2SD1768 Search Results

2SD1733

Abstract: 2SB1181 2SB1241 2SB1260 2SD1768S 2SD1863 2SD1898 SC-72
Contextual Info: 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Transistors Power Transistor 80V, 1A 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 !External dimensions (Unit : mm) 2SD1898 1.5 +0.2 −0.1 2.5+0.2 −0.1 4.0±0.3 0.5±0.1 4.5+0.2 −0.1 1.6±0.1 (1) 1.0±0.2 !Features 1) High VCEO, VCEO=80V

Contextual Info: Transistors Medium Power Transistor 80V, 1A 2SD1898/2SD1733/2SD1768S/2SD1863/2SD1381F ►External dim ensions (Units: mm) •F e a tu re s 1) High V ceo. V = 80V ceo 2SD1898 2) High IC. Ic = 1 A (D C ) 3) G ood hre linearity. 4) c + 0 .2 5 - 0.1 1.6 ± 0.1

Contextual Info: S -7 > i / 7, $ /Transistors ROHM CO LTD 2 S D 1 T—27—13 2SD1768S 7fl2Û Ttt ODOS.'iûE' T • RHM •' 40E D 7 S 8 S Power Amp. Epitaxial Planar NPN Silicon Transistor • !$ J | T -27-O ^ • ^ J f^ > i a /D im e n s io n s {U n it:m m 1) V ceo Aî ü î '' ' (80V)o

2SD1768

Abstract: 2SD1768S
Contextual Info: h ~7 > y 7s $ / I ransistors 2SD1768S 2SD1768S • Epitaxal Planar NPN Silicon Transistors ^ H ^ iS i if f l / M e d iu m Power Amp. • & & Unit: mm 1) VcEO JP fct'o VCEO=80V 4 ± 0.2 2 .010.2 2) lc l c = 1A (DC) tu 3) hFE00 ' J - T ' J T l f f & l 'o 4 ) V c e ( sal )/ )'• (& '''o

2SD1863

Abstract: 2sd1733 2SD1898
Contextual Info: Transistors Medium Power Transistor 80V, 1A 2SD1898/2SD1733/2SD1768S/2SD1863/2SD1381F •F e a tu re s 1) High ►External dimensions (Units: mm) V ceo . V ceo = 8 0 V 2SD1898 2) High IC. Ic = 1A (DC) 4.5±g:? c+0.2 5 _ 0.1 3) Good hre linearity. 4) Low VcEfsat),

2SB1181

Abstract: 2SB1241 2SB1260 2SD1733 2SD1768S 2SD1863 2SD1898 SC-72
Contextual Info: 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Transistors Power Transistor 80V, 1A 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 zExternal dimensions (Unit : mm) 2SD1898 1.5 +0.2 −0.1 2.5+0.2 −0.1 4.0±0.3 0.5±0.1 4.5+0.2 −0.1 1.6±0.1 (1) 1.0±0.2 zFeatures 1) High VCEO, VCEO=80V

2SD1768S

Abstract: spice rohm 28
Contextual Info: SPICE PARAMETER 2SD1768S by ROHM TR Div. * 2SD1768S NPN BJT model * Date: 2006/11/28 .MODEL 2SD1768S NPN + IS=280.00E-15 + BF=199.80 + VAF=40 + IKF=4.6752 + ISE=280.00E-15 + NE=1.5882 + BR=404.98 + VAR=100 + IKR=.40942 + ISC=4.9564E-12 + NC=1.2884 + NK=.97272

NPN Transistor VCEO 80V 100V

Abstract: hfe 2500 PW 1.5 transistor Ic 1A datasheet Vceo 100V Ic 0.5A 2SD1863 npn transistor 100v min 2SD1898 SC-72 2SB1181
Contextual Info: 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Transistors Power Transistor 80V, 1A 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 !External dimensions (Unit : mm) 2SD1898 1.5 +0.2 −0.1 2.5+0.2 −0.1 4.0±0.3 0.5±0.1 4.5+0.2 −0.1 1.6±0.1 (1) 1.0±0.2 !Features 1) High VCEO, VCEO=80V

Contextual Info: h ~7 > v / 2SD1768S $ /Transistors 2SD 1768S NPN y V 3 > V y ' s v W ^ s tlfr ^ llffl/M e c liu m Power Amp. Epitaxial Planar NPN Silicon Transistor • W K -tf;£@ /D im ension s U n it: mm • 1) VCeo »' ^ (8 0 V ) o 2) U AD C)0 3 ) hFE<7) o 4 ) V c e ( sat

2SB1181

Abstract: 2SB1241 2SB1260 2SD1733 2SD1768S 2SD1863 2SD1898 SC-72
Contextual Info: Power Transistor 80V, 1A 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 zDimensions (Unit : mm) 2SD1898 +0.2 1.5 −0.1 2.5+0.2 −0.1 4.0±0.3 0.5±0.1 4.5+0.2 −0.1 1.6±0.1 (1) 1.0±0.2 zFeatures 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity

2SD1863

Abstract: ROHM 2SD1733 2SB1181 2SB1241 2SB1260 2SD1381F 2SD1733 2SD1768S 2SD1898
Contextual Info: 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F Transistors Power Transistor 80V, 1A 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F !External dimensions (Units : mm) 2SD1898 1.5 +0.2 −0.1 2.5+0.2 −0.1 4.0±0.3 0.5±0.1 4.5+0.2 −0.1 1.6±0.1 (1)

NPN transistor 2sd1863

Abstract: 80V 1A NPN Transistor 2SB1260 2SD1733 2SD1768S 2SD1898 2SB1181 2SD1863 Vceo 80V Ic 1A 2SB1241
Contextual Info: Transistors Power Transistor 80V, 1A 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F FFeatures 1) High VCEO, VCEO = 80V 2) High IC, IC = 1A (DC) 3) Good hFE linearity. 4) Low VCE(sat). 5) Complements the 2SB1260 / 2SB1241 / 2SB1181. FExternal dimensions (Units: mm)

80V 1A NPN Transistor

Abstract: 2SD1898 2SD1768S NPN transistor 2sd1863 2SD1768 2SD1863 2SB1181 2SD1733 2SB1241 2SB1260
Contextual Info: Transistors Power Transistor 80V, 1A 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 / 2SD1381F FFeatures 1) High VCEO, VCEO = 80V 2) High IC, IC = 1A (DC) 3) Good hFE linearity. 4) Low VCE(sat). 5) Complements the 2SB1260 / 2SB1241 / 2SB1181. FExternal dimensions (Units: mm)

2SD1898

Contextual Info: Power Transistor 80V, 1A 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Dimensions (Unit : mm) 2SD1898 1.5 ±0.1 2.5+0.2 −0.1 4.0±0.3 0.5±0.1 4.5+0.2 −0.1 1.6±0.1 (1) 1.0±0.2 Features 1) High VCEO, VCEO=80V 2) High IC, IC=1A (DC) 3) Good hFE linearity

2SD1863R

Abstract: 2SD1898 SC-72 2SB1181 2SB1241 2SB1260 2SD1733 2SD1768S 2SD1863 NPN transistor 2sd1863
Contextual Info: 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 Transistors Power Transistor 80V, 1A 2SD1898 / 2SD1733 / 2SD1768S / 2SD1863 !External dimensions (Units : mm) 2SD1898 1.5 +0.2 −0.1 2.5+0.2 −0.1 4.0±0.3 0.5±0.1 4.5+0.2 −0.1 1.6±0.1 (1) 1.0±0.2 !Features 1) High VCEO, VCEO=80V

2SD1898

Abstract: 2SD1863 B1241 D1733
Contextual Info: Transistors Medium Power Transistor 80V, 1A 2SD1898/2SD1733/2SD1768S/2SD1863/2SD1381F •F e a tu re s •E x te rn a l dim ensions (Units: mm) 1) High V ceo. V ceo = 8 0 V 2SD1898 2) High IC. Ic = 1A (DC) 3) Good hFE linearity. 4) 1.6 ± 0 1 r— 1 -m Low VcE(sat).

transistor npn

Abstract: 2SD1768S transistor 313 2SD1768 Transistor 2SD1768S
Contextual Info: 2SD1768S Transistor, NPN Features Dimensions Units : mm available in SP T (SC -72) package 2SD1768S (SPT) high co llector-to-em itter voltage: V c e o = 80 V large collector current: lc = l A continuous (dc) m good hFE linearity low co lle ctor saturation voltage

2SD1960

Abstract: 2SD1468 2SB737 L120A 2SC1740 transistor 2SD786 2SD786S 2SC1740SLN 2SA933A 2SC2808
Contextual Info: Transistors TO-92 •SPT TO-92 and its smaller version, the SPT transistors, have conventional leads that fit into PWB mounting holes. Ammo box taped packaging for automated insertion is standard packaging, however, bulk is also available. Package Application

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.

C2021M

Abstract: B1568 mosfet ftr 03 2SC1B15 2SA1904 Mosfet FTR 03-E 2SC2021E 2SC1740 transistor 2SK2295 2S0240
Contextual Info: Transistor Quick reference Package-A ^plication Application v CEO V •V ces *VcEH Low rbb' Head Amp Low Noise Package FTR FTL ATR ATV SPT / 2SB737 V 2SD786 40 TO-92L 40 2SC2021LJNE) 2SB821 50 / 2SA937ALN \2SC2021LN(RS) 2SB1276 ( 2SA933A 2SA937AM \2SC1740(QR&)

2SD1761

Abstract: 2S01761 2sd1764 2sb117 2SD1760F5 2SD1746 2SD1747 2SD1747A 2SD1748 2SD1748A
Contextual Info: - 254 - m Ta=25‘ C , *EP(iTc=25°C 2SD1746 fôT 2SD1747 2SD1747A fâT 2SD1748 2SD1748A VcBO VcEO (V) (V) Iccdc) (A) Pc Pci (W) (W) ICBO. (max) Cí¿A) VcB (V) % (min) Kl & 14 (Ta=25tC ) hF E (max) V'cE (V) [*EPIàtypii] VcE(sat \iîiax^ (V) iC/ 1E (A)

2SD1960

Abstract: 2SA1835 2sd1960 transistor transistor 2SC1741 2sa1038 transistor 2SC17415 2SD2152 2SC1740 transistor 2SC2808 2SA1137S
Contextual Info: Transistors TO-92 • SPT TO-92 and its smaller version, the SPT transistors, have conventional leads that fit into PWB mounting holes. Ammo box taped packaging for automated insertion is standard packaging, however, bulk is also available. Pc mW Package

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

d2396

Abstract: TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460
Contextual Info: Transistors Transistors Products Tables Surface mounting types • M O S FET • Automatic mounting is possible : Products are housed in a package which supports automatic mounting. • 4V drive types : Direct drive from 1C allows reduction of components elimination of buffer transistor .