2N1049 Search Results

2N1050A

Abstract: T 3036 2N1047A 2N1049A 2N1048A 2n1048 2N1049
Contextual Info: MIL I C | 000D12S DDDaDfl? T | SPECS M I L - S - l9 5 0 0 /1 7 6B 13 December 1971 SUPERSEDING M IL -S -1 9 5 0 0 /1 7 6A 10 N ovem ber 1965 MILITARY SPECIFICATION SEMICONDUCTOR DEVICE, TRANSISTOR, NPN, SILICON, POWER TYPES 2N1047A, 2N1048A, 2N1049A AND 2N1050A

IC HXJ 2038

Abstract: 1N52398 DB5T tfk 102 cny 70 hxj 2038 rca 40361 transistor rca 40362 TFK 680 CNY 70 Diode Equivalent 1N34A 2n5952 equivalent
Contextual Info: The Engineering Staff of TEXAS INSTRUMENTS INCORPORATED Components Group The T ransistor and Diode Data Book for Design Engineers T e x a s In s t r u m e n t s IN CO RPO RATED TYPE NUMBER INDEX GLOSSARY TRANSISTOR SELECTION GUIDES TRANSISTOR INTERCHANGEABILITY

Contextual Info: , One. ^E.mL-Conducto'i LPi TELEPHONE: 973 376-2922 (212)227-6005 FAX; (973) 376-8960 20 STERN AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. POWER TRANSISTORS PT I 1 TYPE NO. MAXIMUM RATINGS ff%TO^ V hri ^M BvB^T V A •""W"^fc &tf Ic MfN MAX A Vet V Sat

2SC114

Abstract: transistor 2SC114 t056 2SC114 transistor transistor t08 TRANSISTOR 2sc107 TQ59A transistor bdy88 BDY88 2SC109
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C I I MIN. MAX Pc T6TT I DERATE FREE I'A E I

2N1208

Abstract: 2N1209 2N1212 2N1616 2N1616A 2N1617 2N1617A 2N1618 2N1724 2N2101
Contextual Info: POWER TRANSISTORS A Sat Test Voltages Conditions * 7 7 * hTM m m mrm lir a y y V A A ma 80 6 .5 12 36 .5 10 7.5 6.0 .5 .250 120 120 6 .5 12 36 .5 10 7.5 6.0 .5 .250 40 80 80 6 .5 30 90 .5 10 7.5 6.0 .5 .250 120 6 .5 30 90 .5 10 7.5 6.0 .5 .1 .250 12 36 .5

TO82 TRANSISTOR

Abstract: TO82 2N2227
Contextual Info: ^ ^ ^ 2 5 4022 CIL ICON T R A N S I S T O R C O RP öö NUMERICAL INDEX TO INDUSTRIAL GRADE POWER TRANSISTORS „ . 6 Ô D 00791 7"j 3 3 V / 3 " DE | ù 25MQSa 00007=11 M J ' ^ T g ^ T p f Polarity leMax Amps VCECHSUS Volts 2N1015 2N1015A 2N1015B 2N1015C

2N1047

Abstract: 2N1047B 2N1050B 1049B 2N1050 2n1050a 10S0B 250PA120 2N1049 lc 5012 m
Contextual Info: TYPES 2N1047 THRU 2N1050 2N1047A THRU2N1050A, 2N1047B THRU 2N1050B N-P-N TRIPLE-DIFFUSED PLANAR SILICON POWER TRANSISTORS Sr 3m m vi FOR POWER-AMPLIFIER AND HIGH-SPEED-SWITCHING APPLICATIONS Z at V CE = 40 V, Tc = O 9 5 • Dissipation Capability in excess of 22 W

t056

Abstract: RE3797 2SA327 B5022 bly89 ST54
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 19 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors LINE No. t - 40°c k I B H H TYPE No. ABSOiLOTE MAX. RATIINGS Ä 2 5 C MAX. 1 hFE I I MIN. MAX Pc T6TT

t056

Abstract: BLY93 2SC765 BDY88 BDY89 MSA8508 RE3797 SE3030 SJ 96 B5022
Contextual Info: SYMBOLS & CODES EXPLAINED 7. "N ” Channel - SILICON FIELD EFFECT TRANSISTORS 8. GERMANIUM P N P 1 9 GERMANIUM NPN110. SILICON PNP 11. SILICON NPN High Power Transistors k I B L IN E No. H H TYPE N o. I I M IN . M A X P c ID E R A T E FREE A IR @ J to C 2 5 'C