50E1 Search Results

Contextual Info: NON-ISOLATED DC/DC CONVERTERS 4.5 Vdc - 14 Vdc Input, 0.7 Vdc – 2 Vdc /50 A Outputs Bel Power Inc., a subsidiary of Bel Fuse Inc. February 18, 2011 SLIN-50E1AL RoHS Compliant Rev.A Features • Wide Input Voltage Range  Output Voltage Sequencing  Monotonic Start-up

G20N50c

Abstract: G20N50C1 g20n50 G15N50 intersil 2700 g15n50c1 G20N50E1 HGTH20N50C1 HGTH20N50E1 HGTP15N40E1
Contextual Info: HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1 15A, 20A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTH-TYPES JEDEC TO-218AC • 15A and 20A, 400V and 500V EMITTER • VCE ON 2.5V COLLECTOR • TFI 1µs, 0.5µs GATE COLLECTOR

g10n50c1

Abstract: G10N50E1 HGTP10N40E1 50E1 HGTH12N40C1 HGTH12N40E1 HGTH12N50C1 HGTH12N50E1 HGTP10N40C1 HGTP10N50C1
Contextual Info: HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 S E M I C O N D U C T O R 10A, 12A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTH-TYPES JEDEC TO-218AC • 10A and 12A, 400V and 500V EMITTER • VCE ON : 2.5V Max. COLLECTOR • TFI: 1µs, 0.5µs

SLIN-50E1AL

Contextual Info: NON-ISOLATED DC/DC CONVERTERS 4.5 Vdc - 14 Vdc Input, 0.7 Vdc – 2 Vdc /50 A Outputs Bel Power Inc., a subsidiary of Bel Fuse Inc. February 18, 2011 SLIN-50E1AL RoHS Compliant Rev.A Features • Wide Input Voltage Range • Output Voltage Sequencing • Monotonic Start-up

120C

Abstract: VRP2-50E1A0
Contextual Info: NON-ISOLATED DC/DC CONVERTERS 5 Vdc - 13.8 Vdc Input xRP2-50E1A0 0.6 Vdc - 5.0 Vdc/50 A Output RoHS Compliant Rev.E • Non-Isolated • Output Over-Voltage Shutdown • High Efficiency • OCP/SCP • Fixed Switching Frequency • Low Output Ripple • Low Cost

TO46 lens phototransistor

Abstract: LA12 SLT-50E1A SLT-50E1B SLT-50E1C
Contextual Info: SLT-50E1 Planar Phototransistor Features • Planar NPN phototransistor • Wide acceptance angle • Four sensitivity ranges Emitter 25 min 5.34 Description This planar NPN silicon phototransistor has a response ranging from the visible to the infrared. The package is a modified TO-46 with a clear epoxy

12N50E

Abstract: 12N50E1 10N50E1 g10n50c1 10N50C1 A 933 S transistors 10N40E1 12N50C1 tp10n40c TP10N40
Contextual Info: r r I i- i a c a m e ; <Ü h g t p i 0N40C1, 40E1, s o c i , 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 o? 10A, 12A, 400V and 500V N-Channel IGBTs A p ril 1 9 9 5 Features Packages H G TH -TY P E S JE D E C TO -218A C • 10A and 12A, 400V and 500V • ^CE ON ’ 2.5V Max.

Contextual Info: SLT-50E1 Planar Phototransistor Features • Planar NPN phototransistor • Wide acceptance angle • Four sensitivity ranges Emitter 25 min 5.34 Description This planar NPN silicon phototransistor has a response ranging from the visible to the infrared. The package is a modified TO-46 with a clear epoxy

Contextual Info: NON-ISOLATED DC/DC CONVERTERS 5 Vdc - 13.8 Vdc Input 0.6 Vdc - 5.0 Vdc/50 A Output Bel Power Inc., a subsidiary of Bel Fuse Inc. Jan. 21, 2010 xRP2-50E1Ax RoHS Compliant Rev.H Features •  Non-Isolated Output Over-Voltage Shutdown  High Efficiency 

G20N50c

Abstract: G20N50 g15n50c1 G20N50C1 G15N50 G20N50E1 g15n50c G15N50E1 G15N40C G20N40
Contextual Info: HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1 S E M I C O N D U C T O R 15A, 20A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTH-TYPES JEDEC TO-218AC • 15A and 20A, 400V and 500V EMITTER • VCE ON 2.5V COLLECTOR • TFI 1µs, 0.5µs

kc 637

Contextual Info: HARRIS SEÎIICOND SECTOR m U U HARRIS S E M I C O N D U C T O R bßE » • M3D2271 D O S D n S HGTH12N40C1, 40E1, 50C1, 50E1 HGTM12N40C1, 40E1, 50C1, 50E1 HGTP10N40C1, 40E1, 50C1, 50E1 10A, 12A, 400V and 500V N-Channel IGBTs December 1993 Packages Features

Contextual Info: HARRIS SEIUCOND SECTOR bôE ]> 4 3 G2 E 7 1 WÊ 0 Q S G 2 DS HHAS HGTH20N40C1, 40E1, 50C1, 50E1 HGTM20N40C1, 40E1, 50C1, 50E1 HGTP15N40C1, 40E1, 50C1, 50E1 HARRIS SEMICONDUCTOR 15A, 20A, 400V and 500V N-Channel IGBTs December 1993 Packages Features HGTH-TYPES JEDEC TO-218AC

HGTM20N50

Abstract: HGTM20N
Contextual Info: 3 HARRIS S E M I C O N D U C T O R HGTH20N40C1, 40E1, 50C1, 50E1 HGTM20N40C1, 40E1, 50C1, 50E1 HGTP15N40C1, 40E1, 50C1, 50E1 15A, 20A, 400V and 500V N-Channel IGBTs December 1993 Packages Features • HGTH-TYPES JEDEC TO-218AC TOP VIEW 15A and 20A, 400V and 500V

Contextual Info: NON-ISOLATED DC/DC CONVERTERS 5 Vdc - 13.8 Vdc Input 0.6 Vdc - 5.0 Vdc/50 A Output Bel Power Inc., a subsidiary of Bel Fuse Inc. Jan. 21, 2010 xRP2-50E1Ax RoHS Compliant Rev.H Features •  Non-Isolated Output Over-Voltage Shutdown  High Efficiency 

20N50E1

Abstract: 20N50C g15n50c1 20N50C1 15N50C 15N50C1 15n50e1 20n40c G20N50C1 G15N50E1
Contextual Info: m U A Q D ie lÜ HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1 15A, 20A, 400V and 500V N-Channel IGBTs April 1995 Packages Features H G TH -TY P E S JE D E C TO -218A C • 15A and 20A, 400V and 500V EMrTTER • V CE ON 2 -5 V COLLECTOR • Tp 1jjs, 0.5(is

hgtm

Abstract: HGTM12N40E1
Contextual Info: HGTH12N40C1, 40E1, 50C1, 50E1 HGTM12N40C1, 40E1, 50C1, 50E1 HGTP10N40C1, 40E1, 50C1, 50E1 HARIRIS SEMICONDUCTOR 10A, 12A, 400V and 500V N-Channel IGBTs December 1993 Packages Features HGTH-TYPES JEDEC TO-21BAC TOP VIEW • 10A and 12A, 400V and 500V • V CE ON

g10n50c1

Abstract: G10N50E1 ge 40e1 50E1 HGTH12N40C1 HGTH12N40E1 HGTH12N50C1 HGTH12N50E1 HGTP10N40C1 HGTP10N40E1
Contextual Info: HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 10A, 12A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTH-TYPES JEDEC TO-218AC • 10A and 12A, 400V and 500V EMITTER • VCE ON : 2.5V Max. COLLECTOR • TFI: 1µs, 0.5µs GATE COLLECTOR

ceramic filter W55F

Abstract: murata 55E ceramic filter Murata SF 455 D CFUCF455KD1X-R0 murata ceramic filter 55d TOKO 455KHz filter a 55e w55c CFWLB455KEFA-B0 marking code smd toshiba murata 55D ceramic filter
Contextual Info: Please read CAUTION and Notice in this catalog for safety. This catalog has only typical specifications. Therefore you are requested to approve our product specification or to transact the approval sheet for product specification, before your ordering. P05E10.pdf 01.11.14

Contextual Info: STM8AF6x26/4x/66/68 Automotive 8-bit MCU, with up to 32 Kbytes Flash, data EEPROM, 10-bit ADC, timers, LIN, SPI, I2C, 3 to 5.5 V Datasheet - production data Features • Core – Max fCPU: 16 MHz – Advanced STM8A core with Harvard architecture and 3-stage pipeline

STM8L101F2U6

Abstract: WFQFPN RM0013 ice 8040 STM8L STM8L101 PWM example sTM8l STM8 CPU programming manual stm8l flash 64 Kbytes stm8l101f3
Contextual Info: STM8L101xx 8-bit ultralow power microcontroller with up to 8 Kbytes Flash, multifunction timers, comparators, USART, SPI, I2C Preliminary data Features • Main microcontroller features – Supply voltage range 1.65 V to 3.6 V – Low power consumption Halt: 0.3 µA,

STM8AF6223

Contextual Info: STM8AF6223 STM8AF6223A STM8AF6226 Automotive 8-bit MCU, with up to 8 Kbytes Flash, 1 Kbyte RAM, 640 bytes EEPROM, 10-bit ADC, 3 timers, LINUART, SPI, I²C, 3 to 5.5 V Datasheet - production data Interrupt management •  Nested interrupt controller with 32 interrupts

PJ 3236

Abstract: 50E-12 20E-3 40E-12 OPA2604M
Contextual Info: * OPA2604M OPERATIONAL AMPLIFIER "MACROMODEL" SUBCIRCUIT * "M" IS MULTIPLE POLE/ZERO TOPOLOGY * CREATED 7/8/92 BCB * REV.A * * -* | NOTICE: THE INFORMATION PROVIDED HEREIN IS BELIEVED TO BE RELIABLE;

Contextual Info: MULTILAYER CERAMIC CHIP CAPACITORS Surface Mount Device Down sized ?FEATURES 1. Small in size and wide capacitance range. 2. Temperature characteristic is Y5U in EIA code. Small temperature and DC bias dependency of capacitance. 3. Superior humidity characteristic and long life.

OP295

Contextual Info: AUG 14 1992 ANALOG ► DEVICES Rail-to-Rail Operational Amplifier OP-295 PIN CONNECTIONS FEATURES Rail-to-Rail Output Swing Single-Supply Operation: +3 V to 36 V Low Offset Voltage: 300 J.V Gain Bandwidth Product: 75 kHz High Open-Loop Gain: 1000 V /m V Unity-Gain Stable