2SD100 Search Results

Contextual Info: Transistors IC SMD Type Product specification 2SD1005 Features World standard miniature package: SOT-89. High collector to base voltage: VCBO 100V. Excellent dc current gain linearity: hFE=80TYP. VCE=2V, IC=500mA . Absolute Maximum Ratings Ta = 25 Parameter

nec 2501

Abstract: Marking mk SOT89 SOT89 transistor marking MK 2SD1006 2SD1007 IEI-1213 MEI-1202 MF-1134 2SD1006-HM
Contextual Info: DATA SHEET SILICON TRANSISTORS 2 S D 1 6 , S 2 D 1 7 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SD1006 and 2SD1007 are designed for audio frequency power amplifier application, especially in Hybrid Integrated Circuits. FEATURES • World Standard Miniature Package

2SD1028

Abstract: 2SD1031 2SD1036 2SD1094 2SD1087 2SD1013 2SD1019 2sd1037 equivalent 2SD1028 2SD1004
Contextual Info: Absolutes maximum ratings Ta=25ºC Electrical characteristics (Ta=25ºC) VCBO VEBO Ic Pc Tj DC Current Gain hFE fab/ft* Cob PartNumber ºñ°í VCE Ic (V) (V) (mA) (mW) (ºC) (MHz) (pF) (V) (mA) 2SD1001 80 5 300 2W 150 200 1 50 140* 7 2SB800 2SD1002 45 5 1A

Contextual Info: Data Sheet N0801S R07DS0729EJ0100 Rev.1.00 May 30, 2012 NPN SILICON EPITAXIAL TRANSISTOR FEATURES •    Complements to N0801R. VCEO = 80 V IC DC = 1.0 A Miniature package SOT-23F (2SD1005: Package variation of 3pPoMM) PRODUCT LINEUP Part Number

2SB807

Abstract: 2SD1009 2SD100 j y w marking mini class t amplifier MARKING 5 Y
Contextual Info: 2SB807 b - ^ y V 7 .S 2SB807 '> U zj v PNP x kf^f +'> t PNP Epitaxial Planar ïÉïiiiÎîfÆffi^Tia^fëffl/High Voltage Low-noise Amplifier 2SD1009£ ] /Complementary Pair with 2SD1009 Unit ^ mm 4.6max. 1.8max.i • # ^ /F eatu res *<m9 *r*05 - j • u v 9 9 * -x. = -y 9 W ± . Vceo ^ S ^ 'o / H i g h V CE0

2SD1000

Abstract: 2SB799 IEI-1213 MEI-1202 MF-1134 TC-5494A SOT-89 transistor marking LM
Contextual Info: DATA SHEET SILICON TRANSISTOR 2SD1000 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SD1000 is designed fo r audio frequency power am plifier application, especially in H yb rid Integrated Circuits. FEATURES PACKAGE DIMENSIONS • World Standard M iniature Package

Contextual Info: DATA SHEET NEC / SILICON TRANSISTOR / 2SD1005 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S D 1005 is designed fo r audio frequency pow er am p lifie r app lication, especially in H y b rid Integrated Circuits. FEATURES PACKAGE DIMENSIONS

B806

Contextual Info: DATA SHEET NEC / SILICON TRANSISTORS 2SD1006,2SD1007 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2S D 1006 and 2SD1007 are designed fo r audio frequency pow er a m p lifie r a pp lica tion, especially in H y b rid Integrated Circuits.

Contextual Info: SILICON TRANSISTOR 2SD1000 NPN SILICO N EPITA X IA L TR A N SISTO R POWER MINI MOLD DESCRIPTION The 2SD1000 is designed fo r audio frequency pow er am p lifie r app lication, especially in H y b rid Integrated Circuits. FE A T U R E S PACKAGE DIMENSIONS • W orld Standard M iniature Package

Contextual Info: 2SD1009 Transistors Si NPN Power HF BJT Military/High-RelN V BR CEO (V)150 V(BR)CBO (V)150 I(C) Max. (A)50m Absolute Max. Power Diss. (W)1.0 Maximum Operating Temp (øC)150õ I(CBO) Max. (A) @V(CBO) (V) (Test Condition) h(FE) Min. Current gain. h(FE) Max. Current gain.450

Contextual Info: Transistors IC SMD Type Product specification 2SD1001 Features World standard miniature package:SOT-89. High collector-emitter voltage. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 80 V Collector-emitter voltage

smd transistor EK

Abstract: SMD MARKING el 2SD1001 SOT-89 marking ek
Contextual Info: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SD1001 Features World standard miniature package:SOT-89. High collector-emitter voltage. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 80 V Collector-emitter voltage

TRANSISTOR HK SMD

Abstract: smd ic marking HL smd marking HK transistors marking HK HL 100 Transistor HL 06 ic 2SD1006
Contextual Info: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SD1006 Features High collector to emitter voltage: VCEO 100V. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 100 V Collector-emitter voltage VCEO 100 V Emitter-base voltage

SOT-89 transistor marking LM

Abstract: smd transistor marking Lk smd transistor marking LL marking 10 sot-89 smd transistor LL 2SD1000
Contextual Info: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SD1000 Features World standard miniature package:SOT-89. Low collector saturation voltage. Absolute Maximum Ratings Ta = 25 Parameter Symbol Rating Unit Collector-base voltage VCBO 60 V Collector-emitter voltage

2sd1007

Contextual Info: NEC S IL IC O N T R A N S IS T O R S ELECTRON DEVICE 2SD1006,2SD1007 NPN SILICON EPITAXIAL TRA N SISTO RS POWER MINI MOLD DESCRIPTIO N The 2SD1006 and 2SD 1007 are designed fo r audio frequency power a m p lifie r application, especially in H ybrid Integrated

Contextual Info: SEC SILICON TRANSISTOR ElfCTRON DEVICE 2SD1001 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD D ESCRIPTION The 2SD1001 is designed fo r audio frequency power am p lifie r application, especially in H yb rid Integrated Circuits. FEA TU R ES • W orld Standard M iniature Package

K1981

Abstract: 2SD100 2SD1006 1007
Contextual Info: データ・シート シリコン・トランジスタ Silicon Transistor 2SD1006, 1007 NPN エピタキシアル形シリコン・トランジスタ 低周波増幅用 本資料の内容は，予告なく変更することがありますので，最新のものであることをご確認の上ご使用ください。

Contextual Info: NEC SILICON TRANSISTOR ELECTRON DEVICE 2SD1005 NPN SILICON EPITAXIAL TRANSISTOR POWER M IN I MOLD DESCRIPTION The 2SD1005 is designed fo r audio frequency power am p lifie r application, especially in H ybrid Integrated Circuits. FEATURES PACKAGE DIMENSIONS

SOT89 smd marking 630

Abstract: 2SD1005
Contextual Info: Transistors SMD Type NPN Silicon Epitaxia 2SD1005 Features World standard miniature package: SOT-89. High collector to base voltage: VCBO 100V. Excellent dc current gain linearity: hFE=80TYP. VCE=2V, IC=500mA . Absolute Maximum Ratings Ta = 25 Parameter Symbol

smd transistor marking HR

Abstract: smd transistor H-R transistor smd marking hq smd transistor marking HP smd transistor "marking HR" transistor smd hq 2SD1007 hFE CLASSIFICATION Marking SMD TRANSISTOR HP transistor smd hq 25 hr
Contextual Info: Transistors SMD Type NPN Silicon Epitaxial Transistor 2SD1007 Features High collector to emitter voltage: VCEO 120V. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 120 V Collector-emitter voltage VCEO 120 V Emitter-base voltage

2sd1006-hk

Abstract: 2SD1007 2SB806 2SD1006 sot89 transistor JB 9e sot-89 2SD1007-HP SK FN 521
Contextual Info: NEC '> > ; = ! > h =7 > i> 7 . 9 S ilic o n T ra n s is to r 2SD1006,1007 o ^ -fv 7 4 ' < / r ^ 7 \ v ° -7 ^ iz y 2 S B 8 0 6 t = ¡ > 7 ° ' 9 > 9 U 0 O 2SB805, 1.5 + 0.1 * Ê # Ît* Æ :fê T a = 25 °C) 2SD1006 2SD1007 # »§• -t til m i 3 v- 9 9 ■

Contextual Info: Transistors IC SMD Type Product specification 2SD1007 Features High collector to emitter voltage: VCEO 120V. Absolute Maximum Ratings Ta = 25 Symbol Rating Unit Collector-base voltage Parameter VCBO 120 V Collector-emitter voltage VCEO 120 V Emitter-base voltage

T460

Abstract: t460 transistor C947 ic 4541 c947 transistor transistor 9619 M 9619 JT MARKING 2SB800 2SD1001
Contextual Info: '> ' = ! > h =7 > Ì > ~ X 9 Silicon Transistor 2SD1001 N o -t — T 'i O ^ N x f ^ + - > 7 ; H K '> U h = 7 > i> 'X ^ K 7 -i 2SB 800 o P i mm) t ? >7° ' ) / > 9 >J T " f € ^ T " ë t t 0 Î B * , ifijIÎE, r^jhFE'C"t’o 1.5 ± 0.1 P T = 2 .0 W (0 .7 mm X 16 cm2- t e ^ -y

Contextual Info: MCC TM Micro Commercial Components 2SD1005-W 2SD1005-V 2SD1005-U
  omponents 20736 Marilla Street Chatsworth    !"# $ %    !"# Features • • • • Halogen free available upon request by adding suffix "-HF"