IXTP4N50A
Abstract: IXTP4N90A IXTH12N45A IXTP3N80A IXTP3N90A IXTH15N45A IRFP460 IXTP2N100
Contextual Info: 4686226 03E 00 14 3 I X Y S CORP □3 I X Y S CO RP D T' D Ë J 4böt,52b 0 Q D 0 1 4 3 T |~~ N-Channel MOSFETs Part Number IXTP4N100A IXTP4N100 IXTP2N100A IXTP2N100 IXTP4N95A IXTP4N95 IXTP2N95A IXTP2N95 IXTP4N90A IXTP4N90 IXTP3N90A IXTP3N90 IXTP4N80A IXTP4N80
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ixtp4n100aixtp4n100ixtp2n100aixtp2n100+12ixtp4n95aixtp4n95ixtp2n95aixtp2n95ixtp4n90aixtp4n90ixtp4n50aixth12n45aixtp3n80aixtp3n90aixth15n45airfp460
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4n90
Abstract: 4N80A IXTM4N90
Contextual Info: I X Y S CORP 1ÔE D • 4 taÖb E S ta GGGObG? 3 ■ IXTP4N80, IXTP4N90, IXTM4N80, IXTM4N90 'T '3 °l - 13 4 A M P S- 800-900 V, 2.4Q/3.0Q □ IX Y S MAXIMUM RATINGS Parameter Sym . Draln-Source Voltage 1 Drain-Gate Voltage (RQS =1.0 MQ) (1) Gate-Source Voltage Continuous
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dg0dl07ixtp4n80ixtp4n90ixtm4n80+4ixtm4n90el4204n904n80a
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4n90
Abstract: 4N80 4N80A IXTM4N80 IXTM4N90 IXTP4N80 IXTP4N90 4N80R
Contextual Info: I X Y S CORP □ IX Y S 1ÔE D • 4 ta Öb E S ta GGGObG? 3 ■ IXTP4N80, IXTP4N90, IXTM4N80, IXTM4N90 'T '3 °l - 13 4 AMPS- 800-900 V, 2.4Q/3.0Q MAXIMUM RATINGS Parameter Sym . IXTP4N80 IXTM4N80 IXTP4N90 IXTM4N90 Draln-Source Voltage 1 VDss 800 900 800
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dg0dl07ixtp4n80ixtp4n90ixtm4n80+6ixtm4n90o-2204n904n804n80a4n80r
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2n6152
Abstract: 1N7000 2N61B 2N676 2N6757 1N7001 2N5184 2N6164 2n6800 IXTP4N90
Contextual Info: - 248 M - € tt f ft t Vd s or € i * £ Vg s ÍS Ta=25'0 * /CH Vd g as. 1GSS Pd Id V g s th 1DSS max * /CH ft % 4# fe (13=2 5 * 0 Id (on) Vd s = Vg s Ciss Coss Crss ft & m n V g s =0 (*typ) (max) (pF) (max) *typ (0) *typ (A) Id (A) Vg s (V) *typ (S) Id
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2n6755t0-204aa2n6756o-204aa+142n67572n67582n6791o-205af2n67922n61521n70002n61b2n6761n70012n51842n61642n6800ixtp4n90
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1N7001
Abstract: 1N7000 8SS89 4900 SIEMENS 2N6155 2N6823 2N6826 BUZ11 BUZ211 IXTP4N90
Contextual Info: - M. A %¿ £ tt t Vd s or * Vd g h V € £ të (Ta=25^C) Vg s (V) Ig s s Pd Id * /CH * /CH (A) (W) % 1 CnA) V g s th) Id s s Vg s (V) (m a Vd s (V) ) min max (V) (V) Vd s = Vg s Id (mA) Ö-) '14 F Ds(on) b(on) gfs Ciss Coss Crss <*typ) (max) (pF) (*typ)
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xtp4n80o-220ixtp4n80aixtp4n90+13t0-204aa2n6659o-205af2n66601n70011n70008ss894900 siemens2n61552n68232n6826buz11buz211
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MJ1005
Abstract: MD5000A 2N3052 MJ12010 IXTP2N100A MD7000 MJ10011 MJ11017 IXTP4N90A MJ12007
Contextual Info: STI Type: IXTM3N100A Notes: Breakdown Voltage: 1000 Continuous Current: 3 RDS on Ohm: 7.0 Trans Conductance Mhos: 1.5 Trans Conductance A: Gate Threshold min: Gate Threshold max: Resistance Switching ton: Resistance Switching toff: Resistance Switching ID:
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ixtm3n100ao-204aa/to-3ixtm3n70aixtm3n70+12mj13081mj13091mj1005md5000a2n3052mj12010ixtp2n100amd7000mj10011mj11017ixtp4n90amj12007
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IRF250
Abstract: IXTH13P20 IXTP2N95 IXTP2N100A IXTP2N95A IXTP4N100 IXTP4N100A IXTP4N90 IXTP4N90A IXTP4N95
Contextual Info: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per formance and ruggedness in high voltage switching applications. In addition, they are directly com
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00v/12airf250ixth13p20ixtp2n95+7ixtp2n100aixtp2n95aixtp4n100ixtp4n100aixtp4n90ixtp4n90aixtp4n95
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1N7001
Abstract: 2N6155 4900 SIEMENS 1N7000 BUZ54 2N6759 2n6800 2N6823 BUZ211 IXTP4N90
Contextual Info: - 248 - f M € tt € ft * V 2N6755 2N6756 2N6757 2N6758 2N6759 2N6Ï6Û 2N6761 2N6762 2K6763 2N6764 2N6765 2N6766 2N6767 2N6768 2N6769 2N6770 2N6782 2N6784 2Ü6736 2N6788 2N679Û 2N6792 2N6794 2N6796 2K6798 2N6800 2N6802 2N6804 2N6806 2N6845 IR IR IR IR
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2n6755t0-204aa2n6756o-204aa+142n67572n67582n6659o-205af1n70012n61554900 siemens1n7000buz542n67592n68002n6823buz211ixtp4n90
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1N7001
Abstract: 1N7000 IXTP4N90 2N6660 2N6661 2N6755 IXTP4N80A IXTP7N45 IXTP7N45A IXTP7N50
Contextual Info: 271 - - M. % ¿ £ tt t Vd s or * Vdg h V € A £ të (Ta=25^C) Vg s (V) Id I gss Pd * /CH * /CH (A) (W) % 1 CnA) V g s th) I dss Vg s (V) (m a Vd s (V) ) min max (V) (V) Vd s = Vg s Id (mA) Ö-) '14 F Ds(on) b(on) (Ta=25tD) gfs Ciss Coss Crss <*typ) (max)
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xtp4n80o-220ixtp4n80aixtp4n90+12t0-204aabup61o-204aabup621n70011n70002n66602n66612n6755ixtp7n45ixtp7n45aixtp7n50
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IXTH13P20
Abstract: 2n7100 IXTP2P50 MOSFET IRF460 irf460 to-247 IXTM10P50 IXTM11P50 IXTP4N100A 2n7103 irf460
Contextual Info: I X Y S CORP 1ÔE D • 4böb52b QQODSbl S ■ f JIGH VOLTAGE POWER MOSFETs The IXYS family of high voltage Nand P-channel Power MOSFETs is designed to provide superior per formance and ruggedness in high voltage switching applications. In addition, they are directly com
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ixth13p202n7100ixtp2p50mosfet irf460+6irf460 to-247ixtm10p50ixtm11p50ixtp4n100a2n7103irf460
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2N7003
Abstract: 1N7001 2N7009 1N7000 2N7011 2N7073 2N7005 IXTP4N90 IXTP4N90A 2N6660
Contextual Info: 271 - - M. A %¿ £ tt t Vd s or * V dg € h V £ të (Ta=25^C) Vg s Pd Id (V) I gss V g s th) I dss min * /CH * /CH (W) (A) % 1 CnA) Vg s (V) (m a Vd s (V) ) Vd s = Vg s max Id (mA) (V) (V) Ö-) '14 F D s( o n ) b(on) (Ta=25tD) gfs Ciss Coss Crss <*typ)
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xtp4n80o-220ixtp4n80aixtp4n90+11o-254aa2n70772n70031n70012n70091n70002n70112n70732n7005ixtp4n90a2n6660
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1N7000
Abstract: 1N7001 15 KW motor 1N6660 1N6784 IXTP4N90A IXTP7N50A 2N6660 2N6661 2N6755
Contextual Info: 271 - - M. %¿ £ tt t Vd s or * Vdg € h A V £ të (Ta=25^C) Vg s Pd Id (V) I gss V g s th) I dss min * /CH * /CH (W) (A) % 1 CnA) Vg s (V) (m a Vd s (V) ) Vd s = Vg s max Id (mA) (V) (V) Ö-) '14 F D s (o n ) b(on) (Ta=25tD) gfs Ciss Coss Crss <*typ)
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xtp4n80o-220ixtp4n80aixtp4n90+13case79-052n67842n67881n70001n700115 kw motor1n66601n6784ixtp4n90aixtp7n50a2n66602n66612n6755
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TXD10K40
Abstract: TXD10K60 BT1690 BT808 1N5004 TXD10H60 mp8706 TXC10K40 BSTC1026 BT13G
Contextual Info: N AMER PHILIPS/DISCRETE 86 BSE D • X'Ql-oX bbS3131 QOlbSbH 4 ■ General Information CROSS REFERENCE GUIDE INDUSTRY PART NUMBER PG. NEAREST EQUIV. NO. 0105-50 0204-50 0510-25 12F5 12F5R BLU52 BLU52 BLV97 BYX99-300 BYX99-300R 12F10 12F10R 12F20 12F20R 12F40
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bbs3131blu521n321byw56+131n321ablv971n322txd10k40txd10k60bt1690bt8081n5004txd10h60mp8706txc10k40bstc1026bt13g
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