b1182
Abstract: b11822 B 1182
Contextual Info: ROHM CO LTD 4DE » E3 7 f l S û tm 0ÜDSSb3 / T ransistors 2SB1182/2SB1182F5 - 2SE81182 2SB1182P lt ° $ ^ V 7 ^ 7 'b - t iP N P Epitaxial Planar PNP Silicon Transistors - 32V , vfjiH/Dimensions Unit :mm
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2sb1182/2sb1182f52se811822sb1182pb1182+2b11822b 1182
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2SB1182F5
Abstract: 2SB1182
Contextual Info: h 7 > y ^ ^ /Transistors 2SB1182 2SB1182F5 2SB1182/2SB1182F5 x t ° ^ ^ ' > 7 ^ 7 ° U - ^ - ^ P N P h 7 > y ' 7 $ 1 £ ijj5 S ^ jiilllffl/Low Freq. Power Amp. Epitaxial Planar PNP Silicon Transistors • 1 ) V Ce o = - 32V , v U = i > \ Ü È @ / D im e n s io n s Unit : mm)
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2sb1182/2sb1182f52sb11822sb1182f52sd1758 |
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SB-116
Abstract: 2sb1163 2SB1181F5 2SB1182F5 2sb174 2SB1157 2SB1158 2SB1159 2SB1160 2SB1161
Contextual Info: - 78 - Ta=25eC, *Ep{ÎTc=25'C m g ffl & m Vcbo VcEO Ic(D C ) Pc Pc* (V) (V) (A) (W) (W) ICBO ViuaA/ ilik) »^B (¥) m \m i n / w te & hF E y (Ta=25eO) u / î,- VIIIOA/ (V) [*EP(itypffl] /n o v i W W le (A) W I b (A) 2SB1Í5? tö T PA -100 -100 -5 3 60 -50
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2sb11572sb11582sb11592sb1160+102sb11612sb11622sb11632sb11762sd17472sb1177sb-1162sb1181f52sb1182f52sb174
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tc 144e
Abstract: ry 130-2 TZ 1148 413 a933s C2673 TA78 739 TZ 1148 mc 1302 L 930DT
Contextual Info: M H /T y p e Number List I' -y > v X £ /T ransistors 2S A785. 75 2S A 790. 78 2 S A 7 9 0 M .81
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tc 144ery 130-2tz 1148 413a933s+5c2673ta78 739tz 1148mc 1302 l930dt
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2SB1182F5
Abstract: OTR-2500 2SD1758F5 ILI 2302
Contextual Info: 2SD1758F5 h ~7> 's X $ /'Transistors w W r w E p ita x ia l P la n a r N P N f é jiìM • • $ 5 1 V c e o = 3 2 V , S ilic o n ^ J iS f lf fl/L o w T r a n s is to r F re q . P o w e r A m p . rf^ H / D im e n s io n s Unit : mm) Ic m a x = 2 A , Pc m a x = 1 0W0)>/Lffl* -T Zf 7 ' *
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2sd1758f52sb1182f5sc-631758f5+2otr-2500ili 2302
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2SB1182F5
Abstract: 2SD1758F5
Contextual Info: h7 9 £ /Transistors C n 2SD1758F5 | ' > U • 1 E p ita x ia l P la n a r N P N S ilic o n U S M ^ J iS fB ffl/L o w F re q . 3 > h 7 > y ^ T r a n s is to r P o w e r A m p . • ^ H ß '+ äslII/D im en sio n s U n it: mm 1 )V ceo =32V, Ic m ax =2A,
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2sd1758f52sb1182f5sc-63parameter100 |
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2SD1966
Abstract: 2SD1255M 2SB maintenance IMB6 2SC2808
Contextual Info: h -7 > y 7, $ /Transistors h z 7 > y Z $ $ H n h —W h 7 > y ^ ^ i p n — f t ü / T r a n s is t o r s Summary • h 7 v 3. $ /Transistors 2SA/2SB/2SC/2SC/2SD Type V ceo (V ) fT(M H z) Cob(pF) hFE Package Page 6.5 82-390 FTR 75 Icm - 1 .5 A 300 200 5.5
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2sa7852sa7902sa790m2sa806+112sa8212sa8252sa825s2sa832sa830s2sa8542sd19662sd1255m2sb maintenanceimb62sc2808
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