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Rochester Electronics LLC
2N6341G POWER BIPOLAR TRANSISTOR, 25A, 1
2N6341G ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Digi-Key 2N6341G Bulk 418 34 - - $8.99 $8.99 $8.99 More Info
Solid State Devices Inc (SSDI)
2N6341 TRANS NPN 150V 25A TO3
2N6341 ECAD Model
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Digi-Key 2N6341 Bulk 200 10 - $3.2 $3.2 $3.2 $3.2 More Info
onsemi
2N6341 TRANS NPN 150V 25A TO204
2N6341 ECAD Model
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Digi-Key 2N6341 Tray 0 100 - - $9.4133 $9.4133 $9.4133 More Info
Microchip Technology Inc
2N6341 TRANS NPN 150V 50UA TO3
2N6341 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Digi-Key 2N6341 Bulk 0 100 - - $75.9 $75.9 $75.9 More Info
Avnet Americas 2N6341 Bulk 0 35 Weeks 100 $78.43 $78.43 $75.9 $73.37 $73.37 More Info
Newark 2N6341 Bulk 0 100 - - $65.78 $63.25 $63.25 More Info
Microchip Technology Inc 2N6341 0 1 $70.83 $70.83 $70.83 $70.83 $70.83 More Info
Onlinecomponents.com 2N6341 0 - - $71.88 $64.87 $64.87 More Info
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NAC 2N6341 Tray 0 5 Weeks 111 $101.2 $101.2 $101.2 $101.2 $101.2 More Info
Master Electronics 2N6341 0 - - $71.88 $64.87 $64.87 More Info
onsemi
2N6341G TRANS NPN 150V 25A TO-3
2N6341G ECAD Model
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Digi-Key 2N6341G Tray 0 - - - - - More Info
Avnet Americas (2) 2N6341G Tray 0 4 Weeks 38 - - $9.436 $8.8968 $8.3576 More Info
2N6341G Tray 0 100 - - - - - More Info
Newark 2N6341G Bulk 0 100 $13.1 $13.1 $13.1 $13.1 $13.1 More Info
Rochester Electronics 2N6341G 418 $9.07 $9.07 $8.71 $8.34 $8.34 More Info
Avnet Europe 2N6341G 0 52 Weeks, 2 Days 100 - - €22.28079 €12.59349 €11.81851 More Info
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Farnell 2N6341G Each 0 51 Weeks, 1 Days 100 - - £13.48 £13.48 £13.48 More Info
Flip Electronics 2N6341G 500 - - - - - More Info
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Microchip Technology Inc
JAN2N6341 TRANS NPN 150V 10UA TO3
JAN2N6341 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Digi-Key JAN2N6341 Bulk 0 100 - - $114.195 $114.195 $114.195 More Info
Avnet Americas JAN2N6341 Bulk 0 35 Weeks 100 $118.0015 $118.0015 $114.195 $110.3885 $110.3885 More Info
Newark JAN2N6341 Bulk 0 100 - - $91.5 $91.5 $91.5 More Info
Microchip Technology Inc JAN2N6341 0 $106.58 $106.58 $106.58 $106.58 $106.58 More Info
Onlinecomponents.com JAN2N6341 0 - - $108.15 $97.6 $97.6 More Info
More Distributors
NAC JAN2N6341 Tray 0 5 Weeks 111 $152.26 $152.26 $152.26 $152.26 $152.26 More Info
Master Electronics JAN2N6341 0 - - $108.15 $97.6 $97.6 More Info
Microchip Technology Inc
JANTX2N6341 TRANS NPN 150V 25A TO3
JANTX2N6341 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Digi-Key JANTX2N6341 Bulk 0 100 - - $129 $129 $129 More Info
Avnet Americas JANTX2N6341 Bulk 0 35 Weeks 100 $133.3 $133.3 $129 $124.7 $124.7 More Info
Newark JANTX2N6341 Bulk 0 100 - - $111.79 $107.5 $107.5 More Info
Microchip Technology Inc JANTX2N6341 0 $120.39 $120.39 $120.39 $120.39 $120.39 More Info
Onlinecomponents.com JANTX2N6341 0 - - $122.17 $110.26 $110.26 More Info
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NAC JANTX2N6341 Tray 0 5 Weeks 111 $172 $172 $172 $172 $172 More Info
Master Electronics JANTX2N6341 0 - - $122.17 $110.26 $110.26 More Info
Microchip Technology Inc
JANTXV2N6341 TRANS NPN 150V 50UA TO3
JANTXV2N6341 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Digi-Key JANTXV2N6341 Bulk 0 100 - - $149.31 $149.31 $149.31 More Info
Avnet Americas JANTXV2N6341 Bulk 0 35 Weeks 100 $154.287 $154.287 $149.31 $144.333 $144.333 More Info
Newark JANTXV2N6341 Bulk 0 100 - - $118.5 $118.5 $118.5 More Info
Microchip Technology Inc JANTXV2N6341 0 $139.36 $139.36 $139.36 $139.36 $139.36 More Info
Onlinecomponents.com JANTXV2N6341 0 - - $141.4 $127.62 $127.62 More Info
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NAC JANTXV2N6341 Tray 0 5 Weeks 111 $199.08 $199.08 $199.08 $199.08 $199.08 More Info
Master Electronics JANTXV2N6341 0 - - $141.4 $127.62 $127.62 More Info
Susumu Co Ltd
RG2012N-6341-W-T1 RES SMD 6.34KOHM 0.05% 1/8W 0805
RG2012N-6341-W-T1 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Digi-Key RG2012N-6341-W-T1 Reel 0 1,000 - - - $0.32744 $0.32744 More Info
Newark RG2012N-6341-W-T1 Reel 0 1,000 - - - $0.327 $0.327 More Info
Susumu Co Ltd
RG2012N-6341-B-T1 RES SMD 6.34K OHM 0.1% 1/8W 0805
RG2012N-6341-B-T1 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Digi-Key RG2012N-6341-B-T1 Reel 0 1,000 - - - $0.21223 $0.21223 More Info
Susumu Co Ltd
RG2012N-6341-P-T1 RES SMD 6.34KOHM 0.02% 1/8W 0805
RG2012N-6341-P-T1 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Digi-Key RG2012N-6341-P-T1 Reel 0 1,000 - - - $0.45163 $0.45163 More Info
Susumu Co Ltd
RG2012N-6341-B-T5 RES SMD 6.34K OHM 0.1% 1/8W 0805
RG2012N-6341-B-T5 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Digi-Key RG2012N-6341-B-T5 Reel 0 5,000 - - - - $0.20066 More Info
Newark RG2012N-6341-B-T5 Reel 0 5,000 - - - - $0.192 More Info
Susumu Co Ltd
RG2012N-6341-W-T5 RES SMD 6.34KOHM 0.05% 1/8W 0805
RG2012N-6341-W-T5 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Digi-Key RG2012N-6341-W-T5 Reel 0 5,000 - - - - $0.29753 More Info
Newark RG2012N-6341-W-T5 Reel 0 5,000 - - - - $0.287 More Info
Susumu Co Ltd
RG2012N-6341-C-T5 RES SMD 6.34KOHM 0.25% 1/8W 0805
RG2012N-6341-C-T5 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Digi-Key RG2012N-6341-C-T5 Reel 0 5,000 - - - - $0.14498 More Info
Susumu Co Ltd
RG2012N-6341-D-T5 RES SMD 6.34K OHM 0.5% 1/8W 0805
RG2012N-6341-D-T5 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Digi-Key RG2012N-6341-D-T5 Reel 0 5,000 - - - - $0.10264 More Info
Newark RG2012N-6341-D-T5 Reel 0 5,000 - - - - $0.102 More Info
VPT Components
2N6341JAN Trans GP BJT NPN 150V 25A 2-Pin TO-3 - Bulk (Alt: JAN2N6341)
2N6341JAN ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet Americas 2N6341JAN Bulk 0 11 - - $125.685 $118.125 $115.29 More Info
VPT Components
JANTX2N6341 Trans GP BJT NPN 150V 25A 2-Pin TO-3 - Bulk (Alt: JANTX2N6341)
JANTX2N6341 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet Americas JANTX2N6341 Bulk 0 10 - $143.2851 $129.1584 $123.1041 $123.1041 More Info
VPT Components
2N6341JANTXV Trans GP BJT NPN 150V 25A 2-Pin TO-3 - Bulk (Alt: JANTXV2N6341)
2N6341JANTXV ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Avnet Americas 2N6341JANTXV Bulk 0 9 - $165.7992 $149.4528 $142.4472 $142.4472 More Info
SPC Multicomp
2N6341 Bipolar Transistor, Npn, 150V, To-3; Transistor Polarity:Npn; Collector Emitter Voltage Max:150V; Continuous Collector Current:25A; Power Dissipation:200W; Transistor Mounting:Through Hole; No. Of Pins:2Pins; Product Range:-; Msl:- Rohs Compliant: Yes |Multicomp Pro 2N6341
2N6341 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Newark 2N6341 Bulk 163 1 $5.91 $5.42 $5.42 $5 $4.34 More Info
element14 Asia-Pacific 2N6341 Each 172 1 $14.11 $11.06 $8.97 $8.22 $8.22 More Info
Farnell 2N6341 Each 9 6 Weeks, 1 Days 1 £16.53 £9.02 £5.51 £4.96 £4.96 More Info
Solid State Manufacturing
2N6341 TO 3 25 Amp Silicon Transistor
2N6341 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
RS 2N6341 Bulk 0 100 - - $4.83 $4.41 $4.41 More Info
GSI Technology
2N6341
2N6341 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Bristol Electronics 2N6341 1 - - - - - More Info
Solitron Devices Inc
2N6341
2N6341 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Bristol Electronics 2N6341 5 2 - $4.48 $4.48 $4.48 $4.48 More Info
Motorola Semiconductor Products
2N6341
2N6341 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Bristol Electronics 2N6341 2 - - - - - More Info
Motorola Mobility LLC
2N6341
2N6341 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Bristol Electronics 2N6341 5 2 - $4.48 $4.48 $4.48 $4.48 More Info
STMicroelectronics
JAN2N6341
JAN2N6341 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Bristol Electronics JAN2N6341 3 1 $16.8 $16.8 $16.8 $16.8 $16.8 More Info
NES
JANTX2N6341
JANTX2N6341 ECAD Model
Distributors Part Package Stock Lead Time Min Order Qty 1 10 100 1,000 10,000
Bristol Electronics JANTX2N6341 2 - - - - - More Info

2N6341 datasheet (49)

Part ECAD Model Manufacturer Description Type PDF
2N6341 2N6341 ECAD Model Microsemi NPN Power Silicon Transistor Original PDF
2N6341 2N6341 ECAD Model On Semiconductor Silicon NPN Transistor Original PDF
2N6341 2N6341 ECAD Model On Semiconductor POWER TRANSISTORS NPN SILICON - Pol=NPN / Pkg=TO3 / Vceo=150 / Ic=25 / Hfe=30-120 / fT(Hz)=40M / Pwr(W)=200 Original PDF
2N6341 2N6341 ECAD Model ON Semiconductor Transistors (BJT) - Single, Discrete Semiconductor Products, TRANSISTOR NPN 150V 25A TO-3 Original PDF
2N6341 2N6341 ECAD Model Advanced Semiconductor Silicon Transistor Selection Guide Scan PDF
2N6341 2N6341 ECAD Model API Electronics 25 AMPS / 30 AMPS NPN Transistors Scan PDF
2N6341 2N6341 ECAD Model API Electronics 25 Amp Transistors Scan PDF
2N6341 2N6341 ECAD Model Boca Semiconductor HIGH-POWER NPN SILICON TRANSISTORS - Pol=NPN / Pkg=TO3 / Vceo=150 / Ic=25 / Hfe=30-120 / fT(Hz)=40M / Pwr(W)=200 Scan PDF
2N6341 2N6341 ECAD Model Diode Transistor Transistor Short Form Data Scan PDF
2N6341 2N6341 ECAD Model General Semiconductor Low Frequency Silicon Power NPN Transistor Scan PDF
2N6341 2N6341 ECAD Model Mospec POWER TRANSISTOR(25A,200W) - Pol=NPN / Pkg=TO3 / Vceo=150 / Ic=25 / Hfe=30-120 / fT(Hz)=40M / Pwr(W)=200 Scan PDF
2N6341 2N6341 ECAD Model Motorola The European Selection Data Book 1976 Scan PDF
2N6341 2N6341 ECAD Model Motorola European Master Selection Guide 1986 Scan PDF
2N6341 2N6341 ECAD Model Motorola Motorola Semiconductor Data & Cross Reference Book Scan PDF
2N6341 2N6341 ECAD Model Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N6341 2N6341 ECAD Model Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N6341 2N6341 ECAD Model Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N6341 2N6341 ECAD Model Others Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Scan PDF
2N6341 2N6341 ECAD Model Others Semiconductor Master Cross Reference Guide Scan PDF
2N6341 2N6341 ECAD Model Others Shortform Transistor Datasheet Guide Scan PDF

2N6341 Datasheets Context Search

Catalog Datasheet MFG & Type PDF Document Tags
2002 - 2N6341

Abstract: 2N6338 JANTX 2N6341 1000C 2000C TRANSISTOR 2n6338
Text: Level 2N6338 JANTX JANTXV 2N6341 MAXIMUM RATINGS Ratings Collector-Emitter Voltage , ) Symbol 2N6338 2N6341 Unit VCEO VCBO VEBO IB IC 100 120 150 180 Vdc Vdc Vdc , . Unit 2N6338 2N6341 V(BR)CEO 100 150 2N6338 2N6341 ICEO 50 µAdc 2N6338 2N6341 ICEX 10 10 µAdc IEBO 100 µAdc ICEO 10 10 µAdc OFF CHARACTERISTICS , Current VEB = 6.0 Vdc Collector-Base Cutoff Current VCB = 120 Vdc VCB = 180 Vdc 2N6338 2N6341 6


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PDF MIL-PRF-19500/509 2N6338 2N6341 1000C O-204AA) 2N6341 2N6338 JANTX 2N6341 1000C 2000C TRANSISTOR 2n6338
2N6339

Abstract: 2N6340 2N6338 2N6341 2N6436
Text: 2N6340 2N6341 DESCRIPTION ·With TO-3 package ·Fast switching times ·Low collector saturation , emitter 140 160 2N6341 Collector-emitter voltage 100 2N6339 2N6340 Open base 2N6341 , Product Specification Silicon NPN Power Transistors 2N6338 2N6339 2N6340 2N6341 CHARACTERISTICS , 2N6340 140 2N6341 150 VCEsat-1 Collector-emitter saturation voltage IC=10A; IB , current 2N6339 VCE= 60V,IB=0 2N6340 VCE= 70V,IB=0 2N6341 ICEO VCE= 50V,IB=0 VCE


Original
PDF 2N6338 2N6339 2N6340 2N6341 2N6436 2N6338 2N6339 2N6340 2N6341
2n6341

Abstract: No abstract text available
Text: Qualified Level 2N6338 JANTX JANTXV 2N6341 MAXIMUM RATINGS Ratings Collector-Emitter Voltage , ) Symbol 2N6338 2N6341 Unit VCEO VCBO VEBO IB IC 100 120 150 180 Vdc Vdc Vdc , Symbol Min. Max. Unit 2N6338 2N6341 V(BR)CEO 100 150 2N6338 2N6341 ICEO 50 µAdc 2N6338 2N6341 ICEX 10 10 µAdc IEBO 100 µAdc ICEO 10 10 µAdc , = 120 Vdc VCB = 180 Vdc 2N6338 2N6341 6 Lake Street, Lawrence, MA 01841 1-800-446-1158


Original
PDF MIL-PRF-19500/ 2N6338 2N6341 1000C O-204AA) 2n6341
1999 - JANTX 2N6341

Abstract: ADC 0803 datasheet adc-ic 2N6338 2N6341 all ic data all ic datasheet 1000C 2000C
Text: TECHNICAL DATA 2N6338 JANTX, JTXV 2N6341 JANTX, JTXV MIL-PRF QPL DEVICES Processed per , 250C @ TC = 1000C Operating & Storage Junction Temperature Range Symbol 2N6338 2N6341 , unless otherwise noted) Characteristics Symbol Min. Max. Unit 2N6338 2N6341 V(BR)CEO 100 150 2N6338 2N6341 ICEO 50 µAdc 2N6338 2N6341 ICEX 10 10 µAdc IEBO , 6.0 Vdc Collector-Base Cutoff Current VCB = 120 Vdc VCB = 180 Vdc 2N6338 2N6341 6 Lake


Original
PDF 2N6338 2N6341 MIL-PRF-19500/509 1000C 2N6338 2N6341 2000C 87Adc, JANTX 2N6341 ADC 0803 datasheet adc-ic all ic data all ic datasheet 1000C 2000C
2011 - 2N6341

Abstract: 2n6338
Text: ˆ’204AA (Pb−Free) 100 Units / Tray 2N6341 TO−204AA 100 Units / Tray 2N6341G TOâ , 2N6338, 2N6341 High-Power NPN Silicon Transistors . . . designed for use in , Voltage − VCEO(sus) = 100 Vdc (Min) − 2N6338 = 150 Vdc (Min) − 2N6341 • High DC Current Gain â , Collector−Base Voltage Collector−Emitter Voltage Emitter−Base Voltage Symbol 2N6338 2N6341 , ) Symbol 2N6338 2N6341 Collector Cutoff Current (VCE = 50 Vdc, IB = 0) (VCE = 75 Vdc, IB = 0


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PDF 2N6338, 2N6341 2N6338 2N6338/D 2N6341 2n6338
2N6339

Abstract: 2N6338 2N6340 2N6341
Text: 75 100 125 150 175 200 T0 , TEMPERATURE^ C) Characteristic Symbol 2N6338 2N6339 2N6340 2N6341 Unit , Case Rejc 0.875 °C/W NPN 2N6338 2N6339 2N6340 2N6341 25 AMPERE POWER TRANSISTOR NPN SILICON 100-150 , thru 2N6341 NPN ELECTRICAL CHARACTERISTICS (Tc = 25°C unless otherwise noted ) Characteristic , ) 2N6338 2N6339 2N6340 2N6341 VCEO(sus) 100 120 140 150 V Collector Cutoff Current (VCE= 50 V, lB= 0 ) 2N6338 (VCE= 60 V, lB= 0 ) 2N6339 ( VCE= 70 V, lB= 0 ) 2N6340 ( VCE= 75 V, lB= 0 ) 2N6341 'ceo 50 50 50


OCR Scan
PDF 2N6436-38 2N6338 2N6339 2N6340 2N6341 10MHz)
2011 - 2N6341

Abstract: 2N6338G 2N6338 2N6341G
Text: 2N6338 2N6338G 2N6341 2N6341G Package TO-204AA TO-204AA (Pb-Free) TO-204AA TO-204AA (Pb-Free) Shipping , 2N6338, 2N6341 High-Power NPN Silicon Transistors . . . designed for use in industrial-military , (sus) = 100 Vdc (Min) - 2N6338 = 150 Vdc (Min) - 2N6341 · High DC Current Gain - hFE = 30 - 120 @ IC = , ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎ ÎÎÎ ÎÎÎ Symbol VCB VEB IC 2N6338 120 100 2N6341 180 150 Unit Vdc Vdc Vdc Adc , : 2N6338/D 2N6338, 2N6341 200 PD, POWER DISSIPATION (WATTS) 175 150 125 100 75 50 25 0 0 25 50 75 100


Original
PDF 2N6338, 2N6341 2N6338 2N6341 2N6338/D 2N6338G 2N6338 2N6341G
2005 - 2N6341

Abstract: 2N6338 2N6340 2N6339 2N6436
Text: JMnic Product Specification Silicon NPN Power Transistors 2N6338 2N6339 2N6340 2N6341 , 2N6341 180 2N6338 100 2N6339 VCEO Collector-emitter voltage 120 Open base V 2N6340 140 2N6341 VEBO UNIT 120 2N6339 VCBO VALUE 150 Emitter-base voltage , Product Specification Silicon NPN Power Transistors 2N6338 2N6339 2N6340 2N6341 CHARACTERISTICS , 140 2N6341 150 VCEsat-1 Collector-emitter saturation voltage IC=10A; IB=1.0A 1.0


Original
PDF 2N6338 2N6339 2N6340 2N6341 2N6436 2N6338 2N6340 2N6339 2N6341
LM 3117

Abstract: 2n6341 2N6339 2N6338
Text: 2N6339 = 140 Vdc (Min) - 2N6340 = 150 Vdc (Min) - 2N6341 High DC Current Gain - hpE = 30 - 120 @ lc = , M A X IM U M R A T IN G S Rating Symbol VCB VCEO Veb 2N6338 2N6339 2N6340 2N6341 Unit , 2N6339 2N6340 2N6341 'ELE C TR IC A L CHARACTERISTICS H e - 25°C unless otherwise noted) Characteristic , 0) 2N6338 2N6339 2N6340 2N6341 2N6338 2N6339 2N6340 2N6341 VCEO(sus) 100 120 140 150 - , 3-118 Motorola Bipolar Power Transistor Device Data 2N6338 2N6339 2N6340 2N6341 2.0 3.0 5.0


OCR Scan
PDF 2N6338 2N6339 2N6340 2N6341 LM 3117 2N6339 2N6338
2N6341

Abstract: 2N6338 2N6339 2N6340 High-Power NPN Silicon Power Transistor
Text: ,TEMPERATURE(°C) Characteristic Symbol 2N6338 2N6339 2N6340 2N6341 Unit Collector-Emitter Voltage VCEO 100 , NPN 2N6338 2N6339 2N6340 2N6341 25 AMPERE POWER TRANSISTOR NPN SILICON 100-150 VOLTS 200 WATTS TO , 0.92 1.09 G 1.38 1.62 H 29.90 30.40 1 16.64 17.30 J 3.88 4.36 K 10.67 11.18 2N6338 thru 2N6341 , ) 2N6338 2N6339 2N6340 2N6341 VCEO(sus) 100 120 140 150 V Collector Cutoff Current (VCE= 50 V, lB= 0 ) 2N6338 (VCE= 60 V, lB= 0 ) 2N6339 ( VCE= 70 V, lB= 0 ) 2N6340 ( VCE= 75 V, lB= 0 ) 2N6341 'ceo 50 50 50


OCR Scan
PDF 2N6436-38 2N6338 2N6339 2N6340 2N6341 10MHz) High-Power NPN Silicon Power Transistor
2001 - Not Available

Abstract: No abstract text available
Text: VCEO(sus) = 100 Vdc (Min) - 2N6338 = 150 Vdc (Min) - 2N6341 · High DC Current Gain - hFE = 30 - 120 @ , Continuous Peak Base Current Symbol VCB VCEO VEB IC 2N6338 120 100 2N6338 2N6341 * *ON Semiconductor , ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ 2N6341 180 150 Unit Vdc , , IB = 0) 2N6338 2N6341 VCEO(sus) ICEO 100 150 - - - - - - - - Vdc µAdc 2N6338 2N6341 50 50 Collector , = 10 TJ = 25°C 2N6338 2N6341 NOTE: For information on Figures 3 and 6, RB and RC were varied


Original
PDF 2N6338 2N6341 2N6338 2N6341*
NPN Transistor VCEO 80V 100V

Abstract: 2N6338 2N6341 Vce(sat) 2N6339 2N6340 6341
Text: 120V(Min)- 2N6339 = 140V(Min)- 2N6340 = 160V(Min)- 2N6341 ·High Switching Speed ·Low Saturation , 2N6341 2N6338 120 140 160 180 VEBO V 100 2N6339 120 2N6340 140 2N6341 , 2N6339 120 IC= 50mA ; IB= 0 V 2N6340 140 2N6341 150 VCE(sat)-1 Collector-Emitter , Cutoff Current 2N6340 2N6341 .cn mi e scs .i 2N6338 VCE= 50V; IB= 0 50 VCE


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PDF 2N6338/6339/6340/6341 2N6338 2N6339 2N6340 2N6341 NPN Transistor VCEO 80V 100V 2N6338 2N6341 Vce(sat) 2N6339 2N6340 6341
diode cc 3053

Abstract: 2N6341 C-48U 2N6338 MIL-PRF19500 3041 v cc 3053
Text: . Maximum safe operating area graph (continuous dc) for types 2N6338 and 2N6341. 13 MIL-PRF , , POWER TYPES 2N6338 AND 2N6341 JAN, JANTX, JANTXV AND JANS This specification is approved for use by , = +100°C W 2N6338 2N6341 PT 1/ 2/ VCBO VCEO VEBO IC IB TSTG and TOP W , 3011 Bias condition D, IC = 50 mA dc Pulsed (see 4.5.1) V(BR)CEO 2N6338 2N6341 Collector to , dc 2N6338 2N6341 VCE = 75 V dc Emitter to base cutoff current 3061 Bias condition D


Original
PDF MIL-PRF-19500/509C MIL-S-19500/509B 2N6338 2N6341 MIL-PRF-19500. 204AA diode cc 3053 2N6341 C-48U MIL-PRF19500 3041 v cc 3053
2001 - 1N4933

Abstract: 2N6338 2N6341
Text: ON Semiconductort High-Power NPN Silicon Transistors 2N6338 2N6341 * . . . designed for , Collector­Emitter Sustaining Voltage ­ VCEO(sus) = 100 Vdc (Min) ­ 2N6338 = 150 Vdc (Min) ­ 2N6341 · High DC , Voltage 2N6341 120 180 Vdc VCEO Collector­Base Voltage 2N6338 100 150 CASE , , LLC, 2001 May, 2001 ­ Rev. 10 1 Publication Order Number: 2N6338/D 2N6338 2N6341 ÎÎÎ , Sustaining Voltage (1) (IC = 50 mAdc, IB = 0) 2N6338 2N6341 Collector Cutoff Current (VCE = 50 Vdc


Original
PDF 2N6338 2N6341* 2N6341 r14525 2N6338/D 1N4933 2N6338 2N6341
1995 - 2N6339

Abstract: motorola 2n6338 2N6338 2N6340 20Vdc 1N4933 2N6341 2N6436 2N6338-D
Text: Silicon Transistors 2N6338 2N6339 2N6340 2N6341 * . . . designed for use in industrial­military , 2N6340 VCEO(sus) = 150 Vdc (Min) - 2N6341 · High DC Current Gain - hFE = 30 ­ 120 @ IC = 10 Adc hFE , Collector­Emitter Voltage Symbol 2N6338 2N6339 2N6340 2N6341 Unit VCB VCEO 120 140 , ) 2N6338 2N6339 2N6340 2N6341 ICEO 2N6338 2N6339 2N6340 2N6341 Collector­Emitter Sustaining , CHARACTERISTICS (TC = 25_C unless otherwise noted) 2N6338 2N6339 2N6340 2N6341 r(t), EFFECTIVE TRANSIENT


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PDF 2N6338/D 2N6338 2N6339 2N6340 2N6341* 2N6341 2N6436 2N6339 motorola 2n6338 2N6338 2N6340 20Vdc 1N4933 2N6341 2N6338-D
2n6338 MOTOROLA

Abstract: No abstract text available
Text: ) - 2N6339 = 140 Vdc (Min) - 2N6340 = 150 Vdc (Min) - 2N6341 · High DC Current Gain - hpE = 30 - , 100 2N 6339 140 120 2N6340 160 140 2N6341 180 150 Unit Vdc Vdc Vdc Adc CASE 1-07 TO , 7 © Motorola, Inc. 1995 (M) M O T O R O L A 2N6338 2N6339 2N6340 2N6341 , cto r-E m itte r Sustaining Voltage (1) (Iq = 50 mAdc, lg = 0) 2N6338 2N6339 2N6340 2N6341 2N6338 2N6339 2N6340 2N6341 'CEX - - 'CBO 'EBO - - 10 1.0 10 100 |lA dc m Adc |iA dc |lA dc VCEO(sus) 100


OCR Scan
PDF 2N6338/D 2N6338 2N6339 2N6340 2N6341 2N6436-38 2n6338 MOTOROLA
diode cc 3053

Abstract: JANTX 2N6341 BUT 509D 2N6338 2N6341 2N6437 2N6438 C-48U 509D cc 3053
Text: . Maximum safe operating area graph (continuous dc) for types 2N6338 and 2N6341. 13 MIL-PRF , , POWER, TYPES 2N6338 AND 2N6341 , JAN, JANTX, JANTXV, AND JANS This specification is approved for use , W 2N6338 2N6341 PT (1) (2) RJA RJC (3) VCBO VCEO VEBO IC IB TSTG and , 2N6338 2N6341 Collector to emitter cutoff current V dc V dc 100 150 3041 Bias condition D , ) 1.8 V dc VCE = 50 V dc 2N6338 2N6341 VCE = 75 V dc Emitter to base cutoff current


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PDF MIL-PRF-19500/509D MIL-PRF-19500/509C 2N6338 2N6341, MIL-PRF-19500. diode cc 3053 JANTX 2N6341 BUT 509D 2N6341 2N6437 2N6438 C-48U 509D cc 3053
2006 - 1N4933

Abstract: 2N6338 2N6341
Text: ON Semiconductort High-Power NPN Silicon Transistors 2N6338 2N6341 * . . . designed for , Collector-Emitter Sustaining Voltage - VCEO(sus) = 100 Vdc (Min) - 2N6338 = 150 Vdc (Min) - 2N6341 · High DC , 2N6338 2N6341 Unit VCB 120 180 Vdc VCEO 100 150 Vdc VEB Collector , ) Symbol 2N6338 2N6341 Collector Cutoff Current (VCE = 50 Vdc, IB = 0) (VCE = 75 Vdc, IB = 0) 2N6338 2N6341 Max Unit VCEO(sus) 100 150 - - Vdc - - 50 50 - -


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PDF 2N6338 2N6341* 2N6341 2N6338/D 1N4933 2N6338 2N6341
JAN 2N6339

Abstract: 2N6338
Text: superior switching speed. The 2N6338 and 2N6341 are available as JAN, JA N TX and JANTXV, supplied to M IL , (1) Pd O perating and Storage Junction T Jlopsrl -fiS tr, + OiYi Tem perature Range T*|g 2N6341 , . SYMBOL PART NO. Max Min CO ND ITIO NS 100 lc = 50mA (3) 2N6338 Veto Ih I 2N6339 120 140 2N6340 2N6341 150


OCR Scan
PDF 2N6338 2N6341 2N6339 2N6340 JAN 2N6339
2N6340

Abstract: No abstract text available
Text: 2N6338 = 120 Vdc (Min) - 2N6339 = 140 Vdc (Min) - 2N6340 = 150 Vdc (Min) - 2N6341 High DC Current Gain , EB 'c 2N6338 120 100 2N6339 140 120 2N6340 160 140 2N6341 180 150 Unit Vdc Vdc , value. REV 7 M otorola, Inc. 1995 ($J M O T O R O L A 2N6338 2N6339 2N6340 2N6341 ` , Motorola Bipolar Power Transistor Device Data 2N6338 2N6339 2N6340 2N6341 t, TIME (ms) Figure 4 , 2N6341 PACKAGE DIMENSIONS F x r- M J U - D 2 PL 0 l £ t SEATING PLANE NOTES: 1. D IM E N


OCR Scan
PDF 2N6338/D 2N6338 2N6339 2N6340 2N6341 2N6340
2001 - equivalent to tip162

Abstract: 2SA1046 2N3055 BU108 2n6258 BU326 BU100 BD262 buv23 2n5632
Text: (sus) = 140 Vdc (Min) - 2N6340 VCEO(sus) = 150 Vdc (Min) - 2N6341 · High DC Current Gain - hFE = 30 , Emitter­Base Voltage Collector Current Continuous Peak Base Current 2N6338 2N6339 2N6340 2N6341 * *Motorola , ÎÎÎÎÎÎÎÎÎÎÎÎ ÎÎÎÎÎ ÎÎÎÎÎÎ ÎÎÎ Symbol VCB VCEO VEB IC 2N6338 120 100 2N6339 140 120 2N6340 160 140 2N6341 180 , 2N6339 2N6340 2N6341 *ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted) Characteristic OFF , 2N6340 2N6341 2N6338 2N6339 2N6340 2N6341 VCEO(sus) 100 120 140 150 - - - - - - - - - - - -


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PDF 2N6338 2N6339 2N6340 2N6341 2N6436 Continu32 TIP73B TIP74 TIP74A TIP74B equivalent to tip162 2SA1046 2N3055 BU108 2n6258 BU326 BU100 BD262 buv23 2n5632
semelab 2N6287

Abstract: 2N6378E
Text: SEMELAB pic - SELECTOR GUIDE DISCRETE BI-POLAR DEVICES Type_No 2N6270 2N6271 2N6274 2N6274A 2N6275 2N6275A 2N6276 2N6276A 2N6277 2N6277A 2N6278 2N6279 2N6280 2N6281 2N6282 2N6283 2N6284 2N6285 2N6286 2N6287 2N6294 2N6295 2N6296 2N6297 2N6298 2N6299 2N6300 2N6301 2N6302 2N6303 2N6306 2N6307 2N6308 2N6312 2N6313 2N6314 2N6315 2N6316 2N6317 2N6318 2N6322 2N6323 2N6327 2N6328 2N6329 2N6330 2N6331 2N6338 2N6338 CECC 2N6339 2N6339 CECC 2N6339X 2N6339X CECC 2N6340 2N6340 CECC 2N6341 2N6341 CECC 2N6354 2N6354


OCR Scan
PDF 2N6270 2N6271 2N6274 2N6274A 2N6275 2N6275A 2N6276 2N6276A 2N6277 2N6277A semelab 2N6287 2N6378E
Not Available

Abstract: No abstract text available
Text: NEW ENGLAND SEMICONDUCTOR BIPOLAR NPN TRANSISTOR TO-3 PACKAGE NPN TO-3 * Tc = 25°C ’ Typical 6 DEVICE TYPE 2N6032 2N6033 2N6274 2N6275 2N6276 2N6277 2N6322 2N6323 2N6326 2N6327 2N6338 2N6340 2N6341 2N6354 2N6510 2N6511 2N6512 2N6677 2N6678 2N6686 2N6687 2N6688 Ic Vceo (max) (sus) VOLTS AMPS 90 120 100 120 140 150 200 300 60 80 100 140 150 120 200 250 300 350 400 160 180 200 50 40 50 50 50 50 30 30 30 30 25 25 25 10 7 7


OCR Scan
PDF 2N6032 2N6033 2N6274 2N6275 2N6276 2N6277 2N6322 2N6323 2N6326 2N6327
Not Available

Abstract: No abstract text available
Text: 2N6341+JAN Transistors Si NPN Power BJT Military/High-RelY V(BR)CEO (V)150 V(BR)CBO (V)180 I(C) Max. (A)25 Absolute Max. Power Diss. (W)200# Maximum Operating Temp (øC)200õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)150 V(CE)sat Max. (V)1.8 @I(C) (A) (Test Condition)25 @I(B) (A) (Test Condition)2.5 h(FE) Min. Current gain.30 h(FE) Max. Current gain.120 @I(C) (A) (Test Condition)10 @V(CE) (V) (Test Condition)2.0 f(T) Min. (Hz) Transition Freq40M @I(C) (A) (Test Condition)1.0 @V(CE) (V


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PDF 2N6341 Freq40M time300n
2N3265

Abstract: 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 DSASW0036858
Text: Device Type 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 VCEO (V) 90 60 60 80 100 120 140 150 hFE VCE @ IC (A) (sat) Max @ IC (A) Min/Max (V) 20/55 15.0 1.00 20.0 20/80 15.0 1.60 20.0 20/100 10.0 1.00 15.0 20/100 10.0 1.00 15.0 30/120 10.0 1.00 10.0 30/120 10.0 1.00 10.0 30/120 10.0 1.00 10.0 30/120 10.0 1.00 10.0 (MHz) PT MAX (W) 20.0 20.0 4.0 4.0 40.0 40.0 40.0 40.0 100.0 100.0 200.0 200.0 200.0 200.0


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PDF 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 2N3265 2N3266 2N5885 2N5886 2N6338 2N6339 2N6340 2N6341 DSASW0036858
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