2SD1383 Search Results

2SB852K

Abstract: 2SD1383K T146
Contextual Info: 2SB852K Transistors High-gain Amplifier Transistor −32V, −0.3A 2SB852K zExternal dimensions (Unit : mm) zFeatures 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD1383K. 2SB852K

Contextual Info: 2SD1383K h "7 > y 7. $ / J ransistors Xt:^^rV7^7V—^-ff^-/N-$-:E-;UKNPN y 'J-1 > & - 2SD1383K V _ > h > h 7 > y Z $ r a i i t e & 7 - i " j 3 - > 7 f f l/ H i g h G a in A m p . & S w itc h in g Epitaxial Planar Super Mini-Mold NPN Silicon Darlington Transistor

2SB852K

Abstract: 2SD1383K
Contextual Info: High-gain Amplifier Transistor 32V , 0.3A 2SD1383K Features 1) Darlington connection for high DC current gain. 2) Built-in 4k resistor between base and emitter. 3) Complements the 2SB852K. Dimensions (Unit : mm) 2SD1383K Packaging specifications

2SD852K

Contextual Info: 2SB852K / 2SA830S 2SD1383K / 2SC1645S Transistors I High-gain Amplifier Transistor —32V, —0.3A 2SB852K / 2SA830S •F e a tu re s 1 ) Darlington connection fo r high DC current gain. 2 ) Built-in 4 k Q resistor between base and emitter. 3 ) Complements the 2SDl383Ki'2SD1645S.

4606

Abstract: 2SD1383K MJE447 Darlington npn darlington 1384 5000E-9
Contextual Info: SPICE PARAMETER 2SD1383K * 2SD1383K DARLINGTON NPN BJT model * Date: 2006/12/13 *C B E .SUBCKT 2SD1383K 1 2 3 Q1 1 2 4 Q1model Q2 1 4 3 Q2model 1.350 R1 4 3 4k .MODEL Q1model NPN + IS=30.00E-15 + BF=400 + VAF=50 + IKF=.1221 + ISE=30.00E-15

Contextual Info: 2SB852K Transistors High-gain Amplifier Transistor −32V, −0.3A 2SB852K zExternal dimensions (Unit : mm) zFeatures 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD1383K. 2SB852K

2SD1383K

Abstract: 2SD1402 2SD1407 2SD1416 2SD1390 2SD1376K 2SD1377K 2SD1378 2SD1379 2SD1380
Contextual Info: - 246 - Ta=25cC, *Ep(äTc=25‘C TJ 2SD1376K 2SD1377K 2SD1378 2SD1379 0Ä 2SD13S0 Cf — 2SD1381 2SD1382 2SD1383K 2SD1384 2SD1385 2SD139Q 2SD1391 2SD1392 2SD1394 2SD1395 2SD1396 2SD1397 2SD1398 2SD1399 □— A BÄ D— A n— A □— A O— A D — töT

D3S 59

Contextual Info: O a 2SD1383K / T ransistors b~7 U I O o O I V *-y > h > # * Epitaxial Planar NPN Silicon Transistor (Darlington) il/H ig h Gain Amp. • ¥ i% 1) • • Dimensions (Unit : mm) ? - ' ) > h > S » T lh F E 7 A 5 . h F E = 5 0 000 (Typ.) (at 100mA) i . i -S:?

Contextual Info: 2SB852K Transistors High-gain Amplifier Transistor −32V, −0.3A 2SB852K External dimensions (Unit : mm) Features 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD1383K. 2SB852K

2SD1383

Abstract: 2SA830S 2SB852K 2SC1645S 2SD1383K
Contextual Info: Transistors 2SB852K / 2SA830S 2SD1383K / 2SC1645S 96-118-B20 (96-205-D20) 280 Appendix Notes No technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of ROHM CO.,LTD. The contents described herein are subject to change without notice. The specifications for the

2SA830S

Abstract: 2SB852K 2SC1645S 2SD1383K
Contextual Info: Transistors 2SB852K / 2SA830S 2SD1383K / 2SC1645S 96-118-B20 (96-205-D20) 280

2SA830S

Abstract: 2SB852K 2SD1383K 2SD1645S T146
Contextual Info: 2SB852K / 2SA830S Transistors High-gain Amplifier Transistor −32V, −0.3A 2SB852K / 2SA830S zExternal dimensions (Unit : mm) zFeatures 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD1383K / 2SD1645S.

2SD852

Abstract: 2SD1383K 2SA830S 2SC1645S T146 2SD852K
Contextual Info: 2SD1383K / 2SC1645S Transistors High-gain Amplifier Transistor 32V , 0.3A 2SD1383K / 2SC1645S zFeatures 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD852K / 2SA830S. zExternal dimensions (Unit : mm)

Contextual Info: High-gain Amplifier Transistor 32V , 0.3A 2SD1383K Features 1) Darlington connection for high DC current gain. 2) Built-in 4k resistor between base and emitter. 3) Complements the 2SB852K. Dimensions (Unit : mm) 2SD1383K Packaging specifications

Contextual Info: 2SB852K / 2SA830S 2SD1383K / 2SC1645S Transistors High-gain Am plifier Transistor —32V, — 0.3A 2SB852K / 2SA830S I •F e a tu re s 1 ) Darlington connection for high DC current gain. 2 ) Built-in 4 kQ resistor between base and emitter. 3 ) Complements the 2SD1383K/2SD1045S.

Contextual Info: 2SD1383K Transistor, NPN, Darlington pair Features Dimensions Units : mm • available in SMT3 (SMT, SC-59) package • package marking: 2SD1383K; W ^, where ★ is hFE code Darlington connection provides high hFE = 50,000 (typically) at 100 mA • 2SD1383K (SMT3)

2SB852K

Abstract: 2SD1383K T146
Contextual Info: 2SD1383K Transistors High-gain Amplifier Transistor 32V , 0.3A 2SD1383K zDimensions (Unit : mm) zFeatures 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SB852K. 2SD1383K zPackaging specifications

Contextual Info: N /Transistors 2SD1383K 2SD 1383K Epitaxial Planar NPN Silicon Transistor Darlington & ?im *S tl/H igh Gain Amp. • rf& B l/D im ensions (U n it: mm) 1) 9 - 'J > f- v ii t iT 'a h F E - e if c S o hFE=50 000 (Typ.) (at 100mA) 0 . 8 ± 0.1 u 2) B E lC ft4kQ <D ffiS l«rtiR o

2SD852

Abstract: 2SD1383K T146 2sd852 transistor
Contextual Info: 2SD1383K Transistors High-gain Amplifier Transistor 32V , 0.3A 2SD1383K zExternal dimensions (Unit : mm) zFeatures 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD852. 2SD1383K

transistor CR NPN

Abstract: 2sd transistors equivalent
Contextual Info: 2SD1383K Transistor, NPN, Darlington pair Features Dimensions Units: mm • available in SMT3 (SMT, SC-59) package • package marking: 2SD1383K; W * , where ★ is hFE code • Darlington connection provides high hFE = 50,000 (typically) at 100 mA • built-in resistor of approximately 4 k£2

sn76131

Abstract: tlo72cp TOSHIBA 2N3055 M53207P 2N3055 TOSHIBA KIA7313AP kia7640ap LA5530 M5L8155P TBB1458B
Contextual Info: ACTIVE ELECTRONICS COMPONENTS CROSS REFERENCE GUIDE 2SC429GTM 2SC458 2SC458LG 2SC503 2SC504 2SC510 2SC512 2SC519 2SC520A 2SC594 2SC699A 2SC780 2SC809-1 2SC945 2SC3012 2SC3074 2SC3114 2SC3115 2SC3116 2SC3117 2SC3134 2SC3135 2SC3138 2SC3143 2SC3144 2SC3145 2SC3157

2SD1388

Abstract: 2SD1387 2SD1370 2SD1369 2SD1307 2SD1331 2SD1360 2SD1346 2SD1333 2SD1371
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 45W 2SD1301 1500 5 2A 130 3-12 10 1A (Tc=25ºC) 2SD1302 25

2SC3558

Abstract: 2SD1431 2SD1209 2SD2061 2SC2021 2SD1407 2sd 1507 2SD1488 k 1487 2SD2532
Contextual Info: - 242 - % it Type No. 2SD 1477 2SD 1478 ^ 2SD 1479 4 2SD 1480 *• 2SD 1481 2SD 1482 2SD 1483 ¿ r 2SD 1484 r 2SD 1485 ^ 2SD I486 2SD 1487 f 2S0 1488 * 2SD 1489 2SD 14902SD 1491 , 2SD 1492 2SD 1493 2SD 1494 ^ 2SD 1495 2SD 1496 " 2SD 1497 ' 2SD 2SD 2SD 2SD

RTIP144C

Abstract: RTIN141C RTIN141S 2SD947 equivalent 2SD612K equivalent of transistor 2SA1115 RTIN241C rtip241 2sd880 equivalent RTIN140C
Contextual Info: m&ttm -urn h "7 > v X £ /T ra n sisto rs ddp h 7> y of Transistor Equivalent Products S M t r o iS H li, L T 2 fiJffl< t £ £ i \ LT IS * * * ' 6 S & It should be borne in mind that following listings are made according to the transistors’ maximum ratings.