2SD2256 Search Results

2SB1494

Abstract: 2SD2256 DSA003644
Contextual Info: 2SB1494 Silicon PNP Triple Diffused ADE-208-878 Z 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary Pair with 2SD2256 Outline TO-3P 2 1 1. Base 2. Collector (Flange) 3. Emitter 1 2 ID 3 3 2SB1494 Absolute Maximum Ratings (Ta = 25°C)

Contextual Info: 2SB1494 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier complementary Pair with 2SD2256 Outline 2SB1494 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit C ollector to base voltage ^C B O -1 2 0 V 20 V C ollector to em itter voltage

2SB1494

Contextual Info: 2SB1494 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier complementary Pair with 2SD2256 Outline TO-3P 1. Base 2. Collector Flange 3. Emitter 2SB1494 Absolute Maximum Ratings (Ta = 25 °C) Item Symbol Ratings Unit Collector to base voltage

PC1-120

Abstract: 2SD2256 2SB1494 low sat
Contextual Info: HITACHI 2SD2256-Silicon NPN Triple Diffused Low Frequency power Am plifier Complementary pair with 2SB1494 Feature • High breakdown voltage and High current v CEO= 120V,Ic = 25A * Built-in C -E diode Absolute Maximum Ratings (Ta = 25°C) Item

2SD2232

Abstract: 2sb1492 2SD2255 2SD2230 2SD2233 2SD2234 2SD2240 2SD2242 2SD2242A 2SD2247
Contextual Info: - 286 - W c k & fè » rl ^ f± -in S m iê V'CBO V 2SD223Q 2SD2232 2SD2233 2SD2234 2SD2240 2SD2242 2SD2242A 2SD2247 2SD2249 2SD2250 2SD2252 2SD2254 2SD2255 2SD2256 2SD2258 2SD2259 2SD2260 2SD2263 2SD2265 2SD2266 2SD2273 2SD2274 2SD2275 2SD2276 2SD2280 2SD2281

2SB1494

Abstract: 2SD2256
Contextual Info: HITACHI 2SB1494- -Silicon PNP Triple Diffused Low Frequency Power A m plifier Complementary Pair with 2SD2256 Feature * H ig h V oltage and H ig h C u rre n t V CEO = - , 2 0 V * lc = " 25 a • B u ilt- in C -E d iod e Absolute M axim um Ratings (Ta - 25°C)

Hitachi DSA001650

Abstract: 2SB1494
Contextual Info: 2SD2256 Silicon NPN Triple Diffused Application Low frequency power amplifier complementary pair with 2SB1494 Features • High breakdown voltage and high current VCEO = 120 V, IC = 25 A • Built-in C-E diode Outline TO-3P 2 1 1. Base 2. Collector (Flange)

B1494

Contextual Info: HITACHI 2SB1494 Silicon PNP Triple Diffused Low Frequency Power Amplifier Complementary Pair with 2SD2256 Feature TO-3P ♦ H igh Voltage and H igh Current <v CEO = ~ ! 2 0 V . IC = - 2 5 A • B u ilt-in C -fi diode Absolute Maximum Ratings Ta = 25°C)

2SB1494

Abstract: 2SD2256 Hitachi DSA00398
Contextual Info: 2SB1494 Silicon PNP Triple Diffused Application Low frequency power amplifier complementary Pair with 2SD2256 Outline TO-3P 2 1 1. Base 2. Collector Flange 3. Emitter 1 2 ID 3 3 2SB1494 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage

2SB1494

Abstract: 2SD2256 DSA003645
Contextual Info: 2SD2256 Silicon NPN Triple Diffused ADE-208-928 Z 1st. Edition Sep. 2000 Application Low frequency power amplifier complementary pair with 2SB1494 Features • High breakdown voltage and high current (VCEO = 120 V, I C = 25 A) • Built-in C-E diode Outline

Contextual Info: 2SB1494 Silicon PNP Triple Diffused HITACHI Application Low frequency power amplifier complementary Pair with 2SD2256 Outline 2SB1494 Absolute Maximum Ratings Ta = 25 °C Item Symbol Ratings Unit Collector to base voltage ^G B G -1 2 0 V Collector to em itter voltage

Contextual Info: 2SD2256 Silicon NPN Triple Diffused HITACHI Application Low frequency power amplifier complementary pair with 2SB1494 Features • High breakdown voltage and high current VCE0 = 120 V, Ic = 25 A • Built-in C-E diode Outline T O -3 P 2SD2256 Absolute Maximum Ratings (Ta = 25 °C)

2SB1494 2SD2256

Abstract: 2SD2256
Contextual Info: HITACHI 2SD2256 Silicon NPN Tripie Diffused Low Frequency power Amplifier Complementary pair with 2SB1494 Feature TO-3P • High breakdown voltage and High current V CE0 = 120 V, Ic = 25A * B uilt-in C -E diode Absolute Maximum Ratings (Ta = 25°C) Item

Hitachi DSA002787

Contextual Info: 2SB1494 Silicon PNP Triple Diffused Application Low frequency power amplifier complementary Pair with 2SD2256 Outline TO-3P 2 1 1. Base 2. Collector Flange 3. Emitter 1 2 ID 3 3 2SB1494 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage

7054F

Abstract: BC564A HA13563 AC123A HITACHI microcontroller H8 534 manual IC 74LS47 AC538 BC245A 2SK3235 HA13557
Contextual Info: INDEX General General Information Semiconductor Packages Sales Locations Microcontroller Microcontroller General MultiChipModules Smart Card Micro. Overview Micro. Shortform Micro. Hardware Manual Micro. Program. Manual Micro. Application Notes LCD Controller / Driver

2SB1494

Abstract: 2SD2256
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

2SC144

Abstract: 2SD466 2sc5266
Contextual Info: • t o M f i i t i ' i - i a ’f m m»mm s&<D?ay#miz w z y y - i - y p m u / ®>7 I V -E7 - 7 V U ' I / 'A w J V Z S T J - / K S 6 3 6 9 * > U - X T258-OMI # ® l|£ f tt» H # 5 5 a i TEL.5465 89 2825 FAX,5465(89)2826 ffxX * i t * «* • s •s* * *

Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

transistor 2SB618

Abstract: 3A/fllnm 80
Contextual Info: Products Search Home About Us Products Category Product News Application Message to Us Contact Us You are Here : >Home>Product Showcase > Transistor pair Products Show Diode Bridge Superfast Diode Ultrafast Diode FRD Diode STD Diode Schottky Diode Transil/TVS

2SB1494

Abstract: 2SD2256
Contextual Info: To our customers, Old Company Name in Catalogs and Other Documents On April 1st, 2010, NEC Electronics Corporation merged with Renesas Technology Corporation, and Renesas Electronics Corporation took over all the business of both companies. Therefore, although the old company name remains in this document, it is a valid

transistor 2sk

Abstract: transistor sp-10 4ac14 2SK157 transistor 2sk 70 2sj318 transistor 2sk 12 2SK2851 4AC14 TRANSISTOR 2sK 135 K 2796
Contextual Info: POWER TRANSISTOR •General switching Darlington transistor Characteristics tire 7.5 1 k - 20 k 6.0 1 k - 20 k 6.0 1 k - 20 k 8.0 1 k - 20 k 9.0 150011.5 500l_ 16.0 1 k -2 0 k 5.0 1 k -2 0 k 4.0 1 k -2 0 k 3.1 1 k -2 0 k 4.0 1 k -2 0 k 3.0 15006.0 1 k - 20 k

2SC1885

Abstract: 2Sc2565 2SD551 IL 741 2SC2565 fujitsu 736a 2sd1047 Toshiba 2sc2565 2SD427 2SD525
Contextual Info: - € m & T y p e No. 2SD 725 * 2SD 726 * 2SD 727 * * 2SD 7 2 4 _ ^ ^ ^ •ft cn * * s Manuf. = a * SANYO 2SD823 TOSHIBA fi i tö T 2SD716 2SD 728 -V &' T 2SD718 2SD 729 fi 2SD 729H 2SD 730 2SD 730H 2SD 731 * 2SD 732 * 2SD 733 V = * MITSUBISHI □— A ROHM

2SB1494

Abstract: 2SD2256
Contextual Info: To all our customers Regarding the change of names mentioned in the document, such as Hitachi Electric and Hitachi XX, to Renesas Technology Corp. The semiconductor operations of Mitsubishi Electric and Hitachi were transferred to Renesas Technology Corporation on April 1st 2003. These operations include microcomputer, logic, analog

2SD2256

Contextual Info: isc Product Specification INCHANGE Semiconductor isc Silicon NPN Darlington Power Transistor DESCRIPTION •High DC Current Gain : hFE= 2000 Min. @ IC= 12A, VCE= 4V ·High Collector-Emitter Breakdown Voltage: V(BR)CEO = 120V(Min) APPLICATIONS ·Designed for low frequency power amplifier applications.