G10N Search Results

10N120BN

Contextual Info: G10N120BN, HGTP10N120BN, HGT1S10N120BNS Semiconductor Data Sheet January 1999 35A, 1200V, NPT Series N-Channel IGBT Features The G10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high

Contextual Info: 4 TH IS DRAWING COPYRIGHT IS U N P U B L IS H E D . 2 3 RELEASED BY 1WCO ELECTRONICS CORPORATION. FOR PUBLIC ATIO N LOC D IS T R E V IS IO N S ALL INTERNATIONAL RIGHTS RESERVED. P LTR D E S C R IP TIO N A PR ODUCTION DATE RE LE ASE 03 S EP DWN APVD BJR MKS

g10n60

Contextual Info: SGP02N60 SGD02N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:

g10n60

Abstract: SGB10N60A J-00M SGB10N60A equivalent
Contextual Info: SGB10N60A Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:

10N120BN

Abstract: G10N120BN ta49290 T0263AB
Contextual Info: G10N120BN, HGTP10N120BN, HGT1S10N120BNS S em iconductor January 1999 Data Sheet 35A, 1200V, NPT Series N-Channel IGBT Features The G10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high

G8Z-002

Abstract: G10Z-002 G5Z-003 240v DC motor A1s 46 G8Z-003 DC MOTOR 6-24v
Contextual Info: WILLOW Technologies Sensors Non-Insulated Tilt and Position Switches Tilt switches "make" when the electrode is tilted below horizontal and "break" when tilted above the horizontal. Total travel from "make" to "break" is the "Maximum included angle" shown below. The component

Contextual Info: O rd e r this data sheet by M R F10150H/D MOTOROLA SEMICONDUCTOR TECHNICAL DATA MRF10150H’ Microwave Pulse Power Transistor 150 Watts Peak NPN 1025-1150 MHz CPT0 Designed for 1025-1150 MHz pulse common base amplifiers. • Guaranteed Performance at 1090 MHz

g10n50c1

Abstract: G10N50E1 HGTP10N40E1 50E1 HGTH12N40C1 HGTH12N40E1 HGTH12N50C1 HGTH12N50E1 HGTP10N40C1 HGTP10N50C1
Contextual Info: HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 S E M I C O N D U C T O R 10A, 12A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTH-TYPES JEDEC TO-218AC • 10A and 12A, 400V and 500V EMITTER • VCE ON : 2.5V Max. COLLECTOR • TFI: 1µs, 0.5µs

G10N60A

Abstract: g10n60 SGW10N60A G10N60A DATASHEET SGP10N60A inverter 12 to 220 100w PG-TO-247-3-21 PG-TO-220-3-1 PG-TO-247-3 G10N
Contextual Info: SGP10N60A SGW10N60A Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter PG-TO-247-3 • NPT-Technology for 600V applications offers:

g10n50

Abstract: EM- 534 motor
Contextual Info: HARRIS S E M I C O N D U C T O R H G T D 1 0N 4 0 F1 , HGTD10N40F1S, H G T D 1 0N 5 0 F1 , HGTD 10N 50F1S 10A, 400V and 500V N- Channel I GBTs March 1997 Features Packages HGTD10N40F1, HGTD10NS0F1 JEDEC TO-251 AA • 1 0 A , 4 0 0 V and 500V • V CE ON 2 .5 V M a x .

12N50E

Abstract: 12N50E1 10N50E1 g10n50c1 10N50C1 A 933 S transistors 10N40E1 12N50C1 tp10n40c TP10N40
Contextual Info: r r I i- i a c a m e ; <Ü h g t p i 0N40C1, 40E1, s o c i , 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 o? 10A, 12A, 400V and 500V N-Channel IGBTs A p ril 1 9 9 5 Features Packages H G TH -TY P E S JE D E C TO -218A C • 10A and 12A, 400V and 500V • ^CE ON ’ 2.5V Max.

g10n60

Contextual Info: SGP02N60 SGD02N60 Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:

g10n60

Abstract: SGP10N60A
Contextual Info: SGP10N60A SGW10N60A Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter PG-TO-247-3-21 • NPT-Technology for 600V applications offers:

g10n60

Abstract: Q67040-S4510
Contextual Info: SGP10N60A SGW10N60A Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G • Designed for: - Motor controls - Inverter E PG-TO-247-3-1 TO-247AC

10N120BN

Abstract: G10N120 10N120 TA49290 G10N120BN N-channel MOSFET 800v to-247 G10N G10N120b N-channel MOSFET to-247 HGT1S10N120BNS
Contextual Info: G10N120BN, HGTP10N120BN, HGT1S10N120BNS Data Sheet January 2000 35A, 1200V, NPT Series N-Channel IGBT Features The G10N120BN, HGTP10N120BN and HGT1S10N120BNS are Non-Punch Through NPT IGBT designs. They are new members of the MOS gated high voltage switching IGBT family. IGBTs combine the best

tc 144e

Abstract: 144EK
Contextual Info: Part Marking □Marks are filled with hR ranks EM3 #h n Ranking Inc Ication C ode hFE R anking C ode h R R anking P a rt M a rkin g P a rt No. P ackage P art M arking 1C D P art No. 2SC4082 AD 2SC4818 ACD 2SC 4725 1D D 2SC4063 ADD 2SC 4726 1ED 2S C 4 0 S 4

G10N60A

Abstract: g10n60 G10N60A DATASHEET PG-TO-263-3-2 PG-TO263-3-2 SGB10N60A S025A
Contextual Info: SGB10N60A Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:

150 g35 capacitor

Abstract: 150 g25 capacitor G15CG0R3 Dielectric Laboratories G15CFR NS2R G10BG2R2
Contextual Info: GAP CAPS dielectric laboratories Precision Series Capacitors for Microwave Applications Part Number G 15 BH 100 K 5 P X 10 Product Code Gap Width In Mils Case Size Test Code Material Code Termination Code Capacitance Code Voltage Rating WVDC Tolerance Code

g10n60

Contextual Info: SGB10N60A Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter • NPT-Technology for 600V applications offers:

G10N60A

Abstract: g10n60 G10N60A DATASHEET SGW10N60A SGP10N60A IGBT 1500 igbt 1000v 10A PG-TO-220-3-1 PG-TO-247-3 PG-TO-247-3-21
Contextual Info: SGP10N60A SGW10N60A Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter PG-TO-247-3 • NPT-Technology for 600V applications offers:

DG10N

Abstract: G10N
Contextual Info: Ç l'= L G1V3S lO ld . dO I 133HS L0-¿t8C9-dSV 66-6Z-C N3M1IHID ‘AG 30VH •Z T S 31 Û N V 0 Z 0 0' T XXXX' S 00 ' T XXX' :3~LLLL 10' T X X ' S S O t'-O t-S -O lfl ;XM1 ¿ H I x o a O'd £ C Z 9 - t t6 319 ¡NO S 3 3 N V a T 1 0 1

65e9 transistor

Abstract: transistor 75307D Transistor 65e8 SD MOSFET DRIVE DATASHEET 4468 8 PIN G40N60 RHR15120 equivalent 10n120bnd 76107d transistor 76121D emerson three phase dc motor driver service note
Contextual Info: DUAL DIE POWER MOSFETs TM 1 1-888-INTERSIL or 321-724-7143 | | ID AMPS rDS ON VGE = 10V OHMS rDS(ON) VGE = 5V OHMS rDS(ON) VGE = 2.5V OHMS TYPE MS-012AA (SO-8) MO-153AA (TSSOP-8) 12 3.50 - 0.050 - Dual N RF1K49090 - 12 3.50 - 0.130 - Dual P RF1K49093 - 12

g10n60

Contextual Info: SGP10N60A SGW10N60A Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter PG-TO-247-3-21 • NPT-Technology for 600V applications offers:

G10N60A

Abstract: g10n60 SGW10N60A SGP10N60A
Contextual Info: SGP10N60A SGW10N60A Fast IGBT in NPT-technology C • 75% lower Eoff compared to previous generation combined with low conduction losses • Short circuit withstand time – 10 µs G E • Designed for: - Motor controls - Inverter PG-TO-247-3-21 • NPT-Technology for 600V applications offers: