacement pnp bux transistor replacement table for transistor tip3055 equivalent	PDF
D42C5 Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is	Original	mje16204 tip73b tip74 tip74a +15tip74b tip75 tip75a tip75b tip75c d42c5 transistor bc 647 2n5302 eb pin out transistor tip2955 bs170 replacement 2sc141 bu108 bc 658 motorola transistors mje3055 to 127 mc7812 to-220	PDF
mje521 equivalent Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry	Original	mje521 mje371 tip73b tip74 +16tip74a tip74b tip75 tip75a tip75b tip75c mje521 equivalent bu108 2n3055 plastic 2n6488 motorola motorola transistors mje3055 to 127 3904 transistor bdx54 tip122 tip127 audio amp bu326 bu100	PDF
2N3055 Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64 Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes	Original	mje2955t mje3055t tip73b tip74 +16tip74a tip74b tip75 tip75a tip75b tip75c 2n3055 bu108 an415a mje2955t st bdx54 2n3055 audio amplifier application note bu326 bu100 mje13005 bdv64	PDF
2N5631 equivalent Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —	Original	2n5630 2n6030 2n5631 2n6031 +102n5631 equivalent 2n5630 "cross-reference chomerics bu108 2sa1046 tip122 tip127 audio amp bu326 bu100 2sd313 equivalent npn/tip42c as regulator	PDF

2N6468 Search Results

2N6468 Datasheets (15)

2N6468 Price and Stock

Central Semiconductor Corp 2N6468 TIN/LEAD

2N6468 Datasheets Context Search

2N6465

40411 transistor

2N6468

2N6468

2N6465

LB 11911

2N6465

b0944

2N6467

92CS-2GS66

2N5415

TRIAC 97A6

2N5657 equivalent

MJE494

2SD669 equivalent

2SC495

"Tektronix 475"

D42C5

mje521 equivalent

2N3055

2N5631 equivalent