BUZ21 Search Results

BUZ21

Contextual Info: SILICONIX INC 1ÖE D fc r'SiKcot. Siliconix in c o rp o ra te d h • ÖSS4735 00145*17 S BUZ21 JL M N-Channel Enhancemenr Mode Transistor T-3PI TOP VIEW TO-220AB PRODUCT SUMMARY V BRJDSS "W 0.10 100 O Id (A 19 1 GATE 2 DRAIN (Connected to TAB) 3 SOURCE

P50N05

Abstract: p50n06 TP3055EL tp50n05e MTP36N06E
Contextual Info: N-Channel v«n n f S >« M ix ' Pd IW IM I MIX) so BUZ11 40 2 -4 30 /O 50 BUZ11A 55 2 -4 26 75 100 BUZ20 200 2 -4 1 3 .5 70 100 BUZ21 85 2 -4 21 75 50 BUZ71 100 2 -4 14 40 50 BUZ71A 120 2 -4 13 40 100 IR F 5 1 0 540 2 -4 5.6 43 100 IR F 5 2 0 270 2 -4 9.2

BUZ211

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ211 CASE OUTLINE: TO-204AA (TO-3) HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

BUZ21

Contextual Info: BUZ21 ££ HARRIS N-Channel Enhancement-Mode Power Field-Effect Transistor August 1991 Package Features T O -2 2 0 A B TOP VIEW • 19A, 100V • rDS on) = 0.1 f l • SOA is Power-Dlssipation Limited DRAIN (FLANGE) • Nanosecond Switching Speeds • Linear Transfer Characteristics

BUZ21

Abstract: bt 109 transistor BUZ21 L T0220AB
Contextual Info: N AMER PHILIPS/DISCRETE ! ObE D btiSBT31 D01MM23 T " PowerMOS transistor BUZ21 May 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is intended for use in Switched Mode Power Supplies SMPS , m otor control, welding,

Contextual Info: BUZ 21L Infineo n t « c h n o l o g •es SIPMOS Power Transistor • N channel • Enhancement mode • Avalanche-rated • Logic Level Type Vds % ^DS on Package Ordering Code BUZ21 L 100 V 21 A 0.085 ü TO-220 AB C67078-S1338-A2 Maximum Ratings Parameter

TSD45N50V

Abstract: TSD200N05V TSD40N55V TSD180N10V IRF540 TSD135N10V TSD150N10V TSD4M450V TSD17N100 TSD160N05V
Contextual Info: SELECTION GUIDE BY - PART NUMBER Type V BR DSS (V) ^DS(on) ^ Id max (A) (H) Package iD(max) (A) Ptot (W) Qfs min (S) Ciss max (pF) 850 2000 BUZ10 50 0.080 13.00 TO-220 20.0 85 6.00 BUZ11 BUZ11A BUZ11FI BUZ21 50 0.040 0.055 0.040 0.100 18.00 15.00 18.00 9.00

Contextual Info: BUZ21L Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)100 V(BR)GSS (V)10 I(D) Max. (A)21 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb)84 @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)-55õ

Contextual Info: BUZ216 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V) I(D) Max. (A)4.4 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)

buz210

Contextual Info: PRODUCT SPECIFICATIONS SEMICONDUCTOR TECHNOLOGY, INC. 3131 S. E. JAY STREET, STUART, FL 34997 PH: 561 283-4500 FAX: (561) 286-8914 Website: http://www.semi-tech-inc.com TYPE: BUZ210 CASE OUTLINE: TO-204AA (TO-3) HIGH VOLTAGE POWER MOSFET N-CHANNEL ABSOLUTE MAXIMUM RATING:

BUZ21

Contextual Info: / = T S G S -T H O M S O N * 7 # » » itL IIC T ß Ä O tg S B U Z 21 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V Dss BUZ21 100 V ^D S on 0.1 fi 19 A • 100 VO LTS - FOR DC/DC CO NVERTERS • HIGH CURRENT • RATED FOR UNCLAM PED INDUCTIVE

BUZ21

Abstract: TA9854 TB334
Contextual Info: BUZ21 Semiconductor Data Sheet 19A, 100V, 0.100 Ohm, N-Channel Power MOSFET October 1998 File Number 2420.1 Features • 19A, 100V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.100Ω (BUZ21) field effect transistor designed for applications such as

BUZ10A

Abstract: IEF520 T0220H BUZ63 BUZ10 BUZ11 BUZ23 BUP67 BUP68 BUP70
Contextual Info: ì> m Ö1331Ö7 0 G DDlt b3 OS? • S N L B SEM ELABE MOS TRANSISTORS Type Rei BUP67 BUP68 BUP69 BUP70 BUP71 BUZ10 BUZ10A BUZ11 BUZ11A BUZ20 BUZ21 BUZ23 B0Z24 BUZ25 BUZ31 BÜZ32 BUZ35 BUZ36 BUZ41A BUZ42 BUZ45 BUZ45 BUZ45A BUZ46 BUZ50A BUZ50A-T0220ÏÏ BUZ50B

BUZ21

Abstract: schematic diagram UPS din 40040 humidity
Contextual Info: rrj SCS-THOMSON 4-1% BUZ21 * 7 / . N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR TYPE V DSS R DS on •d BUZ21 100 V 0.1 ß 19 A . 100 VOLTS - FOR DC/DC CONVERTERS . H IG H CURRENT . RATED FOR UNCLAMPED INDUCTIVE SWITCHING (ENERGY TEST) ♦ . ULTRA FAST SWITCHING

Contextual Info: BUZ211 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V) I(D) Max. (A)9.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)125 Minimum Operating Temp (øC)

Contextual Info: BUZ213 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V) I(D) Max. (A)8.5 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)83 Minimum Operating Temp (øC)

Contextual Info: BUZ214 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V) I(D) Max. (A)7.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)83 Minimum Operating Temp (øC)

buz21

Abstract: transistor 643
Contextual Info: I • 71S1237 7 7 SG S-1H 0M S0N _ 3 0 E V # I , I QQ3D12S fa _ 6 S^THOMSON S BUZ21 CHIP [^D g^(Q [i[Lll ir^©iOgl _ N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 156x156 mils

buz21

Abstract: as58
Contextual Info: S G S -T H O M S O N w BUZ21 u r n N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ21 . . . . . . V R d s o h dss 100 V j 0.1 Là Id 21 A AVALANCHE RUG G EDN ESS TECHNO LO GY 100% AVALANCHE TESTED REPETITIVE AVALANC HE DATA AT 100°C LOW GATE CHARGE

BUZ211

Abstract: 30VN IEC134
Contextual Info: BUZ211 PowerMOS transistor N AMER P H I L I P S /D I S CR ET E ObE D ^ 53=131 0014bbö 7 I T - 2 1 -1 3 July 1987 QUICK REFERENCE DATA GENERAL DESCRIPTION N-channel enhancement mode PARAMETER SYMBOL field-effect power transistor in a Drain-source voltage metal envelope.

Contextual Info: BUZ215 Transistors N-Channel Enhancement MOSFET Military/High-RelN V BR DSS (V)500 V(BR)GSS (V) I(D) Max. (A)5.0 I(DM) Max. (A) Pulsed I(D) @Temp (øC) IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)75 Minimum Operating Temp (øC)

Contextual Info: _ • 7 T E T 2 3 7 O O M S bG ? Sbb ■ S 6 T H _ fZ 7 SCS-THOMSON IM g^ i[L[iO¥[RMDOS B U Z 21 N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTORS TYPE BUZ21 ■ . . . ■ ■ . V dss R D S (on Id 100 V < 0.1 n 21 A TYPICAL RDS(on) = 0.09 Q.

Contextual Info: _ 30E 1 C T • QQ30122 b ■ / ' p j v t j S G S -T H O M S O N _ S 6 S-ThOMSON ^7# M I^ dLi©¥[^®[i^D©i) ' BUZ21 CHIP N - CHANNEL ENHANCEMENT MODE POWER MOS TRANSISTOR IN DIE FORM DIE SIZE: 1 5 6 x 1 5 6 mils METALLIZATION: Top Back Al

BUZ211

Contextual Info: _ PowerMOS transistor_ BUZ211 N AMER PHILIPS/DISCRETE DbE D • _ _SL OOlMbbfl 7 ■ T-si-13 July 1987 GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a metal envelope. FREDFET* with fast-recovery reverse diode.