2SD246 Search Results

2SD246 Datasheets (59)

Part	Manufacturer	Description	Datasheet Type	PDF	PDF Size	Page count
2SD246	Fuji-SVEA	Japanese 2S Transistor Cross Reference Datasheet	Scan	PDF	46.49KB	1
2SD246	Motorola	Motorola Semiconductor Data & Cross Reference Book	Scan	PDF	42.6KB	1
2SD246	Unknown	Transistor Shortform Datasheet & Cross References	Scan	PDF	80.21KB	1
2SD246	Unknown	Shortform Transistor PDF Datasheet	Short Form	PDF	159.72KB	1
2SD246	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF	33.63KB	1
2SD246	Unknown	Cross Reference Datasheet	Scan	PDF	38.3KB	1
2SD246	Unknown	Semiconductor Master Cross Reference Guide	Scan	PDF	113.29KB	1
2SD246	Unknown	Shortform Transistor Datasheet Guide	Short Form	PDF	87.66KB	1
2SD246	Unknown	Transistor Substitution Data Book 1993	Scan	PDF	42.36KB	1
2SD246	Unknown	The Japanese Transistor Manual 1981	Scan	PDF	102.54KB	2
2SD246	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	38.83KB	1
2SD2460	Panasonic	Silicon NPN epitaxial planer type	Original	PDF	33.69KB	2
2SD2460	Panasonic	NPN Transistor	Original	PDF	43.92KB	3
2SD2460	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF	36KB	1

2SD2461	Toshiba	NPN Transistor	Original	PDF	185.79KB	5
2SD2461	Unknown	Japanese Transistor Cross References (2S)	Scan	PDF	38.17KB	1
2SD2461	Unknown	Shortform Data and Cross References (Misc Datasheets)	Short Form	PDF	41.17KB	1
2SD2461	Toshiba	Silicon NPN transistor for power amplifier applications	Scan	PDF	210.73KB	4
2SD2461	Toshiba	TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE	Scan	PDF	210.07KB	4
2SD2462	Toshiba	NPN Transistor	Original	PDF	186.48KB	5

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Toshiba America Electronic Components 2SD2462 Power Bipolar Transistor, 3A I(C), 60V V(BR)CEO, 1-Element, NPN, Silicon, Plastic/Epoxy, 3 Pin
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Chip Stock	2SD2462		53,184			1 - 10 - 100 - 1000 - 10000 -	Get Quote
Samtec Inc TW-09-02-S-D-246-SM-A
Distributors	Part	Package	Stock	Lead Time	Min Order Qty	Price	Buy
Master Electronics	TW-09-02-S-D-246-SM-A					1 - 10 $6.58 100 $5.10 1000 $3.23 10000 $2.39	Buy Now

2SD246 Datasheets Context Search

Catalog Datasheet	Type	Document Tags	PDF
Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE 2SD2462 U nit in mm POWER AM PLIFIER APPLICATIONS • • High DC Current Gain : hpE = 800~3200 V qe = 5V, Ic = 0.2A Low Collector Saturation Voltage : v CE(sat) = °-4V (Typ.)(Ic = lA, Iß = 10mA) M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	2SD2462	PDF
2SB1607 Abstract: 2SD2469 Contextual Info: Inchange Semiconductor Product Specification 2SB1607 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Large collector current IC ・Low collector saturation voltage. ・Complement to type 2SD2469 APPLICATIONS ・For power switching applications	Original	2SB1607 O-220F 2SD2469 O-220F) 10MHz 2SB1607 2SD2469	PDF
D2461 Abstract: 2SD2461 Contextual Info: 2SD2461 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2461 Power Amplifier Applications Unit: mm • High DC current gain: hFE 1 = 800 to 3200 (VCE = 5 V, IC = 0.1 A) • Low saturation voltage: VCE (sat) = 0.3 V (typ.) (IC = 0.5 A, IB = 5 mA) Absolute Maximum Ratings (Ta = 25°C)	Original	2SD2461 D2461 2SD2461	PDF
D2462 Abstract: 2SB1602 2SD2462 Contextual Info: 2SD2462 東芝トランジスタシリコンNPN三重拡散形 2SD2462 ○ 低周波電力増幅用 • • 単位: mm 直流電流増幅率が高い。: hFE 1 = 800~3200 (VCE = 5 V, IC = 0.2 A) 飽和電圧が低い。 : VCE (sat) = 0.4 V (標準) (IC = 1 A, IB = 10 mA)	Original	2SD2462 2SB1602 20070701-JA D2462 2SB1602 2SD2462	PDF
Contextual Info: TO SHIBA 2SD2462 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2462 PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain ; hpg i = 800~3200 Low Collector Saturation Voltage : VCE(sat) = °-4V (Typ.) Complementary to 2SB1602 • • M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	2SD2462 2SB1602	PDF
Contextual Info: Power Transistors 2SD2467 Silicon NPN epitaxial planar type For power switching Unit: mm 4.6±0.2 M Di ain sc te on na tin nc ue e/ d • Features TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 130 V Collector to emitter voltage VCEO	Original	2SD2467	PDF
2SD2461 Contextual Info: 2SD2461 TO SH IBA TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS • • SILICON NPN TRIPLE DIFFUSED TYPE 2SD2461 Unit in mm High DC Current Gain : hpE l = 800~3200 Low Collector Saturation Voltage : V q e ( s a t ) “ 0.3V (Typ.) MAXIMUM RATINGS (Ta = 25°C)	OCR Scan	2SD2461 2SD2461	PDF
2SB1602 Abstract: 2SD2462 Contextual Info: TO SH IBA 2SD2462 TOSHIBA TRANSISTOR POWER AMPLIFIER APPLICATIONS. • • • SILICON NPN TRIPLE DIFFUSED TYPE 2SD2462 Unit in mm 8.0 ± 0.2 High DC Current Gain : ^FE l = 800~3200 Low Collector Saturation Voltage : v CE(sat) = °-4V (TyP-) Complementary to 2SB1602	OCR Scan	2SD2462 2SB1602 2SD2462	PDF
Contextual Info: 2SD2461 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2461 Power Amplifier Applications Unit: mm • High DC current gain: hFE 1 = 800 to 3200 (VCE = 5 V, IC = 0.1 A) • Low saturation voltage: VCE (sat) = 0.3 V (typ.) (IC = 0.5 A, IB = 5 mA) Absolute Maximum Ratings (Ta = 25°C)	Original	2SD2461	PDF
220E Abstract: 2SB1607 2SD2469 Contextual Info: Power Transistors 2SB1607 Silicon PNP epitaxial planar type For power switching Complementary to 2SD2469 Unit: mm 4.6±0.2 • Absolute Maximum Ratings TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –130 V Collector to emitter voltage	Original	2SB1607 2SD2469 220E 2SB1607 2SD2469	PDF
2SD2461 Abstract: D2461 transistor d2461 Contextual Info: 2SD2461 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2461 Power Amplifier Applications Unit: mm • High DC current gain: hFE 1 = 800 to 3200 (VCE = 5 V, IC = 0.1 A) · Low saturation voltage: VCE (sat) = 0.3 V (typ.) (IC = 0.5 A, IB = 5 mA) Maximum Ratings (Ta = 25°C)	Original	2SD2461 2SD2461 D2461 transistor d2461	PDF
D2462 Abstract: 2SB1602 2SD2462 Contextual Info: 2SD2462 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2462 Power Amplifier Applications • Unit: mm High DC current gain: hFE 1 = 800 to 3200 (VCE = 5 V, IC = 0.2 A) · Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 1 A, IB = 10 mA) · Complementary to 2SB1602	Original	2SD2462 2SB1602 D2462 2SB1602 2SD2462	PDF
D2461 Abstract: 2SD2461 Contextual Info: 2SD2461 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2461 Power Amplifier Applications Unit: mm • High DC current gain: hFE 1 = 800 to 3200 (VCE = 5 V, IC = 0.1 A) • Low saturation voltage: VCE (sat) = 0.3 V (typ.) (IC = 0.5 A, IB = 5 mA) Maximum Ratings (Ta = 25°C)	Original	2SD2461 D2461 2SD2461	PDF
2SB1602 Abstract: 2SD2462 Contextual Info: TOSHIBA 2SD2462 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2SD2462 PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain : ^FE 1 = 800~3200 Low Collector Saturation Voltage : v CE(sat) = °-4V (Typ.) Complementary to 2SB1602 • • M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	2SD2462 2SB1602 2SD2462	PDF

d2462 Contextual Info: TOSHIBA 2SD2462 TOSHIBA TRANSISTOR SILICON NPN TRIPLE DIFFUSED TYPE 2S D 24 62 Unit in mm PO W ER AM PLIFIER APPLICATIONS. • High DC Current Gain : hpE 1 —800^3200 Low Collector Saturation Voltage : VCE (sat) = °-4V (TyP*) Complementary to 2SB1602 •	OCR Scan	2SD2462 2SB1602 d2462	PDF
TRANSISTOR K 314 Abstract: NEC semiconductor Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD2463 NPN SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SD2463 is a Darlington connection transistor with on- PACKAGE DRAWING UNIT: mm chip dumper diode in collector to emitter and zener diode in	Original	2SD2463 2SD2463 C11531E) TRANSISTOR K 314 NEC semiconductor	PDF
d2462 Abstract: 2SD2462 2SB1602 Contextual Info: 2SD2462 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2462 Power Amplifier Applications • Unit: mm High DC current gain: hFE 1 = 800 to 3200 (VCE = 5 V, IC = 0.2 A) • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 1 A, IB = 10 mA) •	Original	2SD2462 2SB1602 d2462 2SD2462 2SB1602	PDF
Contextual Info: TO SHIBA 2SB1602 TO SHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 602 POWER AMPLIFIER APPLICATIONS • High DC Current Gain ; hjrg i = 300~ 1000 Low Collector Saturation Voltage : v CE(sat)= -0.5V (Typ.) Complementary to 2SD2462 • • M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	2SB1602 2SD2462	PDF
D2462 Abstract: 2SD2462 2SB1602 Contextual Info: 2SD2462 TOSHIBA Transistor Silicon NPN Triple Diffused Type 2SD2462 Power Amplifier Applications Unit: mm • High DC current gain: hFE 1 = 800 to 3200 (VCE = 5 V, IC = 0.2 A) • Low saturation voltage: VCE (sat) = 0.4 V (typ.) (IC = 1 A, IB = 10 mA) •	Original	2SD2462 2SB1602 D2462 2SD2462 2SB1602	PDF
Contextual Info: Transistor 2SD2460 Silicon NPN epitaxial planer type For low-frequency output amplification Unit: mm 3.0±0.2 4.0±0.2 M Di ain sc te on na tin nc ue e/ d • Features marking Ta=25˚C ea s ht e v tp is :// it pa fo na llo so win ni g c. U co R .jp L a /s bo	Original	2SD2460	PDF
Contextual Info: Power Transistors 2SD2468 Silicon NPN epitaxial planar type For power switching Unit: mm 4.6±0.2 M Di ain sc te on na tin nc ue e/ d • Features TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO 130 V Collector to emitter voltage VCEO	Original	2SD2468	PDF
Contextual Info: Power Transistors 2SB1607 Silicon PNP epitaxial planar type For power switching Complementary to 2SD2469 Unit: mm 4.6±0.2 M Di ain sc te on na tin nc ue e/ d • Features TC=25˚C Parameter Symbol Ratings Unit Collector to base voltage VCBO –130 V Collector to emitter voltage	Original	2SB1607 2SD2469	PDF
2SB1602 Abstract: 2SD2462 Contextual Info: TOSHIBA 2SB1602 TO SHIBA TRANSISTOR SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 602 POWER AMPLIFIER APPLICATIONS • High DC Current Gain : ^FE 1 = 300~1000 Low Collector Saturation Voltage : VCE (sat)“ —0.5y (Typ.) Complementary to 2SD2462 • • M A X IM U M RATINGS (Ta = 25°C)	OCR Scan	2SB1602 2SD2462 100ms 2SB1602	PDF
Contextual Info: TOSHIBA 2SB1602 TOSHIBA TRANSISTOR PO W ER AM PLIFIER APPLICATIONS • SILICON PNP TRIPLE DIFFUSED TYPE 2 S B 1 6 Q2 High DC Current Gain : ^FE 1 = 300—1000 Low Collector Saturation Voltage • VCE (sat)= —0-5V (Typ.) Complementary to 2SD2462 • •	OCR Scan	2SB1602 2SD2462	PDF

2SD246 Search Results

2SD246 Datasheets (59)

2SD246 Price and Stock

Toshiba America Electronic Components 2SD2462

Samtec Inc TW-09-02-S-D-246-SM-A

2SD246 Datasheets Context Search

2SB1607

D2461

D2462

2SD2461

2SB1602

220E

2SD2461

D2462

D2461

2SB1602

d2462

TRANSISTOR K 314

d2462

D2462

2SB1602