50E1D Search Results

HGTH12N40C1D

Abstract: HGTH12N40E1D HGTH12N50C1D HGTH12N50E1D G12N40E1D
Contextual Info: HGTH12N40C1D, HGTH12N40E1D, HGTH12N50C1D, 50E1D 12A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 12A, 400V and 500V JEDEC TO-218AC • VCE ON : 2.5V Max. EMITTER • TFALL: 1µs, 0.5µs COLLECTOR

G20N50c

Abstract: g20n50c1d g20n50 50E1D 50C1D G20N40C1D G20N50E1D g20n50c1 HGTH20N50C1D HGTH20N40C1D
Contextual Info: HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, 50E1D 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 20A, 400V and 500V JEDEC TO-218AC • VCE ON 2.5V Max. EMITTER COLLECTOR (FLANGE) • TFALL 1µs, 0.5µs

10N40E

Abstract: 10n40e1d HGTP10N40E1D HGTP10N40C1D HGTP10N50C1D HGTP10N50E1D ls25 diode diode OA-75
Contextual Info: bSE HARRIS SEtllCOND SECTOR H A R R I S S E M I C O N D U C T O R 1> Bfl M 3G 22 71 005D2b4 850 H H A S HGTP10N40C1D, HGTP10N40E1D HGTP10N50C1D, 50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Package Features

pic 16 f 888

Abstract: 12N50c
Contextual Info: CU H A R R IS HGTH12N40C1D, HGTH12N40E1D, HGTH12N50C1D, 50E1D S E M I C O N D U C T O R 12A, 400V and 500V N-Channel IG B T s with Anti-Parallel Ultrafast D iodes Aprii 1995 Features Package • 12A, 400V and 500V J E D E C TO-218AC • V C E O N : 2 -5 V M a x • T FALL: 1 m s , 0 .5 ^ 8

20n60b3d

Abstract: 20N60B3 12n50e 12N60D1D 20N50C1D 12n60d1c 6N50E1D 12N50E1D gtp10n tp10n40c
Contextual Info: HARRIS IGBT PRODUCT LINE Selection Guide co co IGBTs co HARRIS IGBT PRODUCT LINE Continued Selection Guide NO TE S: 3 -4 1 • 'c 9 0 = m axim um continuous current rating at T c = +90°C. 2. ! q M = m axim um pulsed current rating. 3. t F m easured a t Tc = +150°C.

10n50c1d

Abstract: 10N50E1D 10N40E ultrafast diode 10a 300v 50E1D 10N50E1 400v 5A 1Y 10N40C1
Contextual Info: m l-L A J R F R IS tip s E M , c o N D u c T o R HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, 50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Aprii 1995 Features Package • 10A, 400V and 500V JEDEC TO-22QAB • ^CE ON ' 2.5V Max.

HGTH12N40E1D

Abstract: HGTH12N40C1D HGTH12N50C1D HGTH12N50E1D 50uh
Contextual Info: HGTH12N40C1D, HGTH12N40E1D, HGTH12N50C1D, 50E1D S E M I C O N D U C T O R 12A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 12A, 400V and 500V JEDEC TO-218AC • VCE ON : 2.5V Max. EMITTER • TFALL: 1µs, 0.5µs

Diode LT 443

Abstract: diode lt 823 948 LG DIODE gep 45 diode 100A-4V HGTP10N40C1D
Contextual Info: rjn HARRIS VMJ s e m i c o n d u c t o r HGTP10N40C1D, HGTP10N40E1D HGTP10N50C1D, 50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Package Features JE D E C TD-220AB • 10 Amp, 400 and 500 Volt T O P VIEW • V c e o n 2.5V Max.

10n50c1d

Abstract: 10N50E1D 10n40c HGTP10N40C1D HGTP10N40E1D HGTP10N50C1D HGTP10N50E1D 10N50C1 10n50c 50C1D
Contextual Info: HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, 50E1D S E M I C O N D U C T O R 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 10A, 400V and 500V JEDEC TO-220AB • VCE ON : 2.5V Max. EMITTER COLLECTOR

G20N50c

Abstract: g20n50c1d g20n50 g20N50c1 G20N40 igbt 400V 20A "Power Diode" 500V 20A power Diode 400V 20A G20N50E1D HGTH20N50E1D
Contextual Info: S E M I C O N D U C T O R HGTH20N40C1D, HGTH20N40E1D, HGTH20N50C1D, 50E1D 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 20A, 400V and 500V JEDEC TO-218AC • VCE ON 2.5V Max. EMITTER COLLECTOR

pj 809

Abstract: PJ 969 diode PJ 986 diode 047 pj 986 diode EM- 534 motor PJ 969 GE 639
Contextual Info: fffi HARRIS C iI s E M , co N D u cToB HGTH12N40C1D, HGTH12N40E1D HGTH12N50C 1D , 50E1D 12A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Package Features • JEDEC TO-218AC TOP VIEW 12 Amp, 400 and 500 Volt • V ce ON ‘ 2.5V Max.

10n50c1d

Abstract: 10N50E1D 10n40c 10N40E 10n50c 10N50C1 10n40 diode 10a 400v 10N40C1 10N50E1
Contextual Info: HGTP10N40C1D, HGTP10N40E1D, HGTP10N50C1D, 50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 10A, 400V and 500V JEDEC TO-220AB • VCE ON : 2.5V Max. EMITTER COLLECTOR GATE • TFALL: 1µs, 0.5µs

Contextual Info: HARRI S SEHICOND SECTOR ill H A R R IS \M J s e m i c o n d u c t o r bôE D • M3D2S71 HAS 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Features Package • 20 Amp, 400 and 500 Volt JEDEC TO-218 AC TOP VIEW • Vce on 2.5V Max.

equivalent data book of 10N60 mosfet

Abstract: MC14016CP GD4511 an-6466 CX 2859 SMD 74AC14 spice 6120* harris HCF4018be 7028 SMD Transistor spice irfbc40
Contextual Info: $5.00 S E M I C O N D U C T O R TECHNICAL ASSISTANCE Harris Marketing Support Services HMSS , 1-800-4HARRIS HMSS provides world-class service to customers requiring information on all products offered by Harris Semiconductor. Ask Harris Marketing Support Services for answers concerning:

Contextual Info: HARRIS SEIUCON» SECTOR bö E B M3D2S71 G0 S0 2? i » 72T HHAS HARRIS HGTH12N40C1D, HGTH12N40E1D s E M , c o N D u c T o R HGTH12N50C1D, 50E1D 12A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Package Features •