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BUZ21 Abstract: TA9854 TB334 Contextual Info: BUZ21 Semiconductor Data Sheet 19A, 100V, 0.100 Ohm, N-Channel Power MOSFET October 1998 File Number 2420.1 Features • 19A, 100V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.100Ω (BUZ21) field effect transistor designed for applications such as	Original	BUZ21 BUZ21) TA9854. BUZ21 TA9854 TB334	PDF
Contextual Info: BUZ21 Semiconductor Data Sheet October 1998 19A, 100 V, 0.100 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,	OCR Scan	BUZ21 TA9854.	PDF

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BUZ21

Abstract: TA9854 TB334
Contextual Info: BUZ21 Semiconductor Data Sheet 19A, 100V, 0.100 Ohm, N-Channel Power MOSFET October 1998 File Number 2420.1 Features • 19A, 100V [ /Title This is an N-Channel enhancement mode silicon gate power • rDS ON = 0.100Ω (BUZ21) field effect transistor designed for applications such as

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BUZ21 BUZ21) TA9854. BUZ21 TA9854 TB334

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Contextual Info: BUZ21 Semiconductor Data Sheet October 1998 19A, 100 V, 0.100 Ohm, N-Channel Power MOSFET This is an N-Channel enhancement mode silicon gate power field effect transistor designed for applications such as switching regulators, switching converters, motor drivers,

OCR Scan

BUZ21 TA9854.

PDF