2SB1176 Search Results

Contextual Info: Product specification 2SB1176 Features TO-252 Low collector-emitter saturation voltage VCE sat . 6.50 +0.2 5.30-0.2 Satisfactory linearity of forward current transfer ratio hFE. Unit: mm 2.30 +0.1 -0.1 +0.15 1.50 -0.15 +0.15 -0.15 +0.8 0.50-0.7 +0.1 0.60-0.1

2SB1176

Abstract: 2SD1746
Contextual Info: Power Transistors 2SB1176 Silicon PNP epitaxial planar type For voltage switching Complementary to 2SD1746 Unit: mm 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ 1.1±0.1 1.0±0.2 0.75±0.1 0.4±0.1 4.6±0.4 Parameter Symbol Rating Unit Collector-base voltage Emitter open

B13H

Contextual Info: Power Transistors 2SB1176 2SB1176 Silicon PN P Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2S D 1746 U nit ! mm • Features • L o w c o l l e c t o r - e m i t t e r s a t u r a t io n v o lta g e 3-7 max 7.3maX. 3.2max.

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1176 Silicon PNP epitaxial planar type For voltage switching Complementary to 2SD1746 Unit: mm 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ 1.1±0.1 1.0±0.2 0.75±0.1 0.4±0.1

2SB1176

Abstract: 2SD1746
Contextual Info: Power Transistors 2SD1746 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1176 7.0±0.3 • Absolute Maximum Ratings Parameter +0.3 1.0±0.2 0.4±0.1 2.3±0.2 4.6±0.4 1 2 1:Base 2:Collector 3:Emitter I Type Package 3 TC=25˚C

2SB1176

Abstract: 2SD1746
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1176 Silicon PNP epitaxial planar type For voltage switching Complementary to 2SD1746 Unit: mm Parameter Collector-emitter voltage (Base open) Emitter-base voltage (Collector open)

OF IC 723

Abstract: 2SB1176 2SD1746
Contextual Info: Power Transistors 2SD1746 Silicon NPN epitaxial planar type Unit: mm For power switching Complementary to 2SB1176 7.0±0.3 • Absolute Maximum Ratings Parameter +0.3 1.0±0.2 0.4±0.1 2.3±0.2 4.6±0.4 1 2 1:Base 2:Collector 3:Emitter I Type Package 3 TC=25˚C

Contextual Info: 2SB1176 Transistors Si PNP Power BJT Military/High-RelN V BR CEO (V)80 V(BR)CBO (V)130 I(C) Max. (A)5 Absolute Max. Power Diss. (W)1.3 Maximum Operating Temp (øC)150õ I(CBO) Max. (A)10u @V(CBO) (V) (Test Condition)100 V(CE)sat Max. (V)500m @I(C) (A) (Test Condition)4

2SB1176

Contextual Info: Transistors SMD Type Silicon PNP Epitaxial Planar Type 2SB1176 Features TO-252 Low collector-emitter saturation voltage VCE sat . 6.50 +0.2 5.30-0.2 Satisfactory linearity of forward current transfer ratio hFE. Unit: mm 2.30 +0.1 -0.1 +0.15 1.50 -0.15 +0.15

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1176 Silicon PNP epitaxial planar type For voltage switching Complementary to 2SD1746 Unit: mm 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ 12.6±0.3 7.2±0.3 1.0±0.2 0.75±0.1 0.4±0.1

2SB1176

Abstract: 2SD1746
Contextual Info: Power Transistors 2SB1176 2SB1176 Silicon PN P Epitaxial Planar Type Package Dimensions Power Switching Complementary Pair with 2S D 1746 U nit 1 mm . • Features • Low collector-em itter saturation voltage • Good linearity of DC c u rre n t gain 1 f e )

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SB1176 Silicon PNP epitaxial planar type For voltage switching Complementary to 2SD1746 Unit: mm 3.0±0.2 2.0±0.2 3.5±0.2 0˚ to 0.15˚ 1.1±0.1 1.0±0.2 0.75±0.1 0.4±0.1

2SD1539

Abstract: d53 pnp transistor 2SC4714 2sa137 2sb1071 2SA1375 2SA1605 2SA1817 2SC2258 2SC2923
Contextual Info: Transistors Selection Guide by Applications and Functions TO-126 (D523K, D53) U Type (D41) V ceo MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F (D59) (V) 2SA1605 2SC3063 2SC2923 2SC4714 Chroma input V < n (V) lc (A) -0 .0 5

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SB0774

Abstract: 2SC4714 2sc5340 2SA2004 2SB160 2SB642
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium-Power Transistors (continued) P a c k a g e (N o.) Application Functions TO-126 (D49 * , D50) U Type (D36) V cE (sail VcEO MT3 Type (D40) MT4 Type (D41 ) TO-202 (D51) T0-220(a)

transistor a2160

Abstract: transistor A1270 A1270 transistor transistor 2sD 4515 1431T transistor transistor A769 mn15151 mini circuits 15542 A1270 Y AN 5606K
Contextual Info: Type Number List • Integrated Circuits MOS LSIs M O S L S Is Page Type No, M N 5117 M N171605 32,42 AM N18P83221 43 M N 3671A 62 M N 5126 87 43 M N 3672 62 M N 5128 87 37 ,4 4,45 46 M N 1256 46 M N 1258 46 M N 1259 46 M N12861 46 M N 12862 46 M N 187124

D2375

Abstract: D1259A d1267a D1265A transistor 2SA1949 2sd2328a TRANSISTORS SELECTION GUIDE D1261A C3795 2SB1526
Contextual Info: Transistors Selection Guide by Packages • SS-Mini Type, SS-Mini Flat-Lead Packages (D1) c e o (V) lc ( m A ) \ \ V 15 10 (* 6V) 20 *A 2SC 5363 30 80 40 2SA1806 2SC4809 2SC5295 (65mA) 2SC4808 2SD2345 150 f 2SA1791 ! 2SC4656 185 I 2SB1463 I 2SD2240 2SD2240A

2SC4714

Abstract: 2SA1817 2SD1539 2SA1605 2SC2258 2SC2923 2SC3063 2SC3942 2SC3945 2SC4717
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Medium Power Transistors (continued) Package (No.) Application Functions TO-126 (D 5 2 *, D53) U Type (D41) MT2L Type MT3 Type MT4 Type (D44) (D45) (D46) TO-202 (D54) T0-220(a) (D56) TO-220F

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

B1548

Abstract: 2SB1299A
Contextual Info: Transistors Selection Guide by Applications and Functions • Silicon Power Transistors Application Functions VcEO lc (V) (A) lc !b (V) (A) (mA) T0-220(a) (D56) NPN TO-220F (D59) PNP ; NPN 1 < l 1 125 2SB954/A 60/80 2 < 2 2 200 2SB1052 < 1 2 400 < 1 2 200

D1276A

Abstract: B1419 d638 transistor b1361 ic 1271a D1273 D1985A B947A B1178 1985A
Contextual Info: Transistors Selèction Guide by Packages I SS Mini Type Packages (D1 ) \ Vceo(V) lc(mA) pc= i25mw 10 15 2SC4609 2SA1806 20 2SC4627 A 2SC5021 í 2SA1790 ' 2SC4626 2SC4655 15 30 50 80 100 , Preliminary 2SC4808 40 50 150 2SD2345 12SA1791 I 2SC4656 í 2SB1463

2SC5936

Abstract: 2SC6073 PANASONIC TRANSISTOR 2SC6073 2sc5929 MN1280 transistor 2SC6073 2SC5936 equivalent 2SC6074 TRANSISTOR 2SC5929 2sc5928
Contextual Info: 2009 ver.2 Discrete Semiconductors Selection Guide Request for your special attention and precautions in using the technical information and semiconductors described in this book 1 If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and

SB-116

Abstract: 2sb1163 2SB1181F5 2SB1182F5 2sb174 2SB1157 2SB1158 2SB1159 2SB1160 2SB1161
Contextual Info: - 78 - Ta=25eC, *Ep{ÎTc=25'C m g ffl & m Vcbo VcEO Ic(D C ) Pc Pc* (V) (V) (A) (W) (W) ICBO ViuaA/ ilik) »^B (¥) m \m i n / w te & hF E y (Ta=25eO) u / î,- VIIIOA/ (V) [*EP(itypffl] /n o v i W W le (A) W I b (A) 2SB1Í5? tö T PA -100 -100 -5 3 60 -50

2SB1176

Abstract: 2SD1746
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Power Transistors 2SD1746 Silicon NPN epitaxial planar type Unit: mm 0˚ to 0.15˚ 2.5±0.2 (1.0) 1.1±0.1 0.75±0.1 0.4±0.1 1.0±0.2 • Low collector-emitter saturation voltage VCE(sat) • Satisfactory liniarity of forward current transfer ratio hFE