2N6549 Search Results

Contextual Info: Power Transistors TO-202 Case TYPE NO. NPN PNP @ Ic hFE ic PD BVCBO BVCEO A (W) 00 (V) MIN MIN MIN MAX MAX (mA) VCE(SAT) @ IC (V) (A) MAX n (MHz) MIN 2N6548 2.0 2.0 50 40 25,000 150,000 200 2.0 2.0 100 2N6549 2.0 2.0 50 40 15,000 150,000 200 2.0 2.0 100

2N6555

Abstract: U45 semiconductor cen 30 CEN-U60 CEN-U45 2N6548 power 2n6549 TO-202 transistor 2N6548 2N6551
Contextual Info: Power Transistors TO-202 Case TYPE NO. NPN IC A PNP 2N6548 MAX 2.0 2N6549 PD (W) 2.0 BVCBO (V) BVCEO (V) hFE @ IC (mA) MIN MIN MIN MAX 50 40 25,000 150,000 200 VCE(SAT) (V) @ IC (A) MAX 2.0 fT (MHz) MIN 2.0 100 2.0 2.0 50 40 15,000 150,000 200 2.0 2.0 100

N6555

Abstract: 2N6593 2n6557 2N6558 IC N6555 2N6552 to 202 case 2N6548 2N6549 2N6551
Contextual Info: Power Transistors TO-202 Case Z NPN Ö TYPE PNP 2N6548 2N6549 ic PD A (W) MAX BVCBO BVCEO @ lc hFE (V) (V) MIN MIN MIN MAX VCE(SAT) @ IC (mA) (A) MAX 2.0 2.0 50 40 25,000 150,000 200 15,000 150,000 200 n (MHz) MIN : 2.0 ; ; 2.0 100 2.0 20 100 2.0 2.0 50

CEN-U07

Abstract: CEN-U56 2n6555 TO-202-2 transistor cen-u07 equivalent CEN-U45 2N6556 2N6549 2N6551 2N6553
Contextual Info: Power Transistors TO-202 Case TYPE NO. NPN PNP 2N6548 IC A PD (W) MAX 2.0 2N6549 2.0 BVCBO (V) BVCEO (V) hFE @ IC (mA) MIN MIN MIN MAX 50 40 25,000 150,000 200 VCE(SAT) (V) @ IC (A) MAX 2.0 fT (MHz) MIN 2.0 100 2.0 2.0 50 40 15,000 150,000 200 2.0 2.0 100

2N6549

Abstract: 2N6548 power W5040 TO202
Contextual Info: 2N6548 2N6549 NPN SILICON DARLINGTON TRANSISTOR w w w. c e n t r a l s e m i . c o m DESCRIPTION: The CENTRAL SEMICONDUCTOR 2N6548 series types are NPN silicon Darlington transistors designed for amplifier and driver applications where high gain at a high collector current is important.

IC N6555

Abstract: N6555 2N6549 2N6558 N6554 2n6556 2N6548 2N6551 2N6552 2N6553
Contextual Info: Power Transistors TO-202 Case Z NPN Ö TYPE PNP 2N6548 2N6549 ic PD A (W) MAX BVCBO BVCEO @ lc hFE (V) (V) MIN MIN MIN MAX VCE(SAT) @ IC (mA) (A) MAX 2.0 2.0 50 40 25,000 150,000 200 15,000 150,000 200 n (MHz) MIN : 2.0 ; ; 2.0 100 2.0 20 100 2.0 2.0 50

2n6554

Abstract: 2N6556
Contextual Info: Power Transistors o i TO-202 Case TYPE NO. NPN PNP •c PD A (W) MAX BVCBO BVCEO @ lc hFE (V) (V) MIN MIN MIN MAX (mA) VCE(SAT) @ 1C 00 (A) MAX fr (MHz) MIN 2N6548 2.0 2.0 50 40 25,000 150,000 200 2.0 2.0 100 2N6549 2.0 2.0 50 40 15,000 150,000 200 2.0 2.0

Contextual Info: Pow er Transistors TO-202 Case TYPE NO. NPN PNP ic PD A (W) MAX BVCBO BVCEO @ ic hFE (V) (V) (mA) MIN MIN MIN MAX VCi(SAT) @ IC (V) (A) MAX fT (MHz) MIN 2N6548 2.0 2.0 50 40 25,000 150,000 200 2.0 2.0 100 2N6549 2.0 2.0 50 40 15,000 150,000 200 2.0 2.0 100

World transistors and ic

Abstract: 2N65 2N6548 power 2n6549 2N6548 2N658
Contextual Info: Datasheet Central 2N65^8 2N6549 Sem iconductor Con>. NPN S IL IC O N 145 Adam s Avenue, Hauppauge, NY 11788 U S A Tel: 631 435-1110 • Fax: (631) 435-1824 DARLINGTON TR A N S IS T O R S JE D E C T 0 - 2 0 2 CASE (E B C ) M anufacturers of W orld C la s s D iscrete S em ico n d u cto rs

CEN-U45

Abstract: to 202 case 2N6549 2n6551 2N6556
Contextual Info: P ow er T ra n sisto rs TO-202 Case NPN O Z TYPE PNP ic PD A <W) MAX BVCBO BVCEO @ Ic hFE (mA) (V) (V) MIN MIN MIN MAX VCE(SAT) @ IC (V) (A) MAX fT (MHz) MIN 2N6548 2.0 2.0 50 40 25,000 150,000 200 2.0 2.0 100 2N6549 2.0 2.0 50 40 15,000 150,000 200 2.0

Contextual Info: Power Transistors TO-202 Case TYPE MO. - ìtm : : ic PD A m Bwepo •W B». ':m \ (mA) , Ana MAX : «.ItlKl'IU 2.0 ■: 2.0 ■8Ö, 2N6549 2.0 2.0 ■ m y: VCE(SAT) e Ic f:;y. : ; 28*000 IWQfiBQ " 40 - ■ ■ MAX -! (A) m :-t- MAX n (MHz) WN 200 2.0 2,0

cen-u45

Abstract: RJP 30 D40N 2N6558 RJP 35
Contextual Info: Power Transistors TO-202 Case TYPE NO. NPN RJP ic PD A> <W MAX BVCBO BVCEO @ Ic hFE (V) (V) MIN MIN MM MAX (mA) VCE(SAT) IC (A) (V) MAX tr (MHz) MIN 2N6548 2.0 2.0 50 40 25,000 150,000 200 2.0 2.0 100 2N6549 2,0 2.0 50 40 15,000 150,000 200 2.0 2.0 100

BUV48I

Abstract: BU808DXI BD699 buv18a BD241CFI transistor 2SA1046 BUW52I BU808DFI equivalent BU724AS 2SA1046
Contextual Info: BIPOLAR TRANSISTOR INTRODUCTION TO BIPOLAR CROSS REFERENCE In order to improve our overall service, SGS-THOMSON has introduced a system of preferred transistor sales types. The following cross-reference is intended as a guide to identify sales types that may be suitable

t1p117

Abstract: T1P110 T1P111 T1P112 MJE3310 t1p115 MJE3311 MJE3300 D41K2 2N6548
Contextual Info: 1989963 CENTRAL SEMICONDUCTOR ; CENTRAL tï SEMICONDUCTOR 6 i r noi 94 T-/n_?q D Ë J n f i tn t 3 DGaaim b T i T -.-5 3 - 3 / T \3 3 - £ 3 POWER DARLINGTON TRANSISTORS EPOXY le = O P E R A T I N G A N D S T O R A G E T E M P E R A T U R E - 6 5 ° t o +150°C

2N5657 equivalent

Abstract: 2SA1046 BU326 BU108 BU100 2SC2331 Y tip47 419 2N3792 application notes
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N5655 2N5656 2N5657 Plastic NPN Silicon High-Voltage Power Transistor . . . designed for use in line–operated equipment such as audio output amplifiers; low–current, high–voltage converters; and AC line relays.

MJE494

Abstract: 2SC1419 BD 804 2SD675 MJE104 BD581 BD135 CURVES MJ1000 DTS-4041 2N5037
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD157 BD158 BD159 Plastic Medium Power NPN Silicon Transistor . . . designed for power output stages for television, radio, phonograph and other consumer product applications. 0.5 AMPERE POWER TRANSISTORS NPN SILICON 250 – 300 – 350 VOLTS

2SD669 equivalent

Abstract: BD801 BDY29 equivalent BU108 2SC2080 2SD436 2N6021 BD345 tip122 D-PAK package 2SD544
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA 2N6609 See 2N3773 Darlington Silicon Power Transistors 2N6667 2N6668 . . . designed for general–purpose amplifier and low speed switching applications. • High DC Current Gain — hFE = 3500 (Typ) @ IC = 4 Adc • Collector–Emitter Sustaining Voltage — @ 200 mAdc

2SC495

Abstract: NSP41A BU108 transistor BD614 MOTOROLA 2SA663 BD4122 BD661 MJ1000 NSP2100 D45VH4 similar
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJF6107 Power Transistor For Isolated Package Applications PNP SILICON POWER TRANSISTOR 7 AMPERES 70 VOLTS 34 WATTS Designed for general–purpose amplifier and switching applications, where the mounting surface of the device is required to be electrically isolated from the heatsink

"Tektronix 475"

Abstract: equivalent 2n6488 TIP42C EQUIVALENT BU108 motorola darlington power transistor motorola 266 TO-204AA transistor D45H11 equivalent replacement pnp bux TRANSISTOR REPLACEMENT table for transistor tip3055 equivalent
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BUX48 BUX48A SWITCHMODE II Series NPN Silicon Power Transistors 15 AMPERES NPN SILICON POWER TRANSISTORS 400 AND 450 VOLTS V BR CEO 850 – 1000 VOLTS V(BR)CEX 175 WATTS The BUX 48/BUX 48A transistors are designed for high–voltage, high–speed,

D42C5

Abstract: transistor bc 647 2N5302 EB pin out TRANSISTOR tip2955 bs170 replacement 2sc141 BU108 bc 658 Motorola transistors MJE3055 TO 127 MC7812 TO-220
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA  Data Sheet SCANSWITCH Designer's MJE16204 NPN Bipolar Power Deflection Transistor For High and Very High Resolution Monitors The MJE16204 is a state–of–the–art SWITCHMODE bipolar power transistor. It is

mje521 equivalent

Abstract: BU108 2N3055 plastic 2N6488 MOTOROLA Motorola transistors MJE3055 TO 127 3904 Transistor BDX54 tip122 tip127 audio amp BU326 BU100
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA MJE521 Plastic Medium-Power NPN Silicon Transistor 4 AMPERE POWER TRANSISTOR NPN SILICON 40 VOLTS 40 WATTS . . . designed for use in general–purpose amplifier and switching circuits. Recommended for use in 5 to 10 Watt audio amplifiers utilizing complementary symmetry

2N3055

Abstract: BU108 AN415A MJE2955T ST BDX54 2n3055 audio amplifier application note BU326 BU100 mje13005 BDV64
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA PNP MJE2955T * NPN MJE3055T * Complementary Silicon Plastic Power Transistors . . . designed for use in general–purpose amplifier and switching applications. *Motorola Preferred Device • DC Current Gain Specified to 10 Amperes

2N5631 equivalent

Abstract: 2N5630 "cross-reference" Chomerics BU108 2SA1046 tip122 tip127 audio amp BU326 BU100 2sd313 equivalent NPN/TIP42C as regulator
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA NPN 2N5630 High-Voltage Ċ High Power Transistors 2N5631 PNP 2N6030 . . . designed for use in high power audio amplifier applications and high voltage switching regulator circuits. • High Collector Emitter Sustaining Voltage —

BD179-10 equivalent

Abstract: BU108 2SA1046 2SC7 BDX54 BUX98A BU326 BU100 bul1
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA BD179 BD179-10 Plastic Medium Power Silicon NPN Transistor 3.0 AMPERES POWER TRANSISTORS NPN SILICON 80 VOLTS 30 WATTS . . . designed for use in 5.0 to 10 Watt audio amplifiers and drivers utilizing complementary or quasi complementary circuits.