CYCLES50 Search Results

transistor C982

Abstract: T460-8525 ch7f IC 7824 c982 transistor C982 T108-8001 al 232 nec SF.C 2806 MA 7824
Contextual Info: Compound Transistor BA1 L4Z & m O / ' M T X f f i è f i l U v ' i t . 4.0 ±0.2 B R i = 47 kQ S' O- W V Ri 6* O BN 1L4Z £ n > 7 "U / > ^ >J T lÜ fflT 'ë i t . * Ê * te * Æ fê ( T A =25 °C) un 1 iff n ^ a v x 9 ; ^ n 3 VcEO 50 V 5 V 100 mA 200 mA

FZ 300 R 06 KL

Abstract: 2SC2901 PA33 W155
Contextual Info: NEC j ix r x Silicon T ra n sisto r A 2SC2901 N P N X h ° 9 * ' > 7 J U M V □ ' > > b = 7 9 jim m NPN Silicon Epitaxial Transistor High Speed Switching Industrial Use nm U n it: mm O x -i ¿ ‘' i S t 'o -y - f - > t o ff: 12 n s 3 ^ t On-8.0 n s 3 ; t e M

100-16L

Abstract: transistor smd TU 3
Contextual Info: 1.25A High Efficiency Switching Regulator D e sc r ip tio n The CS3972 is a 1.25A, 60V, current m ode, high efficiency, sw itching regulator circuit. It can be config­ u red in buck, boost, forw ard, iso­ lated a n d non-isolated topologies, using a single-ended switch.

Contextual Info: NEC ? t Compound Transistor / \ T 7 *$ BN1F4N it o ^ M T x f f iiÆ è ^ I/ lL T v ^ l'o Ri = 22 k£2, R2= 47 kQ ¥ o BA1F4N t 3 > 7° U / > 9 >J T 'ë É ( T a = 25 °C ) II H& s 3 1/^^- • < - x F IIE n i/ 9 9 X $ '7 9 -60 V V CEO -50 V V ebo -10 V IC(DC)

lO552

Abstract: 1T108 T460 0766125 2AV9
Contextual Info: NEC I ï f / \ f C o m p o u n d T ra n sisto r 7 CE1A3Q î& Î/ t r t S U M CE1A3Q ' i t — K, 1 L t n u ? ? 3 w ÿ 9 • ^ $ -y 9 F^ ic y > # F '7 ^ i £ I T * e n m m t - Ÿ ' Z f t M L f z , • -<— H igh h FE Î Ê t / i l ^ Ü F 7 > y ' X ^ T",

ic 7824

Abstract: 7824 BT T460-8525
Contextual Info: -T — S • S /— h Com pound Transistor BN1L4L S # lF *3M P N P J i b ° ^ i s - D V M i s ' □ > & ft o '< 4 fa m i t 2.0 +0.2 R i = 47 kQ, R 2= 22 kQ) o B A 1 L 4 L £ n > Y>J / > ? 'J t f f f l t è HO *& Ì*Ìi*5È tè (Ta = 25 °C) 9.9 • B& fé

PA33

Abstract: T108 T460 sk 0422 MTL 188
Contextual Info: 5 7 -J — . C o m p o u n d T ran sisto r A N 1L 3Z Si/tF*3 It P N P a ; tZ 9 1 r'> T J is M '> ‘J = i> # a R i = 4 . 7 kQ B o — v w R, ÓE o A A 1 L 3 Z t 3 > 7 ° ij / > ? U T l f f f l T" § £ 1 “ « ( T a - 2 5 °C) II fflg- @ aE fé- # t£

ail4m

Abstract: FIM1L4M 1h0565 M31 marking transistor TRANSISTOR IFW la 5531 FN1L4M
Contextual Info: ± I /7N I ih Compound Transistor F N 1 L4 M i&ijtrtMPNPxfc 4# .' mm it o ^ r x L ^ ^ L T v ^ - r . 2 . 8 + 0.2 R i = 47 k£2, R 2= 47 kQ) o F A 1 L 4 M t 3 y y >J 9 y ? ') (T a = H £ to 2 5 °C ) B& g ^r 5e #r # z V CBO -6 0 V =i W 9 9 • J- = -y 9m 'M l±

Contextual Info: — h y < r7 — Silicon P o w e r T ra n s is to rs 2SD1 583/1 583-Z m > ' =1 > h = 7 > i > * 9 N P N 2SD1583Ü X — 4 hfe h 7 > > * 9 T = i u 9 4 v'ffl t L t t a t - t . $ t z ' ' 4 r ' J V K IC ffl t U <, i&%WM.&T<7> U U - , - KV * - i ') ÿ y 7 " ^ <7) K 7

Contextual Info: KSB1116/1116A PN P EPITAXIAL SILICON TRANSISTOR AUDIO FREQUENCY POWER AMPLIFIER MEDIUM SPEED SWITCHING T O -8 2 • Complement to KSD1616/1616A ABSOLUTE MAXIMUM RATINGS T.=25°C Characteristic Collector-Base Voltage Symbol K S B 1 116 K S B 1 116A KS B 1116

Tc-6174

Abstract: m0328 PA33 T460 3111R sis 5511
Contextual Info: -y ^ . Z ;— C o m p o u n d T ra n sisto r A N 1 F4 Z it ^ - f i • mm & (R i = 22 kQ) o A A 1 F 4 Z ¿; 3 > 7° U / > 9 'J T'fëffl T" è t t» !6 * f* * Æ Îfr ( T a = 2 5 8C ) Il Bg. s fê *E ÎÎL # VcBO -60 V =J 1/ 9 ÿ . jL i -/ ^ f a l U E VcEO

tf 044

Abstract: 2SK490 JE 33 HT - 0886 b0236 HT 0886
Contextual Info: HEC j M O S Field Effect P ow er Transistor _ 2SK490 N - ^ * ; i ^ N 0r7 - M O S FET i i f f l N-Channel M OS Field Effect Power Transistor Switching Industrial Use 2SK490ii, N f - M O S FET W B 0 / P A C K A G E D IM EN SION S Unit: mm < , 4 X -y - f - >