1383K Search Results

Contextual Info: N /Transistors 1383K 2SD 1383K Epitaxial Planar NPN Silicon Transistor Darlington & ?im *S tl/H igh Gain Amp. • rf& B l/D im ensions (U n it: mm) 1) 9 - 'J > f- v ii t iT 'a h F E - e if c S o hFE=50 000 (Typ.) (at 100mA) 0 . 8 ± 0.1 u 2) B E lC ft4kQ <D ffiS l«rtiR o

Contextual Info: 1383K h "7 > y 7. $ / J ransistors Xt:^^rV7^7V—^-ff^-/N-$-:E-;UKNPN y 'J-1 > & - 1383K V _ > h > h 7 > y Z $ r a i i t e & 7 - i " j 3 - > 7 f f l/ H i g h G a in A m p . & S w itc h in g Epitaxial Planar Super Mini-Mold NPN Silicon Darlington Transistor

2SD852K

Contextual Info: 2SB852K / 2SA830S 1383K / 2SC1645S Transistors I High-gain Amplifier Transistor —32V, —0.3A 2SB852K / 2SA830S •F e a tu re s 1 ) Darlington connection fo r high DC current gain. 2 ) Built-in 4 k Q resistor between base and emitter. 3 ) Complements the 2SDl383Ki&#39;2SD1645S.

TA143E

Abstract: 2SD 647 transistor TRANSISTOR 2SC 733 C4672 144EK 113ZE Transistor 2SA 2SB 2SC 2SD 114EU TC114EKA TA123JE
Contextual Info: b ÿ > y Z ? W & - 1èm h "7 > y Z > £ /Transistors h ”7 > y Z p n — H ^ / T r a n s i s t o r s S u m m a r y • POWER MOSFET Part No. A p p lica tio n V d s s V PD(W) I d (A) P a cka ge VGS(th)(V) V d s (V) Page i D(mA) 2SK1973F5 60 2 10 2 .0 - 4 .0

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

d2396

Abstract: TRANSISTOR PNP B1443 D2396 equivalent B1569A TRANSISTORS PNP 50 V 1 A B1443 B1186A transistor c5147 b1344 transistor equivalent b1443 K2460
Contextual Info: Transistors Transistors Products Tables Surface mounting types • M O S FET • Automatic mounting is possible : Products are housed in a package which supports automatic mounting. • 4V drive types : Direct drive from 1C allows reduction of components elimination of buffer transistor .

Contextual Info: 2SB852K / 2SA830S 1383K / 2SC1645S Transistors High-gain Am plifier Transistor —32V, — 0.3A 2SB852K / 2SA830S I •F e a tu re s 1 ) Darlington connection for high DC current gain. 2 ) Built-in 4 kQ resistor between base and emitter. 3 ) Complements the 1383K/2SD1045S.

transistor b1184

Abstract: B1474 C5072 C4938 b1184 transistor 3722K c4998 2SB1051 K2306 2sc4937
Contextual Info: Transistor Quick reference I Leaded ^ F ’ i i I: Package -Application Application * ^ * VrFR iV EM 3 | UM T | SM T *VnSR 2S C 408 1LN 40 Low Noise | CPT F5 | F3 > / 2S A 1037 A K L N E ) \ 2 S C 2 4 1 2KLNÎE1 2S C 2412K LN ÌR S Ì /2 S A 1 4 5 5 K

transistor A1515

Abstract: Transistor 2SA 2SB 2SC 2SD d2172 a1515 transistor transistor D1292 h7195 rkm 34 transistor C1741A IC TB 1238 AN transistor b1184
Contextual Info: Explanations • Standard Products, Semi-standard Products, Custom Products To make it easier for the customer to select the type of product best suited to his needs, we offer transistors, diodes, light-emitting diodes sensors, lasers diodes, and resistors in three types: 1 standard, (2) semi-standard, and

2SC 1885

Abstract: 2sc low noise
Contextual Info: T ransistors From very small EM3 type package to high power PSD package the power dissipation is equivalent to TO-220, Pc=35W transistors. EM3 • UMT • SMT Three types are available to allow the most suitable package depending on size specifications.