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    10N40E Search Results

    10N40E Datasheets (2)

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    Part ECAD Model Manufacturer Description Datasheet Type PDF PDF Size Page count
    10N40E1
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 33.22KB 1
    10N40E1D
    Unknown Historical semiconductor price guide (US$ - 1998). From our catalog scanning project. Historical PDF 33.22KB 1
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    10N40E Price and Stock

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    onsemi MTB10N40ET4

    Trans MOSFET N-CH Si 400V 10A 3-Pin(2+Tab) D2PAK T/R
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Bristol Electronics MTB10N40ET4 32,394
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    Rochester Electronics MTB10N40ET4 69,442 1
    • 1 -
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    • 100 $1.02
    • 1000 $0.85
    • 10000 $0.75
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    Motorola Semiconductor Products MTP10N40E

    Trans MOSFET N-CH Si 400V 10A 3-Pin(3+Tab) TO-220AB
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    Bristol Electronics MTP10N40E 200
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    Component Electronics, Inc MTP10N40E 4,990
    • 1 $0.77
    • 10 $0.77
    • 100 $0.58
    • 1000 $0.50
    • 10000 $0.50
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    onsemi MTB10N40E

    MOSFET N-Channel 400V 10A (Tc) TO-263-3
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    Rochester Electronics MTB10N40E 39,099 1
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    • 100 $1.43
    • 1000 $1.28
    • 10000 $1.21
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    Harris Semiconductor HGTP10N40E1

    IGBT-Single 400V 10A 60W TO-220-3
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    Rochester Electronics HGTP10N40E1 267 1
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    • 100 $1.37
    • 1000 $1.14
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    Harris Semiconductor HGTP10N40E1D

    IGBT-Single 400V 17.5A 75W TO-220-3
    Distributors Part Package Stock Lead Time Min Order Qty Price Buy
    Rochester Electronics HGTP10N40E1D 162 1
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    • 100 $1.36
    • 1000 $1.22
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    10N40E Datasheets Context Search

    Catalog Datasheet Type Document Tags PDF

    6N60E

    Abstract: 10N100E 14n50e MOSFET 20n50e 8n50e 35N15E 32N20E 20N50E 6N100E 16N40E
    Contextual Info: ir TMOS TM OS Power MOSFETs Plastic Packages — TO-247 TO-247 CASE 340F-03 MTW PREFIX — Isolateci TO-218 Table 4 — N-Channel TO-247 VDss (Volts) Min RDS(on) I d (Ohms) (Amps) Max Device 1000 800 600 2 3 M TW 6N100E Table 5 — N- and P-Channel Isolated TO-218


    OCR Scan
    o-247o-218340f-03340b-03+106n100e10n100e6n60e14n50emosfet 20n50e8n50e35n15e32n20e20n50e16n40e PDF

    MTP8P20

    Abstract: MTP10N10M MTP8N18 MTP7N18 MTP7N20 MTP7P05 MTP7P06 MTP8N08 MTP8N10 MTP8N12
    Contextual Info: M € f Ä * Vds or Vd g tí: « A V * £ fê (Ta=25^C) Vg s (V) Id Po * /CH * /CH Ig s s m (A) % S V g s (th) Id s s (nA) Vg s (V) Vd s (V) <UA) Id (nA) (V) (V) fê ÎDs(on) V:r>s= Vg s max min ft '14 CTa=25cC ) ÌD(on) Ciss g fs Coss ft Crss V g s =0 (max)


    OCR Scan
    mtp7n18t0-220abmtp7n20o-220ab+9mtp7p05mtp7p06mtp10ni5mtp8p20mtp10n10mmtp8n18mtp8n08mtp8n10mtp8n12 PDF

    12N50E

    Abstract: 12N50E1 10N50E1 g10n50c1 10N50C1 A 933 S transistors 10N40E1 12N50C1 tp10n40c TP10N40
    Contextual Info: r r I i- i a c a m e ; <Ü h g t p i 0N40C1, 40E1, s o c i , 50E1, HGTH12N40C1, 40E1, 50C1, 50E1 o? 10A, 12A, 400V and 500V N-Channel IGBTs A p ril 1 9 9 5 Features Packages H G TH -TY P E S JE D E C TO -218A C • 10A and 12A, 400V and 500V • ^CE ON ’ 2.5V Max.


    OCR Scan
    0n40c1hgth12n40c1-218a-220a+15hgth12n40e1hgth12n50c1hgth12n50e1hgtp10n40c1hgtp10n40e112n50e12n50e110n50e1g10n50c110n50c1a 933 s transistors10n40e112n50c1tp10n40ctp10n40 PDF

    MTM13N50E

    Abstract: P40N10 24N40 p50n05 8n50e Power MOSFET Cross Reference Guide motorola 20n50e TP50N05E IRF510 mosfet irf640 33N10E
    Contextual Info: ir tmos Cross-Reference The follow ing table represents a cro ss-re fe re n ce guide for all T M O S P ow er M O SFETs w hich are m an ufacture d directly by M otorola. W here the M otorola part nu m be r differs from the Industry part num ber, the M otorola de vice is a “form , fit and fu n ctio n ”


    OCR Scan
    buz10buz11buz11abuz11s2+16buz15buz171buz20buz21buz23buz31mtm13n50ep40n1024n40p50n058n50epower mosfet cross reference guidemotorola 20n50etp50n05eirf510 mosfet irf64033n10e PDF

    10n50c1d

    Abstract: 10N50E1D 10N40E ultrafast diode 10a 300v 50E1D 10N50E1 400v 5A 1Y 10N40C1
    Contextual Info: m l-L A J R F R IS tip s E M , c o N D u c T o R HGTP10N40C1D, 10N40E1D, HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes Aprii 1995 Features Package • 10A, 400V and 500V JEDEC TO-22QAB • ^CE ON ' 2.5V Max.


    OCR Scan
    hgtp10n40c1dhgtp10n40e1dhgtp10n50c1dhgtp10n50e1d+10o-22qaban725410n50c1d10n50e1d10n40eultrafast diode 10a 300v50e1d10n50e1400v 5a 1y10n40c1 PDF

    10n50c1d

    Abstract: 10N50E1D 10n40c HGTP10N40C1D HGTP10N40E1D HGTP10N50C1D HGTP10N50E1D 10N50C1 10n50c 50C1D
    Contextual Info: HGTP10N40C1D, 10N40E1D, HGTP10N50C1D, HGTP10N50E1D S E M I C O N D U C T O R 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 10A, 400V and 500V JEDEC TO-220AB • VCE ON : 2.5V Max. EMITTER COLLECTOR


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    hgtp10n40c1dhgtp10n40e1dhgtp10n50c1dhgtp10n50e1d+8o-220ab150oc10n50c1d10n50e1d10n40c10n50c110n50c50c1d PDF

    10n40e

    Abstract: 10N40
    Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA D esigner’s Data Sheet 10N40E TM O S E -F E T ™ Motorola Preferred Device High Energy Power FET D2PAK for Surface Mount N-Channel Enhancement-Mode Silicon CSate The D2PAK package has the capability of housing a larger die


    OCR Scan
    mtb10n40e10n40e10n40 PDF

    10n50c1d

    Abstract: 10N50E1D 10n40c 10N40E 10n50c 10N50C1 10n40 diode 10a 400v 10N40C1 10N50E1
    Contextual Info: HGTP10N40C1D, 10N40E1D, HGTP10N50C1D, HGTP10N50E1D 10A, 400V and 500V N-Channel IGBTs with Anti-Parallel Ultrafast Diodes April 1995 Features Package • 10A, 400V and 500V JEDEC TO-220AB • VCE ON : 2.5V Max. EMITTER COLLECTOR GATE • TFALL: 1µs, 0.5µs


    Original
    hgtp10n40c1dhgtp10n40e1dhgtp10n50c1dhgtp10n50e1d+11o-220ab10n50c1d10n50e1d10n40c10n40e10n50c10n50c110n40diode 10a 400v10n40c110n50e1 PDF