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    2N6437 Search Results

    2N6437 Datasheets (31)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    2N6437
    Motorola 25A POWER TRANSISTOR PNP SILICON 100V 200W Original PDF 180.99KB 6
    2N6437
    On Semiconductor High-Power PNP Silicon Transistor Original PDF 72.81KB 8
    2N6437
    Semelab High Power PNP Silicon Transistors - Pol=PNP / Pkg=TO3 / Vceo=100 / Ic=25 / Hfe=20-80 / fT(Hz)=40M / Pwr(W)=200 Original PDF 35.02KB 2
    2N6437
    Boca Semiconductor HIGH-POWER PNP SILICON TRANSISTORS - Pol=PNP / Pkg=TO3 / Vceo=100 / Ic=25 / Hfe=20-80 / fT(Hz)=40M / Pwr(W)=200 Scan PDF 201.17KB 4
    2N6437
    General Transistor Power Transistor Selection Guide Scan PDF 401.54KB 5
    2N6437
    Mospec POWER TRANSISTORS(25A,200W) - Pol=PNP / Pkg=TO3 / Vceo=100 / Ic=25 / Hfe=20-80 / fT(Hz)=40M / Pwr(W)=200 Scan PDF 195.9KB 4
    2N6437
    Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF 330.78KB 7
    2N6437
    Motorola European Master Selection Guide 1986 Scan PDF 57.68KB 1
    2N6437
    Motorola Power Transistor Selection Guide Scan PDF 325.11KB 6
    2N6437
    Unknown Transistor Shortform Datasheet & Cross References Scan PDF 82.21KB 1
    2N6437
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 157.6KB 1
    2N6437
    Unknown Shortform Transistor PDF Datasheet Short Form PDF 164.97KB 1
    2N6437
    Unknown Transistor Replacements Scan PDF 86.57KB 1
    2N6437
    Unknown Shortform IC and Component Datasheets (Plus Cross Reference Data) Short Form PDF 92.13KB 1
    2N6437
    Unknown Semiconductor Master Cross Reference Guide Scan PDF 116.58KB 1
    2N6437
    Unknown Shortform Transistor Datasheet Guide Short Form PDF 90.02KB 1
    2N6437
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 35.5KB 1
    2N6437
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 35.5KB 1
    2N6437
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 35.5KB 1
    2N6437
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 35.5KB 1
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    2N6437 Price and Stock

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    VPT Components JANTX2N6437

    - Bulk (Alt: JANTX2N6437)
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    Microchip Technology Inc 2N6437

    Transistor GP BJT PNP 100V 25A 200W 3-Pin TO-3 - Bulk (Alt: 2N6437)
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    Onlinecomponents.com 2N6437
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    Master Electronics 2N6437
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    VPT Components JANTXV2N6437

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    Microchip Technology Inc JANTV2N6437

    Transistor BJT PNP 100V 25A TO-3 - Bulk (Alt: JANTV2N6437)
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    VPT Components JAN2N6437

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    2N6437 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    2N6437

    Abstract: 2N6339 2N6341 2N6438
    Contextual Info: ON Semiconductort 2N6437 2N6438 * High-Power PNP Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. *ON Semiconductor Preferred Device • High Collector–Emitter Sustaining Voltage —


    Original
    2n64372n64382n63392n6341+3204aar145252n6437/d PDF

    High voltage fast switching power transistor pnp

    Abstract: 2N6438 2n6437
    Contextual Info: MOTOROLA Order this document by 2N6437/D SEMICONDUCTOR TECHNICAL DATA 2N6437 2N6438* High-Pow er PNP Silicon Transistors . . . designed for use in industrial-military power amplifier and switching circuit applications. • High Collector-Emitter Sustaining Voltage —


    OCR Scan
    2n6437/d2n64372n64382n6339+22n6341high voltage fast switching power transistor pnp PDF

    Contextual Info: MOTOROLA Order this document by 2N6437/D SEMICONDUCTOR TECHNICAL DATA 2N6437 2N 6438* High-Power PNP Silicon Transistors . . . designed for use in in d u s tria l-m ilita ry power am plifier and sw itching circuit applications. • • • • • High C ollector-Em itter Sustaining Voltage —


    OCR Scan
    2n6437/d2n64372n64382n6339+22n6341o-204aa PDF

    Contextual Info: 2N6437+JANTXV Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)25 Absolute Max. Power Diss. (W)200# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)120 V(CE)sat Max. (V)1.8 @I(C) (A) (Test Condition)25


    Original
    2n6437freq40mtime300n PDF

    2n6436

    Abstract: 2N6438
    Contextual Info: 2N6436 2N6437 2N6438 MECHANICAL DATA Dimensions in mm inches HIGH POWER PNP SILICON TRANSISTORS 8.51 (0.34) 9.40 (0.37) 7.75 (0.305) 8.51 (0.335) 6.10 (0.240) 6.60 (0.260) 12.70 (0.500) min. 0.89 max. (0.035) 0.41 (0.016) 0.53 (0.021) dia. DESCRIPTION 5.08 (0.200)


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    2n64362n64372n6438 PDF

    2N6436

    Abstract: 2N6437 2N6438
    Contextual Info: 2N6436 2N6437 2N6438 HIGH POWER PNP SILICON TRANSISTORS MECHANICAL DATA Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 1 1.52 (0.06) 3.43 (0.135) 2 22.23 (0.875) max. 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177)


    Original
    2n64362n64372n6438o-204aa PDF

    2N6436

    Abstract: 2N6437 2N6438 2N6338 2N6341
    Contextual Info: SavantIC Semiconductor Product Specification 2N6436 2N6437 2N6438 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·High DC current gain ·Fast switching times ·Low collector saturation voltage ·Complement to type 2N6338~2N6341 APPLICATIONS


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    2n64362n64372n64382n6338+12n6341 PDF

    23741

    Abstract: PPC 2n5683 JANTX2N6379 JANTX2N6437
    Contextual Info: Micmsemi PNP Transistors Part Number 2N6609 2N5879 2N5880 2N5678 2N5958 2N5960 2N6029 , 2N6030 2N6031 2N5745 2N5883 2N5884 2N6436 2N6437 2N6437 2N6437 2N6437 2N6436 JAN2N6438 JANTX2N6438 JANTXV2N6438 2N4398 2N4399 2N6329 2N6330 2N6331 2N5967


    OCR Scan
    pnp-1123741ppc 2n5683jantx2n6379+1jantx2n6437 PDF

    2N6437

    Abstract: 2N6438 2N6436 2n6438a 2N6338 2N6341 power transistors
    Contextual Info: Inchange Semiconductor Product Specification 2N6436 2N6437 2N6438 Silicon PNP Power Transistors DESCRIPTION ・With TO-3 package ・High DC current gain ・Fast switching times ・Low collector saturation voltage ・Complement to type 2N6338~2N6341 APPLICATIONS


    Original
    2n64362n64372n64382n6338+42n63412n643current2n6438apower transistors PDF

    Contextual Info: 2N6437 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)25 Absolute Max. Power Diss. (W)200# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)120 V(CE)sat Max. (V)1.8 @I(C) (A) (Test Condition)25


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    2n6437freq40mtime300n PDF

    Contextual Info: 2N6437+JANTX Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)25 Absolute Max. Power Diss. (W)200# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)120 V(CE)sat Max. (V)1.8 @I(C) (A) (Test Condition)25


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    2n6437freq40mtime300n PDF

    5005K

    Abstract: 2N6575 2N6587 2N65 2N6395 2N6534 2N6583 NPN 1K 2N6385 2N6394
    Contextual Info: 4flE D • Ö1331Ö7 0000444 SEMELABL 1TS ■ S M L B S E M E L A B LT3> 7^;.«/ HI-REL BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY Type Num ber Rei Code 2N6385 2N6394 2N6395 2N6408 2N6414 2N6420 2N6421 2N6422 2N6423 2N6424 2N6425 2N6436 2N6437


    OCR Scan
    2n6385lk-20k2n6394750-18k+122n63952n64082n64142n642010min5005k2n65752n65872n652n65342n6583npn 1k PDF

    Contextual Info: 2N6436 2N6437 2N6438 HIGH POWER PNP SILICON TRANSISTORS MECHANICAL DATA Dimensions in mm inches 25.15 (0.99) 26.67 (1.05) 6.35 (0.25) 9.15 (0.36) 2 22.23 (0.875) max. 1 1.52 (0.06) 3.43 (0.135) 0.97 (0.060) 1.10 (0.043) 16.64 (0.655) 17.15 (0.675) 29.9 (1.177)


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    2n64362n64372n6438o-204aa PDF

    power BJT pnp

    Abstract: JANS2N7373 NPN Power BJT 100v JANS2N5154 JANS2N5153 power transistor bjt 100 a 2N7395 smps 500 watt 500 WATT smps JANS2N7372
    Contextual Info: Fall 1998/Winter 1999 Bipolar Transistors in Space bipolar chip types that are MIL qualified in older TO-3’s and have a radiation tolerant structures, can be put in more reliable TO-254’s. Examples of this are the 2N6338 NPN and 2N6437(PNP) that are complementary 100V, 200W


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    1998/wintero-2542n63382n6437+15pp6338mpp6437m2500ma2n7272frl9130dpower bjt pnpjans2n7373npn power bjt 100vjans2n5154jans2n5153power transistor bjt 100 a2n7395smps 500 watt500 watt smpsjans2n7372 PDF

    2SC124

    Abstract: BU108 2SA1046 BDX54 2SC102 BC 458 BU326 BU100
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6436 2N6437 2N6438* High-Power PNP Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage — VCEO sus = 80 Vdc (Min) — 2N6436


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    2n64362n64372n64382n6338+112n6341devi32tip73b2sc124bu1082sa1046bdx542sc102bc 458bu326bu100 PDF

    2N6436

    Abstract: 2N6338 2N6341 2N6437 2N6438 MBR745 motorola mbr745
    Contextual Info: MOTOROLA Order this document by 2N6436/D SEMICONDUCTOR TECHNICAL DATA 2N6436 2N6437 2N6438* High-Power PNP Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. • High Collector–Emitter Sustaining Voltage —


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    2n6436/d2n64362n64372n6438+42n63382n6341mbr745motorola mbr745 PDF

    Contextual Info: 2N6437+JAN Transistors Si PNP Power BJT Military/High-RelY V BR CEO (V)100 V(BR)CBO (V)120 I(C) Max. (A)25 Absolute Max. Power Diss. (W)200# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)120 V(CE)sat Max. (V)1.8 @I(C) (A) (Test Condition)25


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    2n6437freq40mtime300n PDF

    Contextual Info: 2N6437 High−Power PNP Silicon Transistors High−power PNP silicon transistors are designed for use in industrial−military power amplifier and switching circuit applications. • High Collector−Emitter Sustaining Voltage — • • • • http://onsemi.com


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    2n64372n64382n63392n6341+12n6437/d PDF

    2N6339

    Abstract: 2N6341 2N6437 2N6438 MBR745 TRANSISTOR DATA
    Contextual Info: MOTOROLA Order this document by 2N6437/D SEMICONDUCTOR TECHNICAL DATA 2N6437 2N6438* High-Power PNP Silicon Transistors . . . designed for use in industrial–military power amplifier and switching circuit applications. *Motorola Preferred Device • High Collector–Emitter Sustaining Voltage —


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    2n6437/d2n64372n64382n6339+32n6341mbr745transistor data PDF

    2N6438

    Abstract: 2N6338 2N6340 2N6436 2N6437
    Contextual Info: ¿2&MOSPEC HIGH-POWER PNP SILICON TRANSISTORS . designed for use in industrial power amplifiers and switching circuit applications. PNP 2N6436 2N6437 2N6438 FEATURES: * High DC Current Gain hFE=20-80 @ lc =10A =12 Min @lc=25A * Low Collector-Emitter Saturation Voltage


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    2n63382n63402n64362n6437+22n6438vcc-80v PDF

    Contextual Info: I SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES TypeNo 2N6423 2N6424 2N6425 2N6425A 2N6436 2N6437 2N6438 2N6448 2N6461 2N6462 2N6463 2N6464 2N6465 2N6466 2N6467 2N6468 2N6469 2N6496 2N6500 2N6511 2N6512 2N6513 2N6514 2N6534 2N6535 2N6536 2N6537 2N6542


    OCR Scan
    2n64232n64242n64252n6425a+62n64362n64372n64382n64482n64612n6462 PDF

    sn76131

    Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
    Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157


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    2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b PDF

    cczl

    Abstract: 2N6193U3 MICROSEMI 1N6761-1 transistor 2N4033 1N1614 Diodes 1N6642UB 2N2222A CDWR 1N1742A m19500/483 transistor 2N3251
    Contextual Info: QML-9500-19 REV 2/2004 TABLE OF CONTENTS PART NUMBER PAGE 1N1124A - 1N3768 2 1N3821A - 1N4562B 3 1N4565A - 1N5819-1 4 1N5822 - 1N6761 5 1N6761-1 - 2N2432 6 2N2481 - 2N3902 7 2N3996 - 2N6193 8 2N9193U3 - M19500/483-02 9 Facility Codes: A1 = Santa Ana, CCYL


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    qml-9500-191n1124a1n37681n3821a+161n4562b1n4565a1n5819-11n58221n67611n6761-1cczl2n6193u3microsemi 1n6761-1transistor 2n40331n1614 diodes1n6642ub2n2222a cdwr1n1742am19500/483transistor 2n3251 PDF

    transistor buv18a

    Abstract: motorola transistor cross reference BUV18A BUX98A motorola N6030 BUT13 transistor buv10 MPSU06 transistor MJ12005 MOTOROLA MJ15021 "cross reference"
    Contextual Info: STYLE 1: PIN 1. EMITTER 2. BASE 3. COLLECTOR COLLECTOR CONNECTED TO TAB Resistive Switching IcCont Amps Max VcEO sus) Volts Min 0.5 300 MPSU10 0.8 40 MPSU02 1 120 2 Device Type *s US Max tf US Max fT MHz Min P q (Case) Watts hFE Min/Max @ lc Amp MPSU60 30 min


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    mpsu10mpsu02mpsu03mpsu04+16mpsu01mpsu01ampsu45mpsu60mpsu52mpsu51transistor buv18amotorola transistor cross referencebuv18abux98a motorolan6030but13transistor buv10mpsu06 transistormj12005 motorolamj15021 "cross reference PDF