2SA83 Search Results

2SA837

Abstract: 2SC1667
Contextual Info: AOK AOK Semiconductor Product Specification 2SA837 Silicon PNP Power Transistors DESCRIPTION • With TO-3 package • Wide area of safe operation • Complement to type 2SC1667 APPLICATIONS • For radio frequency and power amplifier applications PINNING see Fig.2

2SC1669

Abstract: TO01 package 25T2 2SA839
Contextual Info: AOK AOK Semiconductor Product Specification 2SA839 S ilicon PNP Power Transistors DESCRIPTION • With TO-220 package • Complement to type 2SC1669 • High breakdown voltage APPLICATIONS - • Audio power amplifier applications I /*S> i • Driver stage amplifier applications

2SC1669

Abstract: TRANSISTOR 2SC1669 2SA839
Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon PNP Power Transistor 2SA839 DESCRIPTION •Collector-Emitter Breakdown Voltage : V BR CEO= -150V(Min) ·DC Current Gain : hFE= 40-240@ IC= -0.5A ·Complement to Type 2SC1669 APPLICATIONS ·Audio power amplifier applications.

2SA1015

Abstract: 2SA1358 2SA965 2SB1212 2SB560 sa1015 2SA934 2SA985 NEC 2SA1096 2SA385
Contextual Info: - 6 - m % « tt T y p e No. Manuf. = í¥ SANYO TOSHIBA m NEC B ÎL HITACHI * 2SA 479 m S * * ac s * 2S A 480 y.- - * 2S A 482 * * 2 S A 4 8 3 *-' 2SB596 2SA985 2SB507 2SB596 2SA985 2SB856 2SA836 2SA 4 ? 3 ^ ' * 2SA 474 ^ * 2SA 475 * 2 S A 4 7 7 ír. * 2SA 478 ^

2SA836

Abstract: Hitachi DSA002754
Contextual Info: 2SA836 Silicon PNP Epitaxial Application Low frequency low noise amplifier Outline 2SA836 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO –55 V Collector to emitter voltage VCEO –55 V Emitter to base voltage

2SA821

Abstract: 2SA805 2SA806 2SA832 2sa805a toyo 10KO 2SA802 2SA820
Contextual Info: £• tt A I P N P = J = * » » y u » - QUALITY RELIABILITY v Î j ï W Æ J T Ï h ^ V : Ï Physical Dimension (Ta=25°C) ! mm) (Absolute Maximum Ratings) is -§■ 3Ê -180 V CBO 2SA802, 2SA832 -130 2SA806, 2SA821 -210 V -130 -30 T stg 125 °C -5 5-1 2 5

transistor 2SA836

Abstract: 2SA836 Hitachi DSA00396
Contextual Info: 2SA836 Silicon PNP Epitaxial Application Low frequency low noise amplifier Outline TO-92 1 1. Emitter 2. Collector 3. Base 3 2 1 2SA836 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO –55 V Collector to emitter voltage

2SA836

Contextual Info: 2SA836 Silicon PNP Epitaxial HITACHI Application Low frequency low noise amplifier Outline TO-92 1 I 1. Emitter 2. Collector 3. Base 3 2 1 97 2SA836 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VcBO -5 5 V Collector to emitter voltage

2SA836

Abstract: 2SA836CTZ 2SA836DTZ PRSS0003DA-A SC-43A
Contextual Info: 2SA836 Silicon PNP Epitaxial REJ03G0629-0200 Previous ADE-208-316 Rev.2.00 Aug.10.2005 Application Low frequency low noise amplifier Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings

2SA830

Contextual Info: h 7 > y ^ ^ / T ransistors 2SA830/2SA830S 2SA830 2 3 / ^ 3 3 Q pnp 3 v u = i> & ^ < 7 ^ > ^ ffl/M e d iu m Power Amp. & Switching Epitaxial Planar PNP Silicon Transistors • ^ f i ^ S O / D i m e n s i o n s U nit : mm 1) ? - U > h > t i ^ T g h FET ' * 5 o

2SA transistor

Abstract: high current Darlington pair IC
Contextual Info: 2SA830S Transistor, PNP, Darlington pair Features Dimensions Units : mm • available in SPT (SC-72) package • Darlington connection provides high gain, typically hFE = 20000 at lc = -100 mA 2SA830S (SPT) • built-in resistance of approximately 4 k il between base and emitter

2SD852K

Contextual Info: 2SB852K / 2SA830S 2SD1383K / 2SC1645S Transistors I High-gain Amplifier Transistor —32V, —0.3A 2SB852K / 2SA830S •F e a tu re s 1 ) Darlington connection fo r high DC current gain. 2 ) Built-in 4 k Q resistor between base and emitter. 3 ) Complements the 2SDl383Ki&#39;2SD1645S.

Contextual Info: 2SA836 Silicon PNP Epitaxial REJ03G0629-0200 Previous ADE-208-316 Rev.2.00 Aug.10.2005 Application Low frequency low noise amplifier Outline RENESAS Package code: PRSS0003DA-A (Package name: TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 Absolute Maximum Ratings

IMX5T108

Abstract: DTC144EN 4AE12 MP5C02 2SB1043 ICP-S2.3TN dta115ef DTA144TSATP DTC124EVA mmst8598t146
Contextual Info: Transistors •Maintenance product list Maintenance model Alternate model Maintenance model Alternate model 2SA1543M 2SA933ASTP 2SC5040K 2SC2412KT146 2SA1549 2SA830STP 2SC5072 2SC4617TL 2SA1554 2SA821STP 2SD1469M 2SD1865TV2 2SA1809 2SA1776TV2 2SD1778 2SD1855

2SA836

Abstract: Hitachi DSA0076
Contextual Info: 2SA836 Silicon PNP Epitaxial ADE-208-316 Z 1st. Edition Mar. 2001 Application Low frequency low noise amplifier Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SA836 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage

s2v 92

Contextual Info: H ITACHI 2SA836 SILICON PNP EPITAXIAL LOW FREQUENCY LOW NOISE AMPLIFIER 4.2 Max ¡>2 Max 0 5 Max t . b n ii ic r 2. CoJJector X Ba*c il» mu» {JE0EC TO-92) • ABSOLUTE MAXIMUM RATINGS Ta=23»C) Item MAXIMUM COLLECTOR DISSIPATION CURVE 2SAS36 Symbol Unit

2SA836

Contextual Info: Transys Electronics L I M I T E D TO-92 Plastic-Encapsulated Transistors 2SA836 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.2 W (Tamb=25℃) 2. COLLECTOR Collector current A ICM: -0.1 Collector-base voltage V V(BR)CBO : -55 Operating and storage junction temperature range

2SD1383

Abstract: 2SA830S 2SB852K 2SC1645S 2SD1383K
Contextual Info: Transistors 2SB852K / 2SA830S 2SD1383K / 2SC1645S 96-118-B20 (96-205-D20) 280 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the

2SA838

Abstract: 2SA0838 2SC1359
Contextual Info: Transistors 2SA0838 2SA838 Silicon PNP epitaxial planar type For low-frequency amplification Complementary to 2SC1359 Unit: mm 4.0±0.2 5.1±0.2 5.0±0.2 • Features 0.7±0.2 • High transfer ratio fT 12.9±0.5 0.7±0.1 ■ Absolute Maximum Ratings Ta = 25°C

2SA830S

Abstract: 2SB852K 2SC1645S 2SD1383K
Contextual Info: Transistors 2SB852K / 2SA830S 2SD1383K / 2SC1645S 96-118-B20 (96-205-D20) 280

2SA830S

Abstract: 2SB852K 2SD1383K 2SD1645S T146
Contextual Info: 2SB852K / 2SA830S Transistors High-gain Amplifier Transistor −32V, −0.3A 2SB852K / 2SA830S zExternal dimensions (Unit : mm) zFeatures 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD1383K / 2SD1645S.

2SD852

Abstract: 2SD1383K 2SA830S 2SC1645S T146 2SD852K
Contextual Info: 2SD1383K / 2SC1645S Transistors High-gain Amplifier Transistor 32V , 0.3A 2SD1383K / 2SC1645S zFeatures 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD852K / 2SA830S. zExternal dimensions (Unit : mm)

2SA836

Abstract: transistor 2SA836 VCE-12
Contextual Info: 2SA836 2SA836 TRANSISTOR PNP TO-92 FEATURES Power dissipation 1. EMITTER PCM : 0.2 W (Tamb=25℃) 2. COLLECTOR Collector current ICM: -0.1 A Collector-base voltage V V(BR)CBO : -55 Operating and storage junction temperature range 3. BASE 1 2 3 TJ, Tstg: -55℃ to +150℃

2SC1359

Abstract: 2SC1359 C 2SA838
Contextual Info: Transistor 2SC1359 Silicon NPN epitaxial planer type For high-frequency amplification Complementary to 2SA838 Unit: mm • Features Optimum for RF amplification of FM/AM radios. High transition frequency fT. ■ Absolute Maximum Ratings Ta=25˚C Parameter