2SD852 Search Results

2SD852

Abstract: 2SD1383K 2SA830S 2SC1645S T146 2SD852K
Contextual Info: 2SD1383K / 2SC1645S Transistors High-gain Amplifier Transistor 32V , 0.3A 2SD1383K / 2SC1645S zFeatures 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD852K / 2SA830S. zExternal dimensions (Unit : mm)

2SD852

Abstract: 2sd852 transistor
Contextual Info: 2SD852 2SD852 NPN X fc? 9 + i«' ~J* i s I Z X 'S h NPN Silicon Epitaxial Transistor , 7* ^ "J ^ , HH. h _ » • * • “ ») Low Speed High Current Switching Industrial Use ^7 o r - ' ) >}■ High DC current gain. O3 V 9 Low collector saturation voltage.

2SD852

Abstract: 2SD1383K T146 2sd852 transistor
Contextual Info: 2SD1383K Transistors High-gain Amplifier Transistor 32V , 0.3A 2SD1383K zExternal dimensions (Unit : mm) zFeatures 1) Darlington connection for high DC current gain. 2) Built-in 4kΩ resistor between base and emitter. 3) Complements the 2SD852. 2SD1383K

STK411-230E

Abstract: STK411-220E stk442-130 PAL005A UPC2581V FN1016 STRG6153 RSN313H25 STK407-070B MCZ3001D
Contextual Info: R Serving The Electronic Industry Since 1982 Ordering at Dalbani is so easy Go to : www.dalbani.com Search & check stock Busque y revise nuestro inventario A Search Enter your Item number and click GO Entre el numero del producto y haga clicsobre GO The system will take you straight to the Item that you are looking for

2SD852K

Contextual Info: 2SB852K / 2SA830S 2SD1383K / 2SC1645S Transistors I High-gain Amplifier Transistor —32V, —0.3A 2SB852K / 2SA830S •F e a tu re s 1 ) Darlington connection fo r high DC current gain. 2 ) Built-in 4 k Q resistor between base and emitter. 3 ) Complements the 2SDl383Ki'2SD1645S.

Contextual Info: 2SB852K / 2SA830S 2SD1383K / 2SC1645S Transistors High-gain Am plifier Transistor —32V, — 0.3A 2SB852K / 2SA830S I •F e a tu re s 1 ) Darlington connection for high DC current gain. 2 ) Built-in 4 kQ resistor between base and emitter. 3 ) Complements the 2SD1383K/2SD1045S.

2SB415

Abstract: 2SB 710 2sc1061 2sd524 2sb504 HD68P01 2sb507 2sa762 2sc827 2SC1362
Contextual Info: V W Ki * 91 ^ # b h 7 >->" X ? i, t ^ X M X V M W X M £ (E I A J i: 2 S W Z x R m z t i S , x t iz J :'), ? 4000H£< * ^ t i X t 4 ', ^ i t . : w ° n l l ±, Z iih J M I1 L -C A J t t , g 4 - ? 4 M # c o ( , c o T ' & , I W H H c o f ^ 6 i> w 1, ^ & >) b ') £ i ~

y51 h 120c

Abstract: bd124 KT368 BFQ59 Silec Semiconductors BD214 al103 AFY18 bd192 MM1711
Contextual Info: Towers' International Transistor Selector ! o Towers’ International Transistor Selector Specification data for the identification, selection and substitution of transistors by T D Towers, MBE, MA, BSc, C Eng, MIERE Revised Edition U pdate Three London: NEW YORK

2SD883A

Abstract: 2SD883 2SD853 2SD848A 2SD898B 2SD808 12073A 2SD887 2SD852 2SD815
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SD801 800 7 6A 50W(Tc=25ºC) 150 3.5-12 5 4A 2SD802 900 7 6A 50W(Tc=25ºC) 150

FN1016

Abstract: 2sC9012 on4409 on4673 ON4843 C9012 S2000A3 bul310xi 2SD5080 MN1016
Contextual Info: ТРАНЗИСТОРЫ БИПОЛЯРНЫЕ ИМПОРТНЫЕ Наименование 2N1112 2N1212 2N1217 2N1711 2N2219A 2N2222 Metal 2N2222A 2N2222Aмет 2N2369 2N2369A 2N2646 2N2905A 2N2905Aпластик 2N2907 2N2907(Metal) 2N3055 2N3055 2N3440 2N3773