2SD1006 Search Results

nec 2501

Abstract: Marking mk SOT89 SOT89 transistor marking MK 2SD1006 2SD1007 IEI-1213 MEI-1202 MF-1134 2SD1006-HM
Contextual Info: DATA SHEET SILICON TRANSISTORS 2 S D 1 6 , S 2 D 1 7 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SD1006 and 2SD1007 are designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits. FEATURES • World Standard Miniature Package

B806

Contextual Info: DATA SHEET NEC / SILICON TRANSISTORS 2SD1006,2SD1007 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S D 1006 and 2SD1007 are designed fo r audio frequency pow er a m p lifie r a pp lica tion, especially in H y b rid Integrated Circuits.

TRANSISTOR HK SMD

Abstract: smd ic marking HL smd marking HK transistors marking HK HL 100 Transistor HL 06 ic 2SD1006
Contextual Info: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SD1006 Features High collector to emitter voltage: VCEO 100V. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage

2sd1007

Contextual Info: NEC S IL IC O N T R A N S IS T O R S ELECTRON DEVICE 2SD1006,2SD1007 NPN SILICON EPITAXIAL TRA N SISTO RS POWER MINI MOLD DESCRIPTIO N The 2SD1006 and 2SD 1007 are designed fo r audio frequency power a m p lifie r application, especially in H ybrid Integrated

K1981

Abstract: 2SD100 2SD1006 1007
Contextual Info: データ・シート シリコン・トランジスタ Silicon Transistor 2SD1006, 1007 NPN エピタキシアル形シリコン・トランジスタ 低周波増幅用 本資料の内容は，予告なく変更することがありますので，最新のものであることをご確認の上ご使用ください。

2sd1006-hk

Abstract: 2SD1007 2SB806 2SD1006 sot89 transistor JB 9e sot-89 2SD1007-HP SK FN 521
Contextual Info: NEC '> > ; = ! > h =7 > i> 7 . 9 S ilic o n T ra n s is to r 2SD1006,1007 o ^ -fv 7 4 ' < / r ^ 7 \ v ° -7 ^ iz y 2 S B 8 0 6 t = ¡ > 7 ° ' 9 > 9 U 0 O 2SB805, 1.5 + 0.1 * Ê # Ît* Æ :fê T a = 25 °C) 2SD1006 2SD1007 # »§• -t til m i 3 v- 9 9 ■

Contextual Info: Transistors IC SMD Type Product specification 2SD1006 Features High collector to emitter voltage: VCEO 100V. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage

2SD1006

Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD1006, 1007 NPN SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD The information in this document is subject to change without notice. Before using this document, please confirm that this is the latest version. Not all products and/or types are available in every country. Please check with an NEC Electronics

2sa1154

Abstract: 2SC2719 2sc2720 2SC1280 2SA1152 2SA1151 2SA603 2SD1297 2SC943 NTC2335
Contextual Info: N E C ELECTRONICS INC C Transistors ET b4S7SES OOOblDl 1 STC iààau M i T -33- 0 / •Wim - W - I J .4 I U Ü Í I J W 3 B ! U W M P H 1 »VJW» '»J-M* 1 ■JM ■ r t n ïi « t i n t o • Darlington Power Transistors '^ U c VceoM (DC |A1 \ Package \

2SD1028

Abstract: 2SD1031 2SD1036 2SD1094 2SD1087 2SD1013 2SD1019 2sd1037 equivalent 2SD1028 2SD1004
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SD1001 80 5 300 2W 150 200 1 50 140* 7 2SB800 2SD1002 45 5 1A

2SC2719

Abstract: 2sc2720 NTC2335 2SC1280A 2SA603 28c128 2SA1154 NTB601 NTC27 NTB795
Contextual Info: N E C ELECTRONICS INC STC C Transistors ET *fS*B U .Jjl.W bMSTSES DOOblOl 1 D atom [v j w -I»W1 -i»'. I.U I •JU iM à ta iiita iib É ttâ d K i • D arlington Pow er Transistors '"~'''S=-Jc DC [A] Vceom \ Package \ 60 TO-126 80 TO-126 3.0 2.0 1.5

micro servo 9g

Abstract: uPa2003 micro servo 9g tower pro 2SK1060 uPD3599 201 Zener diode 2SK2396 upc1237 infrared sensor TSOP - 1836 2SK518
Contextual Info: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call

2sk2500

Abstract: UPC1037HA UPC648C 2SK927 NEC 2SK2500 uPD5201G UPA64HA UPD6360C 2SH24 n13t1
Contextual Info: お客様各位 カタログ等資料中の旧社名の扱いについて 2010 年 4 月 1 日を以って NEC エレクトロニクス株式会社及び株式会社ルネサステクノロジ が合併し両社の全ての事業が当社に承継されております。従いまして、本資料中には旧社

pa1476h

Abstract: pa80c PA1501H pa1437h PA1478H PA1556A pa1428ah PA2981 PA571T PA1556AH
Contextual Info: CD-ROM版トランジスタ CD-ROM X13769XJ2V0CD00 08−1 トランジスタ パッケージ別早見表 • TO-92形トランジスタ V TO–92 CEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674

2SA1444 equivalent

Abstract: BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent
Contextual Info: CD-ROM Transistor CD-ROM X13769XJ2V0CD00 08-1 Transistor Quick Reference by Package TO–92 • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 2SA1206∗∗ 2SA988 2SA992

lg crt monitor circuit diagram

Abstract: micro servo 9g samsung lcd tv power supply diagrams MP 1008 es uPa2003 8049 microcontroller APPLICATION LG lcd tv tuner pioneer car dvd service manual lg washing machine circuit diagram 8ch pnp DARLINGTON TRANSISTOR ARRAY
Contextual Info: SEMICONDUCTORS SELECTION GUIDE Microcomputer 1 IC Memory 2 Semi-Custom IC 3 Particular Purpose 4 General Purpose Linear IC 5 Transistor/Diode/Thyristor 6 GaAs Device/ Silicon Microwave Semiconductor 7 Optical Device 8 Packages 9 Index 10 October 1998 The export of these products from Japan is regulated by the Japanese government. The export of some or all of

2SK2500

Abstract: 2SK1543 UPD16861GS NEC 2SK2500 upa1559h transistor NEC 2SK2500 2sc4496a mc10087f1 2SA733A UPD16861
Contextual Info: NEC Electronics Corporation Product Information for China RoHS Semiconductor Devices 1/708 Feb. 24, 2010 NEC Electronics discloses information on contained substances subject to regulation of its semiconductor devices, evaluation boards, and development tools. NEC Electronics understands that customers are required to disclose

2sk520

Abstract: 3sk131 cross 2S880 TRANSISTOR AF 416 pnp 2SK738 2SK739 3SK133A 2sc3554 transistor pnp 3906 2SK508
Contextual Info: TY P E NO. CROSS IN D E X TYPE No. A PPLIC ATIO N & STRUCTURE PACKAGE PAGE 1S2835 ANODE COMMON SWITCHING DIO DE M IN I MOLD 83 1S2836 ANO DE COMMON SWITCHING DIODE M IN I MOLD 83 1S2837 CATHODE COMMON SW ITCHING DIODE M IN I MOLD 86 1S2838 CATHODE COMMON SWITCHING DIOOE

TXAL 228 B

Abstract: 2SAB12 K1589 2sc2554 k2499 P015M 2SD 1694 2482S K2134 diode zener nt 1243
Contextual Info: QUICK REFERENCE GUIDE 2 ELECTRICAL SPECIFICATION LIST 2 PIN ULTRA SUPER MINI MOLD • Noise Clipping Diode fMNCD[ JC Series) M axim am R atings5 Electrical Characteristics {T a = 2 5 ‘CJ O a = 2 5 ‘C ì Type No. Application V b r (V) P tm W ) M IN . S M A X

triac tic 236

Abstract: SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC
Contextual Info: TYPE NO. CROSS INDEX T Y P E NO. APPLICATION 8i STRU C TU RE PAGE ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2836 ANODE COMMON SW ITCHING DIODE MINI MOLD 83 1S2837 CATHODE COMMON SW ITCHING DIODE MINI MOLD 86 1S2838 CATHODE COMMON SW ITCHING DIODE MINI MOLD

2S880

Abstract: 2S8805 baw 92 2SB805
Contextual Info: SILICON TRA N SISTO R S 2SB805,2SB806 PNP SILICON EPITAXIAL TRANSISTOR POWER MINI MOLD DESCRIPTION T he 2SB805 and 2SB806 are designed f o r audio freq uency pow er a m p lifie r app lication, especially in H y b rid Integrated Circuits. FEA TU RES • W orld Standard M in ia tu re Package :

MICROPROCESSOR Z80

Abstract: uPD72020 uPC5102 transistor 2p4m UPD6487 2SD1557 2SJ 3305 UPD77529 TRANSISTOR SOD MARKING CODE 352A micro servo 9g tower pro
Contextual Info: The export of these products from Japan is regulated by the Japanese government. The export of some or all of these products may be prohibited without governmental license. To export or re-export some or all of these products from a country other than Japan may also be prohibited without a license from that country. Please call

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

NEC 10F triac

Abstract: 10F triac NEC scr 5P4M 2P4M PIN DIAGRAM thyristor battery charger 2p4m 3S4M SCR Ringing Choke Converter equivalent scr 2p4m 3s4m thyristor 2SK1272
Contextual Info: SEMICONDUCTOR DEVICES FOR POWER SUPPLY SELECTION GUIDE • Thyristor • Power MOSFET • Small-Signal MOSFET • Power Supply IC • Operational Amplifier • Comparator • Three-Terminal Regulator • Photocoupler • Zener Diode 13th Edition CONTENTS 1. POWER SUPPLY BLOCK DIAGRAM . 2