2N65 Search Results

b1375

Abstract: 2sk270a 2SK150A MG15G1AL2 2SA1051b MG50G2CL1 mg100g1al2 2SA1015 A1265N MG100G1AL1
Contextual Info: •D IS C O N TIN U E D TYPE LIST Type No. 2N3713 2N3714 2N3715 2N3716 2N3789 2N3790 2N3791 2N3792 2N4340 2N4340S 2N4391 2N4392 2N4393 2 N 4398 2N4399 2N5038 2N5039 2N5301 2N5302 2N5303 2N6249 2N6250 2N6251 2N6546 2N6547 2SA27 2SA28 2SA29 2SA37 2SA38 2SA39

2N6543

Abstract: 2N6542
Contextual Info: JMnic Product Specification Silicon NPN Power Transistors 2N6542 2N6543 DESCRIPTION ・With TO-3 package ・High voltage,high speed APPLICATIONS ・Switching regulators ・PWM inverters and motor controls ・Solenoid and relay drivers ・Deflection circuits

2N6535

Contextual Info: Product Specification www.jmnic.com 2N6535 Silicon Power Transistors DESCRIPTION ・DARLINGTON ・With TO-66 package APPLICATIONS ・Power switching ・Hammer drivers ・Series and shunt regulators ・Audio amplifiers PINNING See Fig.2 PIN DESCRIPTION 1

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N65 Preliminary Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N65 is a high voltage MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high rugged avalanche

30ma 40v npn

Abstract: 2N6517
Contextual Info: DC COMPONENTS CO., LTD. R 2N6517 DISCRETE SEMICONDUCTORS TECHNICAL SPECIFICATIONS OF NPN EPITAXIAL PLANAR TRANSISTOR Description Designed for applications requiring high breakdown voltage. TO-92 .190 4.83 .170(4.33) Pinning 1 = Emitter 2 = Base 3 = Collector

2N6547

Abstract: tf 115 250v 15a 2N6546
Contextual Info: Inchange Semiconductor Product Specification Silicon NPN Power Transistors 2N6546 2N6547 DESCRIPTION ・With TO-3 package ・High voltage ,high speed APPLICATIONS Suited for 115 and 220 volt line operated switch-mode applications such as : ・Switching regulators

2N6569

Abstract: 2N6594
Contextual Info: Inchange Semiconductor Product Specification 2N6569 Silicon NPN Power Transistors DESCRIPTION ・With TO-3 package ・Complement to type 2N6594 ・Wide area of safe operation APPLICATIONS ・Designed for low voltage amplifier power switching applications PINNING

TRANSISTOR 2n657

Abstract: 2N657
Contextual Info: Continental Device India Limited An ISO/TS16949 and ISO 9001 Certified Company NPN SILICON PLANAR TRANSISTOR 2N657 TO-39 Metal Can Package General Purpose Transistor. ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise DESCRIPTION SYMBOL VALUE V

2N6550

Abstract: CD860 cm8601 CM860 2N6550 equivalent ultra low igss pA "TO-72 package"
Contextual Info: n t a C R Y S T A W ebsite: WWW.Crystalonics.com L O N I C S ^ C Fax: i 631-585-4858 Phone: (631-981-6140) * See price list fo r ordering inform ation ULTRA LOW NOISE 2N6550 CM 860 SILI CON E P I T A X I A L J U N C T I O N CICI H CCCCfT TRANQIQTHR M f U AI /~\

2N6545

Abstract: 2N6544 S200 300 volt 16 ampere transistor
Contextual Info: ÜE MOS PEC SWITCH MODE SERIES NPN SILICON POWER TRANSISTORS The 2N6544 and 2N6545 transistors are designed for highvoltage .high-speed,power switching inductive circuits where fall NPN 2N6544 2N6545 time is critical.they are particularly, suited for 115 and 220 volt line

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N65L Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N65L is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and a high rugged

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N65K-MT Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET „ DESCRIPTION The UTC 2N65K-MT is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

Contextual Info: UNISONIC TECHNOLOGIES CO., LTD 2N65 Power MOSFET 2A, 650V N-CHANNEL POWER MOSFET  DESCRIPTION The UTC 2N65 is a high voltage power MOSFET and is designed to have better characteristics, such as fast switching time, low gate charge, low on-state resistance and have a high

2N6534B

Contextual Info: 2N6534B Dimensions in mm inches . 6.35 (0.250) 8.64 (0.340) 3.68 (0.145) rad. max. 3.61 (0.142) 4.08(0.161) rad. Bipolar NPN Device. 2 11.94 (0.470) 12.70 (0.500) 0.71 (0.028) 0.86 (0.034) 1 14.48 (0.570) 14.99 (0.590) 24.13 (0.95) 24.63 (0.97) Bipolar NPN Device in a

2N6515

Abstract: 2N6516 2N6517 2N6519 2N6520
Contextual Info: ON Semiconductort NPN 2N6515 2N6517 PNP 2N6520 High Voltage Transistors MAXIMUM RATINGS Symbol 2N6515 2N6517 2N6520 Unit Collector–Emitter Voltage VCEO 250 350 Vdc Collector–Base Voltage VCBO 250 350 Vdc Emitter–Base Voltage 2N6515, 2N6516, 2N6517 2N6519, 2N6520

2N6520 DIODES

Abstract: 2N6515 2N6516 2N6517 2N6519 2N6520
Contextual Info: High Voltage Transistors NPN 2N6515 2N6517 PNP 2N6519 2N6520 MAXIMUM RATINGS Symbol 2N6515 2N6519 2N6517 2N6520 Unit Collector–Emitter Voltage VCEO 250 300 350 Vdc Collector–Base Voltage VCBO 250 300 350 Vdc Emitter–Base Voltage 2N6515, 2N6516, 2N6517

2N6537

Contextual Info: SavantIC Semiconductor Product Specification 2N6537 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·DARLINGTON APPLICATIONS ·Power switching ·Hammer drivers ·Series and shunt regulators ·Audio amplifiers PINNING See Fig.2 PIN DESCRIPTION

2N6569

Abstract: 2N6594
Contextual Info: SavantIC Semiconductor Product Specification 2N6594 Silicon PNP Power Transistors DESCRIPTION •With TO-3 package ·Complement to type 2N6569 ·Wide area of safe operation APPLICATIONS ·Designed for low voltage amplifier power switching applications PINNING

Contextual Info: 2N6516 NPN EPITAXIAL SILICON TRANSISTOR HIGH VOLTAGE TRANSISTOR TO-92 • Collector-Emitter Voltage: VCEO=300V • Collector Dissipation: PC max =625mW ABSOLUTE MAXIMUM RATINGS (TA=25°°C) Characteristic Collector-Base Voltage Collector-Emitter Voltage Emitter-Base Voltage

2N6536

Contextual Info: SavantIC Semiconductor Product Specification 2N6536 Silicon NPN Power Transistors DESCRIPTION •With TO-66 package ·DARLINGTON APPLICATIONS ·Power switching ·Hammer drivers ·Series and shunt regulators ·Audio amplifiers PINNING See Fig.2 PIN DESCRIPTION

2N6515

Abstract: 2N6516 2N6517 2N6518
Contextual Info: 2N6515 2N6515 High Voltage Transistor • Collector-Emitter Voltage: VCEO= 250V • Collector Dissipation: PC max =625mW • Complement to 2N6518 TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted

Contextual Info: Power Transistors TO-202 Case TYPE NO. NPN PNP @ Ic hFE ic PD BVCBO BVCEO A (W) 00 (V) MIN MIN MIN MAX MAX (mA) VCE(SAT) @ IC (V) (A) MAX n (MHz) MIN 2N6548 2.0 2.0 50 40 25,000 150,000 200 2.0 2.0 100 2N6549 2.0 2.0 50 40 15,000 150,000 200 2.0 2.0 100

2N6517

Abstract: 2N6515 2N6516 2N6519 2N6520
Contextual Info: Continental Device India Limited An ISO/TS 16949, ISO 9001 and ISO 14001 Certified Company NPN SILICON PLANAR EPITAXIAL TRANSISTORS 2N6515, 2N6519 2N6516, 2N6520 2N6517 TO-92 Plastic Package HIGH VOLTAGE TRANSISTORS ABSOLUTE MAXIMUM RATINGS Ta=25ºC unless specified otherwise

Contextual Info: 2N6516 2N6516 High Voltage Transistor • Collector-Emitter Voltage: VCEO=300V • Collector Dissipation: PC max =625mW • Complement to 2N6519 TO-92 1 1. Emitter 2. Base 3. Collector NPN Epitaxial Silicon Transistor Absolute Maximum Ratings Ta=25°C unless otherwise noted