2N2824 Search Results

to63

Contextual Info: B440355 SPACE SPACE POWER POWER ELECTRONICS 89C OQ1I2 Hi-Re! PLANAR P O W E R - 2 0 AMP Wk fll ELECTRONICS »E|S4H03SS D00D11E • | ~ FOR Breakdown Voltages TYPE ' 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N2819 2N2820 2N2821 2N2822 2N2823 2N2824 2N2825

2N3017

Contextual Info: SILICON NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type 2N2812 2N2813 2N2814 2N2815 2N2816 2N2817 2N2818 2N2819 2N2821 2N2822 2N2823 2N2824 2N2825 2N2858 2N2859 2N2877 2N2878 2N2879 2N2880 2N2881 2N2882 2N2892 2N2893 2N2911 2N2983 2N2984

to63

Contextual Info: B440355 SPACE SPACE POWER POWER ELECTRONICS 89C OQ1I2 Hi-Re! PLANAR P O W E R - 2 0 AMP Wk fll ELECTRONICS »E|S4H03SS D00D11E • | ~ FOR Breakdown Voltages TYPE ' 2N1936 2N1937 2N2815 2N2816 2N2817 2N2818 2N2819 2N2820 2N2821 2N2822 2N2823 2N2824 2N2825

Contextual Info: r le = 30 AMPS DEVICE TYPE VOLTS BV ebo VOLTS P0 @ 100°C WATTS 80 100 150 80 100 80 100 150 80 100 6.0 6.0 6.0 8.0 8.0 TO-63 TO-3 80 80 80 80 TO-3 200 250 PACKAGE BVceo VOLTS 2N4003 TO-63 TO-63 TO-63 TO-63 TO-63 2N5733 2N5734 2N2823 2N2824 2N2825 2N4002 ^XG SR 50020

4116 2n

Abstract: j 5804 2N3920 tr j 5804 4116-2n 2N3619 2N375 N5339 2N2891 2n3442
Contextual Info: DEVICE NUMBER INDEX i PAGE N O. NO. P AGE PAGE NO. 11 2N2851-3 13 2N3022 2N1253 11 2N2852 13 2N3023 2N1506 11 2N2852-1 13 2N1506A 11 2N2852-2 2N1714 11 2N1252 2N1721 n 11 11 11 11 11 11 2N1724 18 2N1724A 2N1715 2N1716 2N1717 2NI718 2N1719 2N1720 DEVI CE DE VI CE

2N2824

Abstract: 2N2819 2N2771
Contextual Info: electronics inc POWER TRANSISTORS TYPE NO. 2N2757 200 MAXIMUM RATINGS Ic B V cbo BVcto BVteo V A V V 50 50 15 30 Ic A Vce V Test Sat Voltages Conditions V be Ic le lEBO V ce A A ma V V 10 4 1.5 a> hFE MIN MAX 10 2.5 10 2 25 2 25 2N2758 200 100 100 15 30 10

2N2753

Abstract: S1482 JAN2N1480 jantx 2N2771 2N2034 jan2n1482 2N2580M 2n2110
Contextual Info: IN D EX Type No. 2N389 2N389A 2N424 2N424A 2N1015 2N1015A 2N1015B 2N1015C 2N1015D 2N1015E 2N1015F 2N1016 2N1016A 2N1016B 2N1016C 2M 016D 2N1016E 2N1016F 2N1047 2N1047A 2N1047B 2N1048 2N1048A 2N1048B 2N1049 2N1049A 2N1049B 2N1050 2N1050A 2N1050B 2N1067 2N1068

2N3106

Abstract: 2N4146 2N4148
Contextual Info: discrete devices | jEmitronicr hot line TOLL FREE NUMBER 800-777-3960 thyristors and triggers silicon controlled rectifiers Type •Note 1 Forward Current If (Amps) Max. Forward M ai. Reverie Voltages Vfom /V rom (volts) (Note 2) Maximum Junction Temperature

2N1016

Abstract: 2N1015C STA3265 2N2229 2N1015 2N1015A 2N1015B 2N1015D 2N1015E STA9760
Contextual Info: Silicon power transistors NPN TO-61 isolated collector (contad) lc | M A X ) Il FE IC/VCE VcEO(SUS| (Min-Max Tvp e# (Volts) @ A/V) STA9760 10-200 10/4 225 STA9761 300 10-200@ 8/4 10-200@5/4 STA 9762 350 VCE|S*T| @ Ic/Ib (V <a A/A) 2@ 10/1 2 @ 8 /.8

2N5330

Abstract: 2N5672 2N6258 2N2823 2N2824 2N2825 2N3265 2N3266 2N3771 2N3846
Contextual Info: - 18 l i j j i l E LE C T R O N IC S , INC. COLLECTOR CURRENT = 25 AMPS NPN TYPES Device No Case v CBO Volts 2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 TO-63 TO-63 TO-3 TO-3 TO-3 TO-3 150 85 120 140 160 180 VCEO sus Volts 90 60 100 120 140 150 Veb o Volts

LM3661TL-1.25

Contextual Info: POWER TRANSISTORS TYPE NO. TO-63 PT @ 25°C Watts MAXIMUM RATINGS B V c bo B V ceo B V ebo le V A V V Sat Voltages 3> hFE MIN MAX le A V ce VCE V be V V V Test Conditions le Ib A A lEBO ma 2N2757 200 50 50 15 30 10 10 4 1.5 2.5 10 2 25 2N2758 200 100 100 15

2N5330

Contextual Info: 18 u J j i Ê ELE C TR O N IC S , INC. COLLECTOR CURRENT = 25 AMPS NPN TYPES D evice No C ase v CBO V olts 2N3265 2N3286 2N6338 2N6339 2N6340 2N6341 TO -63 TO-63 TO-3 TO - 3 TO-3 TO-3 150 85 120 140 160 180 hFF v EBO V olts ""OTn" Max VCEO V olts 90 60 100

2N2772

Abstract: 2n2770
Contextual Info: POWER TRANSISTORS Sat Voltages PT TYPE NO. @ 25°C Watts h FE M A X I M U M R A T IN C S Ic B V c b c BV ceq B V e b o V V V A i> M IN M AX Ic A Test Conditions Vet V be Ic Ib lEBO V V V A A ma r VCE 2N2757 200 50 50 15 30 10 10 4 1.5 2.5 10 2 25 2N2758 200

2N2094

Abstract: 2N2096 2N2916 2N2640 2N2021 2N2914 2N2604 2N2605 2N2639 2N2641
Contextual Info: MfiE D • 0133107 DDG0434 E5b M S N LB se m e la b :SEMELAB LTD T M . V Q / BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2N2604 2N2605 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2815 2N2816 2N2817 2N2818 2N2819 2N2820 2N2821

1n52408

Abstract: 1N52428 zener SFC2311 78M12HM 21L02A 54175 IRS 9530 transistor 10116dc BB105G 962PC
Contextual Info: Contents Fairchild Semiconductors Ltd. Solid State Scientific Inc. Diodes Ltd. Thomson C. S. F. B Ashcroft Electronics Ltd. Sprague Electric UK Ltd. Precision Dynamic Corp. B&R Relays Schrack Relays Heller mann Electric B Foreword We are pleased to present the latest edition of the BARLEC Catalogue, which

MC2259

Abstract: MC880P MC9713P mc2257 1N4003 germanium diode specification 2N1256 S P 1N4465 MC9802P MC9718P 3N214
Contextual Info: Semiconductor Data Library Master Index prepared by Technical Information Center The information in this book has been carefully checked and is believed to be reliable; however, no responsibility is assumed for inaccuracies. Furthermore, this information does not convey to the

RCA SK CROSS-REFERENCE

Abstract: CD4003 2N2505 TF408 1N4465 250PA120 2N3017 pt 3570 trw rf pa189 Semicon volume 1
Contextual Info: 1969 o < 00 x ic e uo <r\ *—4 rO O CM u J 'r < o o o CO r aJ. rfrr.~> y -< z X— < P“ -J Sem iconductor Annual At .0008" Dia. . . . there is no second source phire orifice insert. Tempress also created and supplied the tungsten carbide ultrasonic bonding tool and pioneered

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

Contextual Info: - 18 l i j j i l E LE C T R O N IC S , INC. COLLECTOR CURRENT = 25 AMPS NPN TYPES Device No Case v CBO Volts 2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 TO-63 TO-63 TO-3 TO-3 TO-3 TO-3 150 85 120 140 160 180 VCEO sus Volts 90 60 100 120 140 150 Veb o Volts

2N2823

Abstract: 2N2824 2N2825 2N3265 2N3266 2N3771 2N3846 2N6338 2N6339 2N6340
Contextual Info: I - 18 E i l M l E LE C T R O N IC S , INC. COLLECTOR CURRENT = 25 AMPS NPN TYPES Device No Case v CBO Volts 2N3265 2N3266 2N6338 2N6339 2N6340 2N6341 TO-63 TO-63 TO-3 TO-3 TO-3 TO-3 150 85 120 140 160 180 VCEO sus Volts 90 60 100 120 140 150 Veb o Volts

Contextual Info: se m e la b : MfiE D • 0133107 DDG0434 E5b M S N LB SEMELAB LTD TM.VQ/ BI-POLAR TRANSISTORS CECC AND HIGH REL & HIGH ENERGY HI-REL Type Number 2N2604 2N2605 2N2639 2N2640 2N2641 2N2642 2N2643 2N2644 2N2815 2N2816 2N2817 2N2818 2N2819 2N2820 2N2821 2N2822

2N2818

Abstract: 2N2757 2N2758 2N2759 2N2760 2N2761 2N2763 2N2764 2N2765 2N2766
Contextual Info: POWER TRANSISTORS TYPE NO. PT @ 25°C Watts MAXIMUM RATINGS B V c bo B V ceo B V ebo Ic V A V V Sat Voltages 3> hFE MIN MAX Test Conditions Ic A V ce VCE V be Ic Ib lEBO V V V A A ma 2N2757 200 50 50 15 30 10 10 4 1.5 2.5 10 2 25 2N2758 200 100 100 15 30 10

NPN 200 VOLTS 20 Amps POWER TRANSISTOR

Abstract: 2N3021 2n3223 2N3589 NPN 20 Amps POWER TRANSISTOR to63 MT27 NPN 90 Amps POWER TRANSISTOR to63 2N3025 2NXXXX TO63 package
Contextual Info: r ^ 3 *t3 SILICON TRANSISTOR C O R P _ 8 8 0 0 0 7 9 2 DE lflES40ea O O O O T T S b flfl NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS Continued Type Polarity lcMax Amps VCECKSUS) Volts Package Type Polarity . ^ 33^77 lc Max Amps VCEO(SUS)

Contextual Info: e l e c t r o n i c s in c . SECTION 2 COLLECTOR CURRENT = 25 AMPS NPN TYPES Device No Case VcBO Volts 2N3265 2N3266 2N6338 2N6339 2N634Û 2N6341 TO -63 TO-63 TO-3 TO-3 TO-3 TO-3 150 85 120 140 160 180 v CEO su s Volte Ve b o Volts 7 7 6 6 6 6 90 60 100