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    G20N50 Price and Stock

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    Vishay Intertechnologies SIHG20N50E-GE3

    Transistor: N-MOSFET; unipolar; 500V; 12A; Idm: 42A; 179W; TO247AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    TME SIHG20N50E-GE3 88 1
    • 1 $4.61
    • 10 $3.18
    • 100 $2.17
    • 1000 $1.93
    • 10000 $1.93
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    Avnet Americas SIHG20N50E-GE3 Bulk 45 Weeks 500
    • 1 -
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    • 100 -
    • 1000 $1.59
    • 10000 $1.52
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    Mouser Electronics SIHG20N50E-GE3 1,174
    • 1 $5.07
    • 10 $2.84
    • 100 $2.40
    • 1000 $1.85
    • 10000 $1.85
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    Newark SIHG20N50E-GE3 Bulk 500 500
    • 1 -
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    • 1000 $2.25
    • 10000 $2.14
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    TTI SIHG20N50E-GE3 Tube 1,150 50
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    • 100 $2.34
    • 1000 $1.85
    • 10000 $1.85
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    EBV Elektronik SIHG20N50E-GE3 39 Weeks 25
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    Vishay Siliconix SIHG20N50C-E3

    SIHG20N50C-E3 N-CHANNEL MOSFET TRANSISTOR, 20 A, 500 V, 3-PIN TO-247AC
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    RS SIHG20N50C-E3 Bulk 500
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    • 1000 $3.00
    • 10000 $2.76
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    Harris Semiconductor HGTG20N50C1D

    IGBT-Single 500V 26A 75W TO247
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    Rochester Electronics HGTG20N50C1D 2,939 1
    • 1 -
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    • 100 $6.61
    • 1000 $5.92
    • 10000 $5.57
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    Vishay Intertechnologies SIHG20N50CE3

    POWER MOSFET Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SIHG20N50CE3 275
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    Vishay Siliconix SIHG20N50C

    POWER MOSFET Power Field-Effect Transistor, 20A I(D), 500V, 0.27ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, TO-247AC
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    ComSIT USA SIHG20N50C 100
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    Find more G20N50 price and stock on Findchips.com

    G20N50 Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    G20N50c

    Abstract: g20n50c1d g20n50 50E1D 50C1D G20N40C1D G20N50E1D g20n50c1 HGTH20N50C1D HGTH20N40C1D
    Contextual Info: HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 20A, 400V and 500V JEDEC TO-218AC • VCE ON 2.5V Max. EMITTER COLLECTOR (FLANGE) • TFALL 1µs, 0.5µs


    Original     		hgth20n40c1dhgth20n40e1dhgth20n50c1dhgth20n50e1d+9o-218acg20n50cg20n50c1dg20n5050e1d50c1dg20n40c1dg20n50e1dg20n50c1 PDF

    G20N50c

    Abstract: G20N50C1 g20n50 G15N50 intersil 2700 g15n50c1 G20N50E1 HGTH20N50C1 HGTH20N50E1 HGTP15N40E1
    Contextual Info: HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1 15A, 20A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTH-TYPES JEDEC TO-218AC • 15A and 20A, 400V and 500V EMITTER • VCE ON 2.5V COLLECTOR • TFI 1µs, 0.5µs GATE COLLECTOR


    Original     		hgtp15n40c1hgth20n40c1o-218aco-220ab+11hgth20n40e1hgth20n50c1hgth20n50e1hgtp15n40e1g20n50cg20n50c1g20n50g15n50intersil 2700g15n50c1g20n50e1 PDF

    G20N50c

    Abstract: g20n50c1d g20n50 g20N50c1 HGTG20N50 HGTG20N50C1D 20A igbt IGBT Drivers Transistors ACT10 AN7254
    Contextual Info: G20N50C1D 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A, 500V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time < 500ns GATE COLLECTOR BOTTOM SIDE METAL • High Input Impedance


    Original     		hgtg20n50c1do-247500ns150oc+9g20n50cg20n50c1dg20n50g20n50c1hgtg20n5020a igbtigbt drivers transistorsact10an7254 PDF

    G20N50c

    Abstract: g20n50c1d mosfet 20a 300v g20n50 ic tb 810 datasheet HGTG20N50C1D g20N50c1 HGTG20N50 20A igbt an7254
    Contextual Info: G20N50C1D S E M I C O N D U C T O R 20A, 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode April 1995 Features Package • 20A, 500V JEDEC STYLE TO-247 EMITTER • Latch Free Operation COLLECTOR • Typical Fall Time < 500ns GATE COLLECTOR BOTTOM SIDE


    Original     		hgtg20n50c1do-247500ns150oc+11an7254an7260100ocg20n50cg20n50c1dmosfet 20a 300vg20n50ic tb 810 datasheetg20n50c1hgtg20n5020a igbt PDF

    G20N50c

    Abstract: g20n50c1d g20n50 g20N50c1 G20N40 igbt 400V 20A "Power Diode" 500V 20A power Diode 400V 20A G20N50E1D HGTH20N50E1D
    Contextual Info: S E M I C O N D U C T O R HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, HGTH20N50E1D 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 20A, 400V and 500V JEDEC TO-218AC • VCE ON 2.5V Max. EMITTER COLLECTOR


    Original     		hgth20n40c1dhgth20n40e1dhgth20n50c1dhgth20n50e1d+11o-218ac150ocg20n50cg20n50c1dg20n50g20n50c1g20n40igbt 400v 20apower diode" 500v 20apower diode 400v 20ag20n50e1d PDF

    G20N50c

    Abstract: G20N50 g15n50c1 G20N50C1 G15N50 G20N50E1 g15n50c G15N50E1 G15N40C G20N40
    Contextual Info: HGTP15N40C1, 40E1, 50C1, 50E1, HGTH20N40C1, 40E1, 50C1, 50E1 S E M I C O N D U C T O R 15A, 20A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTH-TYPES JEDEC TO-218AC • 15A and 20A, 400V and 500V EMITTER • VCE ON 2.5V COLLECTOR • TFI 1µs, 0.5µs


    Original     		hgtp15n40c1hgth20n40c1o-218aco-220ab+14hgth20n40e1hgth20n50c1hgth20n50e1hgtp15n40e1g20n50cg20n50g15n50c1g20n50c1g15n50g20n50e1g15n50cg15n50e1g15n40cg20n40 PDF