HGTH12N50C Search Results

HGTH12N40C1D

Abstract: HGTH12N40E1D HGTH12N50C1D HGTH12N50E1D G12N40E1D
Contextual Info: HGTH12N40C1D, HGTH12N40E1D, HGTH12N50C1D, HGTH12N50E1D 12A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 12A, 400V and 500V JEDEC TO-218AC • VCE ON : 2.5V Max. EMITTER • TFALL: 1µs, 0.5µs COLLECTOR

pic 16 f 888

Abstract: 12N50c
Contextual Info: CU H A R R IS HGTH12N40C1D, HGTH12N40E1D, HGTH12N50C1D, HGTH12N50E1D S E M I C O N D U C T O R 12A, 400V and 500V N-Channel IG B T s with Anti-Parallel Ultrafast D iodes Aprii 1995 Features Package • 12A, 400V and 500V J E D E C TO-218AC • V C E O N : 2 -5 V M a x • T FALL: 1 m s , 0 .5 ^ 8

HGTH12N40E1D

Abstract: HGTH12N40C1D HGTH12N50C1D HGTH12N50E1D 50uh
Contextual Info: HGTH12N40C1D, HGTH12N40E1D, HGTH12N50C1D, HGTH12N50E1D S E M I C O N D U C T O R 12A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 12A, 400V and 500V JEDEC TO-218AC • VCE ON : 2.5V Max. EMITTER • TFALL: 1µs, 0.5µs

pj 809

Abstract: PJ 969 diode PJ 986 diode 047 pj 986 diode EM- 534 motor PJ 969 GE 639
Contextual Info: fffi HARRIS C iI s E M , co N D u cToB HGTH12N40C1D, HGTH12N40E1D HGTH12N50C 1D , HGTH12N50E1D 12A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Package Features • JEDEC TO-218AC TOP VIEW 12 Amp, 400 and 500 Volt • V ce ON ‘ 2.5V Max.

Contextual Info: HARRIS SEIUCON» SECTOR bö E B M3D2S71 G0 S0 2? i » 72T HHAS HARRIS HGTH12N40C1D, HGTH12N40E1D s E M , c o N D u c T o R HGTH12N50C1D, HGTH12N50E1D 12A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes December 1993 Package Features •

HGTH20N40E1D

Abstract: TO218AC HGTG20N50 TO-220AB 5-lead IGBT Guide
Contextual Info: HARRIS IGBT PRODUCT LINE Selection Guide IGBTs CO HARRIS IGBT PRODUCT LINE Continued 1. Icm = maximum continuous current rating at Tc = +90°C. 2. ICM = maximum pulsed current rating. 3. tp measured at Tc = +150°C. Selection Guide SHADING Indicates DEVELOPMENTAL PRODUCTS

g10n50c1

Abstract: G10N50E1 HGTP10N40E1 50E1 HGTH12N40C1 HGTH12N40E1 HGTH12N50C1 HGTH12N50E1 HGTP10N40C1 HGTP10N50C1
Contextual Info: HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 S E M I C O N D U C T O R 10A, 12A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTH-TYPES JEDEC TO-218AC • 10A and 12A, 400V and 500V EMITTER • VCE ON : 2.5V Max. COLLECTOR • TFI: 1µs, 0.5µs

12N50E

Abstract: 12N50E1 10N50E1 g10n50c1 10N50C1 A 933 S transistors 10N40E1 12N50C1 tp10n40c TP10N40
Contextual Info: r r I i- i a c a m e ; <Ü h g t p i 0N40C1, 40E1, s o c i , 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 o? 10A, 12A, 400V and 500V N-Channel IGBTs A p ril 1 9 9 5 Features Packages H G TH -TY P E S JE D E C TO -218A C • 10A and 12A, 400V and 500V • ^CE ON ’ 2.5V Max.

igbt 400V 20A

Abstract: igbt 500V 15A diode 500v 10A diode 10a 400v 20A 500v igbt igbt 1000v 10A igbt 1200V 20A DIODE 20A igbt 400V 5A current sensing 400V
Contextual Info: I- MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS IGBTs PAGE SELECTION G U ID E .

TRANSISTOR BIPOLAR 400V 20A

Abstract: igbt 1000v 10A P-Channel IGBT igbt 500V 15A igbt 40A 600V P-CHANNEL 400V 15A N channel 600v 20a IGBT igbt 400V 40A igbt 400V 20A 400V P-Channel IGBT
Contextual Info: — MCT/IGBT/DIODES 3 INSULATED GATE BIPOLAR TRANSISTORS PAGE SELECTION G U ID E .

kc 637

Contextual Info: HARRIS SEÎIICOND SECTOR m U U HARRIS S E M I C O N D U C T O R bßE » • M3D2271 D O S D n S HGTH12N40C1, 40E1, 50C1, 50E1 HGTM12N40C1, 40E1, 50C1, 50E1 HGTP10N40C1, 40E1, 50C1, 50E1 10A, 12A, 400V and 500V N-Channel IGBTs December 1993 Packages Features

hgtm

Abstract: HGTM12N40E1
Contextual Info: HGTH12N40C1, 40E1, 50C1, 50E1 HGTM12N40C1, 40E1, 50C1, 50E1 HGTP10N40C1, 40E1, 50C1, 50E1 HARIRIS SEMICONDUCTOR 10A, 12A, 400V and 500V N-Channel IGBTs December 1993 Packages Features HGTH-TYPES JEDEC TO-21BAC TOP VIEW • 10A and 12A, 400V and 500V • V CE ON

Q2N4401

Abstract: D1N3940 Q2N2907A D1N1190 Q2SC1815 Q2N3055 Q2N1132 D1N750 D02CZ10 D1N751
Contextual Info: Analog Parts Index Digital Mixed-Signal Device Type Index Click on a device type to jump to its page Actuator Fluid Level Detector Operational Amplifier Small-Signal Mosfet Amplifier/Equilizer Ground Fault Interrupter Opto-Isolator Switch Mulitplier Analog

g10n50c1

Abstract: G10N50E1 ge 40e1 50E1 HGTH12N40C1 HGTH12N40E1 HGTH12N50C1 HGTH12N50E1 HGTP10N40C1 HGTP10N40E1
Contextual Info: HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 10A, 12A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTH-TYPES JEDEC TO-218AC • 10A and 12A, 400V and 500V EMITTER • VCE ON : 2.5V Max. COLLECTOR • TFI: 1µs, 0.5µs GATE COLLECTOR