2SD22 Search Results

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE HIGH 2SD2204 POWER SWITCHING APPLICATIONS. HAMMER DRIVE, U nit in m m PULSE MOTOR DRIVE A P P L I C A T I O N S . 10±03 . H i g h DC C u r r e n t Gain: h F E = 2000 Min. (aC \'c e = 3V, . Low Saturation Voltage : V c E ( s a t ) = l •5 V ( H a x . ) (at Ic=1.5A)

2SB1455

Abstract: 2SD2203
Contextual Info: Inchange Semiconductor Product Specification 2SB1455 Silicon PNP Power Transistors DESCRIPTION ・With TO-220F package ・Complement to type 2SD2203 ・Low collector saturation voltage: ・Large current capacity APPLICATIONS ・High current power switching applications

D2200

Contextual Info: Ordering number : EN 3 1 5 1 □ 2SB1451/2SD2200 N o . 3151 SA \Y O PNP/NPN Epitaxial Planar Silicon Transistors High-Current Switching Applications F e a tu re s - Surface mount type device making the following possible -Reduction in the number of m anufacturing processes for 2SB1451/2SD2200-applied equipment

TV horizontal Deflection Systems

Abstract: 3320L N933 2SD2252
Contextual Info: Ordering number: EN 3 320 _ 2SD2252 N P N Triple Diffused Plan ar Silicon Transistor Color TV Horizontal Deflection Outout Applications A p p lic a tio n s •Color T V horizontal deflection output •Color Display horizontal deflection output

transistor smd marking BJ

Abstract: smd transistor bj smd marking BJ 2SD2226K
Contextual Info: Transistors IC SMD Type General Purpose Transistor 2SD2226K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High emitter-base voltage. 1 Low saturation voltage. 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 High DC current gain. 0.4 3 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1

2SB1508

Abstract: 2SD2281 2sd228 2sb15
Contextual Info: Inchange Semiconductor Product Specification 2SB1508 Silicon PNP Power Transistors DESCRIPTION ・With TO-3PML package ・Low collector saturation voltage ・Complement to type 2SD2281 ・Wide area of safe operation APPLICATIONS ・For use in relay drivers ,high-speed

D2204

Abstract: 2SD2204
Contextual Info: 2SD2204 東芝トランジスタ シリコンNPN三重拡散形 2SD2204 ○ 大電力スイッチング用 ○ ハンマドライブパルスモータドライブ用 単位: mm • 直流電流増幅率が高い。 : hFE = 2000 最小 (VCE = 3 V, IC = 1.5 A)

Contextual Info: Transistors IC SMD Type Product specification 2SD2201 TO-263 1 .2 7 -0+ 0.1.1 Features Surface mount type device making the following possible. Unit: mm +0.1 1.27-0.1 +0.2 4.57-0.2 Low collector-to-emitter saturation voltage. 5 .2 8 -0+ 0.2.2 +0.1 0.81-0.1

Contextual Info: Transistors IC SMD Type Product specification 2SD2226K SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 High emitter-base voltage. 1 0.55 +0.1 1.3-0.1 +0.1 2.4-0.1 High DC current gain. 0.4 3 Features 2 Low saturation voltage. +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1

D2257

Abstract: 2SB1495 2SD2257
Contextual Info: 2SD2257 TOSHIBA Transistor Silicon NPN Epitaxial Type 2SD2257 High-Power Switching Applications Hammer Drive, Pulse Motor Drive Applications • High DC current gain: hFE = 2000 min • Low saturation voltage: VCE (sat) = 1.5 V (max) • Complementary to 2SB1495

Contextual Info: Transistors IC SMD Type Product specification 2SD2230 SOT-23 Unit: mm +0.1 2.9-0.1 +0.1 0.4-0.1 0.4 3 Low VCE sat . 1 0.55 High hFE and high current. +0.1 1.3-0.1 +0.1 2.4-0.1 Features 2 +0.1 0.95-0.1 +0.1 1.9-0.1 0-0.1 +0.1 0.38-0.1 +0.1 0.97-0.1 +0.05 0.1-0.01

2SD2259

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2259 Silicon NPN epitaxial planar type For low-frequency amplification Unit: mm 2.5±0.1 (0.8) (1.0) (0.2) 4.5±0.1 0.7 Th an W is k y Th e a pro ou Fo an po du fo r f k y log ct r b

EN3152

Abstract: 3152 2069B 2SB1452
Contextual Info: Ordering number:EN3152 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1452/2SD2201 80V/7A Switching Applications Features Package Dimensions • Surface mount type device making the following possible. -Reduction in the number of manufacturing processes for 2SB1452/2SD2201-applied equipment.

EN3716

Abstract: 2SB1511
Contextual Info: Ordering number:EN3716 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1511/2SD2285 30V/20A High-Current Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters. unit:mm 2039A Features [2SB1511/2SD2285] · Low collector-to-emitter saturation voltage :

TO-92MOD

Abstract: 2SD2213
Contextual Info: 2SD2213 Silicon NPN Epitaxial Low Frequency Power Amplifier Features TO-92MOD • Large hFE at low current operation. 2000, at IC = 0.15A Table 1 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Rating Unit ——————————————————————–

2SB1495

Abstract: 2SD2257
Contextual Info: SavantIC Semiconductor Product Specification 2SB1495 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SD2257 ·High DC current gain. ·Low saturation voltage. ·DARLINGTON APPLICATIONS ·High power switching applications

2SB1503

Abstract: 2SD2276
Contextual Info: SavantIC Semiconductor Product Specification 2SB1503 Silicon PNP Power Transistors DESCRIPTION •With TO-3PL package ·Complement to type 2SD2276 ·High DC current gain ·Low collector saturation voltage ·DARLINGTON APPLICATIONS ·For power amplification

2SB1508

Abstract: 2SD2281
Contextual Info: SavantIC Semiconductor Product Specification 2SB1508 Silicon PNP Power Transistors DESCRIPTION •With TO-3PML package ·Low collector saturation voltage ·Complement to type 2SD2281 ·Wide area of safe operation APPLICATIONS ·For use in relay drivers ,high-speed

2SB1494

Abstract: 2SD2256 DSA003644
Contextual Info: 2SB1494 Silicon PNP Triple Diffused ADE-208-878 Z 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary Pair with 2SD2256 Outline TO-3P 2 1 1. Base 2. Collector (Flange) 3. Emitter 1 2 ID 3 3 2SB1494 Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: T O SH IB A 2SD2257 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE 2SD2257 Unit in mm HIGH POWER SWITCHING APPLICATIONS HAMMER DRIVE, PULSE MOTOR DRIVE APPLICATIONS 1 Q ± 0 -3 • • • High DC Current Gain : hjrj; = 2000 MIN. Low Saturation Voltage : V^ e (sat) = 1.5V (MAX.)

Contextual Info: 2SD2299 Silicon NPN Triple Diffused HITACHI Application CTV horizontal deflection output Features • High breakdown voltage VCB0 = 1500 V • Built-in damper diode type Outline 2SD2299 Absolute Maximum Ratings Ta = 25 °C Item Sym bol Ratings Unit Collector to em itter voltage

Contextual Info: TO SHIBA 2SD2271 TOSHIBA TRANSISTOR 2SD2271 SILICON NPN TRIPLE DIFFUSED TYPE DRALINGTON PO W ER TRANSISTOR MOTOR DRIVE APPLICATIONS Unit in mm HIGH CURRENT SWITCHING APPLICATIONS 10 ±0.3 • • High DC Current Gain : hjrj; = 500 (Min.) (V q e = 2V, Iq = 5A)

Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2216 Silicon NPN epitaxial planar type M Di ain sc te on na tin nc ue e/ d For general amplification Complementary to 2SB1462 • Package • High forward current transfer ratio hFE

2SD2206

Contextual Info: TO SH IBA 2SD2206 TOSHIBA TRANSISTOR SILICON NPN EPITAXIAL TYPE DARLINGTON 2SD2206 Unit in mm MICRO MOTOR DRIVE, HAMMER DRIVE APPLICATIONS 5.1 MAX. SWITCHING APPLICATIONS POWER AMPLIFIER APPLICATIONS • • High DC Current Gain : h^E = 2000 (Min.) (V'ce = 2V, Iq = 1A)