PWS350 Search Results

2SC41

Abstract: 4181A 2SC4181 2SC4181A
Contextual Info: NEC r -t S • is — f-~ 2SC41 81,41 81A =7> i> 7. 3 r / V Î7 ï ï t Silicon Transistors ^ NPN x t 4# £ W [ U ^ { Ì I mm » O i ^ h p £ "C "^- o 2 .1 + 0 .1 hFE = 1000—3200 @ V Ce = 1.25 + 0.1 5.0 V, Ic = 1.0 mA o iâ V CE(sat)T"i_ o VCE(sat) = 0.07 V TYP. @Ic /I b = 50 m A /5 .0 mA

2sc3478a

Abstract: 2SA1376 PA33 A1376
Contextual Info: SEC Ì ? f / \ Silicon Transistors f 7 2 S A 1 3 7 6 , 1 3 7 6 A PNP Epitaxial Transistor High Voltage Amplifier PACKAGE DIMENSIONS ^/FEA TU RES Unit : mm o ftS E tt. V ceo : ~180 V/ —200 V (2SA1376/2SA1376A) O h FE « U t O ') — T / î H ^ f é O 2 S C 3 4 78/ 2 S C 3478A t

transistor P33

Abstract: KSC2749 KSC2690 KSC2690A 3a npn to126 transistor
Contextual Info: SAMSUNG SEMICONDUCTOR INC KSC2690/2690A 14E D j T 'im m a 0007S7G T NPN EPITAXIAL SILICON TRANSISTOR T - 3 3 - o J AUDIO FREQUENCY, HIGH FREQUENCY POWER AMPLIFIER • Complement to KSA1220/KSA1220A ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic i Symbol ' Rating

11B2 zener diode

Abstract: PA1428H uPA1428H LTNH PWg300 PA142SH c1986
Contextual Info: NEC ELECTRONICS INC Tfl DÊJ b427SSS 0 0 n i 3 1 1 T ^S'^ZS ¿/ P A 1 4 2 8 H NPN SILICON E P I T A X I_AL.'. . P O W E R LOW S P E E D T R A N S I S TOR .ARRA SWITCHING DARLINGTON DESCRIPTION • The ¡i PA1428H is an array of four darlington power tra n s isto rs . I t is

11B2 zener diode

Abstract: zener 11B2
Contextual Info: N E C E L E C T R O N I C S INC Tfl D Ë J b427SSS 0 0 n i 3 1 T POWER NPN T ' TRANSISTOR ARRAY ¿¿PA1428H S I L I C O N E P I T A X I_A L . . . P 0 WE R T R A N S I S T O R .A R R A > LOW S P E E D S W I T C H I N G D A R L I N G T O N DESCRIPTION ‘

ci 3060 pt

Abstract: 2SA1627 transistor 2SA1627 2SA162
Contextual Info: SEC '> ' =1 > Silicon Transistor m + T fS rtX 2SA1627 n > b=7 > '^ 7.9 PN P = PNP Silicon Triple Diffused T ran sisto r High Speed High V oltag e Switching m # -Ç -fô lü IíE T - fo o V c e o = — 600 ^ mm) 7 .0 MAX. V o x > f 7 f v 7 X h°— K * si t v ^

IC MAX 797

Abstract: 2SD608 2SB628 S3V77 251C
Contextual Info: 2SD608/2SB628 2SD 608/2SB 628 N PN /PN P x >J n V h ÿ V ' / X ? / N P N / P N P SILICON EPIT A X IA L TRANSISTOR y ^ " ffl/A u d io Frequency Power / i & i Ê M Z 'i "j 8 S/FEA TU RES • *Hf50/PACKAGE DIMENSIONS Unit:mm 100~150 Wffl-’'" V —T V 7‘CO K iM 'v lg i: L T S ig o

FP1J3P

Abstract: T108 T460 T540 JS84 kgb ms t0462 se 0138 A2755
Contextual Info: NEC m + — S 7 • S s — h* C om po und Tran sisto r T iv r x f W S K F*3 I c P N P x # p ; - x T O : mm K M At X ’c o m tì K 7 » k: it 0 0 .7 > i 'f r ^ 'ô I f i Ë T 't o 2.8±0.2 1.5 OF7-Î ;ïiÎ'M i /; o i ->„ g LO o> 5 o r> g LO - 4 2

ha 1452 Amplifiers

Abstract: 702 sot 23 100Z3
Contextual Info: NPN SILICON HIGH FREQUENCY TRANSISTOR NE680 SERIES FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT =10 GHz • LOW NOISE FIGURE: 1.7 dB at 2 GHz ;• .6 dB TYP at 4 GHz • HIGH ASSOCIATED GAIN: 12.5 dB at 2 GHz 3.0 dB TYP at 4 GHz • EXCELLENT LOW VOLTAGE LOW CURRENT PERFORMANCE

Power supply ATX 350W p4

Abstract: ATX 350W p4 atx 400 P4 p4 atx 400w Power supply ATX 400W p4 Power supply model ATX 300W p4 atx 400 power supply atx 400w p4 Power supply ATX 300W p4 Power supply model ATX 400W p4
Contextual Info: AMC-262 Industrial Computing Platform Partner 6-slot Wallmount Chassis Full-size / Half-size Cards Supports Features Floppy Disk Drive x 1 6-slot Wallmount Chassis Supports 6-slot ISA/PICMG Bus Passive Backplanes Supports Standard PS2 Power Supply Up To 400W

Contextual Info: KSA1378 PNP EPITAXIAL SILICON TRANSISTOR LOW FREQUENCY POWER AMPLIFIER • Complement to KSC3488 • Collector Dissipation Pc =300mW ABSOLUTE MAXIMUM RATINGS Ta=25°C Characteristic Symbol Collector-Base Vbltage Collector-Emitter Voltage Emitter-Base Voltage

2SB810

Abstract: JIS211 transistor C982 C382 n1j 048 ic 6116 IC 7824 ST
Contextual Info: V y □ > h 7 > y X ^ Silicon Transistor 2SB810 P N P x \£ 2 * 4$ V y ' j a > h 7 > v X 5 f *M $ B I « # t : mm * - b v h x H ï îfiO i£ J B  lÜ * f fl,  * Œ * * 3 t Sg » 0> * - * K 7 -T 7 , * <& {*#» K 5 < O ig h F E T 4 .0 ± 0 .2 U T ftiS T T o

2SB805

Abstract: 2SB806 2SD1006 2SD1007 2SB806-KP
Contextual Info: S ilic o n T ra n s is to rs 2SB805/2SB806 P N P i m i; =1 > h ^ + it o o -t —r ' 4 tfè,Ts-^> K y -i '</T ^ F 7 ” -y l ' i c S i S T - t o 2 S D 1 0 0 6 , 2 S D 1 0 0 7 t=i>y" 'S 9 > 9 ' T to T a = 2 5 °C ) m § 99 I V • - î — »§• x a V 9 9 ■ x- l ~y 9 FbTÜJÎ

pw510

Abstract: H150 TC-6178
Contextual Info: 7 s— • S '— S h- SEC Com pound Transistor i i f / v r z BA1A3Q fJtrt I c N P N x V=3> Y = 7 > i> ^ 4# f t £ ffl£ [ U o / < ^ f L T ^ - iì ! mm * 2 . 0 ± 0.2 i : 1~ 0 ^ 6" (R i = 1.0 kQ, R 2= 10 kQ) 46” O BN 1A3Q £ =i > 7° ij / > ^ ij T lt if f l

ail4m

Abstract: FIM1L4M 1h0565 M31 marking transistor TRANSISTOR IFW la 5531 FN1L4M
Contextual Info: ± I /7N I ih Compound Transistor F N 1 L4 M i&ijtrtMPNPxfc 4# .' mm it o ^ r x L ^ ^ L T v ^ - r . 2 . 8 + 0.2 R i = 47 k£2, R 2= 47 kQ) o F A 1 L 4 M t 3 y y >J 9 y ? ') (T a = H £ to 2 5 °C ) B& g ^r 5e #r # z V CBO -6 0 V =i W 9 9 • J- = -y 9m 'M l±

O552

Abstract: T108 asti 3773 GA1L3N la 5531 L092 GN1L3N mol3
Contextual Info: i. I «\ / v r * l?N I i ï T ÎK r NEC C o m p o u n d T ran sis to r GN1L3N ffif/L r t i e p n p :n t f * * y□v ^ v i* * :? n Sfc U v ^ to R i = 4 .7 k fì, R 2= 10 k£2 o G A 1 L 3 N t 3 > y }) / > ? i) X " itm X"ê i i ~ (Ta = 25 °C) H g 9 n u ?

JRC 45800

Abstract: 0620 jrc jrc 13600 jtp sot 143 JRC 6005 4560 d JRC jrc 0620 4560 JRC JRC 76600 transistor 2sc 5586
Contextual Info: SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR NE687 SERIES FEATURES . L O W N O IS E : 1.3 dB A T 2 .0 G H z • L O W V O L T A G E O P E R A T IO N • EASY T O M ATCH • H IG H G A IN B A N D W ID T H P R O D U C T : f ï o f 13 G H z • A V A IL A B L E IN S IX L O W C O S T P L A S T IC S U R F A C E

2SC2787

Abstract: T460-8525 TN 0776 nec 8525 LT1M
Contextual Info: ? — S 7 • S /— h S ilic o n T ra n s is to r 2SC2787 N PN X J r i s T J i ' M i ' ' -1 > b ^ F M / A M 7 ì> * # R F , M IX ., C O N V ., O S C ., IF / B ft # { 2 ; : rnm ) o F M / A M ÿ x ^ - iO R F , W 3 ^ # i i M * Ê * t « * 5 Ë t è ' 5 (T a =

PA1400H

Abstract: ic 8705 IC-8705 436AH nec 8705 PA1436AH upa1436ah WT-540 4 W 620
Contextual Info: C o m p o u n d P o w e r T ran sistors /¿PA1 4 3 6 A H N P N X '> 7 \ * M > jL m y°'i > ? • 9 4 y°? 4 ? • y r ? -> $ 'i • e i - ? # • ' ) U - - c r ^ ¡ g i > M T m m ^ f v t r • y ^ # - f e # c o g Æ # f f < 7) vu/4 k • L T b ° - i ?* ^ i 7 ) - A - ë t ^ ''V P X 't ï t a f f l i â t  * ÿ ÿ | Î ¥ L É 't o

AD1F3P

Abstract: AD1A3M AD1L3N AD1F2Q AD1A4M PA33 AD1L2Q AD1A4A
Contextual Info: m ^ n "Yi m Æ * £ tfl W o + o * TS S3 A >4 s 3 p| FR 3 Pi FH X nn ns H sTO O a •p o Ö o <; CO o < o O < O CO o o H > II to cn o H TO O 2.2 V >fr § Â AD1F3P ii H /// 4.7 fm M s A 1 >< 3 Pi FH AD1L3N IS Vr Pi Pit » » m » AD1A4M V Pt PS Ü 4.7 p| S+

transistor DK RN

Abstract: 7 HL 05 PA33
Contextual Info: *PWS10 ms , , Du t y C y c l e ^50 % OJ t\3 A 1 U V H /// Vr V? si >j c_ m O O CD CO o m 5 o m o cn o xi > H O c/ o J> End ji­ co CD CO ¡2 T > C-. « > J3 o o AR1A3M •X tì« I H I w SO >1 m 4 ani* ctcr o 3 Fc. M . a - 3 3 pì+ jì Pi £+ a- Í r\

transistor lt 186

Abstract: NPN Transistor 10A 400V KSC2751 400V 10A NPN transistor
Contextual Info: KSC2751 NPN EPITAXIAL SILICON TRANSISTOR HIGH SPEED, HIGH CURRENT SWITCHING INDUSTRIAL USE ABSOLUTE MAXIMUM RATINGS Characteristic Rating Unit Collector- Base Voltage VcBO 500 V Collector- Emitter Voltage VcEO 4 00 V Emitter- Base Voltage V ebo 7 V 15 A Symbol