10N12 Search Results

Contextual Info: IGBT with Diode IXSH 10N120AU1 SCSOA Capability Sym bol T e st C o n d itio n s v CES v CGR T = 25oCto150°C TJ = 25°C to 150°C; RGE= 1 MQ v v GEM Continuous T ransient ^C25 ^C90 *CM Tc = 25°C Tc = 90°C Tc = 25°C, 1 ms SSOA RBSOA VGE = 15 V, Tj= 125°C, Hg= 150 O

10N120AU1

Abstract: 10n120
Contextual Info: PIXYS IGBT with Diode IXSH 10N120AU1 U = 2 0 A VCES = 1200 V VCE sa„ = 4.0 V Short Circuit SOA Capability Symbol Test C onditions VCES V *C G R ^ = 25°C to 150°C T,J = 25°C to 150°C; FL.= 1 Mi2 C3E v v GEH Continuous T ransient ^C90 'c Tc = 25°C Tc = 90°C

10N120BND

Abstract: 10n120bnd equivalent
Contextual Info: 10N120BND Semiconductor J an u ary 1999 D ata S h eet 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 10N120BND is a Non-Punch Ih ro u g h IGBT design. This is a new mem ber of the MOS gated high voltage switching IGBT family. IGBTs com bine the best

10N120BN

Contextual Info: 10N120BN, 10N120BN, 10N120BNS Semiconductor Data Sheet January 1999 35A, 1200V, NPT Series N-Channel IGBT Features The 10N120BN, 10N120BN and 10N120BNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high

10n120

Abstract: 25n120 IGBT DRIVER SCHEMATIC IC IGBT 25N120 gate driver igbt 10N120 25N120 IC IGBT 15N120 15N120 IC IGBT 25N120 600VIc 25A120
Contextual Info: MOTOROLA Order this document by 10N120/D SEMICONDUCTOR TECHNICAL DATA Hybrid Power Module 10N120 MHPM6B15N120 MHPM6B25N120 SERIES Integrated Power Stage for 460 VAC Motor Drives These modules integrate a 3–phase inverter in a single convenient package. They are designed for 2.0, 3.0, and 5.0 hp

TFK 404

Abstract: T1S58 BCI83L Germanium diode OA 182 TFK diode transistors 2n 945 v744 akai amplifier tis62 BCI09
Contextual Info: S IL IC O N T R A N S IS T O R S PN P Fast Switches N PN Fast: Switches D e v ic e B S X 27 T IS 4 4 T IS 45 T IS 46 T IS 47 T IS 48 T IS 49 Page 96 166 168 170 172 172 174 D e v ice Page T I S 51 T IS 52 T IS 55 2N 706A 2N 708 2N 753 2N 914 178 180 185 317

EATON CM20A

Abstract: A5 GNE mosfet Hall sensor 44e 402 2N8491 FTG 1087 S TRIAC BCR 10km FEB3T smd transistor marking 352a sharp EIA 577 sharp color tv schematic diagram MP-130 M mh-ce 10268
Contextual Info: Table of Contents N E W A R K E L E C T R O N IC S “Where serving you begins even before you call” Newark Electronics is a UNIQUE broadline distributor of electronic components, dedicated to provid­ ing complete service, fast delivery and in-depth inventory. Our main

TP10N15L

Abstract: 10N12L 10N15L TO-220AB Package P10N15L TP10N12L TP10N12 158SC
Contextual Info: MOTOROLA SC IME D XSTRS/R F I fc.3 t,?a54 QG1 QD3 ci 0 1 7V 3 7 -1 / MOTOROLA • SEM ICO NDUCTOR TECHNICAL DATA M TM 10N 12L M TM 10N 15L MTP10IM12L M T P 10N 15L Designer's Data Sheet Pow er Field Effect Transistors N-Channel Enhancement-Mode Silicon Gate TMOS

B1116

Abstract: b1104 16N60 N60A B1118 10N120 B1102 B1126 24n60 35N120U1
Contextual Info: PIXYS SCSOAIGBTS-Series Contents IGBT •J v CES •> max < Tc = 25 °C V TO-220 IXSP TO-263 (IXSA) TO-247(IXSH) TO-2680XST) miniBLOC (IXSN) Page j? > > IXSA 16N60 IXSP 16N60 1.8 1.8 48 50 75 * 2.2 2.5 2.5 IXSH 24N60 IXSH 30N60 IXSH 40N60 B1-12 B1-20 B1-40

10N120BN

Abstract: G10N120BN ta49290 T0263AB
Contextual Info: 10N120BN, 10N120BN, 10N120BNS S em iconductor January 1999 Data Sheet 35A, 1200V, NPT Series N-Channel IGBT Features The 10N120BN, 10N120BN and 10N120BNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high

10n capacitor

Abstract: 10n05 10n12 10N241 powersystems 10N-2410 100uF-50V
Contextual Info: DC/DC Converter TSI-10N Series 10 Watt Features Step-down Switching Regulator with very high Efficiency Adjustable Output 1.8 – 3.3 VDC or 3.0 – 5.0 VDC Remote ON/OFF Overload Protection Low Output Noise Standby Current only 100 µA Small SIL-Package 2 Year Product Warranty

10n capacitor

Abstract: 10N241 TSI 10N-0510D
Contextual Info: DC/DC Converter TSI-10N Series 10 Watt Features Step-down Switching Regulator with very high Efficiency Adjustable Output 1.8 – 3.3 VDC or 3.0 – 5.0 VDC Remote ON/OFF Overload Protection Low Output Noise Standby Current only 100 µA Small SIL- or DIL-Package

MTP8P20

Abstract: MTP10N10M MTP8N18 MTP7N18 MTP7N20 MTP7P05 MTP7P06 MTP8N08 MTP8N10 MTP8N12
Contextual Info: M € f Ä * Vds or Vd g tí: « A V * £ fê (Ta=25^C) Vg s (V) Id Po * /CH * /CH Ig s s m (A) % S V g s (th) Id s s (nA) Vg s (V) Vd s (V) <UA) Id (nA) (V) (V) fê ÎDs(on) V:r>s= Vg s max min ft '14 CTa=25cC ) ÌD(on) Ciss g fs Coss ft Crss V g s =0 (max)

10n12

Contextual Info: 2.5V/3.3/5V 2.5GHz 1:4 PECL/ECL CLOCK DRIVER WITH 2:1 DIFFERENTIAL INPUT MUX FEATURES DESCRIPTION • Guaranteed AC parameters over temp/voltage: • > 2.5GHz fMAX • < 25ps within-device skew • < 225ps tr/tf time • < 450ps prop delay ■ Low jitter design:

IRFD1Z3 equivalent

Abstract: 8N60 equivalent TP8N20 TP8N10 siemens semiconductor manual What is comparable with IRF 3205 2N6823 irf8408 MTM5N90 designers datasheet smps cook circuit
Contextual Info: The information in this book has been carefully checked and is believed to be accurate; however, no responsibility is assumed for inaccuracies. Motorola reserves the right to make changes with­ out further notice to any products herein to improve reliability, function or design. Motorola does not

Cross Reference power MOSFET

Abstract: irf 3502 mosfet SD500KD irf3203 mosfet irf equivalent book sem 2106 inverter diagram IFR822 Diode BYW 56 BUZ41 equivalent transistor f630
Contextual Info: FAIRCH ILD Power Products Data Book FA IR C H ILD Power Data Book A S chlum berger C om pany 1 9 86/8 7 Power and Discrete Division 1986 Fairchild Semiconductor Corporation Power and Discrete Division 4300 Redwood Highway, San Rafael, CA 94903 415 479-8000 TWX 910-384-4258

10N120BN

Abstract: G10N120 10N120 TA49290 G10N120BN N-channel MOSFET 800v to-247 G10N G10N120b N-channel MOSFET to-247 HGT1S10N120BNS
Contextual Info: 10N120BN, 10N120BN, 10N120BNS Data Sheet January 2000 35A, 1200V, NPT Series N-Channel IGBT Features The 10N120BN, 10N120BN and 10N120BNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best

HGTG10N120BND

Abstract: 10n120bnd mosfet 10N120bnd 10N120 TRANSISTOR 10N120BND 10N120BN TA49302 TA49189 10n120bnd datasheet ge 047 TRANSISTOR
Contextual Info: 10N120BND Data Sheet December 2001 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 10N120BND is a Non-Punch Through NPT IGBT design. This is a new member of the MOS gated high voltage switching IGBT family. IGBTs combine the best

7n60b

Abstract: 35N120u1 ixys dsei 45-12a DSDI 35-12A 20N80 80n06 80n60 VVY 40-16IO1 IXYS CS 2-12 IXFX 44N80
Contextual Info: Alphanumerical Index A AXC-051 AXC-053 AXC-101 AXC-102 AXL-001 AXL-051 AXV-102 C CS 142-12io8 CS 142-16io8 CS 19-08ho1 CS 19-08ho1S CS 19-12ho1 CS 19-12ho1S CS 20-12io1 CS 20-14io1 CS 20-16io1 CS 23-08io2 CS 23-12io2 CS 23-16io2 CS 300-12io3 CS 300-16io3 CS 300-18io3

Contextual Info: IGBT 10N120A IC25 v C ES V CE sat SCSO A Capability Maximum Ratings Symbol Test Conditions VCES VcO R Tj = 25“C to 150°C Tj = 25°C to 150°C; R aE = 1 MQ V v GEM Continuous Transient 'e» T c = 25°C T c = 90°C Tc = 25“C, 1 ms SSOA (RBSOA) V GE = 15 V, Tj= 125°C, Rq = 150 i l

10N120BND

Abstract: mosfet 10N120bnd TRANSISTOR 10N120BND IC IGBT 10N120BND 10n120bnd equivalent TA49290 diode TA49290 ta49302 SEM 238
Contextual Info: 10N120BND Semiconductor D a ta S h e e t J a n u a ry 1999 35A, 1200V, NPT Series N-Channel IGBT with Anti-Parallel Hyperfast Diode The 10N120BND is a Non-Punch Ih ro u g h IGBT design. This is a new mem ber of the MOS gated high voltage switching IGBT family. IGBTs com bine the best

10N15L

Abstract: 10N12L mtp10n12 MTM10N15L p10n15l
Contextual Info: MOTOROLA • i SEM ICO NDUCTOR TECHNICAL DATA M TM 10N 12L M TM 10N 15L M T P 10N 12L M T P 10N 15L Designer's Data Sheet P o w er Field E ffe c t Transistors N-Channel Enhancem ent-M ode Silicon G ate TM O S T h e s e L o g ic L e ve l T M O S P o w e r FETs a re d e s ig n e d fo r h ig h

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

BTS 3900 a

Abstract: BTS 3900 12N60 BTS 3900 l 35N120U1 24n60 52N60A IXSH 35N120AU1 35n120u 35N120AU1
Contextual Info: Insulated Gate Bipolar Transistors IGBT The IGBT is a com bination of bipolar and MOS technologies. The best features of bipolar transistors are merged with the voltage-controlled properties of M OSFETs. A dvantages to the user: • rugged, short-circuit-proof device