4686 Search Results

NPN VCEo 1000V

Contextual Info: SILICON NPN TRIPLE DIFFUSED MESA TYPE 4686/4686A TV D Y N A M I C F O C U S A P P L I C A T I O N S . U n i t in m m H IG H V O L T A G E S W I T C H I N G A P P L I C A T I O N S . 10±0.3 , H IG H V O L T A G E A M P L I F I E R A P P L I C A T I O N S .

20N50A

Abstract: 20n50 IXGH20N50 f sss 20n60 sss 20n60
Contextual Info: 4686226 ' I X Y S CORP 03 DE I •-§tiñ b SEb □□□□5E4 T~ 3 T — t £ T 1~~ £} IXGH20N50, 60 IXGM20N50, 60 20 A M PS, 5 0 0 -6 0 0 VOLTS M AXIM UM RATINGS Sym. IXGH20N50 IXGM20N50 IXGH20N60 IXGM20N60 Unit Drain-Source Voltage 1) Vdss 500 600 Vdc

LTED

Abstract: TO-238
Contextual Info: _ 4686226 _ - , _ - I X Y S CORP D Ë J HbBbEEb . □ □ D O lb S — ^ -7 * - 3 ^ - / 3 H MOSBLOCIGBT Phase-Leg Modules Inverter Series High Speed Part Number CollectorVoltage Vces (Volts) Collector Current Id @ 25 °C Case lc(conl) IC (P u lted ) (Amps)

IXTP4N50A

Abstract: IXTP4N90A IXTH12N45A IXTP3N80A IXTP3N90A IXTH15N45A IRFP460 IXTP2N100
Contextual Info: 4686226 03E 00 14 3 I X Y S CORP □3 I X Y S CO RP D T' D Ë J 4böt,52b 0 Q D 0 1 4 3 T |~~ N-Channel MOSFETs Part Number IXTP4N100A IXTP4N100 IXTP2N100A IXTP2N100 IXTP4N95A IXTP4N95 IXTP2N95A IXTP2N95 IXTP4N90A IXTP4N90 IXTP3N90A IXTP3N90 IXTP4N80A IXTP4N80

srt 6556

Abstract: MAX16057ATT MAX16056 TwdmA 4484 MOSfet MAX16058ATA
Contextual Info: 19-4686; Rev 1; 6/10 125nA Supervisory Circuits with CapacitorAdjustable Reset and Watchdog Timeouts Features The MAX16056–MAX16059 are ultra-low-current 125nA typ microprocessor (µP) supervisory circuits that monitor a single system supply voltage. These devices

Contextual Info: 19-4686; Rev 1; 6/10 125nA Supervisory Circuits with CapacitorAdjustable Reset and Watchdog Timeouts Features The MAX16056–MAX16059 are ultra-low-current 125nA typ microprocessor (µP) supervisory circuits that monitor a single system supply voltage. These devices

GP2X1

Abstract: 4686 7470
Contextual Info: 2 Way-0° Power Splitter/Combiner GP2X1+ Typical Performance Curves Total Loss Isolation 5.0 45 4.8 Total Loss S-1 4.6 Total Loss S-2 41 37 33 Isolation dB Total Loss (dB) 4.4 4.2 4.0 3.8 29 25 21 3.6 17 3.4 13 3.2 9 3.0 2830 3294 3758 4222 4686 5150 5614

Contextual Info: SHD124412 SHD124412P SHD124412N SHD124412D SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4686, REV. - HERMETIC POWER SCHOTTKY RECTIFIER Very Low Forward Voltage Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode

EN4686

Abstract: 09-r
Contextual Info: Ordering number : 4686 SBA250-09R No.4686 Schottky B arrier Diode Twin Type • Cathode Common SA\YO i 90V, 25A Rectifier A pplications •High frequency rectification (switching regulators, converters, and choppers). F e a tu re s ■Low forward voltage (Vp max = 0.75 V).

Contextual Info: UNITED STATES INTERNATIONAL NEW ENG LAND/ KANSAS/MISSOURI/ AUSTRALIA JAPAN UPSTATE NEW Y ORK NEBRASKA Advanced Technology Marketing Tel: 508 458-0200 Fax: (508) 458-7990 Central Tech Sales Tel: (314) 831-4069 Fax: (314) 839-4686 Electronic Development Sales Pty.,

Contextual Info: 4686226 03E I X Y S.CORP I X Y S CORP □3 00159 D D Ë J 4böb22t, D O D D I S T 5 |~ Power MOSIGBTs Part Number IXGP10N100 CollectorEmitter Voltage Vces Volts 1000 Continuous Pulsed Collector Current Fall Collector Current Collectoi Emitter Tc=25 °C Tc=90 °C Current Sat. Volt. Time

TO210AC

Abstract: TO-210AC TO-238 IXGN75N60 IXGM20N100A IXGM40N50 IXGM40N50A IXGM30N60
Contextual Info: 4686226 I 03E 0 0 1 6 0 I. X Y S C O R P □3 X Y S CORp D ' 7 '“ 3 ^ - /3 D eT| 4t.fit.25b DDOOltiD T Power MOSIGBTs Part Number CollectorEmltter Voltage Vces Volts Continuous Pulsed Collector Current Collector Current Collectoi Emitter Fall Tc=25 °C

irf250 dc motor

Abstract: IRF250 ic data
Contextual Info: 4686226 I X Y S CORP 03 4t.0L.22Li □ 0 D 0 2 D f l ¡j □ □IXYS TECHNICAL DATA SHEET August 1988 DATA S H E E T NO. 1002A IRFC250 High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series V BR DSS • • . . 200V 0.085a

MOSFET IRF150

Abstract: 2N6764 2N6763 IRFC150
Contextual Info: 4686226 I X Y S CORP D3 ]>e J MbfltE2t. □□□□SDb 7 "J- □IXYS TECHNICAL DATA SHEET DATA SHEET NO. i _August 1988 IRFC150 High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

Contextual Info: This document was generated on 03/18/2014 PLEASE CHECK WWW.MOLEX.COM FOR LATEST PART INFORMATION Part Number: Status: 11-18-4686 Active Description: Insulation Punch Documents: RoHS Certificate of Compliance PDF General Product Family Series Comments Function

3849

Contextual Info: 4686226 I X Y S CORP □IXYS ^ d F J M böbS Sti Q je j- ^ u . TECHNICAL DATA SHEET August 1988 DATA SHE ET NO. 1002A IRFC250 High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series V BR DSS • • • . 2 0 0 V

wabash

Abstract: 25N80A LHi 978 25n80 25N100 25N90 IXGH25N100 IXGH25N80 IXGH25N90 IXGM25N100
Contextual Info: I X Y S LOKM " 03 4686226 I X Y S C O R P DE I 4bübddb UUUUddU Jj 03E 00220 D IXGH25N80, 90, 100 IXGM25N80, 90, 100 25 AMPS, 800-1000 VOLTS MAXIMUM RATINGS Sym. IXGH25N80 IXGM25N80 IXGH25N90 IXGM25N90 IXGH25N100 IXGM25N100 Unit Drain-Source Voltage 1 Vd ss

SD175SA45

Abstract: SHD124412 SHD124412D SHD124412N SHD124412P
Contextual Info: SHD124412 SHD124412P SHD124412N SHD124412D SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4686, REV. - HERMETIC POWER SCHOTTKY RECTIFIER Very Low Forward Voltage Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode

2N6763

Abstract: 1RF151 2N6764
Contextual Info: 4686226 I X Y S CORP D3 ]>e J Mt.0t.EEt. □ □ □□ S D b 7 "J- □IXYS TECHNICAL DATA SHEET DATA SHEET NO. i _ August 1988 IRFC150 High Voltage Power MOSFET Die N-Channel Enhancement Mode High Ruggedness Series

Contextual Info: SHD124412 SHD124412P SHD124412N SHD124412D SENSITRON SEMICONDUCTOR TECHNICAL DATA DATA SHEET 4686, REV. - HERMETIC POWER SCHOTTKY RECTIFIER Very Low Forward Voltage Applications: • Switching Power Supply • Converters • Free-Wheeling Diodes • Polarity Protection Diode

82-6097-RFX

Contextual Info: 82-6097-RFX DRAWING NOT F S : TH 1 RD ANGLE R E V 1S I O N S NO. PRO J. REV D E S C R 1P T I O N DATE ECO A B R E L E A S E TO MFG. SEE SHEET 1 1/6/00 12/ 11 / 0 7 43222 46861 <§> M A T E R I A L S OF C O N S T R U C T I O N : BRASS, NI C K E L PLATING OUT E R B OD Y , I NNER BODY , HEX NUT,

marking code cl

Contextual Info: REV ELFF SERIES PART NUMBERIN G SCHEME ELF F TYPE FRONT WIRE E N T R Y / FRONT ACTUATION J ECN APPD 3600 4686 47 9 2 4821 574 2 JC 1 2 /1 1 /9 8 IQ 1 / 2 / 0 2 IQ 3 /1 1 / 0 2 IQ 4 / 9 / 0 2 OPTIONS COLOR/PLATING NUMBER OF POSITIONS — 0=BLACK, TIN (STANDARD)

20n50

Abstract: 20N50A IXGH20N50 c 20n50
Contextual Info: ' 4686226 I X Y S CORP 03 D E I 4hflbaEti ODDDSSM T • "” T~ 3 T —t £ o IXGH20N50, 60 IXGM20N50, 60 20 A M PS, 5 0 0 -6 0 0 VO LTS M A X IM U M RA TIN G S Parameter IXGH20N50 IXGM20N50 Sym. Drain-Gate Voltage Rgs 1-OMii) (1) = 600 Vd g r 600 Vdc Vg s

20n80

Abstract: 20N90 20N80A 20N100
Contextual Info: 4686226 I X Y S CORP ¡J3 ß T | MhfibSEk O O D G E S l 3 T~ 37-13 IXGH20N80, 90, 100 IXGM20N80, 90, 100 * 2 0 A M PS, 8 0 0 -1 0 0 0 VOLTS MAXIMUM RATINGS Unit Drain-Source Voltage 1 Vd s s 800 900 1000 Vdc Drain-Gate Voltage (Rg s = 10M Ü) (1) Vd g r