100AJ Search Results

APC UPS es 500 CIRCUIT DIAGRAM

Abstract: sk 100 gale 065 tf 2SK1058 MOSFET APPLICATION NOTES APC UPS CIRCUIT DIAGRAM es 725 General Instrument data book 2SK2264 ESI 252 impedance meter transistor bf 175 PF0144 2SK212
Contextual Info: Hitachi Power MOS FET DATA BOOK HITACHI ADE-408 CONTENTS • Index. 5 ■ General Information.

pic 16 f 888

Abstract: 12N50c
Contextual Info: CU H A R R IS HGTH12N40C1D, HGTH12N40E1D, HGTH12N50C1D, HGTH12N50E1D S E M I C O N D U C T O R 12A, 400V and 500V N-Channel IG B T s with Anti-Parallel Ultrafast D iodes Aprii 1995 Features Package • 12A, 400V and 500V J E D E C TO-218AC • V C E O N : 2 -5 V M a x • T FALL: 1 m s , 0 .5 ^ 8

Contextual Info: MITSUBISHI LSIs DRAM MODULE FAST PAGE MODE DYNAMIC RAM 16M X 32 512 M B IT Max. Access Type name Load memory time Outward dimensions Data sheet W x H x D (mm) page (ns) MH16M32AJ-6 ★ MH16M32NAJ-6 ★ MH16M32AJ-7 ★ MH16M32NAJ-7 ★ 60 M 100AJ x 32

BP107

Abstract: ID221205 Scans-007799
Contextual Info: POWEREX INC m 3=JE D t /a ta c • 7 2 1 4 b 2 1 0DG47Ô7 fi mP RX _ Powerex, Inc., Hillis Street, Youngwood, Pennsylvania 15697 412 925-7272 Powerex, Europe, S.A. 428 Avenue G. Durand, BP107, 72003 Le Mans, France (43) 41.14.14 ID 221205

Contextual Info: I NIE ME6N10 ME6N10-F J • d vq ss RDS on 6A 100V 0.250 N-Channel Power MOSFET FEATURES: • Fast Switching Speed • Low On-Resistance • Ease of Paralleling • No Second Breakdown • TO-252 Surface Mount Package available on 16mm Tape ABSOLUTE MAXIMUM RATINGS

100DG

Abstract: 100DJ 100AB 100AC 100BA 100BB 100BC 100CA 100CB 100CC
Contextual Info: OA K / n C COY ELEK-. OV E N A I M5E D b75ô510 DQ00374 13T • OKPI -5 V JC C O Y TCXO's 100 Series, .2 to 25 MHz, TTL or HCMOS |K*: ' f The 100 sériés is designed for.+5VDC, TTL3 r or HCMOS applications requiring a space „ if,saving enclosure and- moderate s ta b ilitie s ^

k1403

Abstract: mml 600 2SK1403 2SK1403A K1403A
Contextual Info: HITACHI 2SK1403,2SK1403A S ILIC O N IM-CHANNEL M O S FET ♦ 1.2 ±0 2 HIGH SPEED POWER SWITCHING 5,0« • FEATURES • Low On-Resistance • High Speed Switching • Low Drive Current • No Secondary Breakdown • Suitable for Switching Regulator and DC-DC Converter

ic 556

Abstract: an 7554 SiS 620
Contextual Info: 10 12 13 PART N U M B ER CIRCUIT S IZ E DIM DIM "B u DIM „A- DIM "D" M A TIN G M O D ULE 75548-6000 64 22 .6 6 /.8 9 2 20.76/.817 17.50/.689 27.50/1.08 7 556 8- 1000 75548-6056 56 20.16/.794 75548-6048 48 17.66/.695 18.26/.719 15.00/.591 25 .0 0 /.9 8 4

100CC

Abstract: 100CG 100DM
Contextual Info: OAK/nC COY ELEKS b?2flS10 OVENAI M5E D 0Q 00374 13T • OKfl M cCOY TCXO's 100 Series, .2 to 25 MHz, TTL or HCMOS The 100 series is designed for +5VDC, TTL* or HCM O S applications requiring a space . f.saving eaclosure and, moderate stabilities^ This series utilizes a surface mount designJ

Contextual Info: MITSUBISHI LS Is {DRAM MODULE MH16M36AJ-6,-7/ MH16M36NAJ-6,-7 FAST PAGE MODE 603979776-BrT 16777216-WORD BY 36-BIT) DYNAMIC RAM DESCRIPTION PIN CONFIGURATION (TOP VIEW) [Both side) The MH16M36AJ/NAJ is 16777216-word x 36-bit dynamic RAM. This consists of thirty-six industry syandard 16M x 1

irfd113

Abstract: IRFD110R IRFD111R IRFD112R IRFD113R IRFD111
Contextual Info: _Rugged Power MOSFETs File N um ber IRFD110R, IRFD111R, IRFD112R, IRFD113R 2035 Avalanche Energy Rated N-Channel Power MOSFETs 1A and 0.8A, 60V-100V ros on = 0.60 and 0.80 N-CHANNEL ENHANCEMENT MODE o Features: • Single pulse avalanche energy rated

Contextual Info: SSP1N50A Advanced Power MOSFET FEATURES • Avalanche Rugged Technology ■ Rugged Gate Oxide Technology ■ Lower Input Capacitance ■ Improved Gate Charge ■ Extended Safe Operating Area ■ Lower Leakage Current : 10 HA Max. @ V DS = 500V ■ Lower RDS(0N) : 4.046 ^ (Typ.)

sft 367

Contextual Info: MITSUBISHI LSIs DRAM MODULE FAST PAGE MODE DYNAMIC RAM 16MX36 Max. Access time (ns) Type name MH16M36AJ-6 ★ MH16M36NAJ-6 ★ MH16M36AJ-7 ★ MH16M36NAJ-7 ★ 576 MBIT Load memory Outward dimensions Data sheet W X H X D (mm) page 60 100AJ x 36 120.51 X 4 6 .3 x 8 .6

Contextual Info: HARRI S SEHICOND SECTOR ill H A R R IS \M J s e m i c o n d u c t o r bôE D • M3D2S71 HAS 20A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Features Package • 20 Amp, 400 and 500 Volt JEDEC TO-218 AC TOP VIEW • Vce on 2.5V Max.