HGTH12N40C1 Search Results

HGTH12N40C1 Datasheets (3)

Part	ECAD Model	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
HGTH12N40C1		Harris Semiconductor	10A and 12A, 400V and 500V N-Channel IGBT	Original	PDF	50.59KB	5
HGTH12N40C1		Intersil	10A, 12A, 400V and 500V N-Channel IGBTs	Original	PDF	39.85KB	7
HGTH12N40C1D		Harris Semiconductor	12A, 400V and 500V N-Channel IGBT with Anti-Parallel Ultrafast Diode	Original	PDF	46.57KB	5

HGTH12N40C1 Price and Stock

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Harris Semiconductor


Harris Semiconductor HGTH12N40C1D Insulated Gate Bipolar Transistor, 12A I(C), 400V V(BR)CES, N-Channel, TO-218AC
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Rochester Electronics	HGTH12N40C1D		1		1	1 - 10 - 100 $2.15 1000 $1.92 10000 $1.81	Buy Now

HGTH12N40C1 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
HGTH12N40C1D Abstract: HGTH12N40E1D HGTH12N50C1D HGTH12N50E1D G12N40E1D Contextual Info: HGTH12N40C1D, HGTH12N40E1D, HGTH12N50C1D, HGTH12N50E1D 12A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 12A, 400V and 500V JEDEC TO-218AC • VCE ON : 2.5V Max. EMITTER • TFALL: 1µs, 0.5µs COLLECTOR	Original	HGTH12N40C1D, HGTH12N40E1D, HGTH12N50C1D, HGTH12N50E1D O-218AC HGTH12N50E1D HGTH12N40C1D HGTH12N40E1D HGTH12N50C1D G12N40E1D	PDF
pic 16 f 888 Abstract: 12N50c Contextual Info: CU H A R R IS HGTH12N40C1D, HGTH12N40E1D, HGTH12N50C1D, HGTH12N50E1D S E M I C O N D U C T O R 12A, 400V and 500V N-Channel IG B T s with Anti-Parallel Ultrafast D iodes Aprii 1995 Features Package • 12A, 400V and 500V J E D E C TO-218AC • V C E O N : 2 -5 V M a x • T FALL: 1 m s , 0 .5 ^ 8	OCR Scan	HGTH12N40C1D, HGTH12N40E1D, HGTH12N50C1D, HGTH12N50E1D O-218AC AN7254 AN7260) 100AJ pic 16 f 888 12N50c	PDF
g10n50c1 Abstract: G10N50E1 HGTP10N40E1 50E1 HGTH12N40C1 HGTH12N40E1 HGTH12N50C1 HGTH12N50E1 HGTP10N40C1 HGTP10N50C1 Contextual Info: HGTP10N40C1, 40E1, 50C1, 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 S E M I C O N D U C T O R 10A, 12A, 400V and 500V N-Channel IGBTs April 1995 Features Packages HGTH-TYPES JEDEC TO-218AC • 10A and 12A, 400V and 500V EMITTER • VCE ON : 2.5V Max. COLLECTOR • TFI: 1µs, 0.5µs	Original	HGTP10N40C1, HGTH12N40C1, O-218AC O-220AB HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40E1, g10n50c1 G10N50E1 HGTP10N40E1 50E1 HGTH12N40C1 HGTH12N40E1 HGTH12N50C1 HGTH12N50E1 HGTP10N40C1 HGTP10N50C1	PDF
12N50E Abstract: 12N50E1 10N50E1 g10n50c1 10N50C1 A 933 S transistors 10N40E1 12N50C1 tp10n40c TP10N40 Contextual Info: r r I i- i a c a m e ; <Ü h g t p i 0N40C1, 40E1, s o c i , 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 o? 10A, 12A, 400V and 500V N-Channel IGBTs A p ril 1 9 9 5 Features Packages H G TH -TY P E S JE D E C TO -218A C • 10A and 12A, 400V and 500V • ^CE ON ’ 2.5V Max.	OCR Scan	0N40C1, HGTH12N40C1, -218A -220A HGTH12N40E1, HGTH12N50C1, HGTH12N50E1, HGTP10N40C1, HGTP10N40E1, 12N50E 12N50E1 10N50E1 g10n50c1 10N50C1 A 933 S transistors 10N40E1 12N50C1 tp10n40c TP10N40	PDF
HGTH12N40E1D Abstract: HGTH12N40C1D HGTH12N50C1D HGTH12N50E1D 50uh Contextual Info: HGTH12N40C1D, HGTH12N40E1D, HGTH12N50C1D, HGTH12N50E1D S E M I C O N D U C T O R 12A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 12A, 400V and 500V JEDEC TO-218AC • VCE ON : 2.5V Max. EMITTER • TFALL: 1µs, 0.5µs	Original	HGTH12N40C1D, HGTH12N40E1D, HGTH12N50C1D, HGTH12N50E1D O-218AC HGTH12N50E1D voltage260) HGTH12N40E1D HGTH12N40C1D HGTH12N50C1D 50uh	PDF
HGTH20N40E1D Abstract: TO218AC HGTG20N50 TO-220AB 5-lead IGBT Guide Contextual Info: HARRIS IGBT PRODUCT LINE Selection Guide IGBTs CO HARRIS IGBT PRODUCT LINE Continued 1. Icm = maximum continuous current rating at Tc = +90°C. 2. ICM = maximum pulsed current rating. 3. tp measured at Tc = +150°C. Selection Guide SHADING Indicates DEVELOPMENTAL PRODUCTS	OCR Scan	O-220AB HGTP6N40E1D HGTP10N40F1D HGTP10N40E1D HGTP10N40C1D HGTH12N40E1D HGTH12N40C1D HGTH20N40E1D HGTH20N40C1D HGTP6N50E1D TO218AC HGTG20N50 TO-220AB 5-lead IGBT Guide	PDF