MOSFET IRF460
Abstract: IRF460 IRF462 APPLICATIONS OF IRF460 MOSFET 1rf460
Text: , choppers, audio amplifiers and high energy pulse circuits. Product Summary Part Number IRF460 IRF462 , in Millimeters and (Inches) G-183 IRF460 , IRF462 Devices V .S . HE 0 I MÔ55452 000=1207 fi I INTERNATIONAL R E C T IFIE R T-39-15 IRF460 21 14 84 300 2.4 ±20 1200 (See Fig. 14 , Drain*to-Source Breakdown Voltage Type ALL 1RF460 IRF462 'D(an) On*State Drain Current © IRF460 IRF462 v , Fig. 10 Modified MOSFET symbol showing the internal . inductances. ^ -i t Units V n Test Conditions V
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G-189
IRF460,
IRF462
QGCHE13
G-190
MOSFET IRF460
IRF460
APPLICATIONS OF IRF460
MOSFET 1rf460
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MOSFET IRF460
Abstract: IRF460 irf462
Text: Ratings (T q = + 2 5 0 C ) , U n le s s O th e rw is e S p e c ifie d IRF460 IRF462 21 14 84 , e r 2277.1 4 3 0 2 27 1 0 0 5 3 ^ 7 ^ 3ST â HAS IRF460 . IR F462 ELECTRICAL , ALL 500 - - V V q S = 0V I d = 250 jtA IRF460 - 0 24 0 27 0 v - 027 035 IRF460 21 - - IRF462 Drain-to-Source Breakdown Voltage Type IRF462 , Fig 10 Modified MOSFET symbol showing the internal * inductances. ^ -p . RthJC
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43G2271
MOSFET IRF460
IRF460
irf462
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IRF series
Abstract: for driver circuit for mosfet IRF240 IRF350 MOSFET driver IRF 543 MOSFET irf460 IRF 870 aK 9AA diode IRF450A irf150 compliment alps 83 7n
Text: IRF360 IRF430 IRF440 IRF450 ALPHA DESIGNATION a DEVICE IRF460 IRFAC30 IRFAC40 IRFAE30 IRFAE40 IRFAE50 , power MOSFET transistors. The efficient geometry and unique processing of this latest "State of the Art , I9R Part Number IRF460 21 14 84 300 2.4 IRFAC30 3.6 2.3 14 75 0.6 ±2 0 1200 21 30 3.5 180 3.6 7.5 3.0 , IRF430 IRF440 IRF450 IRF460 IRFAC30 IRFAC40 IRFAE30 IRFAE40 IRFAE50 IRFAF30 IRFAF40 IRFAF50 IRFAG30 , IRF240 IRF250 IRF330 IRF340 IRF350 IRF360 N-Channel IRF430 IRF440 IRF450 IRF460 IRFAC30 IRFAC40 IRFAE30
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4311 mosfet transistor
Abstract: D 4206 TRANSISTOR transistor D 322 Power MOSFETs D 843 Transistor Transistor irf230 h a 431 transistor MOSFET IRF460 n-channel 4336 742r
Text: , IRF450R/451R/452R/453R IRF460 , IRF462 N-Channel Enhancement-Mode Power Field-Effect Transistor , Power MOSFET Avalanche Energy Rated. N-Channel Power MOSFETs , Power MOSFET Avalanche Energy Rated. N-Channel Power MOSFET , ). 70A, 30V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFET (MegaFET
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2N6755,
2N6756
2N6757,
2N6758
2N6759,
2N6760
2N6761,
2N6762
2N6763,
2N6764
4311 mosfet transistor
D 4206 TRANSISTOR
transistor D 322
Power MOSFETs
D 843 Transistor
Transistor irf230
h a 431 transistor
MOSFET IRF460
n-channel 4336
742r
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transistor equivalent irf510
Abstract: 966a transistor equivalent irf740 irf460a HEXFET III - A new Generation of Power MOSFETs fet irf840 transistor equivalent irf520 IRF83Q AN949A High frequency switching AN-966A
Text: of machine performance results in a product which offers the power MOSFET user the optimum in price , IRF840 IRF450 IRF460 19 120 36 190 210 69 290 280 230 520 510 860 1.200 56 2.0 92 3.3 25 14 0 5.5 , Another aspect of ruggedness in a power MOSFET is its ability to withs tand a rapidly rising forward , transistor in a power MOSFET to conduct, resulting in cur rent crowding and breakdown of the device. This , manufacturers' data on this aspect of MOSFET performance. the freewheel diode of one of the switching devices
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IRF250
Abstract: IXTH13P20 IXTP2N95 IXTP2N100A IXTP2N95A IXTP4N100 IXTP4N100A IXTP4N90 IXTP4N90A IXTP4N95
Text: IXYS CORP 16E D â MbfibSab OOOQSbl S â fJIGH VOLTAGE POWER MOSFETs -t^s IXYS TECHNOLOGY OFFERS SUPERIOR RUGGEDNESS AND RELIABILITY Energy (millijoules) 1800 Actual Test Results 500V/12A Device L = 10 mH Temp. = 25°C 162 1.0 1700 1000 800 IXYS Company A Company B Company C Company D Company E MOSFET Suppliers The IXYS family of high voltage N-and P-channel Power MOSFETs is designed to provide superior , 24 1.5 1570 135 1 IXTM4N60A 600 4 16 2.1 700 75 1 IXTM4N60 600 4 16 2.4 700 75 1 IRF460 500 20 80
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00V/12A
IRF250
IXTH13P20
IXTP2N95
IXTP2N100A
IXTP2N95A
IXTP4N100
IXTP4N100A
IXTP4N90
IXTP4N90A
IXTP4N95
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IXTH13P20
Abstract: 2n7100 IXTP2P50 MOSFET IRF460 irf460 to-247 IXTM10P50 IXTM11P50 IXTP4N100A 2n7103 irf460
Text: 25°C 1700 1000 162 1.0 800 Company A Company B Company C Company D Company E MOSFET Suppliers , IXTM4N60 600 4 16 2.4 700 75 1 IRF460 500 20 80 0.27 4100 300 1 IXTM15N50A 500 15 60 0.4 2700 175 1
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2005 - SLUP169
Abstract: slup206 peter markowski SLUP206 Design And Application Guide For High Speed MOSFET IC SEM 2005 MOSFET DRIVER LIST igbt mosfet driver Bill Andreycak SLUA341 synchronous rectifier mosfet
Text: Application Report SLUA341 June 2005 Optimizing MOSFET Characteristics by Adjusting Gate , switching properties of the MOSFET and various methods that can be used to turn the devices on and off as , role it can play in overall power converter efficiency. The operating characteristics of a MOSFET , frequency and load current trade-offs present general MOSFET power loss equations. For discrete MOSFET gate , with the MOSFETs being driven. Driving a MOSFET gate with a higher voltage, results in a lower
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SLUA341
SLUP169
slup206 peter markowski
SLUP206
Design And Application Guide For High Speed MOSFET
IC SEM 2005
MOSFET DRIVER LIST
igbt mosfet driver
Bill Andreycak
SLUA341
synchronous rectifier mosfet
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2012 - E-MOSFET
Abstract: emosfet R00C
Text: storage capacitor (CST) to provide the charge needed for fast turn-on switching of an external MOSFET device. When the MOSFET is on, the photo current from the LED keeps the MOSFET gate biased to the rated voltage continuously. The CPC1590 uses charge from the load voltage when turning off to restore the MOSFET , using the CPC1590 gate driver. The part allows the user to turn on the gate of a MOSFET , and keep it on , , between pins 7 and 8, MOSFET gate current, and between pins 5 and 6. Leakage currents will discharge the
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AN-202
CPC1590
AN-202-R00C
E-MOSFET
emosfet
R00C
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2010 - AAT4910
Abstract: AAT4910IJS-T1 BAS16 SC70JW-8 Si4908DY dy 450a mosfet audio amplifier circuit 1000F-DC motor 28v dc
Text: PRODUCT DATASHEET AAT4910 FastSwitchTM 28V Half-Bridge Dual N-Channel MOSFET Driver General Description Features The AAT4910 is a 28V half-bridge dual MOSFET driver for high-current DC-DC converter and motor driver applications. It drives both high-side and low-side N-channel MOSFET switches controlled by a logic input. The internal driver circuitry and MOSFET driver power comes from a , range . Input Voltage Range up to 28V Dual N-Channel MOSFET Switches Shoot-Through Protection
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AAT4910
AAT4910
SC70JW-8
AAT4910IJS-T1
BAS16
Si4908DY
dy 450a
mosfet audio amplifier circuit
1000F-DC
motor 28v dc
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New Design Concepts
Abstract: on semiconductor "Transistor Arrays" ALD110900 MOSFET "CURRENT source" depletion mode mosfet Epad Product mosfet depletion ALD110800 ALD110802 ALD110808
Text: NEW DESIGN CONCEPTS IN ULTRA LOW VOLTAGE AND NANOPOWER CIRCUITS WITH EPAD MOSFET ARRAYS Advanced , introduction of EPAD® MOSFET matched-pair arrays (EPAD MOSFET ). One of the key constraints designers deal with is the gate threshold voltage at the basic transistor level. The paradigm that EPAD MOSFET arrays , MOSFET describes a broad selection of devices with precisely set gate threshold voltage values , Description ALD EPAD MOSFET matched-pair Arrays are a unique family of monolithic quad/dual N-Channel zero
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1998 - irf510 switch
Abstract: irf840 mosfet drive circuit diagram MOSFET IRF740 as switch irf520 switch IRFZ44 mosfet IRFZ44 IRF540 IRF510 application note gate drive for mosfet irfz44 power MOSFET IRF740 driver circuit
Text: Application Note 24 Micrel Application Note 24 Designing with Low-Side MOSFET Drivers by , changing drain voltage, which steals from the available gate-drive current of the MOSFET drive circuit , to rise. As the voltage on the gate rises, the drain-to-source resistance of the MOSFET falls to its optimally low level. Introduction The proper marriage of a MOSFET driver to a power MOSFET is , fall times of the MOSFET , reduces MOSFET switching losses. However, using the wrong MOSFET
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2009 - E-MOSFET
Abstract: emosfet Switchmode power supply handbook cpc1590 AN-202 FQP20N06L IRLWI630A
Text: the user to turn on the gate of a MOSFET and keep it on until the LED current is turned off. The , provide the charge needed for fast turn-on switching of an external MOSFET device. When the MOSFET is on, the photo current from the LED keeps the MOSFET gate biased to the rated voltage continuously. The CPC1590 uses charge from the load voltage when turning off to restore the MOSFET gate's switching charge , of charge to be transferred to the gate of the MOSFET . The turn-off cycle does not depend on the
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CPC1590
AN-202
AN-202-R00B
E-MOSFET
emosfet
Switchmode power supply handbook
AN-202
FQP20N06L
IRLWI630A
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2011 - MK06A
Abstract: LM5050MK-1
Text: Side OR-ing FET Controller operates in conjunction with an external MOSFET as an ideal diode rectifier , -1 controller provides charge pump gate drive for an external N-Channel MOSFET and a fast response comparator , external N-Channel MOSFET Fast 50ns response to current reversal 2A peak gate turn-off current Minimum , will pull the GATE pin low and turn off the external MOSFET . 4 IN 5 GATE 6 OUT www.national.com Voltage sense connection to the external MOSFET Source pin. Connection to the external MOSFET
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LM5050-1
LM5050-1
MK06A
LM5050MK-1
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1998 - 4800 mosfet
Abstract: mosfet 4800 1kw mosfet MC33091A 2N2222 MC33198 MC33198D MTP50N06 Application Report mosfet diagram 4800 power mosfet
Text: MOSFET for high side drive applications. The device can drive and protect a large variety of MOSFET . The device has CMOS compatible input control, charge pump to drive the MOSFET gate, fault detection , reports the output status in both on and off MOSFET state. The device uses few external components and , to Report an Over MOSFET Current Condition ¥ Output Status Available when MOSFET is On or Off ¥ , + 14V MOSFET GATE (V) 0V < Vbat PIN 2 VOLTAGE LOAD VOLTAGE (V) MOSFET SOURCE (V) 0V 10V
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MC33198
MC33198D
4800 mosfet
mosfet 4800
1kw mosfet
MC33091A
2N2222
MC33198
MTP50N06
Application Report mosfet diagram
4800 power mosfet
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2003 - sso8 package
Abstract: MOSFET P SOT-23 BUZ350 BS0615NV BUZ345 SOT323 MOSFET P tda 2850 n-channel 250V power mosfet smd buz341 BSS138N
Text: constantly shrinking in size, increasing the power density. WE CAN HELP you out. Our OptiMOS®2 power MOSFET , Integrated switch = Gate driver + power MOSFETs High-speed MOSFET driver in single & dual version Used , Product Description Voltage Class Page P-Channel MOSFET -20V 12 P-Channel MOSFET -20V 12 P-Channel MOSFET -20V 12 P-Channel MOSFET -20V 12 P-Channel MOSFET -30V 12 P-Channel MOSFET -20V 12 P-Channel MOSFET -20V 12 P-Channel MOSFET -20V 12 P-Channel MOSFET -20V 12 P-Channel MOSFET -20V 12
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B152-H8203-X-X-7600
sso8 package
MOSFET P SOT-23
BUZ350
BS0615NV
BUZ345
SOT323 MOSFET P
tda 2850
n-channel 250V power mosfet smd
buz341
BSS138N
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Switching power supply Schematic Diagram N-Channel MOSFET
Abstract: CLASS D AUDIO AMPLIFIER AAT4910 AAT4910IJS-T1 BAS16 SC70JW-8 Si4908DY
Text: PRODUCT DATASHEET AAT4910 FastSwitchTM 28V Half-Bridge Dual N-Channel MOSFET Driver General Description Features The AAT4910 is a 28V half-bridge dual MOSFET driver for high-current DC-DC converter and motor driver applications. It drives both high-side and low-side N-channel MOSFET switches controlled by a logic input. The internal driver circuitry and MOSFET driver power comes from a , range . Input Voltage Range up to 28V Dual N-Channel MOSFET Switches Shoot-Through Protection
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AAT4910
AAT4910
SC70JW-8
Switching power supply Schematic Diagram N-Channel MOSFET
CLASS D AUDIO AMPLIFIER
AAT4910IJS-T1
BAS16
Si4908DY
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2005 - MOSFET driver
Abstract: POWER MOSFET Rise Time 1 ns dual high side MOSFET driver with charge pump full bridge high speed mosfet driver delay line 400ns EL7156
Text: ® Power MOSFET Drivers 15 P OWER MANAGEMENT Power MOSFET Drivers (pg. 15-1 , Copyright © 2005 Intersil Americas Inc. All rights reserved. Power MOSFET Drivers 15 www.intersil.com/power/ Integrated Drivers + FETs Device ISL6571 Device Description MOSFET Driver with Integrated , Device Description High Speed Single Channel Power MOSFET Driver High Speed Monolithic Pin Driver High , Description High Speed Dual Channel Power MOSFET Driver High Speed Dual Channel Power MOSFET Driver High Speed
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1-888-INTERSIL
ISL6571
HIP6301
200ns,
400ns)
ISL6614A
MOSFET driver
POWER MOSFET Rise Time 1 ns
dual high side MOSFET driver with charge pump
full bridge high speed mosfet driver
delay line 400ns
EL7156
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2008 - E-MOSFET
Abstract: S 170 MOSFET TRANSISTOR RLED6 emosfet MOSFET QG CPC1580 SA24A SUD23N06-31L SUD45N05-20L AN-201
Text: allows the user to turn on the gate of a MOSFET and keep it on until LED current stops flowing. The , charge needed for fast turn-on switching of the MOSFET device. When the MOSFET is on, the photo current from the LED keeps the MOSFET gate biased to the CPC1580's rated voltage continuously. 2.1 , holding a reservoir of charge to be transferred to the gate of the MOSFET . The turn-off cycle doesn't , (FARADS) VLOAD - VCAP QG is the MOSFET 's total gate charge; VCAP > 15V. Equation 1 shows that the
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CPC1580
AN-201
AN-201-R00C
E-MOSFET
S 170 MOSFET TRANSISTOR
RLED6
emosfet
MOSFET QG
SA24A
SUD23N06-31L
SUD45N05-20L
AN-201
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1998 - Parallel operation mosfet
Abstract: FDP7030L Mosfet application note fairchild 40A 45V to-220 Schottky MOSFET DATA BOOK Power MOSFET, Fairchild FDB6030L FDB603AL FDB7030L FDP6030L
Text: choosing the optimum power MOSFET to be used with Fairchild's family of DC-DC converter controllers. The optimum MOSFET choice will be that which meets all of the system requirements at the smallest component cost. Calculating Power Dissipation and MOSFET Case Temperature There are three components of , on MOSFET selection are: The power dissipation when the MOSFET is turned fully on : 2. The , affects the MOSFET power dissipation; I load ´ V DS ´ T r ´ F s P tr,on =
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AB0000008
Parallel operation mosfet
FDP7030L
Mosfet application note fairchild
40A 45V to-220 Schottky
MOSFET DATA BOOK
Power MOSFET, Fairchild
FDB6030L
FDB603AL
FDB7030L
FDP6030L
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2009 - IRF540NS
Abstract: 1423C 15-V BZX84C7V5 SMAJ60A SR-332 TPS2490 AN75-16 IRF1324 SLVC033
Text: to control start-up inrush and fault currents. During these transient events, the MOSFET dissipates power greater than steady-state and can well exceed the thermal limits of the MOSFET . These factors require consideration when selecting the MOSFET . This application report describes the steps required to properly choose a MOSFET that can meet the power dissipation requirements under all of the event areas. An , MOSFET is discussed in this document. Figure 1 shows the schematic of this circuit. Figure 1. TPS2490
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SLVA379
IRF540NS
1423C
15-V
BZX84C7V5
SMAJ60A
SR-332
TPS2490
AN75-16
IRF1324
SLVC033
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design of mosfet based power supply
Abstract: AN6070 SCHEMATIC POWER SUPPLY WITH mosfet parallel mosfet AN6048 simple power supply using mosfet multiple mosfet gate driver
Text: Using HVOUT Simulator Utility to Estimate MOSFET Ramp Times November 2005 Application Note , "PowerManager_HVOUT_Sim.exe" (HVOUT_Sim) is included in PAC-Designer® to simulate the behavior of various MOSFET circuits when , also uses ordinary data sheet parameters instead of a SPICE model for simulating the MOSFET . This , single HVOUT driving an N-Channel MOSFET that switches a supply voltage to a load as shown in Figure 2. A gate resistor value is suggested based on the MOSFET parameters. www.latticesemi.com 1
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AN6070
ispPAC-POWR1208
ispPAC-POWR1208P1
ispPAC-POWR1220AT8
AN6043
AN6048
ispPAC-POWR1208
1-800-LATTICE
design of mosfet based power supply
AN6070
SCHEMATIC POWER SUPPLY WITH mosfet
parallel mosfet
simple power supply using mosfet
multiple mosfet gate driver
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2008 - 230 to 110v step down transformer
Abstract: ZXGD3101 STPR1020CT zvs flyback driver diodes sy 360 AN54 TS16949 simple Switching adapter DC out 19V zener 431 dallas CCM Flyback synchronous rectification
Text: the ZXGD3101 synchronous MOSFET controller Adrian Wong & Yong Ang, Diodes Incorporated Introduction , aid of the ZXGD3101 synchronous MOSFET controller and studies its practical limit against normal , 250 watts 0.5 watts 0.5 watts Synchronous MOSFET controller improves flyback adapter , www.diodes.com AN54 Replacing the output diode in Figure 1 with a more efficient MOSFET is recognized as a , synchronous MOSFET controller was introduced to drive MOSFET in such a way that it can emulate performance of
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ZXGD3101
D-81541
TX75248,
230 to 110v step down transformer
STPR1020CT
zvs flyback driver
diodes sy 360
AN54
TS16949
simple Switching adapter DC out 19V
zener 431 dallas
CCM Flyback synchronous rectification
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1995 - Not Available
Abstract: No abstract text available
Text: LM9061 www.ti.com SNOS738F APRIL 1995 REVISED APRIL 1995 LM9061 Power MOSFET Driver with , High Side Drive Applications Lossless Protection of the Power MOSFET Programmable MOSFET Protection , which provides the gate drive to any size external power MOSFET configured as a high side driver or , MOSFET . A builtin 15V zener clamps the maximum gate to source voltage of the MOSFET . When commanded OFF a 110 µA current sink discharges the gate capacitances of the MOSFET for a gradual turn-OFF
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LM9061
SNOS738F
LM9061
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2002 - MOSFET P channel SOT-23
Abstract: nicd 3.6v battery datasheet 12V P-Channel Power MOSFET 36V Li-Ion battery charge controller 4412 8 pin 4v power supply converter fully protected p channel mosfet logic level n channel MOSFET Logic Level p-Channel Power MOSFET LTC4412
Text: Range 2.5V to 28V Battery Voltage Range Reverse Battery Protection Drives Almost Any Size MOSFET for Wide Range of Current Requirements MOSFET Gate Protection Clamp Manual Control Input Low Profile , Logic Controlled Power Switch The LTC®4412 controls an external P-channel MOSFET to create a near , across the MOSFET is as low as 10mV. For applications with a wall adapter or other auxiliary power , the load current. The gate driver includes an internal voltage clamp for MOSFET protection. The
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LTC4412
300mA
LTC1733/LTC1734
10-Lead
LTC1960
36-Lead
LTC1998
LTC4350
4412i
MOSFET P channel SOT-23
nicd 3.6v battery datasheet
12V P-Channel Power MOSFET
36V Li-Ion battery charge controller
4412
8 pin 4v power supply converter
fully protected p channel mosfet
logic level n channel MOSFET
Logic Level p-Channel Power MOSFET
LTC4412
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