IRF330 Search Results

TO-254

Abstract: T0-204 IRF450 equivalent
Contextual Info: CT'Sificonix .X J P in c o r p o r a te d Industry Standard Military MOSFETs Package Equivalent Commercial Part Number 0.18 75 T0-204 IRF130 542 9.0 0.40 75 T0-204 IRF230 542 400 5.5 1.0 75 TO-204 IRF330 542 500 4.5 1.5 75 TO-204 IRF430 542 Part Number V BRJDSS

CMD8

Contextual Info: IRF232 IRF233 IRF630 By IRF631 Its IRF632 IRF633 2N6759 IRF330 IRF331 IRF333 IRF730 IRF731 Nola1: Non-JEDEC registered valua. lD@ = 25°C Tc 'ro = 100°C VGS th Id e(mA) (V) Min Max R[)S(oo) • d (ft) e (A) (nC) Max Ch. <PF) Con <PF) CtM Proc. Max (PF)

IRF330

Abstract: TA17414 TB334 204AA
Contextual Info: IRF330 Data Sheet March 1999 5.5A, 400V, 1.000 Ohm, N-Channel Power MOSFET 1570.4 Features • 5.5A, 400V This N-Channel enhancement mode silicon gate power field effect transistor is an advanced power MOSFET designed, tested, and guaranteed to withstand a specified level of

IRF331

Abstract: IRF332 IRF3301 IRF333 IRF330
Contextual Info: -Standard Power MOSFETs IRF330, IRF331, IRF332, IRF333 F ile N u m b e r 1570 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode Power Field-Effect Transistors

IRF331R

Abstract: IRF330R ic l00a 250M IRF332R IRF333R
Contextual Info: _ Rugged Power MOSFETs File Number 2011 IRF330R, IRF331R, IRF332R, IRF333R Avalanche Energy Rated N-Channel Power MOSFETs 4.5A a nd 5.5A, 350V-400V ros on = 1 .0 0 and 1 .5 0 N-CHANNEL ENHANCEMENT MODE Features: • Single pulse avalanche energy rated

WO2M

Abstract: IRF330 IRF331 LM 7801 IRF332 IRF333
Contextual Info: □1 J3875081 G E SOLID STATE ¿ Ë 1 3 Û 7 S G 0 1 □□löBGM 7 W 0 1E 18304 Di T " ' 3 £H I - Standard Power MOSFETs IRF330, IRF331, IRF332, IRF333 File Number 1570 Power MOS Field-Effect Transistors N-Channel Enhancement-Mode

IRF330

Abstract: IRF331 IRF332 IRF333 331z
Contextual Info: 7 9 6 4 1 4 2 S ^M S U N G S E M I C O N D U C T O R I DEI TTbMms DDDSim 9 8 D 0 5114 7 “ D T ^ 3 7 ~ // N-CHANNEL POWER MOSFETS IRF330/331/332/333 FEATURES • Low RDS on • Improved inductive ruggedness • • • • • • Fast switching times Rugged polysilicon gate ceil structure

mosfet to3

Abstract: irf33 2N6760 IRF330 LE17
Contextual Info: N-CHANNEL POWER MOSFET IRF330 / 2N6760 • Power MOSFET Transistor In A Hermetic Metal TO-3 Package • High Input Impedance / RDS on < 1.0Ω • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available

irf332

Abstract: irf330 harris
Contextual Info: IRF330, IRF331, IRF332, IRF333 S E M I C O N D U C T O R 4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs January 1998 Features Description • 4.5A and 5.5A, 350V and 400V These are N-Channel enhancement mode silicon gate power field effect transistors. They are advanced power

lem 732 733

Abstract: lem 731 IRF3303 lem 733 1rf730 IRF330-333 5N40 MTP5N35 733 331 lem* 731
Contextual Info: FAIRCHILD SEMICONDUCTOR A4 DE I 34b‘ïb74 0 0 5 7 0 ^ □ IRF330-333/IRF730-733 M TM /M TP5N35/5N40 N-Channel Power M O SF ET s, 5.5 A, 350 V/400 V FAIRCHILD A Schlumberger Company Power And Discrete Division — Description TO-204AA TO-220AB IRF330 IRF331

Contextual Info: N-CHANNEL POWER MOSFET IRF330 / 2N6760 • Power MOSFET Transistor In A Hermetic Metal TO-3 Package • High Input Impedance / RDS on < 1.01 • Designed For Switching, Power Supply, Motor Control and Amplifier Applications • Screening Options Available

Contextual Info: IRF330, IRF331y IRF332, IRF333 I ia ttr is sem conduc or 4.5A and 5.5A, 350V and 400V, 1.0 and 1.5 Ohm, N-Channel Power MOSFETs July 1998 Features Description • 4.5A and 5.5A, 350V and 400V • High Input Impedance These are N-Channel enhancement mode silicon gate

IRF331

Abstract: field effect transistor IRF 900 volts irf330 transistor d 331 data Irf333
Contextual Info: MOTOROLA SEMICONDUCTOR TECHNICAL DATA IRF330 IRF331 IRF333 Pow er Field Effect Transistor N-Channel Enhancem ent-M ode S ilic o n G ate T M O S These TM O S Power FETs are designed for high voltage, high speed power switching applications such as switching regulators, converters, solenoid

IRF330

Abstract: JANTX2N6760 JANTXV2N6760
Contextual Info: PD - 90335F IRF330 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6760  HEXFET TRANSISTORS JANTXV2N6760 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/542] 400V, N-CHANNEL Product Summary Part Number IRF330 BVDSS 400V RDS(on) 1.00Ω ID 5.5A The HEXFETtechnology is the key to International

IRF 930

Abstract: IRF3305
Contextual Info: PD - 95879 AUTOMOTIVE MOSFET IRF3305 Features O O O O O Designed to support Linear Gate Drive Applications 175°C Operating Temperature Low Thermal Resistance Junction - Case Rugged Process Technology and Design Fully Avalanche Rated Description HEXFET Power MOSFET

Contextual Info: PD - 95758A IRF3305PbF Features l Designed to support Linear Gate Drive Applications l 175°C Operating Temperature l Low Thermal Resistance Junction - Case l Rugged Process Technology and Design l Fully Avalanche Rated l Lead-Free HEXFET Power MOSFET D

IRF3305

Contextual Info: PD - 95879 AUTOMOTIVE MOSFET IRF3305 Features O O O O O Designed to support Linear Gate Drive Applications 175°C Operating Temperature Low Thermal Resistance Junction - Case Rugged Process Technology and Design Fully Avalanche Rated Description HEXFET Power MOSFET

Contextual Info: Type No. IRF232 IRF630 IRF631 IRF632 IRF633 9-16 2N6759 2N6760 IRF330 IRF331 IRF333 IRF730 IRF731 TO-204AA 42 T 02 04A A (42) TO-220 (37) TO-220 (37) TO-220 (37) T0-220 (37) TO-220 (37) 70220 (37) T0204AA (42) TO-204AA (42) T 02 04A A (42) T0-204AA (42)

IRF3305

Abstract: irf3305pbf
Contextual Info: PD - 95758 AUTOMOTIVE MOSFET IRF3305PbF Features O O O O O O Designed to support Linear Gate Drive Applications 175°C Operating Temperature Low Thermal Resistance Junction - Case Rugged Process Technology and Design Fully Avalanche Rated Lead-Free HEXFET Power MOSFET

irf332

Abstract: IRF331 IRF3302
Contextual Info: H E D I 4ÖS5M52 G0Cm3t. Q | Data Sheet No. PD-9.302H INTERNATIONAL RECTIFIER INTERNATIONAL RECTIFIER I« R T-39-11 REPETITIVE AVALANCHE AND dv/dt RATED* HEXFET TRANSISTORS IRF330 IRF331 IRF332 IRF333 Product Summary 400 Volt, 1.0 Ohm HEXFET TO-204AlA TO-3 Hermetic Package

Contextual Info: • 43CI2271 0053=130 HARRIS A3? ■ HAS IR F330/331/332/333 IRF330R/331R/332R/333R N -Channel Power MOSFETs Avalanche Energy Rated* August 1991 Package Features T 0 -2 0 4 A A BOTTOM VIEW • 4.5A and 5.5A, 350V - 400V • rDS on = 1-o fl and 1-5i^ • Single Pulse Avalanche Energy Rated*

ED 83

Contextual Info: Government/ Space Products International [^Rectifier HEXFET, CECC Qualified — Europe N-Channel Types Basic Type IRF044 IRF120 IRF130 IRF140 IRF150 IRF220 IRF230 IRF240 IRF250 IRF244 IRF320 IRF330 IRF340 IRF350 IRF420 IRF430 IRF440 IRF450 VDS V RDS(on)

Contextual Info: PD - 90335F IRF330 REPETITIVE AVALANCHE AND dv/dt RATED JANTX2N6760  HEXFET TRANSISTORS JANTXV2N6760 THRU-HOLE TO-204AA/AE [REF:MIL-PRF-19500/542] 400V, N-CHANNEL Product Summary Part Number IRF330 BVDSS 400V RDS(on) 1.00Ω ID 5.5A The HEXFETtechnology is the key to International

Contextual Info: PD - 95879 AUTOMOTIVE MOSFET IRF3305 Features n n n n n HEXFET Power MOSFET Designed to support Linear Gate Drive Applications 175°C Operating Temperature Low Thermal Resistance Junction - Case Rugged Process Technology and Design Fully Avalanche Rated