2SA137 Search Results

2SA1376

Abstract: transistor 2sc3478 transistor 2sa1376 2sc3478a
Contextual Info: DATA SHEET SILICON TRANSISTORS 2SA1376, 1376A PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH VOLTAGE AMPLIFIERS FEATURES PACKAGE DRAWING UNIT: mm • High voltage VCEO: −180 V / −200 V (2SA1376/2SA1376A) • Excellent hFE linearity • High total power dissipation in small dimension:

2SA1374

Abstract: Hitachi DSA0076 2SA836
Contextual Info: 2SA1374 Silicon PNP Epitaxial ADE-208-1016 Z 1st. Edition Mar. 2001 Application Low frequency amplifier Outline SPAK 1 23 1. Emitter 2. Collector 3. Base 2SA1374 Absolute Maximum Ratings (Ta = 25°C) Item Symbol Ratings Unit Collector to base voltage VCBO

bdt 95a

Contextual Info: Ordering number: EN 1412C 2SA1370/2SC3467 PNP/NPN Epitaxial Planar Silicon Transistors High-Definition CRT Display, Video Output Applications Use - Color TV chroma output and high breakdown voltage driver Features • High breakdown voltage: VCEO^200V • Small reverse transfer capacitance and excellent high frequency characteristic

2sc3478a

Abstract: 2SA1376 PA33 A1376
Contextual Info: SEC Ì ? f / \ Silicon Transistors f 7 2 S A 1 3 7 6 , 1 3 7 6 A PNP Epitaxial Transistor High Voltage Amplifier PACKAGE DIMENSIONS ^/FEA TU RES Unit : mm o ftS E tt. V ceo : ~180 V/ —200 V (2SA1376/2SA1376A) O h FE « U t O ') — T / î H ^ f é O 2 S C 3 4 78/ 2 S C 3478A t

Contextual Info: 2SA137 Plastic-Encapsulate Transistors PNP TO-92MOD Features Power dissipation PCM : 1 W Tamb=25℃ Collector current ICM : -0.1 A Collector-base voltage V V(BR)CBO : -300 Operating and storage junction temperature range TJ, Tstg: -55℃ to +150℃ 1.EMTTER 2.COLLECTOR 3.BASE

a1376

Abstract: ic nec 2051 2SA1376 2sc3478a 2SA1376A A1376A PA33
Contextual Info: PNP SILICON TRANSISTORS 2SA1 3 7 6 , 2 S A 1 3 7 6 A DESCRIPTION The 2SA1376/2SA1376A is designed for general-purpose appli­ cations requiring high Breakdown Voltages. PACKAGE DIMENSIONS in millimeters inches FEATURES • High Breakdown Voltage. V ceo 5.2 MAX.

2SC3468

Abstract: 2SA1371 ITR03305 ITR03306 ITR03307
Contextual Info: Ordering number:ENN1413D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1371/2SC3468 High-Definition CRT Display, Video Output Applications Use Package Dimensions • Color TV chroma output and high breakdown voltage driver. unit:mm 2006B [2SA1371/2SC3468]

pa1476h

Abstract: pa80c PA1501H pa1437h PA1478H PA1556A pa1428ah PA2981 PA571T PA1556AH
Contextual Info: CD-ROM版トランジスタ CD-ROM X13769XJ2V0CD00 08−1 トランジスタ パッケージ別早見表 • TO-92形トランジスタ V TO–92 CEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674

2SA1444 equivalent

Abstract: BA1F4M transistor equivalent table POWER MOS FET 2sj 2sk 2sd882 equivalent Equivalent to transistor 2sc945 2SA1206 TRANSISTOR equivalent 2SC1845 equivalent 2SK type 2SD1694 equivalent
Contextual Info: CD-ROM Transistor CD-ROM X13769XJ2V0CD00 08-1 Transistor Quick Reference by Package TO–92 • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 2SA1206∗∗ 2SA988 2SA992

Contextual Info: HITACHI 2SA1374 SILICON PNP EPITAXIAL LOW FREQUENCY AMPLIFIER t. Etnintr 2. CoJkctnr 3 . R äsc Dimensions in mm (SPAK) • ABSOLUTE MAXIMUM RATINGS ('Tn=25°C) Item MAXIMUM COLLECTOR DISSIPATION CURVE 2SA1374 Symbol Unit Collector to base voltage Vcbo -55

2SA1371

Abstract: 2sc3468
Contextual Info: Ordering number:EN1413C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1371/2SC3468 High-Definition CRT Display, Video Output Applications Use Package Dimensions • Color TV chroma output and high breakdown voltage driver. unit:mm 2006A [2SA1371/2SC3468]

2SA1371

Abstract: 2sc3468 1413B ITR03305
Contextual Info: 注文コード No.N 1 4 1 3 C 2SA1371 / 2SC3468 No. N1413C 93099 半導体ニューズ No.1413B とさしかえてください。 2SA1371 / 2SC3468 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ 高精細度 CRT ディスプレイ , ビデオ出力用

50N240

Abstract: JE9093C LOW-POWER SILICON PNP HSE194
Contextual Info: LOW-POWER SILICON PNP Item Number Part Number 10 15 20 25 30 35 40 45 50 55 60 200 200 200 200 200 200 200 200 200 200 FMMTA93 BSSn BSSn MPSA93 ESM693 2SA1330 2SA133005 2SA1255 2SA1376AL 200 200 200 200 200 200 200 200 200 85 90 95 772 30 30 30 30 30 30 30

2SA1374

Contextual Info: HITACHI 2SA1374 SILICON PNP EPITAXIAL LOW FREQ UENCY AMPLIFIER 1. Em iiter 2. C o lle c to r 3. B u m Dimensions In mm (SPAK) • ABSOLUTE MAXIMUM RATINGS (Ta=25°C) Item Symbol M AXIMUM COLLECTOR DISSIPATION CURVE 2SA1374 Unit Collector to base voilage

2SA1371

Abstract: Transistor 2sa1371
Contextual Info: 2SA1371 2SA1371 TO-92MOD TRANSISTOR PNP FEATURES Power dissipation 1. EMITTER 2. COLLECTOR PCM : 1 W (Tamb=25℃) 3. BASE Collector current ICM : -0.1 A Collector-base voltage V V(BR)CBO : -300 Operating and storage junction temperature range 123 TJ, Tstg: -55℃ to +150℃

Contextual Info: DATA SHEET SILICON TRANSISTORS 2SA1376, 1376A PNP SILICON EPITAXIAL TRANSISTOR FOR HIGH VOLTAGE AMPLIFIERS FEATURES PACKAGE DRAWING UNIT: mm • High voltage VCEO: −180 V / −200 V (2SA1376/2SA1376A) • Excellent hFE linearity • High total power dissipation in small dimension:

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistor 2SA1371 TO – 92M TO – 92MOD TRANSISTOR PNP 1. COLLECTOR 1. EMITTER 2. BASE FEATURES z High Breakdown Voltage z Small Reverse Transition Capacitance and High Frequency

2SA1370

Abstract: 2SC3467 14123 1412B ITR05089 n1412
Contextual Info: 注文コード No.N 1 4 1 2 C 2SA1370 / 2SC3467 No. N1412C 93099 半導体ニューズ No.1412B とさしかえてください。 2SA1370 / 2SC3467 PNP / NPN エピタキシァルプレーナ形シリコントランジスタ 高精細度 CRT ディスプレイ , ビデオ出力用

A1376

Abstract: A1376A 2SC3478 2SA376 52mx
Contextual Info: E L E C T R IC A L C H A R A C T E R IS T IC S T, - 25 °C 2SA1376/2SA 1376A SYM BOL +iF E C H A R A C T E R IS T IC D C Current Gain M IN . TVP. MAX. U N JT 400/600 13b lc * - 1 0 m A ton Turn-on Tim# 0.16 toff Turn-off Time 1,5 Mt fT Gain Barvdtmtfth Product

2SA1370

Abstract: 2SC3467
Contextual Info: Ordering number:EN1412C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1370/2SC3467 High-Definition CRT Display, Video Output Applications Use Package Dimensions • Color TV chroma output and high breakdown voltage driver. unit:mm 2006A [2SA1370/2SC3467]

Contextual Info: 2SA1374 Silicon PNP Epitaxial HITACHI Application L o w fre q u e n c y a m p lifie r Outline SPAK ] 11 3 162 1. E m itte r 2. C o lle c to r 3. B a s e 2SA1374 Item Symbol Ratings Unit C o lle c to r to b a s e voltage ^CBO -5 5 V I1°< m ;O Absolute Maximum Ratings Ta = 25°C

2SD1557

Abstract: 2SA1152 2SC4333 high hfe transistor 2SB1581 2SC4063 high hfe darlington transistor sc70 2sB1099 transistor transistor nec 2SB1099
Contextual Info: Transistor Quick Reference by Package • TO-92 Type Transistor VCEO V ~15 ~30 ~50 ~70 ~100 ~150 ~200 ~250 2SA1376 2SA1376A 2SC3478 2SC3478A 2SA1544 ~400 IC (A) ~20 m 2SC1674 ~30 m 2SC1675 2SA1005 2SA1206* TO–92 2SA988 2SA992 2SC1841 2SC1845 ~50 m ~100 m

Hitachi DSA002754

Contextual Info: 2SA1374 Silicon PNP Epitaxial Application Low frequency amplifier Outline 2SA1374 Absolute Maximum Ratings Ta = 25°C Item Symbol Ratings Unit Collector to base voltage VCBO –55 V Collector to emitter voltage VCEO –55 V Emitter to base voltage VEBO –5

2SA1371

Contextual Info: JIANGSU CHANGJIANG ELECTRONICS TECHNOLOGY CO., LTD TO-92MOD Plastic-Encapsulate Transistors 2SA1371 TO-92MOD TRANSISTOR PNP 1. EMITTER FEATURES Power dissipation 2. COLLECTOR PCM : 1 W (Tamb=25℃) 3. BASE Collector current : -0.1 A ICM Collector-base voltage