PA1710 Search Results
PA1710 Datasheets (1)
| Part | ECAD Model | Manufacturer | Description | Datasheet Type | PDF Size | Page count | |
|---|---|---|---|---|---|---|---|
| PA1710 | NEC | MOS Field Effect Power Transistors | Original | 81.32KB | 8 |
PA1710 Datasheets Context Search
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Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1710A SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of notebook computers. PACKAGE DRAWING Unit : mm |
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pa1710apa1710ag | |
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Contextual Info: DATA SHEET MOS FIELD EFFECT TRANSISTOR µ PA1710A SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel MOS Field Effect Transistor designed for DC/DC converter and power management applications of notebook computers. PACKAGE DRAWING Unit : mm |
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pa1710apa1710ag | |
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Contextual Info: DATA SH EE T MOS FIELD EFFECT TRANSISTOR _ ß PA1710A SWITCHING P-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION This product is P-Channel M O S Field Effect Transistor designed for D C /D C converter and power m anagem ent applications of notebook computers. |
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pa1710apa1710ag | |
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Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid |
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Contextual Info: THIS C D R A WI N G IS RELEASED UNPUBLISHED. C O P Y R I G H T 19 9 9 2 7 8 BY TYCO ELECTRONICS CORPORATION. F OR ALL PUBLICATION RIGHTS 19 99 LOC REV IS I O N S D I ST AD 0 0 RESERVED. LTR 09FEB0I REV P E R O G 3 C - 044 I -00 9 54 [ 00 ] DWN DATE DE S C R I P T I O N |
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apr99a17105-3608mar200 | |
pa1476h
Abstract: pa80c PA1501H pa1437h PA1478H PA1556A pa1428ah PA2981 PA571T PA1556AH
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x13769xj2v0cd002sa12062sc16742sa988+16 | |
103-6527
Abstract: 103650-7
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d01fi103651-rplated103-6527103650-7 | |
TXAL 228 B
Abstract: 2SAB12 K1589 2sc2554 k2499 P015M 2SD 1694 2482S K2134 diode zener nt 1243
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/pa17q2pa1710txal 228 b2sab12+8 | |
triac tic 236
Abstract: SCR U 537 MP25 transistor transistor su 312 GA1L32 3 pin mini mold transistor 2SJ19 FA114M 2SA1611 Z 103 TRIAC
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1s28351s28361s28371s2838+16 | |
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Contextual Info: DATA SHEET MOS Field Effect Power Transistors AiPA1 710 SWITCHING P-CHANNEL POWER MOS FFT INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This product is P-Channei MOS Field Effect Transistor in millimeter designed for DC/DC converter and power management |
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980pf | |
PC1310Contextual Info: TMP82C265BF-2 1/3 IL00 * C-MOS PROGRAMMABLE PERIPHERAL INTERFACE 40 39 38 37 36 35 34 33 32 31 30 29 28 27 26 25 GND GND 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 17 18 19 20 21 22 23 24 65 66 67 68 69 70 71 72 73 74 75 76 77 78 79 80 VCC (+5V) 64 63 |
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tmp82c265bf-2pc0-pc17pc13-10pb17-10+6 | |
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Contextual Info: DATA SHEET NEC MOS Field Effect Power Transistors fiPMHO SWITCHING P-CHANNEL POWER MOS FFT INDUSTRIAL USE DESCRIPTION PACKAGE DIMENSIONS This p roduct is P -C h annel M O S Field Effect Transistor in m ilfim eter} designed for DC /D C conve rter and pow er m anagem ent |
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980pf | |
822275-1Contextual Info: Iloc ie.»t j AG ] 5 3 l 8 A\ H O U S IN G M A T E R IA L S H ALL BE P O LY P H E N Y L E N E /$ \ C ONTACT M A T E R IA L SH ALL BE PHOS. & C ONTACT F IN IS H , PLATE 0 ,0 0 5 0 8 IN D IC A T E S P .'N *1 AND 15 C. 0 0 C 2 0 0 ) LO C A T E D AP P R O X . |
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hevis10hs822275-1 | |
transistor d 1710
Abstract: A1710
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upa1710980pftransistor d 1710a1710 | |
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Contextual Info: Data Sheet 124062 AMP PCMCIA Flash-5C Memory Card AUG 94 REVO Product Features • ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ ■ PCMCIA Release 2.1 Compatible Thin Profile — Type I Package, 3.3 mm Thick Standard Memory Capacities include 1 MB, 2 MB, 4 MB, and 8 MB |
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