2SD1747
Abstract: 2SD1747A ic shelf life
Contextual Info: Power Transistors 2SD1747, 2SD1747A Silicon NPN epitaxial planar type For power switching Unit: mm 2.5±0.2 1.0 1.1±0.1 Parameter Collector-base voltage (Emitter open) 2SD1747 0.75±0.1 0.4±0.1 1.0±0.2 • Absolute Maximum Ratings TC = 25°C Symbol Rating
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2SD1761
Abstract: 2S01761 2sd1764 2sb117 2SD1760F5 2SD1746 2SD1747 2SD1747A 2SD1748 2SD1748A
Contextual Info: - 254 - m Ta=25‘ C , *EP(iTc=25°C 2SD1746 fôT 2SD1747 2SD1747A fâT 2SD1748 2SD1748A VcBO VcEO (V) (V) Iccdc) (A) Pc Pci (W) (W) ICBO. (max) Cí¿A) VcB (V) % (min) Kl & 14 (Ta=25tC ) hF E (max) V'cE (V) [*EPIàtypii] VcE(sat \iîiax^ (V) iC/ 1E (A)
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1747, 2SD1747A Silicon NPN epitaxial planar type For power switching Unit: mm 2.5±0.2 (1.0) 1.1±0.1 Parameter Collector-base voltage (Emitter open) 2SD1747 0.75±0.1 0.4±0.1
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2SB1177
Abstract: 2SD1747 2SD1747A DSA003794
Contextual Info: Power Transistors 2SD1747, 2SD1747A Silicon NPN epitaxial planar type For power switching Complementary to 2SB1177 Unit: mm 7.0±0.3 ● +0.3 0.8±0.2 1.1±0.1 1.0±0.2 ● Low collector to emitter saturation voltage VCE sat Satisfactory linearity of foward current transfer ratio hFE
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2SB1177
Abstract: 2SD1747
Contextual Info: Power Transistors 2SB1177 2SB1177 Silicon PNP Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2SD1747 Unit i mm • Features • Low c o lle c tc r-e im itte r s a tu ra tio n v o ltag e • G ood lin earity o f D C c u r re n t gain
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2SB1177
Abstract: 2SD1747 2SD1747A
Contextual Info: 2SD1747, 2SD1747A Power Transistors 2SD1747, 2SD 1747A Silicon NPN Epitaxial Planar Type M Package Dimensions Power Switching Complementary Pair with 2SB1177 U n it' ! mm • Features 3.7m ax • Low collector-em itter saturation voltage VcEisao . 0 .9 ± 0 .1
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2SB1177
Abstract: 2SD1747 2SD1747A
Contextual Info: Power T ransistors 2SD1747, 2SD1747A 2SD1747, 2SD1747A Silicon NPN Epitaxial Planar Type ft Package Dimensions Power Switching Complementary Pair with 2SB1177 •Features • • • • Unit ! mm 0.9 + 0.1- ■Absolute Maximum Ratings Tc=25°C Item Sym bol
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2SB1177
Abstract: 2SD1747 2SD1747A
Contextual Info: Power Transistors 2SD1747, 2SD1747A Silicon NPN epitaxial planar type For power switching Complementary to 2SB1177 Unit: mm 7.0±0.3 ● +0.3 0.8±0.2 1.1±0.1 1.0±0.2 ● Low collector to emitter saturation voltage VCE sat Satisfactory linearity of foward current transfer ratio hFE
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2sd17472sd1747a2sb1177 |
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Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1747, 2SD1747A Silicon NPN epitaxial planar type For power switching Unit: mm 2.5±0.2 (1.0) 1.1±0.1 Parameter Collector-base voltage (Emitter open) 2SD1747 0.75±0.1 0.4±0.1
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2SB117
Abstract: 2SB1177 2SD1747
Contextual Info: 2SB117' Power T ransistors 2SB1177 Silicon PNP Epitaxial Planar Type • Package Dimensions Power Switching Complementary Pair with 2SD1747 ■Features Unit ! mn • Low c o lle c to r-e im itte r sa tu ra tio n v o lta g e VcE<«t> • Good lin e a rity o f D C c u rr e n t gain
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2SD1747
Abstract: 2SD1747A
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1747, 2SD1747A Silicon NPN epitaxial planar type For power switching Unit: mm M Di ain sc te on na tin nc ue e/ d 3.5±0.2 (1.0) 2.5±0.2 (1.0) 12.6±0.3 7.2±0.3 1.1±0.1
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2SD1539
Abstract: d53 pnp transistor 2SC4714 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258 2SC2923
Contextual Info: Transistors Selection Guide by Applications and Functions TO-126 (D523K, D53) U Type (D41) V ceo MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F (D59) (V) 2SA1605 2SC3063 2SC2923 2SC4714 Chroma input V < n (V) lc (A) -0 .0 5
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o-126o-202t0-220o-220f+122sa16052sc22582sc30632sc29232sc47142sc39422sd1539d53 pnp transistor2sa1372sb10712sa13752sa1817
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sn76131
Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157
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2sc429gtm2sc4582sc458lg2sc503+162sc5042sc5102sc5122sc5192sc520a2sc594sn76131tlo72cptoshiba 2n3055m53207p2n3055 toshibakia7313apkia7640apla5530m5l8155ptbb1458b
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2sc5929
Abstract: MN1280 TRANSISTOR 2SC5929 3SK129 3SK97 2sc5928 2PG009 2SC5929 equivalent 2sk4000 2sd965 TRANSISTOR REPLACEMENT GUIDE
Contextual Info: 2009 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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responsibilixp08081xp08546xp0a554xp0d873+13xp0d874xp0d875xp0e5542sc5929mn1280transistor 2sc59293sk1293sk972sc59282pg0092sc5929 equivalent2sk40002sd965 transistor replacement guide
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2SD1755
Contextual Info: Power Transistors 2SD1755 2SD1755 Silicon NPN Epitaxial Planar Type High DC C urrent Gain Package D im ensions Pow er A m plifier Ii f e , Unit ! mn • Features • H ig h D C c u r r e n t g ain (Ii f e ) • G o o d lin e a r it y o f D C c u r r e n t g ain (h re )
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D2375
Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A
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125mw2sc46272sc50212sa1790+162sc46262sc46552sc48092sc52952sc48082sa1806d2375d1259ad1267ad1265atransistor 2sa19492sd2328atransistors selection guided1261ac37952sb1526
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2SD1755
Abstract: VUO60
Contextual Info: Power Transistors 2SD1755 2S D 1755 Silicon NPN Epitaxial Planar Type Package D im ensions High DC C urrent Gain hFE , Pow er A m plifier U n i t ! mm • Features • High DC current gain 3.7 max 7 .3 ma x. (I i f e ) 3 .2 m a x. 0. 9 ± 0 . 1 0.5max. • Good linearity of DC current gain (htE)
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LT32B
Abstract: 2SB1176 2SD1746
Contextual Info: 2SD 17 4 6 Power Transistors 2SD1746 Silicon N P N Epitaxial Planar Type Package Dim ensions Power Switching C om plem entary Pair with 2 S B 1 1 7 6 Unit ! mm • Features • Low collector-em itter saturation voltage V ce<&jo • High DC current gain (hFE) and good linearity
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2SC4714
Abstract: 2SA1817 2SD1539 2SA1605 2SC2258 2SC2923 2SC3063 2SC3942 2SC3945 2SC4717
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) Package (No.) Application Functions TO-126 (D 5 2 *, D53) U Type (D41) MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F
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2SC5072
Abstract: 2SC4698 4685 4686 2SC470-3 2SC4703 4670K 2SC4001 2SC4176 2SC4443
Contextual Info: - 196 - m s T y p e No. 2 SC 4666 tt « Manuf. J z B m SANYO TOSHIBA K S. 2SC 4667 Ä S. 2SC4443 2SC 4668 S tB ä 2SC4523 2SD1412 » S tc 2SC4406 2SC4250 2SC 4669 > fö T 2SC 4670 2SC 4671 / = 2SC 4672 □— A = 2SC 4674 B 4 "" # 2SC 4678 ÜL S. 2SC 4679
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2SC144
Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *
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t258-omifax062sc1442sd466+12sc5266
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B1548
Abstract: 2SB1299A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Power Transistors Application Functions VcEO lc (V) (A) lc !b (V) (A) (mA) T0-220(a) (D56) NPN TO-220F (D59) PNP ; NPN 1 < l 1 125 2SB954/A 60/80 2 < 2 2 200 2SB1052 < 1 2 400 < 1 2 200
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t0-220o-220f2sb954/a2sb1052+82sd14802sd1265/ao-220et0220d2sb1169/a2sb1170b15482sb1299a
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D1276A
Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Contextual Info: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463
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2sc46092sc48082sa18062sc4627+162sa17902sc46262sc46552sd23452sc4612sa1d1276ab1419d638 transistorb1361ic 1271ad1273d1985ab947ab11781985a
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2SC5936
Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and
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xp06501txp06531xp06545xp0a554+13xp0d873xp0d874xp0d8752sc59362sc6073panasonic transistor 2sc60732sc5929mn1280transistor 2sc60732sc5936 equivalent2sc6074transistor 2sc59292sc5928
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