2N6764 Search Results

2N6764

Abstract: 2N6763 27812
Contextual Info: FAIRCHILD SEMICONDUCTOR A4 DË 3 4 ^ 7 4 3469674 F AIRCHILD SEMICONDUCTOR □□27Û1D 1 J - 84D 2 7 8 1 0 D 2N6763/2N6764 T - *7-/3' N-Channel Power M O SFETs, 38 A, 60 V/100 V' F A IR C H IL D A Schlumberger Company Power And Discrete Division TO-2Q4AE

2n5764

Abstract: 2N6764 JANTXV 2N6764 JANTX 2N6764 2N6164 2N6901 2N6763 25C31
Contextual Info: Standard Power MOSFETs, File Number 2N6763, 2N6764 1590 N-Channel Enhancement-Mode Power MOS Field-Ef fect Transistors 31A and 38A, 60V-100V rDs on = 0.08 O and 0.055 Q N-CHANNEL ENHANCEMENT MODE Feature«: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds

switching circuit

Contextual Info:



    
  The 2N6764 is Designed for General Purpose Amplifier and Switching Circuit Applications. MAXIMUM RATINGS 


    
  
  
 
    
     

NX DIODE SM

Abstract: 2N6164 2N6764 q2N6764 MOSF6
Contextual Info: 38 75081 01 G E S O L I D S T A TE 0 1E B e | 3fi7SDfil DDlflMDD 3 | - 18400 _ D 3 Standard Power MOSFETs 2N6764 File Number 1590 Power M O S Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors N -C H A N N E L E N H A N C E M E N T M O D E

Contextual Info: m 2N6764 \ \ N-CHANNEL POWER MOSFET DESCRIPTION: The 2N6764 is Designed for General Purpose Amplifier and Switching Circuit Applications. MAXIMUM RATINGS Id 38 A @ Tc = 25 °C 24 A @ T C= 100 °C V ds 100 V PACKAGE STYLE TO -204A E 1.550 - 39.37 — MAX

Contextual Info: 37E SEMELAB LTD D Ö1331Ö7 dec* «1Q 87 SEMELAB \b 2N 6763 2N6764 /,tao MOS POWER MECHANICAL DATA N-Channel Enhancement Mode Dimensions in mm I*-1.6 1 i 39.5 APPLICATIONS 20.3 • SWITCHING REGULATORS • CONVERTERS • MOTOR DRIVERS 9.0 12.0 PIN 1-G a te

Contextual Info: 2N6764T1, 2N6766T1, 2N6768T1 and 2N6770T1 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/543 DESCRIPTION This family of 2N6764T1, 2N6766T1, 2N6768T1 and 2N6770T1 switching transistors are

Contextual Info: 2N6764+JANTXV Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)38 I(DM) Max. (A) Pulsed I(D)24 @Temp (øC)100# IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55õ

DD 127 D transistor

Abstract: T4-LDS-0101-1
Contextual Info: 2N6764T1, 2N6766T1, 2N6768T1 and 2N6770T1 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/543 DESCRIPTION This family of 2N6764T1, 2N6766T1, 2N6768T1 and 2N6770T1 switching transistors are

2N6764 JANTX

Abstract: 30AQ 2N6764 2N6766 2N6768 2N6770 JANTX2N6764 JANTX2N6766 JANTX2N6768 JANTX2N6770
Contextual Info: 2N6764, 2N6764, 2N6764 2N6766, JANTX2N6766, JANTXV2N6766 2N6768, JANTX2N6768, JANTXV2N6768 2N6770, JANTX2N6770, JANTXV2N6770 JANTX, JANTXV POWER MOSFET IN TO-204 PACKAGE, QUALIFIED TO MIL-PRF-19500/543 100V Thru 500V, Up to 38A, N-Channel, Enhancement Mode MOSFET Power Transistor

1N6801

Abstract: 2N6767 2n6800 2N6755 2N6756 2N6757 2N6758 2N6759 2N676 2N6761
Contextual Info: - 248 - f ft * t Vds or M € tt € i Vdg V 2N6755 IR N 60 2N6756 N 100 IR 2N6757 IR N 150 2N6758 N 200 IR 2N6759 IR N 350 2N6Ï6Û N 400 IR 2N6761 N 450 IR 2N6762 N 500 IR 2K6763 IR N 60 2N6764 IR N 100 2N6765 IR N 150 2N6766 IR N 200 2N6767 IR N 350 2N6768

Contextual Info: • M3D E27 1 0 0 5 3 73 0 7fl4 ■ HAS _ 2N6763 2N6764 H a r r is N-Channel Enhancem ent-Mode Power MOS Field-Effect Transistors A u g u st 1991 Features Package TO -20 4 A E BOTTOM VIEW • 31A and 38A, 60V - 100V • rDS on = 0 .0 8 ÎÎ and 0 .0 5 5 ÎÎ

TO-204AE

Contextual Info: NATL N-Channel Power MOSFETs N-Channel Power MOSFETs Continued IRFP441 IRF442 IRF840 IRF841 IRF842 IRF843 2N6764 IRFP1S0 IRFP151 IRF152 2N6765 2N6766 IRF250 IRFP250 IRF251 - 150 E4 4 60 1600 350 150 E4 1.1 4 60 1600 350 150 E4 0.25 0.85 4 60 1600

2N5764

Abstract: 2N6764 25C31 2N6164 2N6763
Contextual Info: Standard Power MOSFETs, File Number 2N6763, 2N6764 1590 N-Channel Enhancement-Mode Power MOS Field-Ef fect Transistors 31A and 38A, 60V-100V rDs on = 0.08 O and 0.055 Q N-CHANNEL ENHANCEMENT MODE Feature«: • SOA is power-dissipation lim ited ■ Nanosecond sw itching speeds

Contextual Info: 2N6764, 2N6766, 2N6768 and 2N6770 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/543 DESCRIPTION This family of 2N6764, 2N6766, 2N6768 and 2N6770 switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also

irf630 irf640

Abstract: vd 5205 IRFZ34 E2960 2N6796 IR E2959 e2958 E2961 H13C IRF9530 international
Contextual Info: International S Rectifier Government/ Space Products HEXFET, ESA/SCC - Qualified - Europe N-Channel Types Basic Type Vd s V 2N6764 2N6766 2N6768 RDS(on) (Ohms) ESA/SCC Specification Variant Test Level issue No. Issue Date 100 200 400 0.055 0.085 0.30 5205/013

Contextual Info: 2N6764+JAN Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)38 I(DM) Max. (A) Pulsed I(D)24 @Temp (øC)100# IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55õ

Contextual Info: 2N6764+JANTX Transistors N-Channel Enhancement MOSFET Military/High-RelY V BR DSS (V)100 V(BR)GSS (V)20 I(D) Max. (A)38 I(DM) Max. (A) Pulsed I(D)24 @Temp (øC)100# IDM Max (@25øC Amb) @Pulse Width (s) (Condition) Absolute Max. Power Diss. (W)150 Minimum Operating Temp (øC)-55õ

DD 127 D TRANSISTOR

Abstract: 2N6764 JANTX transistor DD 127 D 2N6764 2n6766 2N6770 T4-LDS-0101 2n6768 2N6770 JANTX clare dss3
Contextual Info: 2N6764, 2N6766, 2N6768 and 2N6770 Qualified Levels: JAN, JANTX, and JANTXV N-CHANNEL MOSFET Available on commercial versions Qualified per MIL-PRF-19500/543 DESCRIPTION This family of 2N6764, 2N6766, 2N6768 and 2N6770 switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also

1N7001

Abstract: 2N6155 4900 SIEMENS 1N7000 BUZ54 2N6759 2n6800 2N6823 BUZ211 IXTP4N90
Contextual Info: - 248 - f M € tt € ft * V 2N6755 2N6756 2N6757 2N6758 2N6759 2N6Ï6Û 2N6761 2N6762 2K6763 2N6764 2N6765 2N6766 2N6767 2N6768 2N6769 2N6770 2N6782 2N6784 2Ü6736 2N6788 2N679Û 2N6792 2N6794 2N6796 2K6798 2N6800 2N6802 2N6804 2N6806 2N6845 IR IR IR IR

2N7003

Abstract: 2N7009 2N7011 2N7073 G50-12C1 2N6755 2N6756 2N6757 2N6758 2N6759
Contextual Info: - 248 M - € 2N6755 2N6756 2N6757 2N6758 2N6759 2N6Ï6Û 2N6761 2N6762 2K6763 2N6764 2N6765 2N6766 2N6767 2N6768 2N6769 2N6770 2N6782 2N6784 2Ü6736 2N6788 2N679Û 2N6792 2N6794 2N6796 2K6798 2N6800 2N6802 2N6804 2N6806 2N6845 f- +• */!/ * tt € f f t * £ ÍS T a = 2 5 '0

Contextual Info: L- Conductor na. TELEPHONE: 201 376-2922 (212)227-6005 FAX: (201) 376-8960 20 STERU AVE. SPRINGFIELD, NEW JERSEY 07081 U.S.A. 2N6764 N-Channel Enhancement-Mode Power MOS Field-Effect Transistors Absolute Maximum Ratings (Tc - +25°C) Unless Otherwise Specified

2N6763

Contextual Info: 2 H a r r 2N6763 2N6764 i s N-Channel Enhancement-Mode Power MOS Field-Effect Transistors August 1991 Features Package T 0 -2 0 4 A E BOTTOM VIEW • 31A and 38A, 60V - 100V • rDS(on = 0 .08H and 0 .055H DRAIN SOURCE • SOA is Power-Dissipation Limited

TO-254

Abstract: T0-204 IRF450 equivalent
Contextual Info: CT'Sificonix .X J P in c o r p o r a te d Industry Standard Military MOSFETs Package Equivalent Commercial Part Number 0.18 75 T0-204 IRF130 542 9.0 0.40 75 T0-204 IRF230 542 400 5.5 1.0 75 TO-204 IRF330 542 500 4.5 1.5 75 TO-204 IRF430 542 Part Number V BRJDSS