2N6514 Search Results

2n6514

Contextual Info: ISCFdÈ¿Ö – ¿Ö – text/html About News Contact keyword search: Employment Site Home part number search: 2N6514 #23592 RFQ/Sample Package NPN Transistor Division Lawrence Datasheet (none) Mil-Spec Shipping (none) (none) Qual Data Contact Microsemi

2N6510

Abstract: 2N6513 2n6512 2N6511 2NG510 2N6514
Contextual Info: 2N6510 2N6511 2N6512 2N6513 2N6514 POWER TRANSISTORS 7 Amp, 400V, Triple Diffused NPN Mesa FEATURES • Collector-Base Voltage: up to 400V • Peak C ollector Current: 10A • Rise Time: < 1.5/js > • Fall Time: < 1.5ms \ lc = 4A DESCRIPTION These high voltage trip le diffused glass

2N6514

Contextual Info: 2N6514 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

2N6531B

Abstract: 2N660 2N6587 2N6558S 2N6584
Contextual Info: r S E ME L AB 37E LTD IVIELABil Type No. 2N6497 2N6498 2N6499 2N6500 • 2N6511 2N6512 2N6513 2N6514 2N6531B 2N6532 op tion "1^ Polarlty HI-REL SCREEN SCREEN SCREEN SCREEN NPN NPN NPN NPN NPN Packa3e VCEO •c cont J> m V' 'Xg. - 6133167 □ □ 0 D D E ci 4

2N6514

Contextual Info: SavantIC Semiconductor Product Specification 2N6514 Silicon NPN Power Transistors DESCRIPTION •With TO-3 package ·High breakdown voltage ·Low collector saturation voltage APPLICATIONS ·For use in switching power supply applications and other inductive

Contextual Info: 2N6514 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

Contextual Info: 2N6514 Dimensions in mm inches . 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177) 30.4 (1.197) 38.61 (1.52) 39.12 (1.54) 10.67 (0.42) 11.18 (0.44)

Contextual Info: Microsemi NPN Transistors Part Number NPN 2N3491 2N3489 2N3492 2N5854 2N7368 2N5622 2N5624 2N5626 2N5288 2N5289 2N5628 2N1724 2N6128 2N6S10 2N6511 2N6512 2N6514 2N6513 2N5241 2N6544 2N1902 2N1904 2N6S61 2N6S82 2N6584 2N6S85 2N6588 2N6580 2N6583 2N6586 2N6S89

Contextual Info: I SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeNo 2N6423 2N6424 2N6425 2N6425A 2N6436 2N6437 2N6438 2N6448 2N6461 2N6462 2N6463 2N6464 2N6465 2N6466 2N6467 2N6468 2N6469 2N6496 2N6500 2N6511 2N6512 2N6513 2N6514 2N6534 2N6535 2N6536 2N6537 2N6542

IC 8030

Abstract: 2N6575 10J2 25010 2N6258 2N6580 2N6583 30014 lg 505 2N6249
Contextual Info: NEU ENGLAND SEMICONDUCTOR 51E I m b i b u l a D000tl5b 20? « N E S -7- - 3 & = 2-50 A V ceo sus = 3 5 -50 0 V fi = 0 .2 -5 0 MHz Type No. RNP Comple­ ment VCEO (SUS) (V) Case 8 03 Case 8 0 4 Ic (A) hFE @ IC/VCE {min-max @ A/V) (MAX) -0 / INIPIM T O - 3

Contextual Info: General Transistor Corporation CASE le MAX V c e o (SUS) = = TO-3 2-50A 35-500V NPN Power Transistors PNP VCEO (WS) 1C (max) M (A) hFE@ic/Vc* (min-max @ A/V) 40 55 40 55 6 6 6 6 15-45 0 1.5/4 15*4501.5/4 25-75 0 1.5/4 25-75 @1.5/4 40 60 140 60 80 5 15 10

RCA 40872

Abstract: rca 40872 transistor RCA 40595 transistor RCA 40594 transistor rca 40871 transistor 40872 rca rca 40636 RCA 40636 transistor RCA 40360 rca 40594
Contextual Info: MONOLITHIC DARLINGTON TYPES HERM ETIC lc • 8 A max. P j - 3 6 W max. T O -66 138 x 136 lc > 8 A max. P f “ 90 W max. (TO-31 136 x 136 PLASTIC l t z 8 A max. Py 100 W max. (TO-3) lc * 10 A max. Py ■ 100 W max. (TO-3) lc •= - 1 0 A max. PT - 100 W max.

RCA 40636 transistor

Abstract: rca 40636 rca 2N3771 power circuit 40636 rca rca 40327 300W TRANSISTOR AUDIO AMPLIFIER 40636 220v 300w ac regulator circuit 2N3055 RCA 40327
Contextual Info: Ic to 80 A . . . P t to 300 W . . . V cE to 170 V H O M ETAXIAL-BASE N-P-N POWER TYPES le - 16 A max. •260 W max. <e “ 1.6 A max. le a 1 . S A max. lc » 3 .S A max. lc * 4 A m ax. lc a 4 A max. le • 3 A max. le “ 3 A max. le - 7 A max. lc a 1 S A max.

2n5863

Abstract: MJ2965 TO61 package 12J5 2N8307 2n3713 2N4901 2n3447
Contextual Info: GENERAL TRANSISTOR CÔRP 54E D • 3=120001 OOOOObl 5 General Transistor Corporation CASE T -3 3 -0 1 216 WEST FLORENCE AVENUE INGLEWOOD, CALIFORNIA 90301 213 673-8422 • Telex 65-3474 • FAX (213) 672-2905 T O -3 Ic(M A X ) a 2 - 5 0 A y\A^EO(sus) : ~ ^ 5 - 5 0 0 V

Ultrasonic amplifier 50w

Abstract: 2n377 2n3773 power Amplifier BDY29 BDY37 2N1482 2N3054 2N344 2N5298 2N5786
Contextual Info: Ic to 80 A . . . Pt to 300 W . . . VcE to 170 V HOMETAXIAL-BASE N-P-N POWER TYPES le - 1 6 A m a x . • 26 0 W m ax. <e “ 1 .6 A m a x. le a 1 . S A m ax . l c » 3.S A m ax . lc * 4 A m a x . lc a 4 A m ax. le • 3 A m ax. le “ 3 A m ax. le - 7 A m ax.

RCA 40874

Abstract: 2N6175 2N3055 specification 2N6179 2N6474 JAN 2n3055 pnp transistor 2N6175 rca 2n1485 2N5296 RCA rca Transistors 4a 322
Contextual Info: H I G H - V O L T A G E N -P -N & P -N -P P O W E R T Y P E S 1C to 30 A . . f r to 20 M Hz . . . Py to 175 W Ic * 1 A max. P y “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. jTO-39»* lc > - 1 A max. P y - 10 W max. (TO-39 * 4 2 x4 2 4 2 x4 2

rca8203a

Abstract: RCA8350B 2N6534 2N6055 2N6056 2N6337 2N6383 2N6385 2N6535 2N6536
Contextual Info: MONOLITHIC DARLINGTON TYPES H E R M E T IC lc • 8 A max. P j - 3 6 W max. T O -66 138 x 136 lc > 8 A max. P f “ 90 W max. (TO-31 136 x 136 P L A S T IC 1 = 10A max. c PT = 70W max. l = 10 A mox. c P^ = 70W max. VERSAWATT (T 0 -2 2 0 ) VERSAWATT (T O -220)

2N3055 RCA

Abstract: rca413 RCA411 2N3440 rca rca 2n3055 rca 41013 2N5415 2N3772 RCA BUX 64 2N3439
Contextual Info: HIGH-VOLTAGE N-P-N & P-N-P POWER TYPES 1C to 30 A . . f r to 20 M Hz . . . Py to 175 W Ic * 1 A max. Py “ 20 W max. Plástic TO-5Í 32 x lt > 1 A max. Pt - 10 W max. 32a jTO-39»* lc > - 1 A max. Py - 10 W max. (T O -39 * 42x42 42x42 2N3439 [N-P-N] 2N5415

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

40411 transistor

Abstract: transistor 40411 TO-59 Package npn 40411 sdn6253 2N6571 SDN6251 2NXXXX MJ480 jedec Package TO-39
Contextual Info: 880 0 0 79 8 8 2 5 4 0 2 2 S IL IC O N TRANSISTOR CORP. NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued flö Polarity lc Max Amps 2N6465 2N6466 2N6468 2N6469 2N6470 NPN NPN PNP PNP NPN 4.0 4.0 4.0 15.0 15.0 110 130 130 50 50 TO-66 TO-66 TO-66

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink