2SB15 Search Results

Contextual Info: 2SB1565 Transistors For Power Amplification −60V, −3A 2SB1565 zStructure PNP Silicon Epitaxial Planar Transistor zExternal dimensions (Unit : mm) TO-220FN 4.5 φ3.2 8.0 2.8 1.2 1.3 14.0 5.0 15.0 zFeatures 1) Low VCE (sat). 2) Excellent electrical characteristics of DC current Gain hFE.

2SB15

Abstract: 2SB1508 KFU508 SB15 TI5C 37143
Contextual Info: [^O rdering n u m b e r: EN3714 2SB1508/2SD2281 PN P/N PN E pitaxial Planar Silicon Transistors H igh-C urrent Switching Applications Applications • Relay drivers, high-speed inverters, converters. F e a tu r e s • Low collector-to-em itter satu ratio n voltage : VQE sat = —0.5V(PNP), 0.4V(NPN)max.

nec 2501

Abstract: ic nec 2501 2SB1572 2SD2403
Contextual Info: DATA SHEET PNP SILICON EPITAXIAL TRANSISTOR 2SB1572 PNP SILICON EPITAXIAL TRANSISTOR FEATURES PACKAGE DRAWING Unit: mm • Low VCE(sat): VCE(sat)1 ≤ −0.4 V • Complementary to 2SD2403 4.5±0.1 1.6±0.2 C E 0.42 ±0.06 1.5 B 0.47 ±0.06 3.0 2.5±0.1

Contextual Info: Product specification 2SB1574 TO-252 6.50 +0.2 5.30-0.2 Features Unit: mm 2.30 +0.1 -0.1 +0.15 1.50 -0.15 +0.15 -0.15 +0.8 0.50-0.7 Possible to tsolder radiation fin directly to printed circuit boad. 0.127 max Large collector current IC. +0.1 0.60-0.1 2.3

Contextual Info: Product specification 2SB1589 Features Low collector to emitter saturation voltage VCE sat . Large collector power dissipation PC. Mini Power type package, allowing downsizing of the equipment and automatic insertion through the tape packing and the magazine

Hitachi DSA001650

Contextual Info: 2SB1530 Silicon PNP Triple Diffused Application Low frequency power amplifier color TV vertical deflection output complementary pair with 2SD2337 Outline TO-220FM 12 3 1. Base 2. Collector 3. Emitter 2SB1530 Absolute Maximum Ratings Ta = 25°C Item Symbol

transistor gb2

Abstract: gb1 transistor
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SB1578 PNP SILICON EPITAXIAL TRANSISTOR FOR LOW-FREQUENCY POWER AMPLIFIERS AND MID-SPEED SWITCHING The 2SB1578 features high current capacity in small dimension PACKAGE DRAWING UNIT: mm and is ideal for DC/DC converters and mortor drivers.

2SD2395

Abstract: 2SB1566 B350
Contextual Info: Transistors 2SB1566 2SD2395 94L-459-B350 (94L-1101-D350) 296

2SB1559

Abstract: 2SD2389 transistor 2SB1559
Contextual Info: 7 0 Ω E 2SB1559 Silicon PNP Epitaxial Planar Transistor (Complement to type 2SD2389) µA V IEBO VEB=–5V –100max µA –5 V V(BR)CEO V –8 A hFE VCEO –150 VEBO IC IC=–30mA –150min VCE=–4V, IC=–6A 5000min∗ IB –1 A IC=–6A, IB=–6mA

2SB1530

Abstract: 2SD2337 DSA0037347 Hitachi DSA003734
Contextual Info: 2SB1530 Silicon PNP Triple Diffused Application Low frequency power amplifier color TV vertical deflection output complementary pair with 2SD2337 Outline TO-220FM 12 3 1. Base 2. Collector 3. Emitter 2SB1530 Absolute Maximum Ratings Ta = 25°C Item Symbol

2SB1569

Abstract: 2SD2400
Contextual Info: SavantIC Semiconductor Product Specification 2SB1569 Silicon PNP Power Transistors DESCRIPTION •With TO-220F package ·High DC current gain ·Low collector saturation voltage ·Wide area of safe operation ·Complement to type 2SD2400 PINNING PIN DESCRIPTION

2SB1507

Abstract: 2SD2280
Contextual Info: SavantIC Semiconductor Product Specification 2SB1507 Silicon PNP Power Transistors DESCRIPTION •With TO-3PML package ·Low collector saturation voltage ·Complement to type 2SD2280 ·Wide area of safe operation APPLICATIONS ·For use in relay drivers ,high-speed

2SD2394

Abstract: 2SB1565
Contextual Info: SavantIC Semiconductor Product Specification 2SD2394 Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Low collector saturation voltage ·Wide SOA safe operating area ·Complement to type 2SB1565 PINNING PIN DESCRIPTION 1 Base 2 Collector

2SB1559

Abstract: 2SD2389
Contextual Info: SavantIC Semiconductor Product Specification Silicon PNP Darlington Power Transistors 2SB1559 DESCRIPTION •With TO-3PN package ·Complement to type 2SD2389 APPLICATIONS ·Audio ,regulator and general purpose PINNING PIN DESCRIPTION 1 Base 2 Collector;connected to

2SB1538

Abstract: 2SD2358
Contextual Info: This product complies with the RoHS Directive EU 2002/95/EC . Transistors 2SD2358 Silicon NPN epitaxial planar type For low-frequency output amplification Complementary to 2SB1538 Unit: mm 2.5±0.1 (0.8) (1.0) (0.2) 4.5±0.1 0.7 Th an W is k y Th e a pro ou

2SD1763A

Abstract: 2sd2400a 2SB1186A 2SB1275 2SB1236A 2SB1569A 2SD1857A 2SD1918 2SD2211 2SB1569
Contextual Info: Transistors 2SB1275 / 2SB1236A / 2SB1569A / 2SB1186A 2SD2211 / 2SD1918 / 2SD1857A / 2SD2400A / 2SD1763A 96-612-A58 (96-744-C58) 277

37143

Abstract: EN3714 2SB1508
Contextual Info: Ordering number:EN3714 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1508/2SD2281 50V/12A High-Current Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters. unit:mm 2039A Features [2SB1508/2SD2281] · Low collector-to-emitter saturation voltage :

EN3713

Abstract: 2SB1507 2039A
Contextual Info: Ordering number:EN3713 PNP/NPN Epitaxial Planar Silicon Transistors 2SB1507/2SD2280 50V/7A High-Current Switching Applications Applications Package Dimensions • Relay drivers, high-speed inverters, converters. unit:mm 2039A Features [2SB1507/2SD2280] · Low collector-to-emitter saturation voltage :

2SD1960

Abstract: 2sd1960 transistor 2SD1765 2SD2398 100V 2A MPT3 2SB1287 2SB1316 2SB1567 2SB1580 2SD1867
Contextual Info: 2SB1580 / 2SB1316 / 2SB1567 / 2SB12B7 2SD2195 / 2SD1960 / 2SD1867 / 2SD2398 / 2SD1765 Transistors I Power Transistor —100V, —2A 2SB1580 / 2SB1316 / 2SB1567 / 2SB1287 •F e a tu re s •A b s o lu te maximum ratings (Ta=25'C ) 1 ) Darlington connection for high DC current gain.

Contextual Info: Ordering number:EN4667 PNP Epitaxial Planar Silicon Transistors 2SB1527 Compact Motor Driver Applications Features Package Dimensions • Low saturation voltage. · Contains a diode between collector and emitter. · Contains a bias resistor between base and emitter.

Contextual Info: 2SB1561 2SD2391 Transistors Medium Power Transistor —60V, —2A I 2SB1561 •F e a tu re s 1) Low VcetMt). (Typ.—0.15V at Ic/I b = — 1V/—50mA) 2) Collector-emltter voltage = —60 V 3) Pc * 2 W (on 40 x 40 x 0.7 mm ceramic board). 4) Complements the 2SD2391.

2SD2399

Contextual Info: 2SB1568 2SD2399 Transistors Power Transistor —80V, —4A I 2SB1568 •F e a tu re s 1 ) Darlington connection for a high hFE. 2 ) Built-in resistor between base and emitter. 3 ) Built-in damper doide. 4 ) Complements the 2SD2399. •A b s o lu te maximum ratings (T a = 2 5 ,C )

Contextual Info: SILICON NPN TRIPLE DIFFUSED TYPE DARLINGTON POWER O PO W ER AMPLIFIER APPLICATIONS • • High Breakdown Voltage : VcEO = 140V(Min.) Complementary to 2SB1556 2SD2385 M A X IM U M RATINGS (Ta = 25°C) SYMBOL VfiBO VCEO VEB0 !C !B Collector Power Dissipation (Tc = 25°C) PC

2SD2374

Abstract: 30ma 40v npn 2SD2374A
Contextual Info: Inchange Semiconductor Product Specification 2SD2374 2SD2374A Silicon NPN Power Transistors DESCRIPTION •With TO-220F package ·Complement to type 2SB1548/1548A ·Low collector saturation voltage ·High forward current transfer ratio hFE which has satisfactory linearity